公开(公告)号：US20050081778A1

公开(公告)日：2005-04-21

申请号：US10500268

申请日：2002-12-25

申请人： Masahiko Ando ,  Masaru Yuyama ,  Shiro Yoshino

发明人： Masahiko Ando ,  Masaru Yuyama ,  Shiro Yoshino

IPC分类号： H01L21/322 ,  H01L21/324 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： H01L21/324 ,  H01L21/3225

摘要： A method for eliminating defects in single crystal silicon, which comprises subjecting single crystal silicon prepared by the CZ method to an oxidation treatment and then to an ultra high temperature heat treatment at a temperature of at least 1300° C., or comprises subjecting single crystal silicon which is prepared by the CZ method and is not subjected to an oxidation treatment (a bare wafer) to an ultra high temperature heat treatment in an oxygen atmosphere and at a temperature of higher than 1200° C. and lower than 1310° C. The method allows the elimination of void defects present in single crystal silicon with reliability.

摘要翻译： 一种消除单晶硅缺陷的方法，其包括将通过CZ法制备的单晶硅进行氧化处理，然后在至少1300℃的温度下进行超高温热处理，或包括使单晶 硅，其通过CZ法制备，并且在氧气氛中和在高于1200℃且低于1310℃的温度下不经过氧化处理（裸晶片）至超高温热处理。 该方法可以可靠地消除存在于单晶硅中的空隙缺陷。

公开(公告)号：US07226505B2

公开(公告)日：2007-06-05

申请号：US10500268

申请日：2002-12-25

申请人： Masahiko Ando ,  Masaru Yuyama ,  Shiro Yoshino

发明人： Masahiko Ando ,  Masaru Yuyama ,  Shiro Yoshino

IPC分类号： C30B15/20

CPC分类号： H01L21/324 ,  H01L21/3225

摘要： A method for eliminating defects in single crystal silicon, which comprises subjecting single crystal silicon prepared by the CZ method to an oxidation treatment and then to an ultra high temperature heat treatment at a temperature of at least 1300° C., or comprises subjecting single crystal silicon which is prepared by the CZ method and is not subjected to an oxidation treatment (a bare wafer) to an ultra high temperature heat treatment in an oxygen atmosphere and at a temperature of higher than 1200° C. and lower than 1310° C. The method allows the elimination of void defects present in single crystal silicon with reliability.

摘要翻译： 一种消除单晶硅缺陷的方法，其包括将通过CZ法制备的单晶硅进行氧化处理，然后在至少1300℃的温度下进行超高温热处理，或包括使单晶 硅，其通过CZ法制备，并且在氧气氛中和在高于1200℃且低于1310℃的温度下不经过氧化处理（裸晶片）至超高温热处理。 该方法可以可靠地消除存在于单晶硅中的空隙缺陷。

公开(公告)号：US20070113778A1

公开(公告)日：2007-05-24

申请号：US11653309

申请日：2007-01-16

申请人： Satoshi Komiya ,  Shiro Yoshino ,  Masayoshi Danbata ,  Kouchirou Hayashida

发明人： Satoshi Komiya ,  Shiro Yoshino ,  Masayoshi Danbata ,  Kouchirou Hayashida

IPC分类号： C30B19/00

CPC分类号： C30B15/04 ,  C30B15/00 ,  C30B29/06

摘要： A silicon ingot is manufactured by pulling a nitrogen doped silicon single crystal. The oxygen concentration in the crystal is controlled during the pulling, so as to maintain a relationship between the oxygen and nitrogen concentration in the ingot, corresponding to the formula Oi=C1−[C2×(Log Ni)], where C1 and C2 are first and second constants, and Oi is the oxygen concentration and Ni is the nitrogen concentration in the ingot. C1 and C2 will vary depending on the defect criteria. For example, for one criteria C1 may equal to 146.3×1017 and C2 may equal to 9×1017, and Ni may be within the range of approximately 3×1015 to approximately 3×1014 atoms/cm3, while for a stricter defect criteria C1 may equal 127×1017 and C2 may equal 8×1017, and Ni may be within the range proximately 1×1015 to approximately 1×1014 atoms/cm3.

