公开(公告)号：US20090061140A1

公开(公告)日：2009-03-05

申请号：US11887244

申请日：2006-02-14

申请人： Shinya Sadohara ,  Ryota Suewaka ,  Shiro Yoshino ,  Kozo Nakamura ,  Yutaka Shiraishi ,  Syunji Nonaka

发明人： Shinya Sadohara ,  Ryota Suewaka ,  Shiro Yoshino ,  Kozo Nakamura ,  Yutaka Shiraishi ,  Syunji Nonaka

IPC分类号： B32B3/02 ,  H01L21/20

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206 ,  C30B33/02 ,  H01L21/3225 ,  Y10T428/21

摘要： A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering source in a bulk are generated, in order to stabilize the quality of the annealed wafer. Considering that annealing a silicon wafer leads to an increase of density (quantity) of deposits associated with oxygen and nitrogen and forming a core of the SSDs, SSDs are decreased by reducing the density (quantity) of the deposits associated with oxygen and nitrogen by controlling three parameters of oxygen concentration, nitrogen concentration and cooling concentration during the process of pulling and growing the silicon single crystal 6 before annealing. Alternatively, SSD is reduced by polishing after annealing.

摘要翻译： 一种可降低SSD的方法，同时减少晶片表面上的SSD以外的空穴缺陷，这对于退火的晶片是必需的，并且确保产生作为大量吸收源的BMD，以便稳定质量 退火晶片。 考虑到硅晶片的退火导致与氧和氮相关的沉积物的密度（量）增加并形成SSD的核心，通过控制通过控制与氧和氮相关的沉积物的密度（量）来降低SSD 在退火前拉拔生长硅单晶6的过程中，氧浓度，氮浓度和冷却浓度三个参数。 或者，退火后通过抛光减少SSD。

公开(公告)号：US07875116B2

公开(公告)日：2011-01-25

申请号：US11887244

申请日：2006-02-14

申请人： Shinya Sadohara ,  Ryota Suewaka ,  Shiro Yoshino ,  Kozo Nakamura ,  Yutaka Shiraishi ,  Syunji Nonaka

发明人： Shinya Sadohara ,  Ryota Suewaka ,  Shiro Yoshino ,  Kozo Nakamura ,  Yutaka Shiraishi ,  Syunji Nonaka

IPC分类号： C30B15/20

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206 ,  C30B33/02 ,  H01L21/3225 ,  Y10T428/21

摘要： A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering source in a bulk are generated, in order to stabilize the quality of the annealed wafer. Considering that annealing a silicon wafer leads to an increase of density (quantity) of deposits associated with oxygen and nitrogen and forming a core of the SSDs, SSDs are decreased by reducing the density (quantity) of the deposits associated with oxygen and nitrogen by controlling three parameters of oxygen concentration, nitrogen concentration and cooling concentration during the process of pulling and growing the silicon single crystal 6 before annealing. Alternatively, SSD is reduced by polishing after annealing.

摘要翻译： 一种可降低SSD的方法，同时减少晶片表面上的SSD以外的空穴缺陷，这对于退火晶片是必需的，并且确保产生用作块体中的吸收源的BMD，以便稳定质量 退火晶片。 考虑到硅晶片的退火导致与氧和氮相关的沉积物的密度（量）增加并形成SSD的核心，通过控制通过控制与氧和氮相关的沉积物的密度（量）来降低SSD 在退火前拉拔生长硅单晶6的过程中，氧浓度，氮浓度和冷却浓度三个参数。 或者，退火后通过抛光减少SSD。

公开(公告)号：US08573969B2

公开(公告)日：2013-11-05

申请号：US12443365

申请日：2007-09-28

申请人： Shinya Sadohara ,  Kozo Nakamura ,  Shiro Yoshino

发明人： Shinya Sadohara ,  Kozo Nakamura ,  Shiro Yoshino

IPC分类号： F26B11/02 ,  C01B33/00 ,  C01B33/02

CPC分类号： H01L21/324 ,  H01L21/3225 ,  H01L22/12

摘要： A silicon wafer preferable to a semiconductor device is produced by determining a heat treatment condition hardly causing slip dislocations and heat-treating the silicon wafer under the condition. The resistance is calculated by using a calculation formula used for predicting the slip resistance of the wafer from the density, size, and residual solid-solution oxygen concentration of the oxygen precipitation in the silicon wafer, the state of oxygen precipitation such that heat treatment not causing any slip dislocation can be carried out is designed, and thus a silicon wafer heat treatment method under the heat treatment condition not causing any slip dislocation is determined. A silicon wafer heat-treated under such a condition can be provided.

