摘要:
Systems and methods for determining memory module power requirements in a memory system. Embodiments include a memory system with a physical memory and a memory controller. The physical memory includes a plurality of memory devices. The memory controller is in communication with the physical memory and has a logical memory for storing power usage characteristics associated with the physical memory. The power usage characteristics are generated in response to a current operating environment of the memory system.
摘要:
Systems and methods for determining memory module power requirements in a memory system. Embodiments include a memory system with a physical memory and a memory controller. The physical memory includes a plurality of memory devices. The memory controller is in communication with the physical memory and has a logical memory for storing power usage characteristics associated with the physical memory. The power usage characteristics are generated in response to a current operating environment of the memory system.
摘要:
A memory system is provided that manages thermal conditions at a memory device level transparent to a memory controller. The memory systems comprises a memory hub device integrated in a memory module, a set of memory devices coupled to the memory hub device, and a first set of thermal sensors integrated in the set of memory devices. A thermal management control unit integrated in the memory hub device monitors a temperature of the set of memory devices sensed by the first set of thermal sensors. The memory hub device reduces a memory access rate to the set of memory devices in response to a predetermined thermal threshold being exceeded thereby reducing power used by the set of memory devices which in turn decreases the temperature of the set of memory devices.
摘要:
A memory system is provided that reduces latency by running a memory channel fully asynchronous from a memory device frequency. The memory system comprises a memory hub device integrated in a memory module. The memory hub device comprises a command queue that receives a memory access command from an external memory controller via a memory channel at a first operating frequency. The memory system also comprises a memory hub controller integrated in the memory hub device. The memory hub controller reads the memory access command from the command queue at a second operating frequency. By receiving the memory access command at the first operating frequency and reading the memory access command at the second operating frequency an asynchronous boundary is implemented. The first operating frequency is a maximum designed operating frequency of the memory channel and the first operating frequency is independent of the second operating frequency.
摘要:
A memory system is provided that increases the overall bandwidth of a memory channel by operating the memory channel at a independent frequency. The memory system comprises a memory hub device integrated in a memory module. The memory hub device comprises a command queue that receives a memory access command from an external memory controller via a memory channel at a first operating frequency. The memory system also comprises a memory hub controller integrated in the memory hub device. The memory hub controller reads the memory access command from the command queue at a second operating frequency. By receiving the memory access command at the first operating frequency and reading the memory access command at the second operating frequency an asynchronous boundary is implemented. Using the asynchronous boundary, the memory channel operates at a maximum designed operating bandwidth, which is independent of the second operating frequency.
摘要:
A memory system is provided that implements an asynchronous boundary in a memory module. The memory system comprises a memory hub device integrated in a memory module. The memory system also comprises a set of memory devices coupled to the memory hub device. The memory hub device comprises a command queue that receives a memory access command from an external memory controller via a memory channel at a first operating frequency. The memory system further comprises a memory hub controller integrated in the memory hub device. The memory hub controller reads the memory access command from the command queue at a second operating frequency. By receiving the memory access command at the first operating frequency and reading the memory access command at the second operating frequency an asynchronous boundary is implemented within the memory hub device of the memory module.
摘要:
A memory system is provided that manages thermal conditions at a memory device level transparent to a memory controller. The memory systems comprises a memory hub device integrated in a memory module, a set of memory devices coupled to the memory hub device, and a first set of thermal sensors integrated in the set of memory devices. A thermal management control unit integrated in the memory hub device monitors a temperature of the set of memory devices sensed by the first set of thermal sensors. The memory hub device reduces a memory access rate to the set of memory devices in response to a predetermined thermal threshold being exceeded thereby reducing power used by the set of memory devices which in turn decreases the temperature of the set of memory devices.
摘要:
A memory system is provided that provides memory system power reduction without reducing overall memory system performance. The memory system comprises a memory hub device integrated in a memory module. The memory hub device comprises a command queue that receives a memory access command from an memory controller via a memory channel at a first operating frequency. The memory system also comprises a memory hub controller integrated in the memory hub device. The memory hub controller reads the memory access command from the command queue at a second operating frequency. By receiving the memory access command at the first operating frequency and reading the memory access command at the second operating frequency an asynchronous boundary is implemented. Using the asynchronous boundary, the memory channel operates at a maximum designed operating bandwidth while the second operating frequency is independently decreased to reduce power being consumed by the set of memory devices.
摘要:
A memory system is provided that implements an asynchronous boundary in a memory module. The memory system comprises a memory hub device integrated in a memory module. The memory system also comprises a set of memory devices coupled to the memory hub device. The memory hub device comprises a command queue that receives a memory access command from an external memory controller via a memory channel at a first operating frequency. The memory system further comprises a memory hub controller integrated in the memory hub device. The memory hub controller reads the memory access command from the command queue at a second operating frequency. By receiving the memory access command at the first operating frequency and reading the memory access command at the second operating frequency an asynchronous boundary is implemented within the memory hub device of the memory module.
摘要:
A memory system is provided that reduces latency by running a memory channel fully asynchronous from a memory device frequency. The memory system comprises a memory hub device integrated in a memory module. The memory hub device comprises a command queue that receives a memory access command from an external memory controller via a memory channel at a first operating frequency. The memory system also comprises a memory hub controller integrated in the memory hub device. The memory hub controller reads the memory access command from the command queue at a second operating frequency. By receiving the memory access command at the first operating frequency and reading the memory access command at the second operating frequency an asynchronous boundary is implemented. The first operating frequency is a maximum designed operating frequency of the memory channel and the first operating frequency is independent of the second operating frequency.