公开(公告)号：US20180066762A1

公开(公告)日：2018-03-08

申请号：US15641068

申请日：2017-07-03

申请人： Microjet Technology Co., Ltd.

发明人： Yung-Lung Han ,  Chi-Feng Huang

IPC分类号： F16K31/00 ,  F16K31/02 ,  H01L41/04

CPC分类号： F16K31/004 ,  B41J2/1623 ,  B41J2/17596 ,  F04B43/0054 ,  F04B43/04 ,  F04B43/046 ,  F04B45/04 ,  F04B45/047 ,  F04B53/22 ,  F16K31/00 ,  F16K31/02 ,  H01L41/00 ,  H01L41/04

摘要： A fluid control device includes a piezoelectric actuator and a deformable substrate. The piezoelectric actuator includes a piezoelectric element and a vibration plate. The piezoelectric element is attached on a surface of the vibration plate. The piezoelectric element is subjected to deformation in response to an applied voltage. The vibration plate is subjected to a curvy vibration in response to the deformation of the piezoelectric element. The deformable substrate includes a flexible plate and a communication plate, which are stacked on each other. Consequently, a synchronously-deformed structure is defined by the flexible plate and the communication plate collaboratively. There is a specified depth between the flexible plate and the vibration plate. The flexible plate includes a movable part corresponding to the vibration plate.

公开(公告)号：US20170359026A1

公开(公告)日：2017-12-14

申请号：US15581908

申请日：2017-04-28

申请人： FUJITSU LIMITED

发明人： Masakazu Kishi ,  Hajime Kubota ,  Masayuki ITOH ,  YOSHINORI MESAKI

IPC分类号： H03B5/32

CPC分类号： H03B5/32 ,  H01L41/04 ,  H01L41/09 ,  H03B5/364 ,  H03B2200/0018 ,  H03B2200/0034 ,  H03B2200/0046 ,  H03B2200/0066 ,  H03H9/19

摘要： A crystal oscillator device is disclosed. The crystal oscillator device includes a crystal piece provided in a casing; a pair of excitation electrodes provided for the crystal piece; a coil provided on the crystal piece; a magnetic flux generating member configured to generate magnetic flux passing through the coil; and an alarm generator configured to generate an alarm based on a signal whose amplitude is equal to or less than a reference value, the signal being generated in the coil.

公开(公告)号：US09762202B2

公开(公告)日：2017-09-12

申请号：US14177571

申请日：2014-02-11

申请人： Analog Devices, Inc.

发明人： Florian Thalmayr ,  Jan H. Kuypers ,  Klaus Juergen Schoepf

IPC分类号： H04R31/00 ,  H03H9/02 ,  H03H9/24 ,  H01L41/253 ,  H01L41/27 ,  G01P15/09 ,  G01P15/097 ,  H01F3/04 ,  H01L41/04

CPC分类号： H03H9/02102 ,  G01P15/0922 ,  G01P15/097 ,  H01F3/04 ,  H01L41/04 ,  H01L41/253 ,  H01L41/27 ,  H03H9/02228 ,  H03H9/02244 ,  H03H9/02275 ,  H03H9/02535 ,  H03H9/02574 ,  H03H9/02834 ,  H03H9/02984 ,  H03H9/02992 ,  H03H9/2405 ,  H03H2009/241 ,  H04R31/00 ,  H04R2201/003 ,  H04R2217/00 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908

摘要： Methods are described for constructing a mechanical resonating structure by applying an active layer on a surface of a compensating structure. The compensating structure comprises one or more materials having an adaptive resistance to deform that reduces a variance in a resonating frequency of the mechanical resonating structure, wherein at least the active layer and the compensating structure form a mechanical resonating structure having a plurality of layers of materials A thickness of each of the plurality of layers of materials results in a plurality of thickness ratios therebetween.

公开(公告)号：US20170253039A1

公开(公告)日：2017-09-07

申请号：US15443268

申请日：2017-02-27

申请人： Seiko Epson Corporation

发明人： Satoshi KIMURA ,  Hitoshi MATSUMOTO

IPC分类号： B41J2/14 ,  H01L41/083 ,  H01L41/04

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2002/14241 ,  H01L41/04 ,  H01L41/083

摘要： A piezoelectric device includes a piezoelectric layer, a first moisture resistant layer, and a second moisture resistant layer stacked in this order. The first moisture resistant layer has a flexibility higher than that of the second moisture resistant layer, and the second moisture resistant layer has a moisture permeability lower than that of the first moisture resistant layer.

