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    BRAKE
    2.
    发明申请
    BRAKE 有权
    制动

    公开(公告)号：US20110278112A1

    公开(公告)日：2011-11-17

    申请号：US13043554

    申请日：2011-03-09

    申请人： Mark Norman ,  Alexander Howard ,  Jonathan Jackson ,  Anthony Williams ,  Simon Fisher

    发明人： Mark Norman ,  Alexander Howard ,  Jonathan Jackson ,  Anthony Williams ,  Simon Fisher

    IPC分类号： F16D51/12

    CPC分类号： F16D51/20 ,  F16D2121/14 ,  F16D2125/26 ,  F16D2125/30 ,  F16D2125/56

    摘要： A brake includes a brake shoe moveable between an engaged position and a disengaged position and defining an axis of rotation of an associated brake drum. The brake includes an actuation shaft rotatable about a shaft axis and an actuation device for transferring rotational movement of the actuation shaft into movement of the brake shoe from the disengaged position to the engaged position. The axis of rotation is non-parallel to the shaft axis.

    摘要翻译： 制动器包括可在接合位置和脱离位置之间移动并且限定相关联的制动鼓的旋转轴线的制动蹄。 制动器包括可围绕轴线旋转的致动轴和用于将致动轴的旋转运动转移到制动瓦从分离位置移动到接合位置的致动装置。 旋转轴线不平行于轴的轴线。

    TUBE COUPLING FOR CONNECTING AN OBJECT TO ONE END OF A TUBE IN A UHV TIGHT MANNER AND VESSEL WITH SUCH A TUBE COUPLING
    3.
    发明申请
    TUBE COUPLING FOR CONNECTING AN OBJECT TO ONE END OF A TUBE IN A UHV TIGHT MANNER AND VESSEL WITH SUCH A TUBE COUPLING 审中-公开
    用于将对象连接到特高压管道中的管道的一端的管道联接器和具有这样的管道联接的船舶

    公开(公告)号：US20120227850A1

    公开(公告)日：2012-09-13

    申请号：US13496381

    申请日：2009-09-16

    申请人： Alexander Howard ,  Rico Chandrasekharan ,  Giovanna Davatz

    发明人： Alexander Howard ,  Rico Chandrasekharan ,  Giovanna Davatz

    IPC分类号： F16L19/00 ,  F16L55/11

    CPC分类号： G02B7/007 ,  F16L19/06

    摘要： The invention relates to a tube coupling (TC2) for connecting an object (22) to one end of a tube (20) in a UHV tight manner, withstanding pressures up to several hundred bars and accommodating temperature differences from heating or cooling, said tube coupling (TC2) comprising said tube (20) and a tube fitting (10), wherein said tube fitting (10) comprises a basically cylindrical body (11) with a first central bore for receiving said tube (20), such that said tube (20) is axially supported by a radially extending shoulder (18) at the inner end of said first central bore, and wherein said tube (20) is pressed with its end face against said radially extending shoulder (18) by means of a gripping arrangement (13, 14, 15). The vacuum capability is achieved with simple components by providing a gasket (21) between said end face of said tube (20) and said radially extending shoulder (18) at the inner end of said first central bore (16).

    摘要翻译： 本发明涉及一种用于以特高压紧密方式将物体（22）连接到管（20）的一端的管接头（TC2），承受高达几百巴的压力并且适应与加热或冷却的温度差，所述管 包括所述管（20）和管接头（10）的联接（TC2），其中所述管接头（10）包括具有用于接收所述管（20）的第一中心孔的基本上圆柱形的主体（11），使得所述管 （20）在所述第一中心孔的内端处由径向延伸的肩部（18）轴向地支撑，并且其中所述管（20）的端面通过夹紧的方式被压靠在所述径向延伸的肩部（18）上 安排（13,14,15）。 通过在所述管（20）的所述端面和所述第一中心孔（16）的内端处的所述径向延伸的肩部（18）之间提供垫圈（21），通过简单的部件实现真空能力。

