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    Organic Semiconductor Film, Electron Device Using the Same and Manufacturing Method Therefor
    1.
    发明申请
    Organic Semiconductor Film, Electron Device Using the Same and Manufacturing Method Therefor 审中-公开
    有机半导体膜，使用其的电子器件及其制造方法

    公开(公告)号：US20080217604A1

    公开(公告)日：2008-09-11

    申请号：US10568934

    申请日：2004-08-25

    申请人： Masaaki Yokoyama ,  Takanori Nakano ,  Kazuo Nishimura ,  Masaichirou Tatekawa ,  Atsushi Sogami ,  Tetsurou Nakamura

    发明人： Masaaki Yokoyama ,  Takanori Nakano ,  Kazuo Nishimura ,  Masaichirou Tatekawa ,  Atsushi Sogami ,  Tetsurou Nakamura

    IPC分类号： H01L51/00 ,  H01L51/40

    CPC分类号： H01L51/0036 ,  H01L51/0012 ,  H01L51/0545

    摘要： An organic semiconductor film that can be used for an electron device, for example, particularly can be used for organic TFTs so as to allow the TFTs to have advanced performance, is provided and a manufacturing method therefor is provided. For instance, the organic semiconductor film contains the organic conductive high polymer compound such as polythiophene represented by the below formula (I). The organic semiconductor film is formed by forming a solution in a thin film form, the solution showing two or more spectral peaks (spectral state B) in a wavelength region of 300 to 800 nm by measurement using a visible and ultraviolet absorption spectral method; and drying the solution formed in the thin film form. Alternatively, the organic semiconductor film can be formed by the method in which the organic conductive high polymer compound has a molecular weight distribution range Mw/Mn from 1.00 to 1.85, obtained by dividing a weight-average molecular weight Mw by a number-average molecular weight Mn. With these methods, principal chains of the organic conductive high polymer compound molecules are arranged substantially in parallel, thus enhancing carrier mobility.

    摘要翻译： 可以使用可用于电子器件的有机半导体膜，特别是可以用于有机TFT，以便允许TFT具有先进的性能，并提供其制造方法。 例如，有机半导体膜含有由下式（I）表示的聚噻吩等有机导电性高分子化合物。 通过使用可见光和紫外吸收光谱法测量，通过形成薄膜形式的溶液形成有机半导体膜，所述溶液在300至800nm的波长范围内显示两个或更多个光谱峰（光谱状态B）; 并干燥形成薄膜形式的溶液。 或者，有机半导体膜可以通过以下方法形成：其中有机导电性高分子化合物的分子量分布范围为1.00〜1.85的Mw / Mn，通过将重均分子量Mw除以数均分子量 重量Mn。 通过这些方法，有机导电性高分子化合物分子的主链基本上平行布置，从而提高载流子迁移率。

    Manufacturing method of composite sheet material using ultrafast laser pulses
    3.
    发明授权
    Manufacturing method of composite sheet material using ultrafast laser pulses 有权

    公开(公告)号：US07122489B2

    公开(公告)日：2006-10-17

    申请号：US10844608

    申请日：2004-05-12

    申请人： Chen-Hsiung Cheng ,  Xinbing Liu ,  Atsushi Sogami ,  Kazuo Nishimura

    发明人： Chen-Hsiung Cheng ,  Xinbing Liu ,  Atsushi Sogami ,  Kazuo Nishimura

    IPC分类号： H01L21/00

    CPC分类号： H01L51/0017 ,  H01L51/0009 ,  H01L51/56 ,  Y10S438/94

    摘要： A patterned, multi-layered thin film structure is patterned using ultra-fast lasers and absorption spectroscopy without damaging underlying layers of the layered structure. The structure is made by selecting ablatable layers based on their thermal, strength and absorption spectra and by using an ultra-fast laser programmed with the appropriate wavelength (λ), pulse width (τ), spectral width (Δλ), spot size, bite size and fluence. The end structure may have features (such as vias, insulating areas, or inkjet printed areas) patterned in the last (top) layer applied or at deeper layers within the layered structure, and can be used as components of organic light emitting didoes (OLEDs) and organic thin film transistors (OTFTs). The method of the present invention includes determining the product's specifications, providing a substrate, selecting a layer, applying the layer, patterning the layer and determining if more layers need to be added to the multi-layered thin film structure.

