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公开(公告)号：US20070018262A1
公开(公告)日：2007-01-25
申请号：US11530774
申请日：2006-09-11
CPC分类号： H03H3/0076 , H03H9/2463 , H03H9/462 , H03H2009/02511
摘要： A micromachine for a high-frequency filter which has a high Q value and a higher frequency band is provided. The micromachine includes an electrode provided on a substrate, an inter-layer insulation film composed of a first insulation film and a second insulation film which are provided on the substrate in the state of covering the electrode, a hole pattern provided in the second insulation film in the state of reaching the electrode, and a belt-like vibrator electrode provided on the second insulation film so as to cross the upper side of a space portion constituted of the inside of the hole pattern.
摘要翻译： 提供了具有高Q值和较高频带的高频滤波器的微加工机。 微机械包括设置在基板上的电极，由覆盖电极的状态设置在基板上的由第一绝缘膜和第二绝缘膜构成的层间绝缘膜，设置在第二绝缘膜中的孔图案 在到达电极的状态下，以及设置在第二绝缘膜上的带状振动电极，以跨越由孔图案的内部构成的空间部分的上侧。
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公开(公告)号：US07875940B2
公开(公告)日：2011-01-25
申请号：US11530774
申请日：2006-09-11
IPC分类号： H01L29/82
CPC分类号： H03H3/0076 , H03H9/2463 , H03H9/462 , H03H2009/02511
摘要： A micromachine for a high-frequency filter which has a high Q value and a higher frequency band is provided. The micromachine includes an electrode provided on a substrate, an inter-layer insulation film composed of a first insulation film and a second insulation film which are provided on the substrate in the state of covering the electrode, a hole pattern provided in the second insulation film in the state of reaching the electrode, and a belt-like vibrator electrode provided on the second insulation film so as to cross the upper side of a space portion constituted of the inside of the hole pattern.
摘要翻译： 提供了具有高Q值和较高频带的高频滤波器的微加工机。 微机械包括设置在基板上的电极，由覆盖电极的状态设置在基板上的由第一绝缘膜和第二绝缘膜构成的层间绝缘膜，设置在第二绝缘膜中的孔图案 在到达电极的状态下，以及设置在第二绝缘膜上的带状振动电极，以跨越由孔图案的内部构成的空间部分的上侧。
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公开(公告)号：US07402877B2
公开(公告)日：2008-07-22
申请号：US10522080
申请日：2003-07-14
IPC分类号： H01L29/82
CPC分类号： H03H9/2463 , H03H3/0072
摘要： To obtain a micromachine for use as a high frequency filter having a high Q value and a higher frequency band.In a micromachine (20) including: an input electrode (7b), an output electrode (7a), and a support electrode (7c) disposed on a substrate (4); and a band-shaped vibrator electrode (15) formed by laying a beam (vibrating part) (16) over the output electrode (7a) with a space part (A) interposed between the output electrode (7a) and the vibrator electrode (15) in a state in which both end parts of the vibrator electrode (15) are supported on the input electrode (7b) and the substrate (4) with the support electrode (7c) interposed between the substrate (4) and the vibrator electrode (15), the entire surface of both end parts of the vibrator electrode (15) from an edge of the end parts to the beam (16) is completely fixed to the input electrode (7b) and the support electrode (7c).
