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    Optics for extreme ultraviolet lithography
    2.
    发明申请
    Optics for extreme ultraviolet lithography 失效
    极光紫外光刻光学

    公开(公告)号：US20060000985A1

    公开(公告)日：2006-01-05

    申请号：US10883048

    申请日：2004-06-30

    申请人： Manish Chandhok ,  Bryan Rice ,  Robert Bristol

    发明人： Manish Chandhok ,  Bryan Rice ,  Robert Bristol

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70175 ,  G03F7/70033 ,  G21K1/06

    摘要： According to an embodiment of the invention, extreme ultraviolet (EUV) photolithography is performed using lobster eye transmission optics. A light source, such as a source plasma, is located at the center of a circle. Several mirror segments are arranged on an arc of the circle. The mirror segments may be arranged so that the light generated by the light source is collimated after being reflected. The light source may be a source plasma capable of generating EUV photons.

    摘要翻译： 根据本发明的实施例，使用龙虾眼传输光学器件执行极紫外（EUV）光刻。 诸如源等离子体的光源位于圆的中心。 圆弧上设有几个镜片段。 镜片段可以被布置成使得由光源产生的光在被反射之后被准直。 光源可以是能够产生EUV光子的源等离子体。

    Extreme ultraviolet illumination source
    3.
    发明申请
    Extreme ultraviolet illumination source 失效

    公开(公告)号：US20060017024A1

    公开(公告)日：2006-01-26

    申请号：US10882784

    申请日：2004-06-30

    申请人： Manish Chandhok ,  Eric Panning ,  Bryan Rice

    发明人： Manish Chandhok ,  Eric Panning ,  Bryan Rice

    IPC分类号： G01J3/10

    CPC分类号： G03F7/70916 ,  B82Y10/00 ,  G03F7/70033

    摘要： According to a first embodiment of the invention, a dual cathode electrode for generating EUV light is disclosed. The dual cathode electrode may include a first outer cathode, a second inner cathode, and an anode disposed between the inner and outer cathodes. The dual cathode electrode also includes a plasma disposed in between the cathodes that emits EUV photons when it is excited by an arc between the anode and the cathodes. According to a second embodiment of the invention, several Dense Plasma Focus (DPF) electrodes are placed along a circle. The DPF electrodes, when activated, will emit electron photons from the circle in which they are placed thereby avoiding obscuration used to protect UV mirrors against debris.

    Adjustment of distance between source plasma and mirrors to change partial coherence
    4.
    发明申请
    Adjustment of distance between source plasma and mirrors to change partial coherence 失效
    调整源等离子体和反射镜之间的距离以改变部分相干性

    公开(公告)号：US20060289810A1

    公开(公告)日：2006-12-28

    申请号：US11433412

    申请日：2006-05-12

    申请人： Manish Chandhok ,  Eric Panning ,  Bryan Rice

    发明人： Manish Chandhok ,  Eric Panning ,  Bryan Rice

    IPC分类号： G01J3/10

    CPC分类号： B82Y10/00 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/70583

    摘要： According to an embodiment of the invention, an adjustable EUV light source may be used for photolithography. The EUV light source, such as an electrode, is mounted in an adjustable housing. The housing can be adjusted to change the distance between the light source and focusing mirrors, which in turn changes the partial coherence value of the system. The partial coherence value can be changed to print different types of semiconductor features.

    摘要翻译： 根据本发明的实施例，可调节的EUV光源可用于光刻。 EUV光源，例如电极，安装在可调整的外壳中。 可以调整外壳以改变光源和聚焦镜之间的距离，这又改变了系统的部分相干值。 可以改变部分相干值以打印不同类型的半导体特征。

    Erosion resistance of EUV source electrodes
    7.
    发明申请
    Erosion resistance of EUV source electrodes 有权
    EUV源电极的耐腐蚀性

    公开(公告)号：US20050031502A1

    公开(公告)日：2005-02-10

    申请号：US10638261

    申请日：2003-08-07

    申请人： Robert Bristol ,  Arun Ramamoorthy ,  Bryan Rice

    发明人： Robert Bristol ,  Arun Ramamoorthy ,  Bryan Rice

    IPC分类号： B01J19/08 ,  H05G2/00

    CPC分类号： H05G2/003

    摘要： Erosion of material in an electrode in a plasma-produced extreme ultraviolet (EUV) light source may be reduced by treating the surface of the electrode. Grooves may be provided in the electrode surface to increase re-deposition of electrode material in the grooves. The electrode surface may be coated with a porous material to reduce erosion due to brittle destruction. The electrode surface may be coated with a pseudo-alloy to reduce erosion from surface waves caused by the plasma in molten material on the surface of the electrode.

    摘要翻译： 可以通过处理电极的表面来减少等离子体产生的极紫外（EUV）光源中的电极中的材料的侵蚀。 沟槽可以设置在电极表面中以增加沟槽中的电极材料的再沉积。 电极表面可以用多孔材料涂覆以减少由于脆性破坏引起的侵蚀。 电极表面可以涂覆有假合金，以减少由电极表面上的熔融材料中的等离子体引起的表面波的侵蚀。

    Technique to prevent tin contamination of mirrors and electrodes in an EUV lithography system
    9.
    发明申请
    Technique to prevent tin contamination of mirrors and electrodes in an EUV lithography system 有权
    防止EUV光刻系统中反射镜和电极的锡污染的技术

    公开(公告)号：US20050244572A1

    公开(公告)日：2005-11-03

    申请号：US10835867

    申请日：2004-04-29

    申请人： Robert Bristol ,  Bryan Rice ,  Ming Fang ,  John Barnak ,  Melissa Shell

    发明人： Robert Bristol ,  Bryan Rice ,  Ming Fang ,  John Barnak ,  Melissa Shell

    IPC分类号： B32B15/04 ,  C23C14/08 ,  C23C14/16 ,  G03F7/20 ,  G21K1/06 ,  H05H1/00

    CPC分类号： G03F7/70958 ,  C23C14/083 ,  C23C14/165 ,  G03F7/70175 ,  G03F7/70916 ,  G21K1/06 ,  G21K2201/067

    摘要： Passivation coatings and gettering agents may be used in an Extreme Ultraviolet (EUV) source which uses tin (Sn) vapor as a plasma “fuel” to prevent contamination and corresponding loss of reflectivity due to tin contamination. The passivation coating may be a material to which tin does not adhere, and may be placed on reflective surfaces in the source chamber. The gettering agent may be a material that reacts strongly with tin, and may be placed outside of the collector mirrors and/or on non-reflective surfaces. A passivation coating may also be provided on the insulator between the anode and cathode of the source electrodes to prevent shorting due to tin coating the insulator surface.

    摘要翻译： 钝化涂层和吸气剂可以用于使用锡（Sn）蒸气作为等离子体“燃料”的极紫外（EUV）源，以防止污染和相应的锡污染引起的反射率的损失。 钝化涂层可以是锡不粘附的材料，并且可以放置在源室中的反射表面上。 吸气剂可以是与锡强烈反应的材料，并且可以放置在集电镜和/或非反射表面之外。 也可以在源电极的阳极和阴极之间的绝缘体上提供钝化涂层，以防止由于涂覆绝缘体表面的锡而导致短路。