摘要翻译： 通过拉氮掺杂硅单晶制造硅锭。 在拉伸期间控制晶体中的氧浓度，以保持晶锭中氧和氮浓度之间的关系，对应于式O i = C 1 - [C 2x（Log Ni）]，其中C 1和 C 2是第一和第二常数，Oi是氧浓度，Ni是锭中的氮浓度。 C 1和C 2将根据缺陷标准而变化。 例如，对于一个标准，C 1可以等于146.3×10 17，C 2可以等于9×10 17，并且Ni可以在 约3×10 15至约3×10 14原子/ cm 3的范围，而对于更严格的缺陷，C 1可以等于127×10 17 和C 2可以等于8×10 17，并且Ni可以在约1×10 15至约1×10 14原子/ cm 3的范围内 ^{3 。}

公开(公告)号：US07759227B2

公开(公告)日：2010-07-20

申请号：US11578814

申请日：2005-04-22

申请人： Susumu Maeda ,  Takahisa Sugiman ,  Shinya Sadohara ,  Shiro Yoshino ,  Kouzo Nakamura

发明人： Susumu Maeda ,  Takahisa Sugiman ,  Shinya Sadohara ,  Shiro Yoshino ,  Kouzo Nakamura

IPC分类号： H01L21/322 ,  H01L29/167

CPC分类号： H01L21/3225

摘要： A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing atmosphere. The heat-treatment method is provided for forming a desired internal defect density distribution by controlling a nitrogen concentration distribution in a depth direction of the silicon wafer for heat-treatment, the method including heat-treating a predetermined silicon wafer used for manufacturing a silicon wafer having a denuded zone in the vicinity of the surface thereof.

摘要翻译： 提供了能够通过在含氮气氛中在RTA之后任意控制晶片BMD密度的深度方向上的M形分布，从而普遍地控制对制造商对制造商的需求可以不同的接近吸气结构的方法。 提供了通过控制用于热处理的硅晶片的深度方向上的氮浓度分布来形成期望的内部缺陷密度分布的热处理方法，该方法包括热处理用于制造硅晶片的预定硅晶片 在其表面附近具有剥离区域。

公开(公告)号：US20100075267A1

公开(公告)日：2010-03-25

申请号：US12443365

申请日：2007-09-28

申请人： Shinya Sadohara ,  Kozo Nakamura ,  Shiro Yoshino

发明人： Shinya Sadohara ,  Kozo Nakamura ,  Shiro Yoshino

IPC分类号： C30B15/14

CPC分类号： H01L21/324 ,  H01L21/3225 ,  H01L22/12

摘要： A silicon wafer preferable to a semiconductor device is produced by determining a heat treatment condition hardly causing slip dislocations and heat-treating the silicon wafer under the condition. The resistance is calculated by using a calculation formula used for predicting the slip resistance of the wafer from the density, size, and residual solid-solution oxygen concentration of the oxygen precipitation in the silicon wafer, the state of oxygen precipitation such that heat treatment not causing any slip dislocation can be carried out is designed, and thus a silicon wafer heat treatment method under the heat treatment condition not causing any slip dislocation is determined. A silicon wafer heat-treated under such a condition can be provided.

摘要翻译： 通过确定在该条件下几乎不引起滑移位错和热处理硅晶片的热处理条件来制造优于半导体器件的硅晶片。 通过使用用于从硅晶片中的氧沉淀的密度，尺寸和残留固溶度氧浓度来预测晶片的滑动阻力的计算公式，氧沉淀的状态使得不进行热处理来计算电阻 导致任何滑移位错都可以进行设计，因此硅片热处理方法在热处理条件下不会产生滑脱错位。 可以提供在这种条件下热处理的硅晶片。

