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231 条记录 (耗时 0.03 秒)

    Single mode cavity filter
    1.
    发明授权
    Single mode cavity filter 有权

    公开(公告)号：US11967748B2

    公开(公告)日：2024-04-23

    申请号：US17386980

    申请日：2021-07-28

    申请人： AC CONSULTING DI LUCIANO ACCATINO

    发明人： Luciano Accatino

    IPC分类号： H01P1/208 ,  H01P1/207 ,  H03H9/46

    CPC分类号： H01P1/208 ,  H01P1/207 ,  H03H9/462

    摘要： A single mode cavity filter having at least three rectangular or elliptical resonant cavities and at least four coupling irises aligned along a straight axis is disclosed. The filter is configured to be tuned by way of an electro-mechanical device. The filter has tuning rods located in each of the cavities and configured to change, in use, the tuning of the filter. The tuning rods are aligned along an arcuate axis and the electro-mechanical device is configured to move the tuning rods according to an identical depth by way of a single motor in the electro-mechanical device.

    Microwave acoustic wave filters
    6.
    发明授权
    Microwave acoustic wave filters 有权
    微波声波滤波器

    公开(公告)号：US09325294B2

    公开(公告)日：2016-04-26

    申请号：US13934051

    申请日：2013-07-02

    申请人： RESONANT LLC

    发明人： Richard N. Silver ,  Kurt F. Raihn ,  Neal O. Fenzi ,  Robert B. Hammond

    IPC分类号： H03H9/64 ,  H03H9/46 ,  H03H9/54 ,  H03H9/56 ,  H03H9/60 ,  H03H9/25 ,  G06F17/50

    CPC分类号： H03H9/64 ,  G06F17/5063 ,  H03H9/25 ,  H03H9/462 ,  H03H9/465 ,  H03H9/542 ,  H03H9/568 ,  H03H9/605 ,  H03H9/6483 ,  H03H2260/00

    摘要： An acoustic microwave filter comprises an input and an output, and a plurality of acoustic resonators coupled between the input and the output. The difference between the lowest resonant frequency and the highest resonant frequency of a plurality of resonators in the filter is at least 1.25 times the frequency separation of the resonator with the highest resonant frequency in the plurality of resonators. Another acoustic microwave filter comprises an input and an output, and a plurality of acoustic resonators coupled between the input and the output to form a passband. The frequency difference between a local minimum or a local maximum of a return loss magnitude of the acoustic microwave filter and the edge of the passband is at least once the frequency separation of the resonator with the highest resonant frequency.

    摘要翻译： 声波微波滤波器包括输入和输出以及耦合在输入和输出之间的多个声谐振器。 滤波器中的多个谐振器的最低谐振频率和最高谐振频率之间的差异是在多个谐振器中具有最高谐振频率的谐振器的频率分离的至少1.25倍。 另一声波微波滤波器包括输入和输出以及耦合在输入和输出之间以形成通带的多个声谐振器。 声波微波滤波器的回波损耗幅度的局部最小值或局部最大值与通​​带边缘之间的频差至少为共振频率最高的谐振器的频率间隔。

    RF mixer filter MEMS resonator array
    8.
    发明授权
    RF mixer filter MEMS resonator array 有权
    射频混频器滤波器MEMS谐振器阵列

    公开(公告)号：US09190982B2

    公开(公告)日：2015-11-17

    申请号：US13646371

    申请日：2012-10-05

    申请人： TEXAS INSTRUMENTS INCORPORATED

    发明人： Arun Kumar Gupta

    IPC分类号： H03H9/46 ,  H05K13/00

    CPC分类号： H03H9/462 ,  H05K13/00 ,  Y10T29/49117

    摘要： A MEMS mixer filter including an array of a multiplicity of resonator elements with conductive outer surfaces in a coplanar rectangularly tiled array, and two sets of DC bias lines in which alternating resonator elements in each row and column are connected to one or the other sets of bias lines so that laterally adjacent resonators may be biased to a DC potential. The resonator elements are uniform in size and shape. Lateral dimensions of the resonator elements are between 5 and 50 microns. The resonator elements are between 100 nanometers and 100 microns thick, and adjacent resonator elements are separated by a gap between 100 and 500 nanometers. A process of forming the MEMS mixer filter.

