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    Chemically amplified resist compositions and process for the formation of resist patterns
    2.
    发明授权
    Chemically amplified resist compositions and process for the formation of resist patterns 失效
    化学扩增抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号：US06013416A

    公开(公告)日：2000-01-11

    申请号：US673739

    申请日：1996-06-27

    申请人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Satoshi Takechi ,  Akiko Kotachi ,  Makoto Takahashi

    发明人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Satoshi Takechi ,  Akiko Kotachi ,  Makoto Takahashi

    IPC分类号： G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/039 ,  G03F7/0045

    摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble, film-forming compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing a protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition is particularly suitable for excimer laser lithography using an alkaline developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.

    摘要翻译： 碱可显影的化学放大抗蚀剂组合物，其包含具有包含受保护的碱溶性基团的结构单元的碱不溶性成膜化合物，其中所述受保护的碱溶性基团的保护部分在酸的作用下被切割 由与所述化合物组合使用的光致酸产生剂产生，从而从碱溶性基团释放保护部分并将所述化合物转化为碱溶性化合物，以及能够在曝光于图案化辐射时分解的光致酸产生剂 产生能够导致所述保护部分裂解的酸。 抗蚀剂组合物特别适合于使用碱性显影剂的准分子激光光刻，并且所形成的抗蚀剂图案可以表现出高灵敏度和优异的耐干蚀刻性而不膨胀。

    Chemically amplified resist compositions and process for the formation of resist patterns
    3.
    发明授权
    Chemically amplified resist compositions and process for the formation of resist patterns 失效
    化学扩增抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号：US06200725B1

    公开(公告)日：2001-03-13

    申请号：US08969368

    申请日：1997-11-28

    申请人： Satoshi Takechi ,  Akiko Kotachi ,  Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Makino ,  Makoto Takahashi

    发明人： Satoshi Takechi ,  Akiko Kotachi ,  Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Makino ,  Makoto Takahashi

    IPC分类号： G03F7039

    CPC分类号： G03F7/039 ,  G03F7/0045

    摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group contains an alicyclic hydrocarbon group having bonded to a carbon atom thereof a —CH2—R1′ group wherein R1′ is methyl, ethyl, propyl or isopropyl, and said alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing said protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition can exhibit a high sensitivity (not more than 5 mJ/cm2) and therefore is particularly suitable for ArF lithography and also can exhibit stable patterning properties.

    摘要翻译： 碱可显影的化学增幅抗蚀剂组合物，其包含具有包含受保护的碱溶性基团的结构单元的碱不溶性化合物，其中所述被保护的碱溶性基团的保护部分含有与碳原子键合的脂环族烃基 其中R 1'是甲基，乙基，丙基或异丙​​基，并且所述碱溶性基团在与所述化合物组合使用的光致酸产生剂产生的酸作用下被切割，由此释放所述保护部分 从碱溶性基团中转化为碱溶性化合物，以及光致酸发生剂，其能够在暴露于图案化辐射时分解，从而产生能够导致所述保护部分裂解的酸。 抗蚀剂组合物可以表现出高灵敏度（不大于5mJ / cm 2），因此特别适用于ArF光刻，并且还可呈现稳定的图案化性能。

    Resist material for energy beam lithography and method of using the same
    5.
    发明授权
    Resist material for energy beam lithography and method of using the same 失效
    能量束光刻用材料及其使用方法

    公开(公告)号：US5104479A

    公开(公告)日：1992-04-14

    申请号：US605351

    申请日：1990-10-30

    申请人： Akiko Kotachi ,  Satoshi Takechi ,  Yuko Nakamura

    发明人： Akiko Kotachi ,  Satoshi Takechi ,  Yuko Nakamura

    IPC分类号： G03F7/039 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30

    CPC分类号： G03F7/0758

    摘要： A positive-type resist material for forming resist patterns having submicron geometries on a substrate, the resist material comprising a copolymer of a first monomer of silicon containing methacrylic ester and a second monomer of either acrylic ester or acrylonitrile, the alpha-position of the second monomer being substituted by an electron attracting group. The first monomer has a high resistance to an oxygen plasma and the second monomer has a high sensitivity to e-beam/X-ray irradiation. As the electron attracting group, a trifluoromethyl group, a halogen group, a cyano group and a CH.sub.2 CO.sub.2 R group are used. The embodied first monomers are trimethylsilylmethyl methacrylate and (diphenylmethylsilyl)methyl methacrylate, and the embodied second monomers are .alpha.-trifluoromethyl (2,2,2-trifluoroethyl) acrylate and .alpha.-chloroacrylonitrile.