公开(公告)号：US08246744B2

公开(公告)日：2012-08-21

申请号：US10586445

申请日：2005-01-27

申请人： Kozo Nakamura ,  Junsuke Tomioka ,  Tetsuro Akagi ,  Shiro Yoshino

发明人： Kozo Nakamura ,  Junsuke Tomioka ,  Tetsuro Akagi ,  Shiro Yoshino

IPC分类号： C30B29/06

CPC分类号： C30B15/206 ,  C30B29/06 ,  C30B33/02 ,  H01L21/3225

摘要： By specifying an initial oxygen concentration in a silicon single crystal and a concentration of thermal donors produced according to a thermal history from 400° C. to 550° C. that the silicon single crystal undergoes during crystal growth, a nucleation rate of oxygen precipitates produced in the silicon single crystal while the silicon single crystal is subjected to a heat treatment is determined. Further, by specifying the heat treatment condition of the silicon single crystal, an oxygen precipitate density and an amount of precipitated oxygen under a given heat treatment condition are predicted by calculation.

摘要翻译： 通过指定硅单晶中的初始氧浓度和根据400℃至550℃的热历史产生的热供体的浓度，晶体生长期间硅单晶经历，产生氧沉淀物的成核速率 在硅单晶中进行热处理的同时测定硅单晶。 此外，通过规定硅单晶的热处理条件，通过计算来预测在给定的热处理条件下的氧沉淀物浓度和沉淀氧的量。

公开(公告)号：US07875116B2

公开(公告)日：2011-01-25

申请号：US11887244

申请日：2006-02-14

申请人： Shinya Sadohara ,  Ryota Suewaka ,  Shiro Yoshino ,  Kozo Nakamura ,  Yutaka Shiraishi ,  Syunji Nonaka

发明人： Shinya Sadohara ,  Ryota Suewaka ,  Shiro Yoshino ,  Kozo Nakamura ,  Yutaka Shiraishi ,  Syunji Nonaka

IPC分类号： C30B15/20

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206 ,  C30B33/02 ,  H01L21/3225 ,  Y10T428/21

摘要： A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering source in a bulk are generated, in order to stabilize the quality of the annealed wafer. Considering that annealing a silicon wafer leads to an increase of density (quantity) of deposits associated with oxygen and nitrogen and forming a core of the SSDs, SSDs are decreased by reducing the density (quantity) of the deposits associated with oxygen and nitrogen by controlling three parameters of oxygen concentration, nitrogen concentration and cooling concentration during the process of pulling and growing the silicon single crystal 6 before annealing. Alternatively, SSD is reduced by polishing after annealing.

摘要翻译： 一种可降低SSD的方法，同时减少晶片表面上的SSD以外的空穴缺陷，这对于退火晶片是必需的，并且确保产生用作块体中的吸收源的BMD，以便稳定质量 退火晶片。 考虑到硅晶片的退火导致与氧和氮相关的沉积物的密度（量）增加并形成SSD的核心，通过控制通过控制与氧和氮相关的沉积物的密度（量）来降低SSD 在退火前拉拔生长硅单晶6的过程中，氧浓度，氮浓度和冷却浓度三个参数。 或者，退火后通过抛光减少SSD。

公开(公告)号：US5385115A

公开(公告)日：1995-01-31

申请号：US30356

申请日：1993-05-13

申请人： Junsuke Tomioka ,  Tetsuro Akagi ,  Shiro Yoshino

发明人： Junsuke Tomioka ,  Tetsuro Akagi ,  Shiro Yoshino

IPC分类号： H01L21/322 ,  H01L21/324 ,  C30B1/02

CPC分类号： H01L21/3225

摘要： A semiconductor wafer heat treatment method for improving the yield of devices which are end products by sampling sliced single-crystal silicon wafers made by CZ method to previously calculate the thermal donor concentration of each portion on the wafers and providing them with the IG heat treatment process which causes oxygen precipitation nucleus under the heat treatment condition determined according to the thermal donor concentration so that the change value (delta Oi) of the initial oxygen concentration (initial Oi) before the IG heat treatment to the oxygen concentration after the heat treatment will be kept within a predetermined range.

