公开(公告)号：US5937282A

公开(公告)日：1999-08-10

申请号：US893550

申请日：1997-07-11

申请人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Naoto Kusumoto ,  Satoshi Teramoto

发明人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Naoto Kusumoto ,  Satoshi Teramoto

IPC分类号： H01L29/786 ,  H01L21/20 ,  H01L21/336 ,  H01L21/423 ,  H01L21/00

CPC分类号： H01L21/2026 ,  H01L21/423 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757 ,  Y10S148/016 ,  Y10S148/093

摘要： In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.

公开(公告)号：US20020025612A1

公开(公告)日：2002-02-28

申请号：US09853588

申请日：2001-05-14

发明人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Naoto Kusumoto ,  Satoshi Teramoto

IPC分类号： H01L021/00

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/423 ,  H01L29/66757

摘要： In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.

公开(公告)号：US4128467A

公开(公告)日：1978-12-05

申请号：US881007

申请日：1978-02-24

申请人： Konrad Fischer

发明人： Konrad Fischer

IPC分类号： H01L21/423 ,  H01L29/221 ,  C23C15/00

CPC分类号： H01L29/221 ,  H01L21/423

摘要： A method of etching comprises etching a cadmium-mercury-telluride semiconductor layer by means of an ion beam.

摘要翻译： 蚀刻方法包括通过离子束蚀刻镉 - 汞 - 碲化物半导体层。

公开(公告)号：US20180261698A1

公开(公告)日：2018-09-13

申请号：US15456418

申请日：2017-03-10

申请人： Applied Materials, Inc.

发明人： Rodney Shunleong LIM ,  Dong-Kil YIM

IPC分类号： H01L29/786 ,  H01L29/207 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66 ,  H01L21/423 ,  H01L29/20 ,  H01L21/223

CPC分类号： H01L29/7869 ,  H01L21/2233 ,  H01L21/2236 ,  H01L21/423 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66522 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78681

摘要： Embodiments of the disclosure generally provide methods of forming thin film transistor (TFT) device structure with good interface management between active layers of a metal electrode layer and/or source/drain electrode layers and a nearby insulating material so as to provide high electrical performance devices, or for other suitable display applications. In one embodiment, a thin film transistor structure includes a contact region formed between fluorine-doped source and drain regions disposed on a substrate, a gate insulating layer disposed on the contact region, and a metal electrode layer disposed on the gate insulator layer.

公开(公告)号：US20180019344A1

公开(公告)日：2018-01-18

申请号：US15714018

申请日：2017-09-25

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Liangchen Yan

IPC分类号： H01L29/786 ,  H01L21/477 ,  H01L21/02 ,  H01L21/423 ,  H01L29/66 ,  H01L29/24

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/423 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/786

摘要： The disclosure provides a method of manufacturing a thin film transistor on a base substrate by patterning an active layer comprising a metal oxynitride, and treating the active layer with a plasma comprising oxygen.

公开(公告)号：US07229861B2

公开(公告)日：2007-06-12

申请号：US10288585

申请日：2002-11-06

申请人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Naoto Kusumoto ,  Satoshi Teramoto

发明人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Naoto Kusumoto ,  Satoshi Teramoto

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/8242 ,  H01L21/336 ,  H01L21/331

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/423 ,  H01L29/66757

摘要： In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.

摘要翻译： 在制造薄膜晶体管时，在基板上形成非晶硅膜之后，通过用包含镍作为金属元素的溶液（乙酸镍溶液）旋涂形成硅化镍层，其加速（促进）硅的结晶 并通过热处理。 选择性地将硅化镍层图案化以形成岛状硅化镍层。 非晶硅膜被图案化。 在移动激光器时照射激光，使得从形成硅化镍层的区域发生晶体生长，并且获得与单晶相同的区域（单畴区域）。

公开(公告)号：US06479329B2

公开(公告)日：2002-11-12

申请号：US09853588

申请日：2001-05-14

申请人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Naoto Kusumoto ,  Satoshi Teramoto

发明人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Naoto Kusumoto ,  Satoshi Teramoto

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/423 ,  H01L29/66757

摘要： In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.

