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公开(公告)号：US06809328B2
公开(公告)日：2004-10-26
申请号：US10326574
申请日：2002-12-20
IPC分类号： H05H104
CPC分类号： H05G2/003
摘要： Erosion-resistive coatings are provided on critical plasma-facing surfaces of an electrical gas plasma head for an EUV source. The erosion-resistive coatings comprise diamond and diamond-like materials deposited onto the critical plasma-facing surfaces. A pure diamond coating is deposited onto the plasma exposed insulator surfaces using, for example, a chemical vapor deposition processes. The diamond coating is made conductive by selective doping with p-type material, such as, but not limited to, boron and graphite.
摘要翻译： 在用于EUV电源的电气等离子体头的关键等离子体表面上提供耐腐蚀涂层。 耐腐蚀涂层包括沉积在关键的等离子体表面上的金刚石和类金刚石材料。 使用例如化学气相沉积工艺将纯金刚石涂层沉积到等离子体暴露的绝缘体表面上。 金刚石涂层通过选择性掺杂p型材料（例如但不限于硼和石墨）而导电。
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公开(公告)号：US07041993B2
公开(公告)日：2006-05-09
申请号：US10921407
申请日：2004-08-18
CPC分类号： H05G2/003
摘要： Erosion-resistive coatings are provided on critical plasma-facing surfaces of an electrical gas plasma head for an EUV source. The erosion-resistive coatings comprise diamond and diamond-like materials deposited onto the critical plasma-facing surfaces. A pure diamond coating is deposited onto the plasma exposed insulator surfaces using, for example, a chemical vapor deposition processes. The diamond coating is made conductive by selective doping with p-type material, such as, but not limited to, boron and graphite.
摘要翻译： 在用于EUV电源的电气等离子体头的关键等离子体表面上提供耐腐蚀涂层。 耐腐蚀涂层包括沉积在关键的等离子体表面上的金刚石和类金刚石材料。 使用例如化学气相沉积工艺将纯金刚石涂层沉积到等离子体暴露的绝缘体表面上。 金刚石涂层通过选择性掺杂p型材料（例如但不限于硼和石墨）而导电。
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公开(公告)号：US20050019492A1
公开(公告)日：2005-01-27
申请号：US10921407
申请日：2004-08-18
CPC分类号： H05G2/003
摘要： Erosion-resistive coatings are provided on critical plasma-facing surfaces of an electrical gas plasma head for an EUV source. The erosion-resistive coatings comprise diamond and diamond-like materials deposited onto the critical plasma-facing surfaces. A pure diamond coating is deposited onto the plasma exposed insulator surfaces using, for example, a chemical vapor deposition processes. The diamond coating is made conductive by selective doping with p-type material, such as, but not limited to, boron and graphite.
摘要翻译： 在用于EUV电源的电气等离子体头的关键等离子体表面上提供耐腐蚀涂层。 耐腐蚀涂层包括沉积在关键的等离子体表面上的金刚石和类金刚石材料。 使用例如化学气相沉积工艺将纯金刚石涂层沉积到等离子体暴露的绝缘体表面上。 金刚石涂层通过选择性掺杂p型材料（例如但不限于硼和石墨）而导电。
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公开(公告)号：US20060093972A1
公开(公告)日：2006-05-04
申请号：US11293594
申请日：2005-12-02
申请人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan Rice
发明人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan Rice
IPC分类号： G03F7/00
摘要： In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.
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公开(公告)号：US07033739B2
公开(公告)日：2006-04-25
申请号：US10423466
申请日：2003-04-24
IPC分类号： G03F7/20
摘要： In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.
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公开(公告)号：US20060000985A1
公开(公告)日：2006-01-05
申请号：US10883048
申请日：2004-06-30
申请人： Manish Chandhok , Bryan Rice , Robert Bristol
发明人： Manish Chandhok , Bryan Rice , Robert Bristol
IPC分类号： G03F7/20
CPC分类号： G03F7/70175 , G03F7/70033 , G21K1/06
摘要： According to an embodiment of the invention, extreme ultraviolet (EUV) photolithography is performed using lobster eye transmission optics. A light source, such as a source plasma, is located at the center of a circle. Several mirror segments are arranged on an arc of the circle. The mirror segments may be arranged so that the light generated by the light source is collimated after being reflected. The light source may be a source plasma capable of generating EUV photons.
摘要翻译： 根据本发明的实施例，使用龙虾眼传输光学器件执行极紫外（EUV）光刻。 诸如源等离子体的光源位于圆的中心。 圆弧上设有几个镜片段。 镜片段可以被布置成使得由光源产生的光在被反射之后被准直。 光源可以是能够产生EUV光子的源等离子体。
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公开(公告)号：US20080220380A1
公开(公告)日：2008-09-11
申请号：US12075703
申请日：2008-03-13
IPC分类号： G03F7/20
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/093 , G03F7/11 , G03F7/168 , G03F7/2002 , G03F7/3007 , G03F7/38
摘要： Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.
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公开(公告)号：US20060175616A1
公开(公告)日：2006-08-10
申请号：US11052966
申请日：2005-02-07
申请人： Manish Chandhok , Ming Fang , Robert Bristol
发明人： Manish Chandhok , Ming Fang , Robert Bristol
CPC分类号： G02B1/14 , G02B1/105 , G02B5/0891 , G03F7/70916 , G03F7/70958
摘要： An optical component for use in, e.g., an extreme ultraviolet (EUV) lithography system, may include a pre-oxidized protective layer. The protective layer may be photocatalytic, and may be substantially amorphous to provide a diffusion barrier. The protective layer may be, e.g., a metal oxide such as titanium dioxide or molybdenum oxide.
摘要翻译： 用于例如极紫外（EUV）光刻系统的光学部件可以包括预氧化保护层。 保护层可以是光催化的，并且可以是基本无定形的以提供扩散阻挡层。 保护层可以是例如金属氧化物如二氧化钛或氧化钼。
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公开(公告)号：US07527920B2
公开(公告)日：2009-05-05
申请号：US11293594
申请日：2005-12-02
IPC分类号： G03F7/20
摘要： In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.
摘要翻译： 在一个实现中，到达光致抗蚀剂的下表面的能量可以被重定向回到光致抗蚀剂材料中。 这可以通过例如将设置在晶片表面上的硬掩模的能量反射和/或发射到光致抗蚀剂中来完成。
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公开(公告)号：US07374867B2
公开(公告)日：2008-05-20
申请号：US10679816
申请日：2003-10-06
IPC分类号： G03F7/26
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/093 , G03F7/11 , G03F7/168 , G03F7/2002 , G03F7/3007 , G03F7/38
摘要： Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.
摘要翻译： 电场可以有利地用于光刻工艺的各个步骤。 例如，在预曝光烘烤之前，已经旋涂在晶片上的光致抗蚀剂可以暴露于电场以取向未曝光的光致抗蚀剂内的聚集体或其它组分。 通过将这些聚集体或其它组分与电场对准，可以减少线边缘粗糙度，例如与193纳米光致抗蚀剂结合。 同样地，在曝光期间，可以通过独特的电极或使用射频线圈施加电场。 此外，可以通过沉积导电电极在光刻工艺中的几乎任何点处施加电场，导电电极随后在显影期间被去除。 最后，可以在显影过程中施加电场以改善线边缘粗糙度。
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