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公开(公告)号：US20060101636A1
公开(公告)日：2006-05-18
申请号：US10993499
申请日：2004-11-18
CPC分类号： G11B5/3903 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for constructing a magnetoresistive sensor using an etch mask that is resistant to the material removal process used to define the sensor width and stripe height. The method may include the use of a Ta etch mask formed under a photoresist mask, and the use of an ion milling process to define the sensor. The etch mask remains substantially intact after performing the ion milling and therefore is readily removed by a later CMP process. The etch mask layer is also very resistant to high temperatures such as those used in a desired atomic layer deposition of alumina, which is used to deposit conformal layers of alumina around the sensor.
摘要翻译： 一种用于构造使用耐蚀刻材料去除工艺的蚀刻掩模的磁阻传感器的方法，所述方法用于限定传感器宽度和条纹高度。 该方法可以包括使用形成在光致抗蚀剂掩模下的Ta蚀刻掩模，以及使用离子铣削工艺来限定传感器。 在执行离子研磨之后，蚀刻掩模基本上保持完整，因此通过稍后的CMP工艺容易地除去。 蚀刻掩模层也非常耐高温，例如用于期望的氧化铝原子层沉积中使用的那些，其用于在传感器周围沉积保形层的氧化铝。
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公开(公告)号：US20060256482A1
公开(公告)日：2006-11-16
申请号：US11126508
申请日：2005-05-10
申请人： Satoru Araki , Robert Beach , Marie-Claire Cyrille , Wipul Jayasekara , Quang Le , Jui-Lung Li , David Seagle , Howard Zolla
发明人： Satoru Araki , Robert Beach , Marie-Claire Cyrille , Wipul Jayasekara , Quang Le , Jui-Lung Li , David Seagle , Howard Zolla
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , G11B5/112 , G11B5/3169 , G11B5/3906 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046
摘要： A method for fabricating magnetic side shields for an MR sensor of a magnetic head. Following the deposition of MR sensor layers, a first DLC layer is deposited. Milling mask layers are then deposited, and outer portions of the milling mask layers are removed such that a remaining central portion of the milling mask layers is formed having straight sidewalls and no undercuts. Outer portions of the sensor layers are then removed such that a relatively thick remaining central portion of the milling mask resides above the remaining sensor layers. A thin electrical insulation layer is deposited, followed by the deposition of magnetic side shields. A second DLC layer is deposited and the remaining mask layers are then removed utilizing a chemical mechanical polishing (CMP) liftoff step. Thereafter, the first DLC layer and the second DLC layer are removed and a second magnetic shield layer is then fabricated thereabove.
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3.发明申请Method of fabricating electronic component using resist structure with no undercut 有权使用没有底切的抗蚀剂结构制造电子部件的方法公开(公告)号：US20050045580A1
公开(公告)日：2005-03-03
申请号：US10652053
申请日：2003-08-29
申请人： Amanda Baer , Marie-Claire Cyrille , Frederick Dill , Wipul Jayasekara , Jui-Lung Li , Hugo Santini , Benjamin Wang
发明人： Amanda Baer , Marie-Claire Cyrille , Frederick Dill , Wipul Jayasekara , Jui-Lung Li , Hugo Santini , Benjamin Wang
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , H01J2237/3114
摘要： A method for milling a structure. A single- or multi-layer resist having no undercut is added to a surface of a structure to be milled, the surface to be milled defining a plane. A milling process, such as ion milling, is performed. The milling process includes milling the structure at high incidence and milling the structure at razing incidence. The milling process can be performed only once, or repeated multiple times. High incidence can be defined as about 65 to about 90 degrees from the plane of the surface being milled. Razing incidence can be defined as about 0 to about 30 degrees from the plane of the surface being milled.
摘要翻译： 一种铣削结构的方法。 将未切割的单层或多层抗蚀剂加入要研磨的结构的表面，待研磨的表面限定一个平面。 进行铣削加工，例如离子铣削。 铣削过程包括以高发射率铣削结构并铣削结构。 铣削加工只能执行一次，或重复多次。 可以将高入射率定义为从被研磨表面的平面约65度至约90度。 闪电发生率可以定义为距被研磨表面的平面约0至约30度。
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4.发明申请Dual angle milling for current perpendicular to plane (CPP) magnetoresistive sensor definition 失效用于垂直于平面（CPP）磁阻传感器定义的电流的双角铣削公开(公告)号：US20050269288A1
公开(公告)日：2005-12-08
申请号：US11200757
申请日：2005-08-09
IPC分类号： G11B5/31 , G11B5/39 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , G11B5/127 , G11B5/33 , H04R31/00
CPC分类号： B82Y10/00 , B82Y25/00 , G01R33/09 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01J2237/3114 , H01L43/08 , H01L43/12 , Y10T29/49046
摘要： A method for constructing a magnetoresistive sensor which eliminates all redeposited material (redep) from the sides of the sensor. The method involves forming a mask over a plurality of sensor layers, and then performing an ion mill at an angle that is nearly normal to the surface of the sensor layers. A second (glancing) ion mill is then performed at a larger angle with respect to the normal. The first ion mill may be 0-30 degrees with respect to normal, whereas the second ion mill can be 50-89 degrees with respect to normal. The first ion mill is performed with a larger bias voltage than the second ion mill. The higher bias voltage of the first ion mill provides a well collimated ion beam to form straight vertical side walls. The lower bias voltage of the second ion mill prevent damage to the sensor layers during the removal of redep from the sides of the sensor.
