SYNTHETIC QUARTZ GLASS WITH FAST AXES OF BIREFRINGENCE DISTRIBUTED IN CONCENTRIC-CIRCLE TANGENT DIRECTIONS AND PROCESS FOR PRODUCING THE SAME

    公开(公告)号:US20080292882A1

    公开(公告)日:2008-11-27

    申请号:US12182361

    申请日:2008-07-30

    IPC分类号: C03C12/00 C03B37/005

    摘要: The present invention provides a synthetic quartz glass having a diameter of 100 mm or more for using in an optical apparatus comprising a light source emitting a light having a wavelength of 250 nm or less, the synthetic quartz glass having, in a region located inward from the periphery thereof by 10 mm or more in a plane perpendicular to the optical axis of the synthetic quartz glass: a birefringence of 0.5 nm or less per thickness of 1 cm with respect to a light having a wavelength of 193 nm; an OH group concentration of 60 ppm or less; an averaged differential OH group concentration from the center of the synthetic quartz glass toward a peripheral direction thereof, normalized with respect to the radius of the synthetic quartz glass, of −8 to +60 ppm; and an unbiased standard deviation a of a differential OH group concentration from the center of the synthetic quartz glass toward a peripheral direction thereof, normalized with respect to the radius of the synthetic quartz glass, of 10 ppm or less, the unbiased standard deviation a being determined with the following formula (1): σ = ∑ i = 1 n  ( X i - X _ ) 2 n - 1   providing  ;   X i = Δ   n _ OH   i Δ   r i * = n _ OH   i - n _ OH   i + 1  r i * -  r i + 1 * ( 1 ) : differential OH group concentration at measurement point i normalized with respect to the radius R of the synthetic quartz glass; n _ OH   i = n OH   i - 1 + n OH   i + n OH   i + 1 3 : OH group concentration at measurement point i in terms of moving average for three points including the two points before and after the measurement point i;  r i * = r i R : radius at measurement point i normarized with respect to the radius R of the synthetic quartz glass; X : average of OH group concentrations Xi in the whole evaluation region; and n : number of measurement points in the evaluation region (integer of 2 or more).

    SYNTHETIC QUARTZ GLASS WITH RADIAL DISTRIBUTION OF FAST AXES OF BIREFRINGENCE AND PROCESS FOR PRODUCING THE SAME

    公开(公告)号:US20080292881A1

    公开(公告)日:2008-11-27

    申请号:US12182327

    申请日:2008-07-30

    IPC分类号: C03C3/06 C03B37/00

    摘要: The present invention provides a synthetic quartz glass having a diameter of 100 mm or more for using in an optical apparatus comprising a light source emitting a light having a wavelength of 250 nm or less, the synthetic quartz glass having, in a region located inward from the periphery thereof by 10 mm or more in a plane perpendicular to the optical axis of the synthetic quartz glass: a birefringence of 0.5 nm or less per thickness of 1 cm with respect to a light having a wavelength of 193 nm; an OH group concentration of 60 ppm or less; an averaged differential OH group concentration from the center of the synthetic quartz glass toward a peripheral direction thereof, normalized with respect to the radius of the synthetic quartz glass, of not less than −60 ppm and less than −8 ppm; and an unbiased standard deviation σ of a differential OH group concentration from the center of the synthetic quartz glass toward a peripheral direction thereof, normalized with respect to the radius of the synthetic quartz glass, of 10 ppm or less, the unbiased standard deviation σ being determined with the following formula (1): σ = ∑ i = 1 n  ( X i - X _ ) 2 n - 1   providing ;   X i = Δ   n _ OHi Δ   r i * = n _ OHi - n _ OHi + 1 r i * - r i + 1 * : ( 1 ) differential OH group concentration at measurement point i normalized with respect to the radius R of the synthetic quartz glass; n _ OHi = n OHi - 1 + n OHi + n OHi + 1 3 : OH group concentration at measurement point i in terms of moving average for three points including the two points before and after the measurement point i; r i * = r i R : radius at measurement point i normarized with respect to the radius R of the synthetic quartz glass; X: average of OH group concentrations Xi in the whole evaluation region; and n: number of measurement points in the evaluation region (integer of 2 or more).

    SYNTHESIZED SILICA GLASS FOR OPTICAL COMPONENT
    3.
    发明申请
    SYNTHESIZED SILICA GLASS FOR OPTICAL COMPONENT 有权
    用于光学组件的合成二氧化硅玻璃

    公开(公告)号:US20120182622A1

    公开(公告)日:2012-07-19

    申请号:US13367780

    申请日:2012-02-07

    IPC分类号: G02B27/12 C03B25/00 B82Y20/00

    摘要: The present invention provides a synthetic silica glass for an optical member in which not only a fast axis direction in an optical axis direction is controlled, and a birefringence in an off-axis direction is reduced, but a magnitude of a birefringence in the optical axis direction is controlled to an arbitrary value, such that an average value of a value BR cos 2θxy defined from a birefringence BR and a fast axis direction θxy as measured from a parallel direction to the principal optical axis direction is defined as an average birefringence AveBR cos 2θxy, and when a maximum value of a birefringence measured from a vertical direction to the principal optical axis direction of the optical member is defined as a maximum birefringence BRmax in an off-axis direction, the following expression (1-1) and expression (2-1) are established: −1.0≦AveBR cos 2θxy