摘要翻译： 为了获得用作具有高Q值和较高频带的高频滤波器的微机械。 在微机械（20）中，包括：输入电极（7b），输出电极（7a）和设置在基板（4）上的支撑电极; 以及通过将输入电极（7a）上的光束（振动部分）（16）放置在输出电极（7a）和振动器电极（7a）之间的空间部分（A）而形成的带状振动器电极（15） （15）的两个端部被支撑在输入电极（7b）和基板（4）的状态下，支撑电极（7c）插入在基板（4）和 振动电极（15）从振动电极（15）的两端部到端部（16）的边缘的整个表面完全固定到输入电极（7b）和支撑电极 7 c）。
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公开(公告)号：US20050245011A1
公开(公告)日：2005-11-03
申请号：US10522080
申请日：2003-07-14
CPC分类号： H03H9/2463 , H03H3/0072
摘要： To obtain a micromachine for use as a high frequency filter having a high Q value and a higher frequency band. In a micromachine (20) including: an input electrode (7b), an output electrode (7a), and a support electrode (7c) disposed on a substrate (4); and a band-shaped vibrator electrode (15) formed by laying a beam (vibrating part) (16) over the output electrode (7a) with a space part (A) interposed between the output electrode (7a) and the vibrator electrode (15) in a state in which both end parts of the vibrator electrode (15) are supported on the input electrode (7b) and the substrate (4) with the support electrode (7c) interposed between the substrate (4) and the vibrator electrode (15), the entire surface of both end parts of the vibrator electrode (15) from an edge of the end parts to the beam (16) is completely fixed to the input electrode (7b) and the support electrode (7c).
摘要翻译： 为了获得用作具有高Q值和较高频带的高频滤波器的微机械。 在微机械（20）中，包括：输入电极（7b），输出电极（7a）和设置在基板（4）上的支撑电极; 以及通过将输入电极（7a）上的光束（振动部分）（16）放置在输出电极（7a）和振动器电极（7a）之间的空间部分（A）而形成的带状振动器电极（15） （15）的两个端部被支撑在输入电极（7b）和基板（4）的状态下，支撑电极（7c）插入在基板（4）和 振动电极（15）从振动电极（15）的两端部到端部（16）的边缘的整个表面完全固定到输入电极（7b）和支撑电极 7 c）。
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公开(公告)号：US07566956B2
公开(公告)日：2009-07-28
申请号：US11425077
申请日：2006-06-19
申请人： Shun Mitarai , Koichi Ikeda , Masahiro Tada , Akira Akiba , Shinya Morita
发明人： Shun Mitarai , Koichi Ikeda , Masahiro Tada , Akira Akiba , Shinya Morita
IPC分类号： H01L23/02
CPC分类号： B81C1/00238
摘要： The present invention provides a semiconductor composite device including a semiconductor device formed on or in a substrate, an insulating film formed on the substrate so as to cover the semiconductor device, a micro electro mechanical portion formed on the insulating film, and a wiring layer connected to the semiconductor device and the micro electro mechanical portion.
摘要翻译： 本发明提供一种半导体复合器件，其包括形成在衬底上或衬底中的半导体器件，形成在衬底上以覆盖半导体器件的绝缘膜，形成在绝缘膜上的微机电部分和连接的布线层 到半导体器件和微机电部分。
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公开(公告)号：US20060289955A1
公开(公告)日：2006-12-28
申请号：US11425077
申请日：2006-06-19
申请人： Shun Mitarai , Koichi Ikeda , Masahiro Tada , Akira Akiba , Shinya Morita
发明人： Shun Mitarai , Koichi Ikeda , Masahiro Tada , Akira Akiba , Shinya Morita
CPC分类号： B81C1/00238
摘要： The present invention provides a semiconductor composite device including a semiconductor device formed on or in a substrate, an insulating film formed on the substrate so as to cover the semiconductor device, a micro electro mechanical portion formed on the insulating film, and a wiring layer connected to the semiconductor device and the micro electro mechanical portion.
摘要翻译： 本发明提供一种半导体复合器件，其包括形成在衬底上或衬底中的半导体器件，形成在衬底上以覆盖半导体器件的绝缘膜，形成在绝缘膜上的微机电部分和连接的布线层 到半导体器件和微机电部分。
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公开(公告)号：US20060158273A1
公开(公告)日：2006-07-20
申请号：US11331253
申请日：2006-01-12
申请人： Masahiro Tada , Koichi Ikeda
发明人： Masahiro Tada , Koichi Ikeda
IPC分类号： H03B9/01
CPC分类号： H03J3/00 , H03J2200/19
摘要： A micro-oscillator in which the dispersion of center frequency, the interference between adjacent oscillator elements and the like are controlled and the resonance characteristic is excellent, and a semiconductor device including the micro-oscillator as well as a communication apparatus using a band-pass filter including the micro-oscillator, are provided. The micro-oscillator includes: a plurality of beam-type first oscillator elements 33 connected in parallel and a non-resonance beam-type second oscillator element 34 arranged between the first oscillator elements 33 adjacent to each other.