    Manufacturing method of composite sheet material using ultrafast laser pulses
    4.
    发明申请
    Manufacturing method of composite sheet material using ultrafast laser pulses 审中-公开
    使用超快激光脉冲的复合片材的制造方法

    公开(公告)号：US20060267211A1

    公开(公告)日：2006-11-30

    申请号：US11501542

    申请日：2006-08-09

    申请人： Chen-Hsiung Cheng ,  Xinbing Liu ,  Atsushi Sogami ,  Kazuo Nishimura

    发明人： Chen-Hsiung Cheng ,  Xinbing Liu ,  Atsushi Sogami ,  Kazuo Nishimura

    IPC分类号： H01L23/48

    CPC分类号： H01L51/0017 ,  H01L51/0009 ,  H01L51/56 ,  Y10S438/94

    摘要： A patterned, multi-layered thin film structure is patterned using ultra-fast lasers and absorption spectroscopy without damaging underlying layers of the layered structure. The structure is made by selecting ablatable layers based on their thermal, strength and absorption spectra and by using an ultra-fast laser programmed with the appropriate wavelength (λ), pulse width (τ), spectral width (Δλ), spot size, bite size and fluence. The end structure may have features (such as vias, insulating areas, or inkjet printed areas) patterned in the last (top) layer applied or at deeper layers within the layered structure, and can be used as components of organic light emitting didoes (OLEDs) and organic thin film transistors (OTFTs). The method of the present invention includes determining the product's specifications, providing a substrate, selecting a layer, applying the layer, patterning the layer and determining if more layers need to be added to the multi-layered thin film structure.

    摘要翻译： 使用超快速激光和吸收光谱对图案化的多层薄膜结构进行图案化，而不会损坏层状结构的下层。 该结构通过基于它们的热，强度和吸收光谱选择可烧蚀层并通过使用用适当波长（λ），脉冲宽度（τ），光谱宽度（Deltalambda），斑点大小，咬合而编程的超快激光 大小和注量。 端部结构可以具有在分层结构中施加的最后（顶部）层中或更深层上图案化的特征（例如通孔，绝缘区域或喷墨印刷区域），并且可以用作有机发光二极管（OLED） ）和有机薄膜晶体管（OTFT）。 本发明的方法包括确定产品的规格，提供衬底，选择一层，施加该层，图案化层，以及确定是否需要将更多的层加入多层薄膜结构中。

    Manufacturing method of composite sheet material using ultrafast laser pulses
    5.
    发明申请
    Manufacturing method of composite sheet material using ultrafast laser pulses 有权
    使用超快激光脉冲的复合片材的制造方法

    公开(公告)号：US20050255715A1

    公开(公告)日：2005-11-17

    申请号：US10844608

    申请日：2004-05-12

    申请人： Chen-Hsiung Cheng ,  Xinbing Liu ,  Atsushi Sogami ,  Kazuo Nishimura

    发明人： Chen-Hsiung Cheng ,  Xinbing Liu ,  Atsushi Sogami ,  Kazuo Nishimura

    IPC分类号： H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L51/00 ,  H01L51/56

    CPC分类号： H01L51/0017 ,  H01L51/0009 ,  H01L51/56 ,  Y10S438/94

    摘要： A patterned, multi-layered thin film structure is patterned using ultra-fast lasers and absorption spectroscopy without damaging underlying layers of the layered structure. The structure is made by selecting ablatable layers based on their thermal, strength and absorption spectra and by using an ultra-fast laser programmed with the appropriate wavelength (λ), pulse width (τ), spectral width (Δλ), spot size, bite size and fluence. The end structure may have features (such as vias, insulating areas, or inkjet printed areas) patterned in the last (top) layer applied or at deeper layers within the layered structure, and can be used as components of organic light emitting didoes (OLEDs) and organic thin film transistors (OTFTs). The method of the present invention includes determining the product's specifications, providing a substrate, selecting a layer, applying the layer, patterning the layer and determining if more layers need to be added to the multi-layered thin film structure.

    摘要翻译： 使用超快速激光和吸收光谱对图案化的多层薄膜结构进行图案化，而不会损坏层状结构的下层。 该结构通过基于它们的热，强度和吸收光谱选择可烧蚀层并通过使用用适当波长（λ），脉冲宽度（τ），光谱宽度（Deltalambda），斑点大小，咬合而编程的超快激光 大小和注量。 端部结构可以具有在分层结构中施加的最后（顶部）层中或更深层上图案化的特征（例如通孔，绝缘区域或喷墨印刷区域），并且可以用作有机发光二极管（OLED） ）和有机薄膜晶体管（OTFT）。 本发明的方法包括确定产品的规格，提供衬底，选择一层，施加该层，图案化层，以及确定是否需要将更多的层加入多层薄膜结构中。