    Process for forming resist pattern
    8.
    发明授权
    Process for forming resist pattern 失效
    用于形成抗蚀剂图案的工艺

    公开(公告)号：US5326670A

    公开(公告)日：1994-07-05

    申请号：US711779

    申请日：1991-06-07

    申请人： Akiko Kotachi ,  Satoshi Takechi

    发明人： Akiko Kotachi ,  Satoshi Takechi

    IPC分类号： G03F7/008 ,  G03F7/012 ,  G03F7/075 ,  G03F7/16 ,  G03F7/30

    CPC分类号： G03F7/0758 ,  G03F7/0125 ,  G03F7/168 ,  Y10S430/143

    摘要： A resist composition for forming a upper resist layer and a process for forming a pattern thereby are disclosed. This resist comprises an azide compound and a polyacrylic copolymer of the following formula (1): ##STR1## wherein, R.sub.1 means CH.sub.3, CF.sub.3, CN, CH.sub.2 OH, or CH.sub.2 CO.sub.2 R, wherein R means an alkyl having 1 to 5 carbon atomsR.sub.2 means a hydrocarbon radical having at least one Si,R.sub.3 means OH, O--C(CH.sub.3).sub.3, NH.sub.2 , or NHCH.sub.2 OH, and, a ratio of n to m is more than 0 and is 1 or less than 1.Whereby a finely-resolved resist pattern is obtained by a preset process for forming the resist pattern.

    摘要翻译： 公开了用于形成上抗蚀剂层的抗蚀剂组合物和由此形成图案的工艺。 该抗蚀剂包含叠氮化合物和下式（1）的聚丙烯酸共聚物：其中R 1表示CH 3，CF 3，CN，CH 2 OH或CH 2 CO 2 R，其中R表示具有1至5个碳原子的烷基 R 2表示具有至少一个Si的烃基，R 3表示OH，OC（CH 3）3，NH 2或NHCH 2 OH，n与m的比例大于0且为1或小于1。 通过用于形成抗蚀剂图案的预设处理获得分辨的抗蚀剂图案。

    Process for formation of resist patterns
    9.
    发明授权
    Process for formation of resist patterns 失效
    形成抗蚀剂图案的工艺

    公开(公告)号：US5403699A

    公开(公告)日：1995-04-04

    申请号：US100343

    申请日：1993-08-02

    申请人： Satoshi Takechi ,  Yuko Nakamura ,  Akiko Kotachi

    发明人： Satoshi Takechi ,  Yuko Nakamura ,  Akiko Kotachi

    IPC分类号： G03F7/039 ,  G03F7/32

    CPC分类号： G03F7/039 ,  G03F7/325 ,  Y10S430/143

    摘要： A pattern formation process using a positive-working resist material of the formula (I): ##STR1## in which R.sup.1 and R.sup.2 may be the same or different, and each represents a substituted or unsubstituted lower alkyl group, X represents a halogen atom, and m and n each is larger than 0 and smaller than 100; and carrying out the development of the selectively exposed resist material with xylene for 10 to 20 minutes, or with other solvent(s). This process effectively obtains fine resist patterns having an increased sensitivity and excellent resolution without a reduction of the layer thickness in an unexposed area of the resist and resist residues in an exposed area of the same.

    摘要翻译： 使用式（I）的正性抗蚀剂材料的图案形成方法：其中R 1和R 2可以相同或不同，并且各自表示取代或未取代的低级烷基，X表示 卤素原子，m和n分别大于0且小于100; 并用二甲苯进行10至20分钟的选择性曝光的抗蚀剂材料的显影，或与其它溶剂一起进行。 该方法有效地获得具有增加的灵敏度和优异的分辨率的精细抗蚀剂图案，而不会降低抗蚀剂的未曝光区域中的层厚度，并且抗蚀剂图案在其曝光区域中抵抗残留物。