Power Switch Temperature Control Device and Method
    1.
    发明申请
    Power Switch Temperature Control Device and Method 有权
    电源开关温度控制装置及方法

    公开(公告)号:US20110316606A1

    公开(公告)日:2011-12-29

    申请号:US12824891

    申请日:2010-06-28

    IPC分类号: H03K17/14

    摘要: An embodiment method for power switch temperature control comprises monitoring a power transistor for a delta-temperature fault, and monitoring the power transistor for an over-temperature fault. If a delta-temperature fault is detected, then the power transistor is commanded to turn off. If an over-temperature fault is detected, then the power transistor is commanded to turn off, and delta-temperature hysteresis cycling is disabled.

    摘要翻译: 用于功率开关温度控制的实施例方法包括监视功率晶体管的三角温度故障,并监视功率晶体管的过温故障。 如果检测到δ-温度故障,则命令关闭功率晶体管。 如果检测到过热故障,则命令关闭功率晶体管,并禁用增量 - 温度滞后循环。

    Power switch temperature control device and method
    2.
    发明授权
    Power switch temperature control device and method 有权
    电源开关温度控制装置及方法

    公开(公告)号:US08657489B2

    公开(公告)日:2014-02-25

    申请号:US12824891

    申请日:2010-06-28

    IPC分类号: G01J5/00

    摘要: An embodiment method for power switch temperature control comprises monitoring a power transistor for a delta-temperature fault, and monitoring the power transistor for an over-temperature fault. If a delta-temperature fault is detected, then the power transistor is commanded to turn off. If an over-temperature fault is detected, then the power transistor is commanded to turn off, and delta-temperature hysteresis cycling is disabled.

    摘要翻译: 用于功率开关温度控制的实施例方法包括监视功率晶体管的三角温度故障,并监视功率晶体管的过温故障。 如果检测到δ-温度故障,则命令关闭功率晶体管。 如果检测到过热故障,则命令关闭功率晶体管,并禁用增量 - 温度滞后循环。

    Current Control Circuits
    3.
    发明申请
    Current Control Circuits 有权
    电流控制电路

    公开(公告)号:US20100194462A1

    公开(公告)日:2010-08-05

    申请号:US12364304

    申请日:2009-02-02

    IPC分类号: H03K17/687

    CPC分类号: H03K17/0822

    摘要: Circuit, system and method of current control circuits are disclosed. In one embodiment, a control circuit includes a first MOS transistor and a second MOS transistor. The first source/drains of the first and the second MOS transistors are coupled to an output of a power source. A second source/drain of the first MOS transistor is coupled to a first output node of the current control circuit. A second source/drain of the second MOS transistor is coupled to a second output node of the current control circuit. The control circuit further includes a means to block flow of current from the first output node of the current control circuit to the second output node of the current control circuit.

    摘要翻译: 公开了电流控制电路的电路,系统和方法。 在一个实施例中,控制电路包括第一MOS晶体管和第二MOS晶体管。 第一和第二MOS晶体管的第一源极/漏极耦合到电源的输出端。 第一MOS晶体管的第二源/漏耦合到电流控制电路的第一输出节点。 第二MOS晶体管的第二源/漏耦合到电流控制电路的第二输出节点。 控制电路还包括阻止电流从电流控制电路的第一输出节点流到电流控制电路的第二输出节点的装置。

    Current control circuits
    4.
    发明授权
    Current control circuits 有权
    电流控制电路

    公开(公告)号:US07911260B2

    公开(公告)日:2011-03-22

    申请号:US12364304

    申请日:2009-02-02

    IPC分类号: G05F1/10

    CPC分类号: H03K17/0822

    摘要: Circuit, system and method of current control circuits are disclosed. In one embodiment, a control circuit includes a first MOS transistor and a second MOS transistor. The first source/drains of the first and the second MOS transistors are coupled to an output of a power source. A second source/drain of the first MOS transistor is coupled to a first output node of the current control circuit. A second source/drain of the second MOS transistor is coupled to a second output node of the current control circuit. The control circuit further includes a means to block flow of current from the first output node of the current control circuit to the second output node of the current control circuit.