公开(公告)号：US09634153B2

公开(公告)日：2017-04-25

申请号：US14399279

申请日：2013-04-30

申请人： POSTECH ACADEMY-INDUSTRY FOUNDATION

发明人： Won Kyu Moon ,  James Edward West ,  Min Sung ,  Yub Je ,  Kum Jae Shin

IPC分类号： H01L29/84 ,  B81B3/00 ,  G01P15/08 ,  G01L9/00 ,  H04R23/00 ,  H01L41/04 ,  H01L41/113

CPC分类号： H01L29/84 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2201/0264 ,  G01L9/0072 ,  G01L9/008 ,  G01P15/08 ,  H01L41/04 ,  H01L41/1132 ,  H04R23/006 ,  H04R2201/003

摘要： The present invention relates to a sensor that uses a sensing mechanism having a combined static charge and a field effect transistor, the sensor including: a substrate; source and drain units formed on the substrate and separated from each other; a channel unit interposed between the source and drain units; a membrane separated from the channel unit, disposed on a top portion and displaced in response to an external signal; and a static charge member formed on a bottom surface of the membrane separately from the channel unit and generating an electric field. Accordingly, since the sensor using a sensing mechanism having a combined static charge and a field effect transistor according to an embodiment of the present invention can measure the displacement or movement of the sensor by measuring a change of the electric field of the channel unit of the field effect transistor by using a static member, the electric field can be formed so as to be proportional to an amount of charge and inversely proportional to a squared distance regardless of the intensity and distribution of an external electric field. Therefore, sensitivity is improved without being affected by an external electric field.

公开(公告)号：US09553560B2

公开(公告)日：2017-01-24

申请号：US14508458

申请日：2014-10-07

申请人： PIEDEK TECHNICAL LABORATORY

发明人： Hirofumi Kawashima

IPC分类号： H03H9/215 ,  H03B5/32 ,  H03H9/21 ,  H03H3/02 ,  H03H9/05 ,  H03H9/10 ,  H04R17/00 ,  H04R31/00 ,  H01L41/22 ,  H01L41/04 ,  H03H3/04

CPC分类号： H03H9/21 ,  H01L41/04 ,  H01L41/22 ,  H03B5/32 ,  H03H3/02 ,  H03H9/0547 ,  H03H9/1021 ,  H03H9/215 ,  H03H2003/026 ,  H03H2003/0492 ,  H04R17/00 ,  H04R31/00 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49007 ,  Y10T29/4908 ,  Y10T29/49128 ,  Y10T29/49133 ,  Y10T29/49135

摘要： In a quartz crystal unit, the unit comprising a case, a quartz crystal tuning fork resonator and a lid, the resonator having a tuning fork base, and first and second tuning fork tines, each of the first and second tuning fork tines having a first side surface and a second side surface opposite the first side surface, the first side surface of the first tuning fork tine confronting the second side surface of the second tuning fork tine; at least one groove having a plurality of surfaces including a first surface being formed in at least one of first and second main surfaces of each of the first and second tuning fork tines so that only the first surface of the at least one groove is directly opposite the first side surface of the corresponding tuning fork tine and a width of the at least one groove is greater than or equal to a distance in the width direction of the at least one groove measured from an outer edge of the at least one groove to an outer edge of the corresponding one of the first and second tuning fork tines and less than 0.07 mm.

摘要翻译： 在石英晶体单元中，所述单元包括壳体，石英音叉谐振器和盖子，所述谐振器具有音叉基座，以及第一和第二音叉尖齿，所述第一和第二音叉尖端中的每一个具有第一 与第一侧面相对的第二侧面，与第二音叉齿的第二侧面相对的第一音叉尖的第一侧面; 具有多个表面的至少一个凹槽包括第一表面，所述第一表面形成在所述第一和第二音叉齿中的每一个的第一和第二主表面中的至少一个中，使得仅所述至少一个凹槽的所述第一表面直接相对 相应的音叉齿的第一侧表面和至少一个凹槽的宽度大于或等于从至少一个凹槽的外边缘测量的至少一个凹槽的宽度方向上的距离， 第一和第二音叉尖齿中相应的一个的外边缘小于0.07mm。

公开(公告)号：US09444428B2

公开(公告)日：2016-09-13

申请号：US14471210

申请日：2014-08-28

申请人： Avago Technologies General IP (Singapore) Pte. Ltd.

发明人： Richard C. Ruby ,  Steve Martin ,  Brice Ivira ,  Suresh Sridaran

IPC分类号： H03H9/54 ,  H03H9/02 ,  H03H9/08 ,  H03H9/17 ,  H01L41/047 ,  H01L41/04 ,  H03H3/02 ,  H03H9/13

CPC分类号： H03H9/54 ,  H01L41/04 ,  H01L41/0477 ,  H03H3/02 ,  H03H9/02086 ,  H03H9/02102 ,  H03H9/08 ,  H03H9/132 ,  H03H9/171

摘要： An film bulk acoustic wave resonator (FBAR) structure has an FBAR and a via disposed substantially directly beneath the FBAR. The via is in thermal contact with the FBAR. A plurality of vias may be included. The via(s) serve to dissipate heat generated by the FBAR structure during operation.

摘要翻译： 薄膜体声波谐振器（FBAR）结构具有基本上直接位于FBAR下方的FBAR和通孔。 通孔与FBAR热接触。 可以包括多个通孔。 通孔用于在操作期间散发由FBAR结构产生的热量。

公开(公告)号：US20160195440A1

公开(公告)日：2016-07-07

申请号：US15070723

申请日：2016-03-15

申请人： Nike, Inc.

