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    Illumination optical unit for EUV microlithography
    1.
    发明授权
    Illumination optical unit for EUV microlithography 有权
    用于EUV微光刻的照明光学单元

    公开(公告)号：US08395754B2

    公开(公告)日：2013-03-12

    申请号：US12949478

    申请日：2010-11-18

    申请人： Martin Endres ,  Sebastian Doern ,  Stig Bieling ,  Marc Kirch

    发明人： Martin Endres ,  Sebastian Doern ,  Stig Bieling ,  Marc Kirch

    IPC分类号： G03B27/54 ,  G03B27/68 ,  G03B27/52

    CPC分类号： G03F7/70233 ,  G02B5/09 ,  G03F7/70075 ,  G03F7/70116 ,  G03F7/702

    摘要： An illumination optical unit for EUV microlithography includes a first optical element having a plurality of first reflective facet elements and a second optical element having a plurality of second reflective facet elements. Each first reflective facet element from the plurality of the first reflective facet elements has a respective maximum number of different positions which defines a set—associated with the first facet element—consisting of second reflective facet elements in that the set consists of all second facet elements onto which the first facet element directs radiation in its different positions during the operation of the illumination optical unit. The plurality of second reflective facet element forms a plurality of disjoint groups, wherein each of the groups and each of the sets contain at least two second facet elements, and there are no two second facet elements of a set which belong to the same group. This construction makes it possible to provide an illumination optical unit which can be used to provide a large number of different angle-dependent intensity distributions at the location of the object field.

    摘要翻译： 用于EUV微光刻的照明光学单元包括具有多个第一反射小面元件的第一光学元件和具有多个第二反射小面元件的第二光学元件。 来自多个第一反射小面元件的每个第一反射小平面元件具有相应的最大数目的不同位置，其限定与第一小面元件相关联的组合 - 由第二反射小面元件组成，其中该组由所有第二小面元件 在照明光学单元的操作期间，第一刻面元件将辐射引导到其不同位置。 所述多个第二反射小面元件形成多个不相交组，其中所述组中的每一个和所述组中的每一个包含至少两个第二小面元件，并且不存在属于同一组的组的两个第二小面元素。 这种结构使得可以提供照明光学单元，该照明光学单元可用于在物场的位置处提供大量不同的取决于角度的强度分布。

    ILLUMINATION OPTICAL UNIT FOR EUV MICROLITHOGRAPHY
    2.
    发明申请
    ILLUMINATION OPTICAL UNIT FOR EUV MICROLITHOGRAPHY 有权
    EUV微光学照明光学单元

    公开(公告)号：US20110141445A1

    公开(公告)日：2011-06-16

    申请号：US12949478

    申请日：2010-11-18

    申请人： Martin Endres ,  Sebastian Doern ,  Stig Bieling ,  Marc Kirch

    发明人： Martin Endres ,  Sebastian Doern ,  Stig Bieling ,  Marc Kirch

    IPC分类号： G03B27/54

    CPC分类号： G03F7/70233 ,  G02B5/09 ,  G03F7/70075 ,  G03F7/70116 ,  G03F7/702

    摘要： An illumination optical unit for EUV microlithography includes a first optical element having a plurality of first reflective facet elements and a second optical element having a plurality of second reflective facet elements. Each first reflective facet element from the plurality of the first reflective facet elements has a respective maximum number of different positions which defines a set—associated with the first facet element—consisting of second reflective facet elements in that the set consists of all second facet elements onto which the first facet element directs radiation in its different positions during the operation of the illumination optical unit. The plurality of second reflective facet element forms a plurality of disjoint groups, wherein each of the groups and each of the sets contain at least two second facet elements, and there are no two second facet elements of a set which belong to the same group. This construction makes it possible to provide an illumination optical unit which can be used to provide a large number of different angle-dependent intensity distributions at the location of the object field.

    摘要翻译： 用于EUV微光刻的照明光学单元包括具有多个第一反射小面元件的第一光学元件和具有多个第二反射小面元件的第二光学元件。 来自多个第一反射小面元件的每个第一反射小平面元件具有相应的最大数目的不同位置，其限定与第一小面元件相关联的组合 - 由第二反射小面元件组成，其中该组由所有第二小面元件 在照明光学单元的操作期间，第一刻面元件将辐射引导到其不同位置。 所述多个第二反射小面元件形成多个不相交组，其中所述组中的每一个和所述组中的每一个包含至少两个第二小面元件，并且不存在属于同一组的组的两个第二小面元素。 这种结构使得可以提供照明光学单元，该照明光学单元可用于在物场的位置处提供大量不同的取决于角度的强度分布。

    ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND RELATED SYSTEM AND APPARATUS
    4.
    发明申请
    ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND RELATED SYSTEM AND APPARATUS 有权
    EUV微观照相和相关系统和装置的照明光学

    公开(公告)号：US20110063598A1

    公开(公告)日：2011-03-17

    申请号：US12915785

    申请日：2010-10-29

    申请人： Damian Fiolka ,  Berndt Warm ,  Christian Steigerwald ,  Martin Endres ,  Ralf Stuetzle ,  Jens Ossmann ,  Ralf Scharnweber ,  Markus Hauf ,  Udo Dinger ,  Severin Waldis ,  Marc Kirch ,  Joachim Hartjes

    发明人： Damian Fiolka ,  Berndt Warm ,  Christian Steigerwald ,  Martin Endres ,  Ralf Stuetzle ,  Jens Ossmann ,  Ralf Scharnweber ,  Markus Hauf ,  Udo Dinger ,  Severin Waldis ,  Marc Kirch ,  Joachim Hartjes

    IPC分类号： G03B27/72

    CPC分类号： G03F7/70191 ,  G03F7/70083

    摘要： An illumination optics for EUV microlithography guides an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension and a shorter field dimension, where the ratio is considerably greater than 1. A field facet mirror has a plurality of field facets that set defined illumination conditions in the object field. A following optics downstream of the field facet mirror transmits the illumination light into the object field. The following optics includes a pupil facet mirror with a plurality of pupil facets. The field facets are in each case individually allocated to the pupil facets so that portions of the illumination light bundle impinging upon in each case one of the field facets are guided on to the object field via the associated pupil facet. The field facet mirror not only includes a plurality of basic illumination field facets which provide a basic illumination of the object field via associated basic illumination pupil facets, but also includes a plurality of correction illumination field facets which provide for a correction of the illumination of the object field via associated correction illumination pupil facets. The result is an illumination optics which allows unwanted variations of illumination parameters, for instance an illumination intensity distribution or an illumination angle distribution, to be corrected across the object field.

    摘要翻译： 用于EUV微光刻的照明光学器件将照射光束从辐射源引导到物场，其具有在较大场尺寸和较短场尺寸之间的延伸比，其中该比率远大于1.场分面镜具有多个 的场面在场景中设置定义的照明条件。 在场面反射镜下游的以下光学器件将照明光透射到物体场中。 以下光学器件包括具有多个光瞳面的光瞳小面镜。 场分面在每种情况下分别被分配给光瞳面，使得在各种情况下照射的照明光束的一部分通过相关联的光瞳小面被引导到物场。 场面镜不仅包括多个基本照明场面，它们通过相关联的基本照明光瞳面提供物场的基本照明，而且还包括多个校正照明场面，其提供对照射的照明的校正 通过相关联的校正照明光瞳面进行物体场。 结果是照明光学元件允许在整个对象场校正照明参数的不期望的变化，例如照明强度分布或照明角度分布。

    OPTICAL ELEMENT HAVING A PLURALITY OF REFLECTIVE FACET ELEMENTS
    5.
    发明申请
    OPTICAL ELEMENT HAVING A PLURALITY OF REFLECTIVE FACET ELEMENTS 有权
    具有多重反射面元素的光学元件

    公开(公告)号：US20120293785A1

    公开(公告)日：2012-11-22

    申请号：US13486073

    申请日：2012-06-01

    申请人： Marc Kirch ,  Martin Endres ,  Damian Fiolka ,  Joachim Hartjes

    发明人： Marc Kirch ,  Martin Endres ,  Damian Fiolka ,  Joachim Hartjes

    IPC分类号： G03B27/72

    CPC分类号： G02B26/0816 ,  G02B5/0891 ,  G02B5/09 ,  G02B7/1822 ,  G02B27/0927 ,  G02B27/0977 ,  G03F7/70075 ,  G03F7/70116

    摘要： An optical element for use in an illumination optical unit of an EUV microlithography projection exposure apparatus includes a plurality of reflective facet elements. Each reflective facet element has at least one reflective surface. In this case, at least one facet element is arranged in a manner rotatable about a rotation axis. The rotation axis intersects the at least one reflective surface of the facet element. With such an optical element, it is possible to alter the direction and/or the intensity of at least part of the illumination radiation within the illumination optical unit in a simple manner.