摘要翻译： 通过确定在该条件下几乎不引起滑移位错和热处理硅晶片的热处理条件来制造优于半导体器件的硅晶片。 通过使用用于从硅晶片中的氧沉淀的密度，尺寸和残留固溶度氧浓度来预测晶片的滑动阻力的计算公式，氧沉淀的状态使得不进行热处理来计算电阻 导致任何滑移位错都可以进行设计，因此硅片热处理方法在热处理条件下不会产生滑脱错位。 可以提供在这种条件下热处理的硅晶片。

公开(公告)号：US20100075267A1

公开(公告)日：2010-03-25

申请号：US12443365

申请日：2007-09-28

申请人： Shinya Sadohara ,  Kozo Nakamura ,  Shiro Yoshino

发明人： Shinya Sadohara ,  Kozo Nakamura ,  Shiro Yoshino

IPC分类号： C30B15/14

CPC分类号： H01L21/324 ,  H01L21/3225 ,  H01L22/12

摘要： A silicon wafer preferable to a semiconductor device is produced by determining a heat treatment condition hardly causing slip dislocations and heat-treating the silicon wafer under the condition. The resistance is calculated by using a calculation formula used for predicting the slip resistance of the wafer from the density, size, and residual solid-solution oxygen concentration of the oxygen precipitation in the silicon wafer, the state of oxygen precipitation such that heat treatment not causing any slip dislocation can be carried out is designed, and thus a silicon wafer heat treatment method under the heat treatment condition not causing any slip dislocation is determined. A silicon wafer heat-treated under such a condition can be provided.

摘要翻译： 通过确定在该条件下几乎不引起滑移位错和热处理硅晶片的热处理条件来制造优于半导体器件的硅晶片。 通过使用用于从硅晶片中的氧沉淀的密度，尺寸和残留固溶度氧浓度来预测晶片的滑动阻力的计算公式，氧沉淀的状态使得不进行热处理来计算电阻 导致任何滑移位错都可以进行设计，因此硅片热处理方法在热处理条件下不会产生滑脱错位。 可以提供在这种条件下热处理的硅晶片。

公开(公告)号：US20070252239A1

公开(公告)日：2007-11-01

申请号：US11578814

申请日：2005-04-22

申请人： Susumu Maeda ,  Takahisa Sugiman ,  Shinya Sadohara ,  Shiro Yoshino ,  Kouzo Nakamura

发明人： Susumu Maeda ,  Takahisa Sugiman ,  Shinya Sadohara ,  Shiro Yoshino ,  Kouzo Nakamura

IPC分类号： H01L29/167 ,  H01L21/322

CPC分类号： H01L21/3225

摘要： A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing atmosphere. The heat-treatment method is provided for forming a desired internal defect density distribution by controlling a nitrogen concentration distribution in a depth direction of the silicon wafer for heat-treatment, the method including heat-treating a predetermined silicon wafer used for manufacturing a silicon wafer having a denuded zone in the vicinity of the surface thereof.

摘要翻译： 提供了能够通过在含氮气氛中在RTA之后任意控制晶片BMD密度的深度方向上的M形分布，从而普遍地控制对制造商对制造商的需求可以不同的接近吸气结构的方法。 提供了通过控制用于热处理的硅晶片的深度方向上的氮浓度分布来形成期望的内部缺陷密度分布的热处理方法，该方法包括热处理用于制造硅晶片的预定硅晶片 在其表面附近具有剥离区域。

公开(公告)号：US07759227B2

公开(公告)日：2010-07-20

申请号：US11578814

申请日：2005-04-22

申请人： Susumu Maeda ,  Takahisa Sugiman ,  Shinya Sadohara ,  Shiro Yoshino ,  Kouzo Nakamura

