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    Resistive memory devices with improved resistive changing elements
    1.
    发明授权
    Resistive memory devices with improved resistive changing elements 有权
    具有改进的电阻变化元件的电阻式存储器件

    公开(公告)号：US08742387B2

    公开(公告)日：2014-06-03

    申请号：US12145608

    申请日：2008-06-25

    申请人： Thomas Happ ,  Franz Kreupl ,  Jan Boris Philipp ,  Petra Majewski

    发明人： Thomas Happ ,  Franz Kreupl ,  Jan Boris Philipp ,  Petra Majewski

    IPC分类号： H01L47/00 ,  H01L45/00

    CPC分类号： H01L45/1253 ,  G11C13/0004 ,  G11C2213/79 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/141 ,  H01L45/146

    摘要： An integrated circuit includes a memory cell with a resistance changing memory element. The resistance changing memory element includes a first electrode, a second electrode, and a resistivity changing material disposed between the first and second electrodes, where the resistivity changing material is configured to change resistive states in response to application of a voltage or current to the first and second electrodes. In addition, at least one of the first electrode and the second electrode comprises an insulator material including a self-assembled electrically conductive element formed within the insulator material. The self-assembled electrically conductive element formed within the insulator material remains stable throughout the operation of switching the resistivity changing material to different resistive states.

    摘要翻译： 集成电路包括具有电阻变化存储元件的存储单元。 电阻变化存储元件包括第一电极，第二电极和设置在第一和第二电极之间的电阻率变化材料，其中电阻率变化材料被配置为响应于施加电压或电流而改变电阻状态 和第二电极。 此外，第一电极和第二电极中的至少一个包括绝缘体材料，其包括形成在绝缘体材料内的自组装导电元件。 形成在绝缘体材料内的自组装导电元件在将电阻率变化材料切换到不同电阻状态的整个操作期间保持稳定。

    Resistive Memory Devices with Improved Resistive Changing Elements
    2.
    发明申请
    Resistive Memory Devices with Improved Resistive Changing Elements 有权
    具有改进的电阻变化元件的电阻式存储器件

    公开(公告)号：US20090321706A1

    公开(公告)日：2009-12-31

    申请号：US12145608

    申请日：2008-06-25

    申请人： Thomas Happ ,  Franz Kreupl ,  Jan Boris Philipp ,  Petra Majewski

    发明人： Thomas Happ ,  Franz Kreupl ,  Jan Boris Philipp ,  Petra Majewski

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1253 ,  G11C13/0004 ,  G11C2213/79 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/141 ,  H01L45/146

    摘要： An integrated circuit includes a memory cell with a resistance changing memory element. The resistance changing memory element includes a first electrode, a second electrode, and a resistivity changing material disposed between the first and second electrodes, where the resistivity changing material is configured to change resistive states in response to application of a voltage or current to the first and second electrodes. In addition, at least one of the first electrode and the second electrode comprises an insulator material including a self-assembled electrically conductive element formed within the insulator material. The self-assembled electrically conductive element formed within the insulator material remains stable throughout the operation of switching the resistivity changing material to different resistive states.

    摘要翻译： 集成电路包括具有电阻变化存储元件的存储单元。 电阻变化存储元件包括第一电极，第二电极和设置在第一和第二电极之间的电阻率变化材料，其中电阻率变化材料被配置为响应于施加电压或电流而改变电阻状态 和第二电极。 此外，第一电极和第二电极中的至少一个包括绝缘体材料，其包括形成在绝缘体材料内的自组装导电元件。 形成在绝缘体材料内的自组装导电元件在将电阻率变化材料切换到不同电阻状态的整个操作期间保持稳定。

    Data exchange in resistance changing memory for improved endurance
    8.
    发明授权
    Data exchange in resistance changing memory for improved endurance 有权
    电阻变化记忆中的数据交换，以提高耐力

    公开(公告)号：US08250293B2

    公开(公告)日：2012-08-21

    申请号：US12687951

    申请日：2010-01-15

    申请人： Thomas Happ ,  Jan Boris Philipp

    发明人： Thomas Happ ,  Jan Boris Philipp

    IPC分类号： G06F12/10 ,  G06F12/16

    CPC分类号： G11C11/16 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0002 ,  G11C13/0035 ,  G11C13/0069

    摘要： According to one embodiment of the present invention, a method of operating an integrated circuit including a plurality of resistance changing memory cells grouped into physical memory units is provided. The method includes: Monitoring writing access numbers assigned to the physical memory units, each writing access number reflecting the number of writing accesses to the physical memory unit to which the writing access number is assigned; if the value of a writing access number assigned to a first physical memory unit exceeds a writing access threshold value, a data exchange process is carried out during which the data content stored within the first physical memory unit is exchanged with the data content of a second physical memory unit having a writing access number of a lower value.

    摘要翻译： 根据本发明的一个实施例，提供了一种操作集成电路的方法，该集成电路包括分组成物理存储器单元的多个电阻变化存储器单元。 该方法包括：监视分配给物理存储器单元的写入访问号码，每个写入访问号码反映写入访问次数到写入访问号码的物理存储单元; 如果分配给第一物理存储器单元的写访问号码的值超过写访问阈值，则执行数据交换处理，在该数据交换处理期间，存储在第一物理存储单元内的数据内容与第二物理存储单元的数据内容交换 物理存储单元具有较低值的写入访问号。

    Pillar phase change memory cell
    10.
    发明授权
    Pillar phase change memory cell 有权
    支柱相变存储单元

    公开(公告)号：US08017930B2

    公开(公告)日：2011-09-13

    申请号：US11643438

    申请日：2006-12-21

    申请人： Jan Boris Philipp ,  Thomas Happ

    发明人： Jan Boris Philipp ,  Thomas Happ

    IPC分类号： H01L47/00

    CPC分类号： H01L45/1675 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148

    摘要： A memory cell includes a first electrode, a storage location, and a second electrode. The storage location includes a phase change material and contacts the first electrode. The storage location has a first cross-sectional width. The second electrode contacts the storage location and has a second cross-sectional width greater than the first cross-sectional width. The first electrode, the storage location, and the second electrode form a pillar phase change memory cell.

    摘要翻译： 存储单元包括第一电极，存储位置和第二电极。 存储位置包括相变材料并与第一电极接触。 存储位置具有第一横截面宽度。 第二电极接触存储位置并且具有大于第一横截面宽度的第二横截面宽度。 第一电极，存储位置和第二电极形成柱状相变存储单元。