    Method for Obtaining Information about a Radiation Source or a Material Interacting with a Radiation Source and a Measurement Setup for Performing the Method
    4.
    发明申请
    Method for Obtaining Information about a Radiation Source or a Material Interacting with a Radiation Source and a Measurement Setup for Performing the Method 有权
    获取有关辐射源或与辐射源相互作用的材料的信息的方法以及用于执行该方法的测量设置

    公开(公告)号：US20130204578A1

    公开(公告)日：2013-08-08

    申请号：US13806150

    申请日：2010-06-23

    申请人： Rico Chandrasekharan ,  Giovanna Davatz ,  Alexander Howard

    发明人： Rico Chandrasekharan ,  Giovanna Davatz ,  Alexander Howard

    IPC分类号： G01N23/08 ,  G06F17/18

    CPC分类号： G01N23/08 ,  G01N23/06 ,  G01T3/00 ,  G01V5/0008 ,  G06F17/18

    摘要： A method for obtaining information about an unknown neutron source or an unknown material interacting with a known neutron source comprises the steps of: (a) providing a radiation detector capable of delivering a neutron energy information allowing the production of response histogram(s) as a function of neutron energy, (b) measuring with said radiation detector neutrons being emitted from said unknown neutron source or from said unknown material, (c) deriving from said measured neutrons a neutron energy spectrum, especially in form of a histogram, (d) normalizing said energy spectrum or histogram relative to a parameter or set of parameters derived from the measurement of a different variable, (e) comparing said normalized energy spectrum or histogram with known energy spectra or histograms, and (f) drawing conclusions on the basis of said comparison about the nature of the unknown neutron source or unknown material.

    摘要翻译： 获得关于与已知中子源相互作用的未知中子源或未知材料的信息的方法包括以下步骤：（a）提供能够传递中子能量信息的辐射探测器，所述中子能量信息允许产生响应直方图为 （b）用所述辐射探测器测量中子从所述未知中子源或从所述未知材料发射的测量;（c）从所述测量的中子得到中子能谱，特别是以直方图的形式，（d） 将所述能谱或直方图相对于从不同变量的测量导出的参数或一组参数进行归一化，（e）将所述归一化能谱或直方图与已知能谱或直方图进行比较，以及（f）基于 对未知中子源或未知材料的性质进行了比较。

    USE OF SURFACTANTS TO CONTROL UNINTENTIONAL DOPANT IN SEMICONDUCTORS
    6.
    发明申请
    USE OF SURFACTANTS TO CONTROL UNINTENTIONAL DOPANT IN SEMICONDUCTORS 审中-公开
    使用表面活性剂控制半导体中的非均质掺杂剂

    公开(公告)号：US20070006801A1

    公开(公告)日：2007-01-11

    申请号：US11428940

    申请日：2006-07-06

    申请人： Gerald Stringfellow ,  Alexander Howard ,  David Chapman

    发明人： Gerald Stringfellow ,  Alexander Howard ,  David Chapman

    IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

    CPC分类号： C30B29/40 ,  C30B23/002 ,  C30B25/02

    摘要： The use of surfactants that do not themselves act as dopants and are isoelectronic with either the group III or group V host atoms during OMVPE growth significantly reduces the incorporation of background impurities such as carbon, oxygen, sulfur and/or silicon. For example, the use of the surfactants Sb or Bi significantly reduces the incorporation of background impurities such as carbon, oxygen, sulfur and/or silicon during the OMVPE growth of III/V semiconductor materials, for example GaAs, GaInP, and GaP layers. As a result, an effective method for controlling the incorporation of impurity atoms is adding a minute amount of surfactant during OMVPE growth.

    摘要翻译： 在OMVPE生长过程中，使用不属于掺杂剂并且与III族或V族主体原子同位的表面活性剂显着降低了背景杂质如碳，氧，硫和/或硅的掺入。 例如，在III / V半导体材料（例如GaAs，GaInP和GaP层）的OMVPE生长期间，使用表面活性剂Sb或Bi显着降低了背景杂质如碳，氧，硫和/或硅的掺入。 因此，控制杂质原子掺入的有效方法是在OMVPE生长期间加入微量的表面活性剂。