发明人： Susumu Maeda ,  Takahisa Sugiman ,  Shinya Sadohara ,  Shiro Yoshino ,  Kouzo Nakamura

IPC分类号： H01L21/322 ,  H01L29/167

CPC分类号： H01L21/3225

摘要： A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing atmosphere. The heat-treatment method is provided for forming a desired internal defect density distribution by controlling a nitrogen concentration distribution in a depth direction of the silicon wafer for heat-treatment, the method including heat-treating a predetermined silicon wafer used for manufacturing a silicon wafer having a denuded zone in the vicinity of the surface thereof.

摘要翻译： 提供了能够通过在含氮气氛中在RTA之后任意控制晶片BMD密度的深度方向上的M形分布，从而普遍地控制对制造商对制造商的需求可以不同的接近吸气结构的方法。 提供了通过控制用于热处理的硅晶片的深度方向上的氮浓度分布来形成期望的内部缺陷密度分布的热处理方法，该方法包括热处理用于制造硅晶片的预定硅晶片 在其表面附近具有剥离区域。

公开(公告)号：US07141113B1

公开(公告)日：2006-11-28

申请号：US09856212

申请日：1999-11-19

申请人： Kozo Nakamura ,  Toshiaki Saishoji ,  Hirotaka Nakajima ,  Shinya Sadohara ,  Masashi Nishimura ,  Toshirou Kotooka ,  Yoshiyuki Shimanuki

发明人： Kozo Nakamura ,  Toshiaki Saishoji ,  Hirotaka Nakajima ,  Shinya Sadohara ,  Masashi Nishimura ,  Toshirou Kotooka ,  Yoshiyuki Shimanuki

IPC分类号： C30B33/02

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206

摘要： A method for growing a silicon crystal by a Czochralsky method, wherein, let a pulling speed be V (mm/min) and an average value of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350° C., be G (° C./mm), V/G ranges from 0.16 to 0.18 mm2/° C. min between a crystal center position and a crystal outer periphery position, and a ratio G outer/G center of an average value G of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350° C., at a crystal outer surface to that at a crystal center is set to up to 1.10 to thereby obtain a high-quality perfect crystal silicon wafer. Such a perfect crystal silicon wafer, wherein an oxygen concentration is controlled to up to 13×1017 atoms/cm3, an initial heat treatment temperature is at least up to 500° C. and a temperature is raised at up to 1° C./min at least within 700 to 900° C., thereby making uniform a wafer radial distribution to an arbitrary oxygen precipitation density level.

摘要翻译： 一种通过切克劳斯基法生长硅晶体的方法，其中，拉伸速度为V（mm / min），拉伸轴方向的晶体内温度梯度的平均值在温度范围内，硅熔点 至1350℃，为G（℃/ mm），V / G在晶体中心位置和晶体外周位置之间的范围为0.16至0.18mm 2 /℃， 以及在温度范围内的牵引轴方向的晶体内温度梯度的平均值G的比G外部/ G中心，硅熔点为1350℃，晶体外表面与晶体的晶体温度梯度 中心设置为1.10，从而获得高质量的完美晶体硅晶片。 这种完美的晶体硅晶片，其中氧浓度被控制到高达13×10 17原子/ cm 3，初始热处理温度至少高达500℃ 并且在至少在700至900℃之间将温度升至高达1℃/分钟，从而使得晶片的径向分布均匀到任意的氧析出浓度水平。

公开(公告)号：US08426297B2

公开(公告)日：2013-04-23

申请号：US13057902

申请日：2009-08-07

申请人： Shinya Sadohara

发明人： Shinya Sadohara

IPC分类号： H01L21/20 ,  H01L21/26

CPC分类号： H01L21/324 ,  C30B15/04 ,  C30B29/06 ,  C30B33/00 ,  C30B33/02 ,  H01L21/02008 ,  H01L21/3225

摘要： A method of manufacturing a silicon wafer, an oxygen concentration in a surface layer to be maintained more than a predetermined value while promoting a defect-free layer. Strength of the surface layer can be made higher than that of an ordinary annealed sample as a COP free zone is secured. A method of manufacturing a silicon wafer doped with nitrogen and oxygen, includes growing a single crystal silicon doped with the nitrogen by Czochralski method, slicing the grown single crystal silicon to obtain a single crystal silicon wafer; heat treating the sliced single crystal silicon wafer in an ambient gas including a hydrogen gas and/or an inert gas; polishing the heat treated single crystal silicon wafer, after the heat treatment, such that an obtained surface layer from which COP defects have been removed by the heat treatment is polished away until an outermost surface has a predetermined oxygen concentration.

