公开(公告)号：US07791933B2

公开(公告)日：2010-09-07

申请号：US11963119

申请日：2007-12-21

申请人： Mark Lamorey ,  Thomas Happ

发明人： Mark Lamorey ,  Thomas Happ

IPC分类号： G11C11/00

CPC分类号： G11C29/02 ,  G11C7/00 ,  G11C13/0004 ,  G11C13/0023 ,  G11C13/0069 ,  G11C29/021 ,  G11C29/028 ,  G11C29/50 ,  G11C2013/0078 ,  G11C2029/5006 ,  G11C2213/79

摘要： A system of writing data to a phase change random access memory (PCRAM) on an integrated circuit (IC), and a design structure including the IC embodied in a machine readable medium are disclosed. The system includes an array of phase change elements with a plurality of devices providing independent control of a row access and a column access to the PCRAM. A column line (bit line) is pre-charged to a single predetermined level prior to enabling current flow to a corresponding selected phase change element. A current flow in the phase change element with a row (word line) is initiated once the column (bit line) has been pre-charged, to write data to the PCRAM cell. The current flow is terminated in the phase change element by closing the column line (bit line) preferably by quenching.

摘要翻译： 公开了一种将数据写入集成电路（IC）上的相变随机存取存储器（PCRAM）的系统，以及包括体现在机器可读介质中的IC的设计结构。 该系统包括具有提供行访问的独立控制和对PCRAM的列访问的多个设备的相变元件阵列。 在使电流流动到相应的选定相变元件之前，列线（位线）被预充电到单个预定电平。 一旦列（位线）已预充电，就会启动具有行（字线）的相变元件中的电流，以将数据写入PCRAM单元。 通过优选通过淬火闭合列线（位线），在相变元件中终止电流。

公开(公告)号：US07626860B2

公开(公告)日：2009-12-01

申请号：US11690451

申请日：2007-03-23

申请人： Mark Lamorey ,  Thomas Happ

发明人： Mark Lamorey ,  Thomas Happ

IPC分类号： G11C11/00

CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C2013/0078

摘要： A method and system of writing data to a phase change random access memory (PCRAM) on an integrated circuit (IC). The method and system includes an array of phase change elements with a plurality of devices providing independent control of a row access and a column access to the PCRAM. A column line (bit line) is pre-charged to a single predetermined level prior to enabling current flow to a corresponding selected phase change element. A current flow in the phase change element with a row (word line) is initiated once the column (bit line) has been pre-charged, to write data to the PCRAM cell. The current flow is terminated in the phase change element by closing the column line (bit line) preferably by quenching.

摘要翻译： 将数据写入集成电路（IC）上的相变随机存取存储器（PCRAM）的方法和系统。 该方法和系统包括具有提供行访问的独立控制和对PCRAM的列访问的多个设备的相变元件阵列。 在使电流流动到相应的选定相变元件之前，列线（位线）被预充电到单个预定电平。 一旦列（位线）已预充电，就会启动具有行（字线）的相变元件中的电流，以将数据写入PCRAM单元。 通过优选通过淬火闭合列线（位线），在相变元件中终止电流。

公开(公告)号：US20090161416A1

公开(公告)日：2009-06-25

申请号：US11963119

申请日：2007-12-21

申请人： Mark Lamorey ,  Thomas Happ

发明人： Mark Lamorey ,  Thomas Happ

IPC分类号： G11C11/00 ,  G11C7/00

CPC分类号： G11C29/02 ,  G11C7/00 ,  G11C13/0004 ,  G11C13/0023 ,  G11C13/0069 ,  G11C29/021 ,  G11C29/028 ,  G11C29/50 ,  G11C2013/0078 ,  G11C2029/5006 ,  G11C2213/79

摘要： A system of writing data to a phase change random access memory (PCRAM) on an integrated circuit (IC), and a design structure including the IC embodied in a machine readable medium are disclosed. The system includes an array of phase change elements with a plurality of devices providing independent control of a row access and a column access to the PCRAM. A column line (bit line) is pre-charged to a single predetermined level prior to enabling current flow to a corresponding selected phase change element. A current flow in the phase change element with a row (word line) is initiated once the column (bit line) has been pre-charged, to write data to the PCRAM cell. The current flow is terminated in the phase change element by closing the column line (bit line) preferably by quenching.