    摘要翻译： 用于EUV微光刻投影曝光装置的照明光学单元的光学元件包括多个反射小面元件。 每个反射小面元件具有至少一个反射表面。 在这种情况下，以围绕旋转轴线旋转的方式布置至少一个小面元件。 旋转轴与小面元件的至少一个反射表面相交。 利用这种光学元件，可以以简单的方式改变照明光学单元内的照明辐射的至少一部分的方向和/或强度。

    Illumination system for EUV microlithography
    7.
    发明授权
    Illumination system for EUV microlithography 有权
    EUV微光刻照明系统

    公开(公告)号：US09304400B2

    公开(公告)日：2016-04-05

    申请号：US13038453

    申请日：2011-03-02

    申请人： Michael Layh ,  Ralf Stuetzle ,  Damian Fiolka ,  Martin Endres ,  Holger Weigand

    发明人： Michael Layh ,  Ralf Stuetzle ,  Damian Fiolka ,  Martin Endres ,  Holger Weigand

    IPC分类号： G03B27/54 ,  G03F7/20 ,  G02B17/06 ,  G02B27/00

    CPC分类号： G03F7/70083 ,  G02B17/0605 ,  G02B17/0647 ,  G02B27/0043 ,  G03F7/70033 ,  G03F7/70075

    摘要： An illumination system for EUV microlithography includes an EUV light source which generates EUV illumination light with an etendue that is higher than 0.01 mm2. The EUV light source generates a sequence of EUV light pulses having a pulse sequence frequency. An illumination optics of the illumination system is used to guide the illumination light from the light source to an object field. At least one optical modulation component of the illumination system is preferably modulatable synchronously with the pulse sequence frequency. The result is an illumination system where a homogeneity of an object field illumination is improved.

    摘要翻译： 用于EUV微光刻的照明系统包括产生具有高于0.01mm 2的光密度的EUV照明光的EUV光源。 EUV光源产生具有脉冲序列频率的EUV光脉冲序列。 照明系统的照明光学器件用于将来自光源的照明光引导到物场。 照明系统的至少一个光调制部件优选地可以与脉冲序列频率同步地进行调制。 其结果是改善了物场照明的均匀性的照明系统。

    Field facet mirror for an illumination optics of a projection exposure apparatus for EUV microlithography
    8.
    发明授权
    Field facet mirror for an illumination optics of a projection exposure apparatus for EUV microlithography 有权
    用于EUV微光刻的投影曝光装置的照明光学元件的场面反射镜

    公开(公告)号：US08717541B2

    公开(公告)日：2014-05-06

    申请号：US13034275

    申请日：2011-02-24

    申请人： Adrian Staicu ,  Martin Endres

    发明人： Adrian Staicu ,  Martin Endres

    IPC分类号： G03B27/54 ,  G03B27/42

    CPC分类号： G03F7/702 ,  G02B5/0875 ,  G02B5/0891 ,  G02B5/09 ,  G02B19/0023 ,  G02B19/0047 ,  G02B19/0095 ,  G03F7/70075 ,  G03F7/70083 ,  G03F7/70108 ,  Y10T29/49826

    摘要： A field facet mirror for an illumination optics of a projection exposure apparatus for EUV microlithography transmits a structure of an object arranged in an object field into an image field. The field facet mirror has a plurality of field facets with reflection surfaces. The arrangement of the field facets next to one another spans a base plane. Projections of the reflection surfaces of at least two of the field facets onto the base plane differ with respect to at least one of the following parameters: size, shape, orientation. A field facet mirror results which can ensure a uniform object field illumination with a simultaneously high EUV throughput.

    摘要翻译： 用于EUV微光刻的投影曝光装置的照明光学器件的场面反射镜将布置在物场中的物体的结构传输到图像场中。 场面反射镜具有多个具有反射面的场面。 彼此相邻的场面的排列跨越基面。 至少两个场面的反射面在基面上的投影相对于以下参数中的至少一个而不同：尺寸，形状，取向。 可以确保具有同时高的EUV吞吐量的均匀物体场照明的场分面镜。

    ILLUMINATING OPTICAL UNIT AND PROJECTION EXPOSURE APPARATUS FOR MICROLITHOGRAPHY
    9.
    发明申请
    ILLUMINATING OPTICAL UNIT AND PROJECTION EXPOSURE APPARATUS FOR MICROLITHOGRAPHY 审中-公开
    照明光学单元和投影曝光装置