    摘要翻译: 公开了电流控制电路的电路,系统和方法。 在一个实施例中,控制电路包括第一MOS晶体管和第二MOS晶体管。 第一和第二MOS晶体管的第一源极/漏极耦合到电源的输出端。 第一MOS晶体管的第二源/漏耦合到电流控制电路的第一输出节点。 第二MOS晶体管的第二源/漏耦合到电流控制电路的第二输出节点。 控制电路还包括阻止电流从电流控制电路的第一输出节点流到电流控制电路的第二输出节点的装置。

    Proportional Regulation for Optimized Current Sensor Performance
    5.
    发明申请
    Proportional Regulation for Optimized Current Sensor Performance 有权
    优化电流传感器性能的比例调节

    公开(公告)号:US20100102845A1

    公开(公告)日:2010-04-29

    申请号:US12260829

    申请日:2008-10-29

    IPC分类号: G01R31/26 H03F1/32

    摘要: An integrated circuit device comprises a first transistor having a gate coupled to an output of a first operational amplifier, a second transistor having a threshold voltage proportional to a threshold voltage of the first transistor, the second transistor having a gate coupled to an inverting input of a second operational amplifier, an output of the second operational amplifier coupled to an inverting input of the first operational amplifier, a first resistor coupled between the second transistor gate and the inverting input of the second operational amplifier, and a second resistor coupled between the output of the second operational amplifier and the inverting input of the second operational amplifier, a ratio of the second resistor to the first resistor selected based upon a ratio of a production distribution of a transistor source voltage offset to a production distribution of a transistor threshold voltage mismatch.

    摘要翻译: 集成电路器件包括第一晶体管,其具有耦合到第一运算放大器的输出的栅极,具有与第一晶体管的阈值电压成比例的阈值电压的第二晶体管,第二晶体管具有耦合到第一晶体管的反相输入的栅极 第二运算放大器,耦合到第一运算放大器的反相输入的第二运算放大器的输出,耦合在第二晶体管栅极和第二运算放大器的反相输入端之间的第一电阻器,以及耦合在输出端 所述第二运算放大器和所述第二运算放大器的反相输入端之间的比率,所述第二电阻器与所述第一电阻器的比率是基于晶体管源极电压偏移的产生分布与晶体管阈值电压失配的产生分布的比率而选择的 。

    Adaptive capacitance for transistor
    6.
    发明授权
    Adaptive capacitance for transistor 有权
    晶体管的自适应电容

    公开(公告)号:US07492212B1

    公开(公告)日:2009-02-17

    申请号:US11842684

    申请日:2007-08-21

    IPC分类号: H03K17/687

    摘要: A circuit includes a transistor having a source, drain, a gate, and an electrode structure. A source terminal is coupled to the source. A drain terminal coupled to the drain. Terminals are coupled to the gate and to the electrode structure. A switch is coupled to the source, the gate terminal and the electrode terminal to selectively couple one of the gate and electrode structure to the source. In further embodiments, a second switch is used to selectively couple a resistor between the gate and the source. A method is used to control the switches to keep the transistor in an off state or allow it to switch to an on state.

    摘要翻译: 电路包括具有源极,漏极,栅极和电极结构的晶体管。 源终端耦合到源。 耦合到漏极的漏极端子。 端子耦合到栅极和电极结构。 开关耦合到源极,栅极端子和电极端子,以将栅极和电极结构之一选择性地耦合到源极。 在另外的实施例中,第二开关用于在栅极和源极之间选择性地耦合电阻器。 使用一种方法来控制开关以保持晶体管处于断开状态或允许其切换到导通状态。

    System and Method for Providing a Low-Power Self-Adjusting Reference Current for Floating Supply Stages
    7.
    发明申请
    System and Method for Providing a Low-Power Self-Adjusting Reference Current for Floating Supply Stages 有权
    提供浮动供电阶段的低功耗自调节参考电流的系统和方法

    公开(公告)号:US20090295359A1

    公开(公告)日:2009-12-03

    申请号:US12130070

    申请日:2008-05-30

    申请人: Paolo Del Croce

    发明人: Paolo Del Croce

    IPC分类号: G05F3/08

    CPC分类号: G05F3/02 G05F3/24

    摘要: A system and method for providing an accurate current reference using a low-power current source is disclosed. A preferred embodiment comprises a system comprises a first section and a second section. The first section comprises a first simple current reference, an accurate current reference, and a circuit that generates a digital error signal based upon a comparison of an output of the first simple current reference and an output of the accurate current reference. The second section comprises a second simple current reference providing a second reference current, an adjustment circuit providing an adjustment current based upon the digital error signal, and a circuit biased with current equivalent to a summation of the second reference current and the adjustment current. The first simple current reference and the second simple current reference may be equivalent circuits.