摘要翻译： 公开了一种将数据写入集成电路（IC）上的相变随机存取存储器（PCRAM）的系统，以及包括体现在机器可读介质中的IC的设计结构。 该系统包括具有提供行访问的独立控制和对PCRAM的列访问的多个设备的相变元件阵列。 在使电流流动到相应的选定相变元件之前，列线（位线）被预充电到单个预定电平。 一旦列（位线）已预充电，就会启动具有行（字线）的相变元件中的电流，以将数据写入PCRAM单元。 通过优选通过淬火闭合列线（位线），在相变元件中终止电流。

公开(公告)号：US20080232158A1

公开(公告)日：2008-09-25

申请号：US11690451

申请日：2007-03-23

申请人： Mark Lamorey ,  Thomas Happ

发明人： Mark Lamorey ,  Thomas Happ

IPC分类号： G11C11/00

CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C2013/0078

摘要： A method and system of writing data to a phase change random access memory (PCRAM) on an integrated circuit (IC). The method and system includes an array of phase change elements with a plurality of devices providing independent control of a row access and a column access to the PCRAM. A column line (bit line) is pre-charged to a single predetermined level prior to enabling current flow to a corresponding selected phase change element. A current flow in the phase change element with a row (word line) is initiated once the column (bit line) has been pre-charged, to write data to the PCRAM cell. The current flow is terminated in the phase change element by closing the column line (bit line) preferably by quenching.

摘要翻译： 将数据写入集成电路（IC）上的相变随机存取存储器（PCRAM）的方法和系统。 该方法和系统包括具有提供行访问的独立控制和对PCRAM的列访问的多个设备的相变元件阵列。 在使电流流动到相应的选定相变元件之前，列线（位线）被预充电到单个预定电平。 一旦列（位线）已预充电，就会启动具有行（字线）的相变元件中的电流，以将数据写入PCRAM单元。 通过优选通过淬火闭合列线（位线），在相变元件中终止电流。

公开(公告)号：US08742387B2

公开(公告)日：2014-06-03

申请号：US12145608

申请日：2008-06-25

申请人： Thomas Happ ,  Franz Kreupl ,  Jan Boris Philipp ,  Petra Majewski

发明人： Thomas Happ ,  Franz Kreupl ,  Jan Boris Philipp ,  Petra Majewski

IPC分类号： H01L47/00 ,  H01L45/00

CPC分类号： H01L45/1253 ,  G11C13/0004 ,  G11C2213/79 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/141 ,  H01L45/146

摘要： An integrated circuit includes a memory cell with a resistance changing memory element. The resistance changing memory element includes a first electrode, a second electrode, and a resistivity changing material disposed between the first and second electrodes, where the resistivity changing material is configured to change resistive states in response to application of a voltage or current to the first and second electrodes. In addition, at least one of the first electrode and the second electrode comprises an insulator material including a self-assembled electrically conductive element formed within the insulator material. The self-assembled electrically conductive element formed within the insulator material remains stable throughout the operation of switching the resistivity changing material to different resistive states.

摘要翻译： 集成电路包括具有电阻变化存储元件的存储单元。 电阻变化存储元件包括第一电极，第二电极和设置在第一和第二电极之间的电阻率变化材料，其中电阻率变化材料被配置为响应于施加电压或电流而改变电阻状态 和第二电极。 此外，第一电极和第二电极中的至少一个包括绝缘体材料，其包括形成在绝缘体材料内的自组装导电元件。 形成在绝缘体材料内的自组装导电元件在将电阻率变化材料切换到不同电阻状态的整个操作期间保持稳定。

公开(公告)号：US20120285512A1

公开(公告)日：2012-11-15

申请号：US13519578

申请日：2011-01-27

申请人： Jan Boris Philipp ,  Thomas Happ

发明人： Jan Boris Philipp ,  Thomas Happ

IPC分类号： H01L31/05 ,  H01L31/18

CPC分类号： H01L31/18 ,  H01L31/046 ,  H01L31/0749 ,  Y02E10/541

摘要： A solar cell array is described which can be designed in particular as a thin-film solar module. A production method for a solar cell array is further described.