摘要翻译： 一种制造硅晶片的方法，在保持超过预定值的表面层中的氧浓度同时促进无缺陷层。 可确保表层的强度高于常规退火样品的强度，因为确保了COP自由区。 制造掺杂有氮和氧的硅晶片的方法包括通过切克劳斯基法生长掺杂有氮的单晶硅，将生长的单晶硅切片以获得单晶硅晶片; 在包括氢气和/或惰性气体的环境气体中热处理切片的单晶硅晶片; 在热处理后对经热处理的单晶硅晶片进行抛光，使得通过热处理除去COP缺陷的获得的表面层被抛光，直到最外表面具有预定的氧浓度。

公开(公告)号：US20130095660A1

公开(公告)日：2013-04-18

申请号：US13807082

申请日：2011-07-01

申请人： Ryuichi Tanimoto ,  Shinya Sadohara ,  Takeru Takushima

发明人： Ryuichi Tanimoto ,  Shinya Sadohara ,  Takeru Takushima

IPC分类号： H01L21/306

CPC分类号： H01L21/30625 ,  B24B37/044 ,  H01L21/02024

摘要： To final polish a finish-polished surface using a final polishing solution whose chief component is a weakly basic aqueous solution that does not contain abrasive grains. During the final polishing, the weakly basic aqueous solution having an alkali concentration that reduces a haze value of a final-polished surface below the haze value of the finish-polished surface of the wafer is used as the chief component of the final polishing solution.

摘要翻译： 使用最终抛光溶液最终抛光精抛光表面，其主要成分是不含磨粒的弱碱性水溶液。 在最终研磨中，将作为最终抛光液的主要成分的碱处理浓度降低到最终抛光面的雾度值以下的弱碱性水溶液，作为最终研磨面的主要成分。

公开(公告)号：US20110143526A1

公开(公告)日：2011-06-16

申请号：US13057902

申请日：2009-08-07

申请人： Shinya Sadohara

发明人： Shinya Sadohara

IPC分类号： H01L21/20 ,  H01L21/26

CPC分类号： H01L21/324 ,  C30B15/04 ,  C30B29/06 ,  C30B33/00 ,  C30B33/02 ,  H01L21/02008 ,  H01L21/3225

摘要： A method of manufacturing a silicon wafer, an oxygen concentration in a surface layer to be maintained more than a predetermined value while promoting a defect-free layer. Strength of the surface layer can be made higher than that of an ordinary annealed sample as a COP free zone is secured. A method of manufacturing a silicon wafer doped with nitrogen and oxygen, includes growing a single crystal silicon doped with the nitrogen by Czochralski method, slicing the grown single crystal silicon to obtain a single crystal silicon wafer; heat treating the sliced single crystal silicon wafer in an ambient gas including a hydrogen gas and/or an inert gas; polishing the heat treated single crystal silicon wafer, after the heat treatment, such that an obtained surface layer from which COP defects have been removed by the heat treatment is polished away until an outermost surface has a predetermined oxygen concentration.

摘要翻译： 一种制造硅晶片的方法，在保持超过预定值的表面层中的氧浓度同时促进无缺陷层。 可确保表层的强度高于常规退火样品的强度，因为确保了COP自由区。 制造掺杂有氮和氧的硅晶片的方法包括通过切克劳斯基法生长掺杂有氮的单晶硅，将生长的单晶硅切片以获得单晶硅晶片; 在包括氢气和/或惰性气体的环境气体中热处理切片的单晶硅晶片; 在热处理后对经热处理的单晶硅晶片进行抛光，使得通过热处理除去COP缺陷的获得的表面层被抛光，直到最外表面具有预定的氧浓度。