    摘要翻译: 公开了一种使用低功率电流源提供精确电流参考的系统和方法。 优选实施例包括一个包括第一部分和第二部分的系统。 第一部分包括第一简单电流基准,精确电流基准,以及基于第一简单电流基准的输出与精确电流基准的输出的比较来产生数字误差信号的电路。 第二部分包括提供第二参考电流的第二简单电流参考,基于数字误差信号提供调节电流的调节电路和用等于第二参考电流和调整电流的总和的电流偏置的电路。 第一简单电流基准和第二简单电流基准可以是等效电路。

    System and method for providing a low-power self-adjusting reference current for floating supply stages
    8.
    发明授权
    System and method for providing a low-power self-adjusting reference current for floating supply stages 有权
    用于为浮动电源级提供低功率自调节参考电流的系统和方法

    公开(公告)号:US08339176B2

    公开(公告)日:2012-12-25

    申请号:US12130070

    申请日:2008-05-30

    申请人: Paolo Del Croce

    发明人: Paolo Del Croce

    IPC分类号: H03K5/00

    CPC分类号: G05F3/02 G05F3/24

    摘要: A system and method for providing an accurate current reference using a low-power current source is disclosed. A preferred embodiment comprises a system comprises a first section and a second section. The first section comprises a first simple current reference, an accurate current reference, and a circuit that generates a digital error signal based upon a comparison of an output of the first simple current reference and an output of the accurate current reference. The second section comprises a second simple current reference providing a second reference current, an adjustment circuit providing an adjustment current based upon the digital error signal, and a circuit biased with current equivalent to a summation of the second reference current and the adjustment current. The first simple current reference and the second simple current reference may be equivalent circuits.

    摘要翻译: 公开了一种使用低功率电流源提供精确电流参考的系统和方法。 优选实施例包括一个包括第一部分和第二部分的系统。 第一部分包括第一简单电流基准,精确电流基准,以及基于第一简单电流基准的输出与精确电流基准的输出的比较来产生数字误差信号的电路。 第二部分包括提供第二参考电流的第二简单电流参考,基于数字误差信号提供调节电流的调节电路和用等于第二参考电流和调整电流的总和的电流偏置的电路。 第一简单电流基准和第二简单电流基准可以是等效电路。

    Proportional regulation for optimized current sensor performance
    9.
    发明授权
    Proportional regulation for optimized current sensor performance 有权
    比例调节优化电流传感器性能

    公开(公告)号:US07868643B2

    公开(公告)日:2011-01-11

    申请号:US12260829

    申请日:2008-10-29

    IPC分类号: G01R31/26

    摘要: An integrated circuit device comprises a first transistor having a gate coupled to an output of a first operational amplifier, a second transistor having a threshold voltage proportional to a threshold voltage of the first transistor, the second transistor having a gate coupled to an inverting input of a second operational amplifier, an output of the second operational amplifier coupled to an inverting input of the first operational amplifier, a first resistor coupled between the second transistor gate and the inverting input of the second operational amplifier, and a second resistor coupled between the output of the second operational amplifier and the inverting input of the second operational amplifier, a ratio of the second resistor to the first resistor selected based upon a ratio of a production distribution of a transistor source voltage offset to a production distribution of a transistor threshold voltage mismatch.

    摘要翻译: 集成电路器件包括第一晶体管,其具有耦合到第一运算放大器的输出的栅极,具有与第一晶体管的阈值电压成比例的阈值电压的第二晶体管,第二晶体管具有耦合到第一晶体管的反相输入的栅极 第二运算放大器,耦合到第一运算放大器的反相输入的第二运算放大器的输出,耦合在第二晶体管栅极和第二运算放大器的反相输入端之间的第一电阻器,以及耦合在输出端 所述第二运算放大器和所述第二运算放大器的反相输入端之间的比率,所述第二电阻器与所述第一电阻器的比率是基于晶体管源极电压偏移的产生分布与晶体管阈值电压失配的产生分布的比率而选择的 。

    ADAPTIVE CAPACITANCE FOR TRANSISTOR
    10.
    发明申请
    ADAPTIVE CAPACITANCE FOR TRANSISTOR 有权
    用于晶体管的自适应电容

    公开(公告)号:US20090051405A1

    公开(公告)日:2009-02-26

    申请号:US11842684

    申请日:2007-08-21

    IPC分类号: H03K17/16 H01L27/06

    摘要: A circuit includes a transistor having a source, drain, a gate, and an electrode structure. A source terminal is coupled to the source. A drain terminal coupled to the drain. Terminals are coupled to the gate and to the electrode structure. A switch is coupled to the source, the gate terminal and the electrode terminal to selectively couple one of the gate and electrode structure to the source. In further embodiments, a second switch is used to selectively couple a resistor between the gate and the source. A method is used to control the switches to keep the transistor in an off state or allow it to switch to an on state.

    摘要翻译: 电路包括具有源极,漏极,栅极和电极结构的晶体管。 源终端耦合到源。 耦合到漏极的漏极端子。 端子耦合到栅极和电极结构。 开关耦合到源极,栅极端子和电极端子,以将栅极和电极结构中的一个选择性地耦合到源极。 在另外的实施例中,第二开关用于在栅极和源极之间选择性地耦合电阻器。 使用一种方法来控制开关以保持晶体管处于断开状态或允许晶体管切换到导通状态。