摘要翻译： PCT No.PCT / JP91 / 01259 Sec。 371日期1993年3月17日 102（e）1993年3月17日PCT PCT 1991年9月20日PCT公布。 出版物WO92 / 05579 日本1992年4月2日。一种半导体晶片热处理方法，用于通过采用通过CZ方法制备的切片单晶硅晶片来提取作为最终产品的器件的产量，以预先计算晶片上每个部分的供体浓度，并提供 它们具有IG热处理过程，其在根据供体浓度确定的热处理条件下引起氧沉淀核，使得IG热处理之前的初始氧浓度（初始Oi）与氧气的变化值（ΔOi） 热处理后的浓度将保持在预定范围内。

公开(公告)号：US08573969B2

公开(公告)日：2013-11-05

申请号：US12443365

申请日：2007-09-28

申请人： Shinya Sadohara ,  Kozo Nakamura ,  Shiro Yoshino

发明人： Shinya Sadohara ,  Kozo Nakamura ,  Shiro Yoshino

IPC分类号： F26B11/02 ,  C01B33/00 ,  C01B33/02

CPC分类号： H01L21/324 ,  H01L21/3225 ,  H01L22/12

摘要： A silicon wafer preferable to a semiconductor device is produced by determining a heat treatment condition hardly causing slip dislocations and heat-treating the silicon wafer under the condition. The resistance is calculated by using a calculation formula used for predicting the slip resistance of the wafer from the density, size, and residual solid-solution oxygen concentration of the oxygen precipitation in the silicon wafer, the state of oxygen precipitation such that heat treatment not causing any slip dislocation can be carried out is designed, and thus a silicon wafer heat treatment method under the heat treatment condition not causing any slip dislocation is determined. A silicon wafer heat-treated under such a condition can be provided.

摘要翻译： 通过确定在该条件下几乎不引起滑移位错和热处理硅晶片的热处理条件来制造优于半导体器件的硅晶片。 通过使用用于从硅晶片中的氧沉淀的密度，尺寸和残留固溶度氧浓度来预测晶片的滑动阻力的计算公式，氧沉淀的状态使得不进行热处理来计算电阻 导致任何滑移位错都可以进行设计，因此硅片热处理方法在热处理条件下不会产生滑脱错位。 可以提供在这种条件下热处理的硅晶片。

公开(公告)号：US06800132B1

公开(公告)日：2004-10-05

申请号：US10049875

申请日：2002-02-12

申请人： Satoshi Komiya ,  Shiro Yoshino ,  Masayoshi Danbata ,  Kouichirou Hayashida

发明人： Satoshi Komiya ,  Shiro Yoshino ,  Masayoshi Danbata ,  Kouichirou Hayashida

IPC分类号： C30B1514

CPC分类号： C30B15/00 ,  C30B29/06

摘要： A method for producing a silicon ingot through pulling up a silicon single crystal according to the Czochralski method, wherein the silicon single crystal is pulled up while being doped with nitrogen in such a condition as to form a part having a nitrogen content of 5×1013 atoms/cm3 to 1×1015 atoms/cm3. A silicon wafer having a nitrogen content of 5×1013 atoms/cm3 to 1×1015 atoms/cm3 which is suitable for being treated with heat in a non-oxidizing atmosphere is manufactured of an ingot produced by using the method. The method can be used for producing a silicon wafer being doped with nitrogen and having satisfactory characteristics for use in a semiconductor device.

摘要翻译： 一种通过根据切克劳斯基法提取硅单晶来生产硅锭的方法，其中，在形成氮含量为5×10 13的部分的条件下，将硅单晶在被氮掺杂的同时被拉起 >原子/ cm 3至1×10 15原子/ cm 3。 氮氧含量为5×10 13原子/ cm 3至1×10 15原子/ cm 3的硅晶片，其适用于在非氧化性气氛中用热处理，由 使用方法。 该方法可用于制造掺杂有氮的硅晶片，并具有用于半导体器件的令人满意的特性。