摘要:
An object of the present invention is to provide an electron beam apparatus, in which a plurality of electron beams, e.g., four electron beams, is produced for one optical axis with a relatively high current achieved for each electron beam.Provided is an electron beam apparatus comprising: an electron beam emitter (32) having an electron gun (30), said electron gun (30) disposed along an optical axis (23) and operable to emit a plurality of off-axis electron beams along a direction defined by a certain angle with respect to the optical axis (23); a plurality of apertures (34) disposed at a location offset from the optical axis (23); and an electromagnetic lens (7) for forming a magnetic field between the electron gun (30) and the apertures (34) to control the plurality of off-axis electron beams emitted from the electron gun (30) so that the plurality of off-axis electron beams passes through the apertures (34).
摘要:
An object of the present invention is to provide an electron beam apparatus, in which a plurality of electron beams, e.g., four electron beams, is produced for one optical axis with a relatively high current achieved for each electron beam.Provided is an electron beam apparatus comprising: an electron beam emitter (32) having an electron gun (30), said electron gun (30) disposed along an optical axis (23) and operable to emit a plurality of off-axis electron beams along a direction defined by a certain angle with respect to the optical axis (23); a plurality of apertures (34) disposed at a location offset from the optical axis (23); and an electromagnetic lens (7) for forming a magnetic field between the electron gun (30) and the apertures (34) to control the plurality of off-axis electron beams emitted from the electron gun (30) so that the plurality of off-axis electron beams passes through the apertures (34).
摘要:
An object of the present invention is to provide an electron beam apparatus, in which a plurality of electron beams, e.g., four electron beams, is produced for one optical axis with a relatively high current achieved for each electron beam. Provided is an electron beam apparatus comprising: an electron beam emitter (32) having an electron gun (30), said electron gun (30) disposed along an optical axis (23) and operable to emit a plurality of off-axis electron beams along a direction defined by a certain angle with respect to the optical axis (23); a plurality of apertures (34) disposed at a location offset from the optical axis (23); and an electromagnetic lens (7) for forming a magnetic field between the electron gun (30) and the apertures (34) to control the plurality of off-axis electron beams emitted from the electron gun (30) so that the plurality of off-axis electron beams passes through the apertures (34).
摘要:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.
摘要:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.
摘要:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.
摘要:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.
摘要:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.
摘要:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25••1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.
摘要:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.