摘要翻译： 一种用于构造磁阻传感器的方法，其从传感器的侧面消除所有再沉积的材料（重新进行）。 该方法包括在多个传感器层上形成掩模，然后以与传感器层的表面几乎垂直的角度执行离子磨。 然后相对于法线以较大的角度执行第二（扫视）离子磨。 第一离子磨可相对于正常为0-30度，而第二离子磨可相对于正常为50-89度。 第一离子磨机以比第二离子磨机更大的偏压进行。 第一离子磨的较高的偏置电压提供了准直的离子束以形成直立的垂直侧壁。 第二离子磨的偏置电压较低可以防止传感器层从传感器的侧面移除重新进行检测。
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5.发明申请Method of partial depth material removal for fabrication of CPP read sensor 失效用于制造CPP读取传感器的部分深度材料去除方法公开(公告)号：US20070028441A1
公开(公告)日：2007-02-08
申请号：US11197957
申请日：2005-08-05
IPC分类号： C23C14/32
CPC分类号： H01F41/308 , B82Y25/00 , B82Y40/00 , G11B5/3163 , G11B5/3903 , H01F10/3268 , Y10T29/49032 , Y10T29/49044
摘要： A method for fabricating a read head sensor for a magnetic disk drive is presented. The method includes providing a layered wafer stack to be shaped, where the layered wafer stack includes a free layer, a barrier layer and a pinned layer. A single- or multi-layered photoresist mask is formed upon the layered wafer stack to be shaped. A material removal source is provided and used to perform a partial depth material removal within a partial depth material removal range which extends from the free layer to within the pinned layer to a partial depth material removal endpoint. In various embodiments, this depth endpoint lies at or within the barrier layer or within but not through the pinned layer.
摘要翻译： 提出了一种用于制造用于磁盘驱动器的读取头传感器的方法。 该方法包括提供待成形的层状晶片叠层，其中层状晶片堆叠包括自由层，阻挡层和钉扎层。 单层或多层光刻胶掩模形成在待成形的层状晶片叠层上。 提供材料去除源并用于在部分深度材料去除范围内执行部分深度材料去除，该部分深度材料去除范围从自由层延伸到钉扎层内至部分深度材料去除端点。 在各种实施例中，该深度端点位于或在阻挡层内或内部但不穿过被钉扎层。
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6.发明申请Read head having shaped read sensor-biasing layer junctions using partial milling and method of fabrication 失效读头使用部分铣削和制造方法成形读取传感器偏置层结公开(公告)号：US20060067009A1
公开(公告)日：2006-03-30
申请号：US10952427
申请日：2004-09-27
CPC分类号： G11B5/3932 , G11B5/3903 , G11B5/398 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is disclosed for fabricating a read head for a magnetic disk drive having a read head sensor and a hard bias layer, where the read head has a shaped junction between the read head sensor and the hard bias layer. The method includes providing a layered wafer stack to be shaped. A single- or multi-layered photoresist mask having no undercut is deposited upon the layered wafer stack to be shaped. The layered wafer stack is shaped by the output of a milling source, where the shaping includes partial milling to within a partial milling range to form a shaped junction. A hard bias layer is then deposited which is in contact with the shaped junction of the wafer stack. A read head and a magnetic hard disk drive having a read head layer stack which has been partially milled are also disclosed.
摘要翻译： 公开了一种用于制造具有读取头传感器和硬偏置层的磁盘驱动器的读取头的方法，其中读取头在读取头传感器和硬偏置层之间具有成形结。 该方法包括提供待成形的分层晶片叠层。 没有底切的单层或多层光致抗蚀剂掩模沉积在待成形的分层晶片叠层上。 分层晶片堆叠通过铣削源的输出成形，其中成形包括部分铣削以在部分铣削范围内以形成成形接合部。 然后沉积与晶片叠层的成形结接触的硬偏压层。 还公开了一种具有已经被部分铣削的读取头层堆叠的读取头和磁性硬盘驱动器。
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7.发明申请公开(公告)号：US20070188939A1
公开(公告)日：2007-08-16
申请号：US11352491
申请日：2006-02-10
申请人： Robert Beach , Wipul Jayasekara , Vladimir Nikitin
发明人： Robert Beach , Wipul Jayasekara , Vladimir Nikitin
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/40
摘要： In a CPP MR device such as a tunnel magnetoresistive (TMR) device, shoulders that have a magnetic moment that is matched to the magnetic moments of the free layer extend between the free layer and the S2 shield to provide an electrical path from one shoulder, through the shield, to the other shoulder for dissipating edge charges. Thus, a CPP MR device may include a seed stack, a pinned stack on the seed stack, and a tunnel barrier on the pinned stack. A free stack may be on the tunnel barrier, and the free stack can include a free sublayer separated from a magnetic shield and a path for dissipating edge charges in the free stack through the magnetic shield.