发明人： Michael S. Amos ,  Frederick J. Dojan ,  Daniel Johnson ,  James C. Meschter ,  Matthew A. Nurse ,  Andrew A. Owings ,  Jeffrey C. Pisciotta ,  Allan M. Schrock ,  Steven H. Walker

IPC分类号： G01L1/22

CPC分类号： G01L1/2206 ,  A43B3/0005 ,  A43B13/12 ,  A43B13/14 ,  A43C19/00 ,  A63B24/0062 ,  G01L1/16 ,  G01L1/18 ,  H01L41/04

摘要： Various sensor systems are described herein, including inserts having sensors thereon, which are configured to be received in an article of footwear. The inserts may be connected to a sole member of the footwear, or may function as a sole member. The sensors may be bonded to an outer surface of the insert, or positioned within the insert, in some configurations. The system may also include an electronic module that is overmolded into the sole structure and includes a connector for external access.

摘要翻译： 本文描述了各种传感器系统，包括其上具有传感器的插入件，其被配置为容纳在鞋类物品中。 插入件可以连接到鞋类的鞋底构件，或者可以用作鞋底构件。 在一些配置中，传感器可以结合到插入件的外表面或定位在插入件内。 该系统还可以包括电子模块，其被包覆模制到鞋底结构中并且包括用于外部通路的连接器。

公开(公告)号：US09283757B2

公开(公告)日：2016-03-15

申请号：US14179187

申请日：2014-02-12

申请人： SEIKO EPSON CORPORATION

发明人： Noboru Furuya ,  Masao Nakayama

IPC分类号： B41J2/045 ,  B41J2/14 ,  H01L41/09 ,  B41J2/055 ,  B41J2/16 ,  H01L41/04 ,  H01L41/08 ,  H01L41/332

CPC分类号： B41J2/14201 ,  B41J2/055 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1645 ,  B41J2/1646 ,  B41J2002/14241 ,  H01L41/04 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/332

摘要： A liquid ejecting head which includes a piezoelectric element which includes a first electrode, a piezoelectric layer which is provided on the first electrode, and on which a plurality of piezoelectric films are laminated, a second electrode which is provided on the piezoelectric layer, and a plurality of active units which are interposed between the first electrode and the second electrode, and a pressure generating chamber which communicates with nozzle openings which eject liquid, and in which a pressure fluctuation is generated by the piezoelectric element, in which a plurality of grooves with inner faces facing the first electrode side are formed on a side surface of the piezoelectric layer on each interface of each of the piezoelectric films along a first direction and a second direction which cross a third direction which goes from the first electrode to the second electrode.

摘要翻译： 一种液体喷射头，包括压电元件，该压电元件包括​​第一电极，设置在第一电极上的压电层，并且多个压电膜层叠在其上，设置在压电层上的第二电极和 插入在第一电极和第二电极之间的多个有源单元，以及与喷射液体的喷嘴开口连通并且压电元件产生压力波动的压力发生室，其中多个槽具有 在每个压电膜的每个界面上的压电层的侧表面上形成面向第一电极侧的内表面沿着第一方向和第二方向，该第二方向跨越从第一电极延伸到第二电极的第三方向。

公开(公告)号：US20160035959A1

公开(公告)日：2016-02-04

申请号：US14814182

申请日：2015-07-30

申请人： Robert Bosch GmbH

发明人： Thomas MAYER ,  Juergen BUTZ ,  Rainer STRAUB ,  Jochen TOMASCHKO ,  Christof SINGLE

IPC分类号： H01L41/04 ,  H01L41/113 ,  H01L41/187 ,  H01L41/29 ,  H01L41/314 ,  H01L41/337 ,  H01L41/047 ,  H01L41/09

CPC分类号： H01L41/04 ,  H01L41/047 ,  H01L41/0533 ,  H01L41/0805 ,  H01L41/083 ,  H01L41/0926 ,  H01L41/1132 ,  H01L41/1876 ,  H01L41/27 ,  H01L41/29 ,  H01L41/314 ,  H01L41/331 ,  H01L41/337

摘要： A manufacturing method is provided for a piezoelectric layer arrangement and a corresponding piezoelectric layer arrangement. The manufacturing method includes the steps: depositing a first electrode layer on a substrate; depositing a first insulating layer on the first electrode layer; forming a through opening in the first insulating layer to expose the first electrode layer within the through opening; depositing a piezoelectric layer on the first insulating layer and on the first electrode layer within the through opening; back-polishing the resulting structure to form a planar surface, on which a piezoelectric layer area, surrounded by the first insulating layer, is exposed; and depositing and structuring a second electrode layer on the first insulating layer, which contacts the piezoelectric layer area.

摘要翻译： 提供了一种用于压电层布置和相应的压电层布置的制造方法。 该制造方法包括以下步骤：在基板上沉积第一电极层; 在所述第一电极层上沉积第一绝缘层; 在所述第一绝缘层中形成通孔以在所述通孔内露出所述第一电极层; 在第一绝缘层和通孔内的第一电极层上沉积压电层; 对所得到的结构进行背面抛光以形成平面，在其上暴露由第一绝缘层包围的压电层区域; 以及在与所述压电层区域接触的所述第一绝缘层上沉积和构造第二电极层。