Novel Cyclic Aminophenylalkanoic Acid Derivative
    7.
    发明申请
    Novel Cyclic Aminophenylalkanoic Acid Derivative 审中-公开
    新型环状氨基苯基链烷酸衍生物

    公开(公告)号:US20090036489A1

    公开(公告)日:2009-02-05

    申请号:US11886909

    申请日:2006-03-22

    CPC分类号: C07D417/12 C07D409/12

    摘要: The present invention provides cyclic aminophenylalkanoic acid derivatives that act as agonists for human peroxisome proliferator-activated receptors (PPARs), in particular human PPARα isoform, and are effective in the treatment of abnormal lipid metabolism, diabetes and other disorders. The present invention also provides addition salts of such cyclic aminophenylalkanoic acid derivatives and pharmaceutical compositions containing these compounds.Specifically, the present invention provides cyclic aminophenylalkanoic acid derivatives represented by the following general formula (1): , or pharmaceutically acceptable salts thereof.

    摘要翻译: 本发明提供了作为人类过氧化物酶体增殖物激活受体(PPAR),特别是人PPARα同种型的激动剂的环状氨基苯基链烷酸衍生物,并且有效治疗脂质代谢异常,糖尿病等疾病。 本发明还提供了这种环状氨基苯基链烷酸衍生物的加成盐和含有这些化合物的药物组合物。 具体地说,本发明提供由以下通式(1)表示的环状氨基苯基链烷酸衍生物或其药学上可接受的盐。

    Method of manufacturing semiconductor device
    8.
    发明申请
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US20070238271A1

    公开(公告)日:2007-10-11

    申请号:US11806862

    申请日:2007-06-05

    IPC分类号: H01L21/20

    摘要: A semiconductor device having SJ structure has a peripheral region having a higher withstand voltage than the withstand voltage of the cell region. A semiconductor upper layer including second conductivity-type impurities and a semiconductor lower layer including first conductivity-type impurities whose concentration is lower than the first portion region constituting the combination of the cell region are formed in the semiconductor layer of the peripheral region. A field oxide layer is formed on a surface of the semiconductor upper layer.

    摘要翻译: 具有SJ结构的半导体器件具有比电池区域的耐电压更高的耐受电压的周边区域。 在周边区域的半导体层中形成有包含第二导电型杂质的半导体上层和包含第一导电型杂质的半导体下层,该第一导电型杂质的浓度低于构成该单元区域组合的第一部分区域。 在半导体上层的表面上形成场氧化物层。