摘要翻译： 其中控制中心频率的色散，相邻振荡器元件之间的干扰等并且谐振特性优异的微振荡器，以及包括微振荡器的半导体器件以及使用带通的通信装置 提供了包括微振荡器的滤波器。 微振荡器包括：并联连接的多个波束型第一振荡器元件33和布置在彼此相邻的第一振荡器元件33之间的非谐振波束型第二振荡器元件34。
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公开(公告)号：US07728682B2
公开(公告)日：2010-06-01
申请号：US11331253
申请日：2006-01-12
申请人： Masahiro Tada , Koichi Ikeda
发明人： Masahiro Tada , Koichi Ikeda
CPC分类号： H03J3/00 , H03J2200/19
摘要： A micro-oscillator in which the dispersion of center frequency, the interference between adjacent oscillator elements and the like are controlled and the resonance characteristic is excellent, and a semiconductor device including the micro-oscillator as well as a communication apparatus using a band-pass filter including the micro-oscillator, are provided. The micro-oscillator includes: a plurality of beam-type first oscillator elements 33 connected in parallel and a non-resonance beam-type second oscillator element 34 arranged between the first oscillator elements 33 adjacent to each other.
摘要翻译： 其中控制中心频率的色散，相邻振荡器元件之间的干扰等并且谐振特性优异的微振荡器，以及包括微振荡器的半导体器件以及使用带通的通信装置 提供了包括微振荡器的滤波器。 微振荡器包括：并联连接的多个波束型第一振荡器元件33和布置在彼此相邻的第一振荡器元件33之间的非谐振波束型第二振荡器元件34。
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公开(公告)号：US20050085000A1
公开(公告)日：2005-04-21
申请号：US10961162
申请日：2004-10-12
申请人： Koichi Ikeda , Takashi Kinoshita
发明人： Koichi Ikeda , Takashi Kinoshita
CPC分类号： B81C1/00611 , B81B2201/042 , B81B2203/0118 , B81C2201/0109 , B81C2201/0119 , B81C2201/0125
摘要： The present invention is directed to manufacturing methods of electrostatic type MEMS devices. The manufacturing method of the present invention includes the steps of forming a substrate side electrode on a substrate, forming a fluid film before or after forming a sacrificial layer, further forming a beam having a driving side electrode on a planarized surface of the fluid film, and finally, removing the sacrificial layer. Furthermore, performing the foregoing method planarizes the surface of a driving side electrode, reduces fluctuations in the shape of a beam, and improves the performance and the uniformity of the MEMS device.
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公开(公告)号：US06946315B2
公开(公告)日：2005-09-20
申请号：US10961162
申请日：2004-10-12
申请人： Koichi Ikeda , Takashi Kinoshita
发明人： Koichi Ikeda , Takashi Kinoshita
CPC分类号： B81C1/00611 , B81B2201/042 , B81B2203/0118 , B81C2201/0109 , B81C2201/0119 , B81C2201/0125
摘要： The present invention is directed to manufacturing methods of electrostatic type MEMS devices. The manufacturing method of the present invention includes the steps of forming a substrate side electrode on a substrate, forming a fluid film before or after forming a sacrificial layer, further forming a beam having a driving side electrode on a planarized surface of the fluid film, and finally, removing the sacrificial layer. Furthermore, performing the foregoing method planarizes the surface of a driving side electrode, reduces fluctuations in the shape of a beam, and improves the performance and the uniformity of the MEMS device.
摘要翻译： 本发明涉及静电型MEMS器件的制造方法。 本发明的制造方法包括在基板上形成基板侧电极，在形成牺牲层之前或之后形成流体膜的步骤，在流体膜的平坦化表面上进一步形成具有驱动侧电极的光束， 最后，去除牺牲层。 此外，执行上述方法使驱动侧电极的表面平坦化，减小了波束形状的波动，提高了MEMS器件的性能和均匀性。
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