    公开(公告)号：US20090251677A1

    公开(公告)日：2009-10-08

    申请号：US12473137

    申请日：2009-05-27

    申请人： Martin Endres ,  Jens Ossmann ,  Ralf Stuetzle

    发明人： Martin Endres ,  Jens Ossmann ,  Ralf Stuetzle

    IPC分类号： G03B27/72

    CPC分类号： G03F7/70191 ,  G02B27/0905 ,  G02B27/0977

    摘要： A projection exposure apparatus for microlithography has an illumination system with an EUV light source and an illumination optical unit to expose an object field in an object plane. A projection optical unit images the object field into an image field in an image plane. A pupil facet mirror in a plane of the illumination optical unit that coincides with a pupil plane of the projection optical unit or that is optically conjugate with respect thereto has a plurality of individual facets on which illumination light can impinge. A correction diaphragm is in or adjacent to a pupil plane of the projection optical unit or in a conjugate plane with respect thereto. The correction diaphragm screens the illumination of the entrance pupil of the projection optical unit so that at least some source images assigned to the individual facets of the pupil facet mirror in the entrance pupil of the projection optical unit are partly shaded by one and the same diaphragm edge. The form of the diaphragm edge is predefined for the partial shading of the source images assigned to the pupil facets in the entrance pupil of the projection optical unit for the correction of the telecentricity and the ellipticity of the illumination.

    摘要翻译： 用于微光刻的投影曝光装置具有带有EUV光源和照明光学单元的照明系统，以暴露物平面内的物场。 投影光学单元将对象场成像到图像平面中的图像场。 在照明光学单元的平面中与投影光学单元的光瞳面重合或与其相结合的瞳孔面反射镜具有多个照明光可以照射的各个面。 校正光阑在投影光学单元的光瞳平面内或与其相邻的共轭平面中。 校正光阑筛选投影光学单元的入射光瞳的照明，使得分配给投影光学单元的入射光瞳中的瞳孔面反射镜的各个面的至少一些源图像被同一个膜片部分地遮蔽 边缘。 对于用于校正远心度和照明椭圆率的投影光学单元的入射光瞳中分配给瞳孔面的源图像的部分阴影，预定了光阑边缘的形式。

    EUV illumination system
    10.
    发明授权
    EUV illumination system 有权
    EUV照明系统

    公开(公告)号：US07586113B2

    公开(公告)日：2009-09-08

    申请号：US11755334

    申请日：2007-05-30

    申请人： Martin Endres ,  Jens Ossmann

    发明人： Martin Endres ,  Jens Ossmann

    IPC分类号： A61N5/00 ,  G21G5/00

    CPC分类号： G02B17/0892 ,  G02B17/0804 ,  G02B17/082 ,  G02B17/0836 ,  G03F7/702

    摘要： An illumination system is used to illuminate a specified illumination field of an object surface with EUV radiation. The illumination system has an EUV source and a collector to concentrate the EUV radiation in the direction of an optical axis. A first optical element is provided to generate secondary light sources, and a second optical element is provided at the location of these secondary light sources, the second optical element being part of an optical device which includes further optical elements, and which images the first optical element into an image plane into the illumination field. Between the collector and the illumination field, a maximum of five reflecting optical elements are arranged. These optical elements reflect the main beam either grazingly or steeply. The optical axis, projected onto an illumination main plane, is deflected by more than 30° between a source axis portion and a field axis portion. In a first variant of the illumination system, at least an axis portion between at least two of the reflecting optical elements is inclined relative to the illumination main plane. In a second variant of the illumination system, the optical device, in addition to the second optical element includes precisely three further optical elements, i.e. a third optical element, a fourth optical element and a fifth optical element. In this second variant, the optical axis meets the third, fourth and fifth optical elements at an angle of incidence which is greater than 70°. This construction variants make possible either an increase of the EUV throughput of the illumination system for a given size, or a reduction of the size of the illumination system and thus of the associated projection exposure system for a given EUV throughput.

    摘要翻译： 照明系统用于用EUV辐射照射物体表面的指定照明场。 照明系统具有EUV源和收集器以将EUV辐射集中在光轴的方向上。 提供第一光学元件以产生二次光源，并且在这些次级光源的位置处提供第二光学元件，第二光学元件是包括另外的光学元件的光学器件的一部分，并且其将第一光学元件 元素进入图像平面进入照明场。 在收集器和照明场之间，最多设置五个反射光学元件。 这些光学元件既可以粗略地或者陡峭地反射主光束。 投射到照明主平面上的光轴在源轴部分和场轴部分之间偏转大于30°。 在照明系统的第一变型中，至少两个反射光学元件之间的至少一个轴部分相对于照明主平面倾斜。 在照明系统的第二变型中，除了第二光学元件之外，光学器件精确地包括三个另外的光学元件，即第三光学元件，第四光学元件和第五光学元件。 在该第二变型中，光轴以大于70°的入射角与第三，第四和第五光学元件相遇。 这种构造变型使给定尺寸的照明系统的EUV吞吐量增加，或者对于给定的EUV吞吐量，照明系统的大小以及相关联的投影曝光系统的减小成为可能。