    摘要翻译： 一种MEMS混频器滤波器，包括具有共面矩形平铺阵列中的导电外表面的多个谐振元件的阵列，以及两组DC偏置线，其中每行和列中的交变谐振元件连接到一组或另一组 偏置线，使得横向相邻的谐振器可能被偏置到DC电位。 谐振元件的尺寸和形状均匀。 谐振器元件的横向尺寸在5和50微米之间。 谐振器元件在100纳米和100微米厚之间，并且相邻的谐振器元件被分隔在100和500纳米之间的间隙。 形成MEMS混合器过滤器的过程。

    Tunable and switchable resonator and filter structures in single crystal piezoelectric MEMS devices using bimorphs
    9.
    发明授权
    Tunable and switchable resonator and filter structures in single crystal piezoelectric MEMS devices using bimorphs 有权
    使用双压电晶片的单晶压电MEMS器件中的可调谐和可切换谐振器和滤波器结构

    公开(公告)号：US09117593B2

    公开(公告)日：2015-08-25

    申请号：US14071173

    申请日：2013-11-04

    申请人： RF Micro Devices, Inc.

    发明人： Kushal Bhattacharjee

    IPC分类号： H03H9/46 ,  H03H9/54 ,  H01G5/18 ,  H03H9/02 ,  H03H9/24 ,  B81B3/00

    CPC分类号： H01G5/18 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2201/0271 ,  B81B2201/032 ,  H03H9/02275 ,  H03H9/02409 ,  H03H9/2405 ,  H03H9/2463 ,  H03H9/462 ,  H03H9/467 ,  H03H2009/241

    摘要： A MEMS device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. Notably, the piezoelectric layer is a bimorph including a first bimorph layer and a second bimorph layer. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with the first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the substrate, such that the second electrode is in contact with the second bimorph layer of the piezoelectric layer. The second electrode may include a first conducting section and a second conducting section, which are inter-digitally dispersed on the second surface.

    摘要翻译： MEMS器件包括衬底，形成在衬底的第一表面上的一个或多个锚固体和通过一个或多个锚固件悬挂在衬底的第一表面上的压电层。 值得注意的是，压电层是包括第一双晶片层和第二双晶片层的双晶片。 第一电极可以设置在面对基板的第一表面的压电层的第一表面上，使得第一电极与压电层的第一双压电晶片层接触。 第二电极可以设置在与衬底相对的压电层的第二表面上，使得第二电极与压电层的第二双压电晶片层接触。 第二电极可以包括第一导电部分和第二导电部分，其在数字上分散在第二表面上。

    MICROELECTROMECHANICAL SYSTEM WITH A MICRO-SCALE SPRING SUSPENSION SYSTEM AND METHODS FOR MAKING THE SAME
    10.
    发明申请
    MICROELECTROMECHANICAL SYSTEM WITH A MICRO-SCALE SPRING SUSPENSION SYSTEM AND METHODS FOR MAKING THE SAME 有权
    具有微尺度弹簧悬挂系统的微电子机电系统及其制造方法

    公开(公告)号：US20150048903A1

    公开(公告)日：2015-02-19

    申请号：US13970209

    申请日：2013-08-19

    申请人： HARRIS CORPORATION

    发明人： JOHN E. ROGERS

    IPC分类号： H03H9/46

    CPC分类号： H03H9/462 ,  B81B7/0016 ,  B81B2201/0271 ,  H01G5/16 ,  H01G5/40 ,  H03H9/525 ,  Y10T29/4913

    摘要： Integrated Microelectromechanical System (“MEMS”) devices and methods for making the same. The MEMS devices comprise a substrate (200) and a MEMS filter device (100) mechanically suspended above a major surface of the substrate. A first gas gap (202) exists between the major surface of the substrate and the MEMS filter device. An isolation platform (500) is provided to absorb vibrations from an external environment prior to reaching the MEMS filter device. In this regard, the isolation platform comprises: a frame structure (510) framing a periphery of the MEMS filter device; and at least one resilient component (512-518) coupled between the frame structure and the MEMS filter device. The frame structure is mechanically connected to the substrate. Electronic circuitry is connected to the MEMS filter device via a resilient interconnection (204, 206) that is movable in at least one direction of the vibrations.

    摘要翻译： 集成微机电系统（“MEMS”）器件及其制造方法。 MEMS器件包括机械悬浮在衬底的主表面上方的衬底（200）和MEMS过滤器装置（100）。 在衬底的主表面和MEMS过滤器装置之间存在第一气隙（202）。 提供隔离平台（500）以在到达MEMS滤波器装置之前吸收来自外部环境的振动。 在这方面，隔离平台包括：框架结构（510），框架MEMS滤波器装置的外围; 以及耦合在所述框架结构和所述MEMS滤波器装置之间的至少一个弹性部件（512-518）。 框架结构机械连接到基板。 电子电路通过可在振动的至少一个方向上移动的弹性互连（204,206）连接到MEMS滤波器装置。