    摘要翻译: 本发明提供一种用于光学构件的合成石英玻璃,其不仅控制光轴方向上的快轴方向,并且减少偏轴双折射,而且在光轴上具有双折射的大小 方向被控制为任意值,使得从平行方向到主光轴方向测量的从双折射BR和快轴方向&yt; xy定义的值BR cos 2&amp; t s; xy的平均值被定义为 平均双折射度AveBR cos 2&amp; t s; xy,并且当从垂直方向测量到光学构件的主光轴方向的双折射的最大值被定义为在偏轴方向上的最大双折射率BRmax时,以下表达式(1 -1)和表达式(2-1):-1.0&nlE; AveBR cos 2&thetas; xy <0.0(1-1)0.0&nlE; BRmax&nlE; 1.0(2-1)。

    ANTENNA APPARATUS
    5.
    发明申请
    ANTENNA APPARATUS 审中-公开
    天线装置

    公开(公告)号:US20120154245A1

    公开(公告)日:2012-06-21

    申请号:US13404039

    申请日:2012-02-24

    IPC分类号: H01Q1/50 H01Q23/00

    摘要: This disclosure provides an antenna apparatus in which stable antenna characteristics are maintained by detecting surrounding conditions that affect the antenna characteristics and appropriately compensating the antenna characteristics. More specifically, when surrounding condition such as a human body (e.g., a palm or fingers) approaches and enters an electric field of a pseudo dipole formed by an antenna element electrode, a stray capacitance is sensed and stable antenna characteristics are maintained by appropriately controlling an antenna matching circuit to compensate for a change in the antenna characteristics due to the approach of the surrounding condition.

    摘要翻译: 本公开提供了一种天线装置,其中通过检测影响天线特性并适当地补偿天线特性的周围条件来维持稳定的天线特性。 更具体地说,当诸如人体(例如,手掌或手指)的周围环境接近并进入由天线元件电极形成的伪偶极子的电场时,感测杂散电容并且通过适当地控制来保持稳定的天线特性 天线匹配电路,用于补偿由于周围环境的接近造成的天线特性的变化。

    NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT EXCELLENT IN CHARGE RETENTION PROPERTIES AND PROCESS FOR PRODUCING THE SAME
    6.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT EXCELLENT IN CHARGE RETENTION PROPERTIES AND PROCESS FOR PRODUCING THE SAME 有权
    非挥发性半导体存储元件在充电保持性方面的优异性及其制造方法

    公开(公告)号:US20080171411A1

    公开(公告)日:2008-07-17

    申请号:US12046763

    申请日:2008-03-12

    IPC分类号: H01L21/8234 H01L21/336

    摘要: A nonvolatile semiconductor memory element enabling to improve insulation performance of an insulator around a floating gate and to decrease the ratio of oxidized metal ultrafine particles in the floating gate, are provided.In a process for producing nonvolatile semiconductor memory element comprising a floating gate made of a hardly oxidizable material having a Gibbs' formation free energy for forming its oxide higher than that of Si in a range of from 0° C. to 1,200° C., and an insulator made of an oxide of an easily oxidizable material surrounding the floating gate and having such an energy equivalent or lower than that of Si, the floating gate made of hardly oxidizable material is formed by using a physical forming method, the oxide of the easily oxidizable material is formed by using a physical forming method or a chemical forming method, and after a gate insulation film is formed, a heat treatment is carried out in a mixed atmosphere of an oxidizing gas and a reducing gas in a temperature range of from 0° C. to 1,200° C. while the mixture ratio of the mixed gas and the temperature are controlled so that only the hardly oxidizable material is reduced and only the oxide of the easily oxidizable material is oxidized.

    摘要翻译: 提供一种非易失性半导体存储元件,其能够提高浮动栅极周围的绝缘体的绝缘性能并降低浮栅中的氧化金属超微粒子的比例。 在制造非易失性半导体存储元件的方法中,所述非易失性半导体存储元件包括由几何可氧化材料制成的浮栅,所述浮栅具有Gibbs'形成自由能,用于在0℃至1200℃的范围内形成高于Si的氧化物, 以及由易于氧化的材料的氧化物构成的绝缘体,该氧化物围绕浮动栅极并且具有等于或低于Si的能量,由几何可氧化材料制成的浮栅是通过使用物理成形法形成的, 通过使用物理形成方法或化学成型方法形成易氧化材料,在形成栅极绝缘膜之后,在氧化气体和还原气体的混合气氛中,在 0℃至1200℃,同时控制混合气体和温度的混合比,使得只有几乎不可氧化的材料被还原,并且只有易氧化的氧化物 太阳能被氧化。