Spectrally resolved pulse height analysis for neutron-gamma discrimination
    2.
    发明授权
    Spectrally resolved pulse height analysis for neutron-gamma discrimination 有权
    用于中子伽马鉴别的光谱分辨脉冲高度分析

    公开(公告)号:US09029784B1

    公开(公告)日:2015-05-12

    申请号:US13247010

    申请日:2011-09-28

    IPC分类号: G01T1/20 G01T3/06 G01T1/202

    CPC分类号: G01T3/06 G01T1/20 G01T1/2023

    摘要: Typical practice of the present invention performs measurement and processing of two forms of light emissions—viz., unfiltered and filtered—of a core-valence luminescent (CVL) scintillator impinged by ionizing radiation emanating from a radioactive source. When unfiltered, the CVL scintillator light emission is inclusive of gamma emissions and neutron emissions. When filtered by a filtering apparatus that transmits CVL light only, the CVL scintillator light emission is inclusive of gamma emissions but is exclusive of neutron emissions. Algorithmic comparison between the two sets of empirical data provides discriminative information regarding gamma emissions versus neutron emissions. Essentially, the difference is taken between the unfiltered pulse height spectra data and the filtered pulse height data. The set of pulse height spectral data thus computed via subtraction is indicative of the portion of the CVL scintillator light emissions that is inclusive of neutron emissions but is exclusive of gamma emissions.

    摘要翻译: 本发明的典型实践执行两种形式的光发射的测量和处理,即未过滤和过滤由辐射源辐射的电离辐射的核心价键发光(CVL)闪烁体。 当未过滤时,CVL闪烁体发光包括γ发射和中子发射。 当通过仅传输CVL光的滤波装置进行滤波时,CVL闪烁体发光是包括伽马辐射,但不包括中子发射。 两组经验数据之间的算法比较提供了有关伽马辐射与中子排放的辨别信息。 基本上,在未过滤的脉冲高度谱数据和滤波的脉冲高度数据之间取差。 这样通过减法计算的脉冲高度频谱数据集表示包含中子发射但不包括伽马发射的CVL闪烁体光发射部分。

    Doping of semiconductor materials by nuclear transmutation
    3.
    发明授权
    Doping of semiconductor materials by nuclear transmutation 有权
    通过核转化掺杂半导体材料

    公开(公告)号:US08363775B1

    公开(公告)日:2013-01-29

    申请号:US11998861

    申请日:2007-11-26

    IPC分类号: G21G1/10

    摘要: As typically embodied, the inventive method features bombardment of atomic nuclei with 3He ions in order to effect transmutation of atoms from a first atomic element to a second atomic element. Two notable inventive genres describe transmutation of: oxygen to nitrogen in an oxygen-containing target (e.g., including ZnO film); and, carbon to boron in a carbon-containing target (e.g., including SiC film). According to the former, transmutation of 16O to 15N occurs; more specifically, transmutation of 16O to 15O occurs via nuclear bombardment, and then transmutation of 15O to 15N occurs via decay by positron emission. According to the latter, transmutation of 12C to 11B occurs; more specifically, transmutation of 12C to 11C occurs via nuclear bombardment, and then transmutation of 11C to 11B occurs via decay by positron emission. Inventive practice frequently results in significant alteration of at least one physical property among: electronic carrier concentration; resistivity; photoconductivity; luminescence; morphology.

    摘要翻译: 如通常实施的,本发明的方法特征是用3He离子轰击原子核,以便实现原子从第一原子元素到第二原子元素的变换。 两个显着的发明类型描述了在含氧靶(例如包括ZnO膜)中的氧到氮的转化; 和含碳靶(例如包括SiC膜)中的碳与硼。 根据前者,发生16O〜15N的;变; 更具体地,通过核轰击发生16O至15O的变换,然后通过正电子发射衰减而发生150至15N的变换。 根据后者,发生12C至11B的变换; 更具体地,通过核轰击发生12C至11C的变换,然后通过正电子发射衰减而发生11C至11B的变换。 发明实践经常导致:电子载体浓度中的至少一种物理性质的显着变化; 电阻率 光电导率; 发光; 形态学。

    Doping wide band gap semiconductors
    4.
    发明授权
    Doping wide band gap semiconductors 有权
    掺杂宽带隙半导体

    公开(公告)号:US07795120B1

    公开(公告)日:2010-09-14

    申请号:US12560622

    申请日:2009-09-16

    IPC分类号: H01L21/261

    CPC分类号: H01L21/261 H01L21/324

    摘要: A 13C diamond is doped by proton induced transmutation. P-type doping is achieved by the 13C(p,αγ)10B reaction. N-type doping is achieved by the 13C(p,γ)14N reaction. The transmutation reaction that occurs is determined by selection of proton beam energy. Stacks of junctions each calculated to be in the order of 10 nm thick have been achieved.

    摘要翻译: 13C金刚石被质子诱导的变换掺杂。 通过13C(p,αγ)10B反应实现P型掺杂。 通过13C(p,γ)14N反应实现N型掺杂。 通过选择质子束能量来确定发生的变换反应。 已经实现了每个计算为10nm厚度的结的堆叠。

    Neutron Imaging Camera, Process and Apparatus for Detection of Special Materials
    5.
    发明申请
    Neutron Imaging Camera, Process and Apparatus for Detection of Special Materials 审中-公开
    中子成像相机,特殊材料检测工艺和设备

    公开(公告)号:US20090230315A1

    公开(公告)日:2009-09-17

    申请号:US12048972

    申请日:2008-03-14

    IPC分类号: G01T3/00

    CPC分类号: G01V5/0091

    摘要: Systems, processes, and apparatus are described through which fast neutrons are detected, their momenta are measured and a position of a source of the fast neutrons is determined from the measured momenta. For example, a multiple-cell neutron-sensitive camera is described. Each cell includes a neutron detection cell that also functions as a time expansion chamber and a micro-well detector coupled to the time expansion chamber.

    摘要翻译: 描述了通过其检测快中子的系统,过程和装置,测量它们的动量,并根据测量的动量确定快中子的源的位置。 例如,描述了一种多单元中子敏感相机。 每个电池包括也用作时间膨胀室的中子检测单元和耦合到时间膨胀室的微孔检测器。