摘要:
A germanium (Ge)-doped gallium oxide (Ga2O3) semiconductor material and method of making are provided. In embodiments, a method of making the Ge-doped Ga2O3 semiconductor material includes: subjecting a Ga2O3 semiconductor material to neutron irradiation comprising a higher thermal neutron content than fast neutron content, thereby producing a Ge-doped Ga2O3 semiconductor material; and annealing the Ge-doped Ga2O3 semiconductor material at a temperature of at least 700° C. in an atmosphere of nitrogen gas, thereby generating an electrically conductive n-type Ge-doped Ga2O3 semiconductor material.
摘要:
Typical practice of the present invention performs measurement and processing of two forms of light emissions—viz., unfiltered and filtered—of a core-valence luminescent (CVL) scintillator impinged by ionizing radiation emanating from a radioactive source. When unfiltered, the CVL scintillator light emission is inclusive of gamma emissions and neutron emissions. When filtered by a filtering apparatus that transmits CVL light only, the CVL scintillator light emission is inclusive of gamma emissions but is exclusive of neutron emissions. Algorithmic comparison between the two sets of empirical data provides discriminative information regarding gamma emissions versus neutron emissions. Essentially, the difference is taken between the unfiltered pulse height spectra data and the filtered pulse height data. The set of pulse height spectral data thus computed via subtraction is indicative of the portion of the CVL scintillator light emissions that is inclusive of neutron emissions but is exclusive of gamma emissions.
摘要:
As typically embodied, the inventive method features bombardment of atomic nuclei with 3He ions in order to effect transmutation of atoms from a first atomic element to a second atomic element. Two notable inventive genres describe transmutation of: oxygen to nitrogen in an oxygen-containing target (e.g., including ZnO film); and, carbon to boron in a carbon-containing target (e.g., including SiC film). According to the former, transmutation of 16O to 15N occurs; more specifically, transmutation of 16O to 15O occurs via nuclear bombardment, and then transmutation of 15O to 15N occurs via decay by positron emission. According to the latter, transmutation of 12C to 11B occurs; more specifically, transmutation of 12C to 11C occurs via nuclear bombardment, and then transmutation of 11C to 11B occurs via decay by positron emission. Inventive practice frequently results in significant alteration of at least one physical property among: electronic carrier concentration; resistivity; photoconductivity; luminescence; morphology.
摘要:
A 13C diamond is doped by proton induced transmutation. P-type doping is achieved by the 13C(p,αγ)10B reaction. N-type doping is achieved by the 13C(p,γ)14N reaction. The transmutation reaction that occurs is determined by selection of proton beam energy. Stacks of junctions each calculated to be in the order of 10 nm thick have been achieved.
摘要:
Systems, processes, and apparatus are described through which fast neutrons are detected, their momenta are measured and a position of a source of the fast neutrons is determined from the measured momenta. For example, a multiple-cell neutron-sensitive camera is described. Each cell includes a neutron detection cell that also functions as a time expansion chamber and a micro-well detector coupled to the time expansion chamber.