摘要翻译： 描述了可以特别设计为薄膜太阳能模块的太阳能电池阵列。 进一步描述太阳能电池阵列的制造方法。

公开(公告)号：US08250293B2

公开(公告)日：2012-08-21

申请号：US12687951

申请日：2010-01-15

申请人： Thomas Happ ,  Jan Boris Philipp

发明人： Thomas Happ ,  Jan Boris Philipp

IPC分类号： G06F12/10 ,  G06F12/16

CPC分类号： G11C11/16 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0002 ,  G11C13/0035 ,  G11C13/0069

摘要： According to one embodiment of the present invention, a method of operating an integrated circuit including a plurality of resistance changing memory cells grouped into physical memory units is provided. The method includes: Monitoring writing access numbers assigned to the physical memory units, each writing access number reflecting the number of writing accesses to the physical memory unit to which the writing access number is assigned; if the value of a writing access number assigned to a first physical memory unit exceeds a writing access threshold value, a data exchange process is carried out during which the data content stored within the first physical memory unit is exchanged with the data content of a second physical memory unit having a writing access number of a lower value.

摘要翻译： 根据本发明的一个实施例，提供了一种操作集成电路的方法，该集成电路包括分组成物理存储器单元的多个电阻变化存储器单元。 该方法包括：监视分配给物理存储器单元的写入访问号码，每个写入访问号码反映写入访问次数到写入访问号码的物理存储单元; 如果分配给第一物理存储器单元的写访问号码的值超过写访问阈值，则执行数据交换处理，在该数据交换处理期间，存储在第一物理存储单元内的数据内容与第二物理存储单元的数据内容交换 物理存储单元具有较低值的写入访问号。

公开(公告)号：US08084799B2

公开(公告)日：2011-12-27

申请号：US11488422

申请日：2006-07-18

申请人： Thomas Happ ,  Jan Boris Philipp

发明人： Thomas Happ ,  Jan Boris Philipp

IPC分类号： H01L27/108

CPC分类号： G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2013/009 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

摘要： A memory cell includes a first electrode, a second electrode, and phase change material between the first electrode and the second electrode. The phase change material has a step-like programming characteristic. The first electrode, the second electrode, and the phase change material form a via or trench memory cell.

摘要翻译： 存储单元包括在第一电极和第二电极之间的第一电极，第二电极和相变材料。 相变材料具有阶梯状编程特性。 第一电极，第二电极和相变材料形成通孔或沟槽存储单元。

公开(公告)号：US08017930B2

公开(公告)日：2011-09-13

申请号：US11643438

申请日：2006-12-21

申请人： Jan Boris Philipp ,  Thomas Happ

发明人： Jan Boris Philipp ,  Thomas Happ

IPC分类号： H01L47/00

CPC分类号： H01L45/1675 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148

摘要： A memory cell includes a first electrode, a storage location, and a second electrode. The storage location includes a phase change material and contacts the first electrode. The storage location has a first cross-sectional width. The second electrode contacts the storage location and has a second cross-sectional width greater than the first cross-sectional width. The first electrode, the storage location, and the second electrode form a pillar phase change memory cell.

摘要翻译： 存储单元包括第一电极，存储位置和第二电极。 存储位置包括相变材料并与第一电极接触。 存储位置具有第一横截面宽度。 第二电极接触存储位置并且具有大于第一横截面宽度的第二横截面宽度。 第一电极，存储位置和第二电极形成柱状相变存储单元。

公开(公告)号：US07906368B2

公开(公告)日：2011-03-15

申请号：US11771501

申请日：2007-06-29

申请人： Matthew Breitwisch ,  Thomas Happ ,  Eric A. Joseph ,  Hsiang-Lan Lung ,  Jan Boris Philipp

发明人： Matthew Breitwisch ,  Thomas Happ ,  Eric A. Joseph ,  Hsiang-Lan Lung ,  Jan Boris Philipp

IPC分类号： H01L21/06

CPC分类号： H01L45/1675 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

摘要： An embodiment of the present invention includes a method of forming a nonvolatile phase change memory (PCM) cell. This method includes forming at least one bottom electrode; forming at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; forming at least one heater layer on at least a portion of an upper surface of the phase change material layer; and shaping the heater layer into a tapered shape, such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.

摘要翻译： 本发明的实施例包括形成非易失性相变存储器（PCM）单元的方法。 该方法包括形成至少一个底部电极; 在所述底部电极的上表面的至少一部分上形成至少一个相变材料层; 在所述相变材料层的上表面的至少一部分上形成至少一个加热层; 并且将加热器层成形为锥形，使得加热器层的上表面的横截面宽度大于与相变材料层接触的加热器层的底表面的横截面宽度。