摘要翻译： 在诸如隧道磁阻（TMR）器件的CPP MR器件中，具有与自由层的磁矩匹配的磁矩的肩部在自由层和S 2屏蔽之间延伸以提供从一个肩部 ，通过屏蔽，到另一肩，消散边缘电荷。 因此，CPP MR装置可以包括种子堆叠，种子堆叠上的钉扎堆叠以及钉扎堆叠上的隧道势垒。 自由堆叠可以在隧道屏障上，并且自由堆叠可以包括与磁屏蔽分离的自由子层和用于通过磁屏蔽消散自由堆叠中的边缘电荷的路径。
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8.发明授权Magnetic tunnel junction sensor with insulating antiferromagnetic material extending from free layer extensions to electrically conductive lead 失效具有绝缘反铁磁材料的磁性隧道结传感器，从自由层延伸延伸到导电引线公开(公告)号：US07123455B2
公开(公告)日：2006-10-17
申请号：US10622033
申请日：2003-07-16
申请人： Wipul Jayasekara
发明人： Wipul Jayasekara
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A magnetic tunnel junction (MTJ) sensor in which the free layer longitudinal biasing elements are coupled, without insulation, to the free layer outside of the MTJ stack to provide reliable non-shunting MTJ free layer stabilization without extremely thin dielectric layers. In one embodiment, hard magnetic (HM) layers are disposed in contact with the free layer outside of and separated from the MTJ stack active region by a thick dielectric layer. In another embodiment, antiferromagnetic (AFM) bias layers are disposed in contact with the free layer outside of and separated from the MTJ stack active region by a thick dielectric layer. In other embodiments, nonconductive HM layers are disposed either in contact with the free layer outside of the MTJ stack active region and/or in abutting contact with the MTJ stack active region.
摘要翻译： 一种磁性隧道结（MTJ）传感器，其中自由层纵向偏置元件无需绝缘地连接到MTJ堆叠之外的自由层，以提供可靠的非分流MTJ自由层稳定性，而无需极薄的电介质层。 在一个实施例中，硬磁（HM）层被设置成与厚电介质层在MTJ叠层有源区之外的自由层接触。 在另一个实施例中，反铁磁（AFM）偏置层设置成与厚电介质层在MTJ堆叠有源区之外的自由层接触。 在其它实施例中，非导电HM层设置为与MTJ堆叠有源区域外部的自由层接触和/或与MTJ堆叠有源区域邻接接触。
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9.发明申请Magnetic head and method of making the same using an etch-stop layer for removing portions of the capping layer 审中-公开磁头及使用蚀刻停止层制造上述盖层的部分的方法公开(公告)号：US20060132969A1
公开(公告)日：2006-06-22
申请号：US11301986
申请日：2005-12-12
申请人： Wipul Jayasekara
发明人： Wipul Jayasekara
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , C23F4/00 , G11B5/3106 , G11B5/3163 , G11B5/332 , G11B5/3903 , G11B2005/3996
摘要： A magnetic head, comprising a read sensor formed in a central region, the read sensor including a free layer; an etch-stop layer formed over the free layer; and a capping layer formed over the free layer.
摘要翻译： 一种磁头，包括形成在中央区域的读取传感器，所述读取传感器包括自由层; 形成在自由层上的蚀刻停止层; 以及形成在自由层上的覆盖层。
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公开(公告)号：US20060067005A1
公开(公告)日：2006-03-30
申请号：US10955701
申请日：2004-09-30
申请人： Wipul Jayasekara
发明人： Wipul Jayasekara
摘要： A magnetic head is disclosed having a CPP read head which produces reduced cross-track interference. The CPP read head includes a read sensor, a first shield and a second shield. The second shield has side drapes having an edge portion adjacent to the read sensor. The side drapes include a plurality of laminated layers which discourages formation of closure domains at the edge portions, and thus maintaining the side drapes in a state of high magnetic permeability. The laminated layers each include a magnetic layer and a non-magnetic spacer layer. Also disclosed is an edge closed lamination structure.
摘要翻译： 公开了一种具有产生减小的交叉磁道干扰的CPP读取头的磁头。 CPP读取头包括读取传感器，第一屏蔽和第二屏蔽。 第二屏蔽件具有侧面，其具有与读取传感器相邻的边缘部分。 侧帘包括多个层压层，其阻止在边缘部分处形成封闭结构域，并且因此将侧帘保持在高磁导率的状态。 层叠层各自包括磁性层和非磁性间隔层。 还公开了一种边缘封闭层压结构。
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