摘要翻译： 在制造薄膜晶体管时，在基板上形成非晶硅膜之后，通过用包含镍作为金属元素的溶液（乙酸镍溶液）旋涂形成硅化镍层，其加速（促进）硅的结晶 并通过热处理。 选择性地将硅化镍层图案化以形成岛状硅化镍层。 非晶硅膜被图案化。 在移动激光器时照射激光，使得从形成硅化镍层的区域发生晶体生长，并且获得与单晶相同的区域（单畴区域）。

公开(公告)号：US4526624A

公开(公告)日：1985-07-02

申请号：US394816

申请日：1982-07-02

申请人： Thomas A. Tombrello ,  Yuanxun Qiu ,  Marcus H. Mendenhall

发明人： Thomas A. Tombrello ,  Yuanxun Qiu ,  Marcus H. Mendenhall

IPC分类号： H01L21/263 ,  H01L21/285 ,  H01L21/423 ,  H01L21/441 ,  H01L21/265 ,  C23C13/02

CPC分类号： H01L21/28575 ,  H01L21/263 ,  H01L21/2855 ,  H01L21/423 ,  H01L21/441

摘要： Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process results in improved adhesion without excessive doping and provides a low resistance contact to the semiconductor. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters. The process can be utilized to apply very small, low resistance electrodes (78) to light-emitting solid state laser diodes (60) to form a laser device 70.

摘要翻译： 诸如金或其它非绝缘体材料的金属的膜（12）通过用高能离子照射界面而牢固地结合到其它非绝缘体，例如半导体衬底（10），适当地为硅或砷化镓。 该过程导致改善的粘合性而不会过度掺杂，并提供对半导体的低电阻接触。 可以通过用可裂变元件或α发射体沉积或掺杂界面来​​结合厚层。 该方法可用于将非常小的低电阻电极（78）施加到发光固态激光二极管（60）以形成激光装置70。

公开(公告)号：US20240312793A1

公开(公告)日：2024-09-19

申请号：US18606024

申请日：2024-03-15

申请人： Marko J. Tadjer ,  Travis J. Anderson ,  Francis J. Kub ,  Alan G. Jacobs ,  Noel A. Guardala ,  John D. Brockman ,  John M. Gahl

发明人： Marko J. Tadjer ,  Travis J. Anderson ,  Francis J. Kub ,  Alan G. Jacobs ,  Noel A. Guardala ,  John D. Brockman ,  John M. Gahl

IPC分类号： H01L21/423 ,  C01G15/00 ,  C30B29/16 ,  C30B33/04 ,  H01L29/24

CPC分类号： H01L21/423 ,  C01G15/00 ,  C30B29/16 ,  C30B33/04 ,  H01L29/24 ,  C01P2002/54 ,  C01P2006/40 ,  C01P2006/88

摘要： A germanium (Ge)-doped gallium oxide (Ga2O3) semiconductor material and method of making are provided. In embodiments, a method of making the Ge-doped Ga2O3 semiconductor material includes: subjecting a Ga2O3 semiconductor material to neutron irradiation comprising a higher thermal neutron content than fast neutron content, thereby producing a Ge-doped Ga2O3 semiconductor material; and annealing the Ge-doped Ga2O3 semiconductor material at a temperature of at least 700° C. in an atmosphere of nitrogen gas, thereby generating an electrically conductive n-type Ge-doped Ga2O3 semiconductor material.

公开(公告)号：US10008612B2

公开(公告)日：2018-06-26

申请号：US15714018

申请日：2017-09-25

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Liangchen Yan

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L21/477 ,  H01L21/423 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/423 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78618

摘要： The disclosure provides a method of manufacturing a thin film transistor on a base substrate by patterning an active layer comprising a metal oxynitride, and treating the active layer with a plasma comprising oxygen.