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    Production method for high-purity lanthanum, high-purity lanthanum, sputtering target composed of high-purity lanthanum, and metal gate film containing high-purity lanthanum as main component
    1.
    发明授权
    Production method for high-purity lanthanum, high-purity lanthanum, sputtering target composed of high-purity lanthanum, and metal gate film containing high-purity lanthanum as main component 有权
    高纯度镧，高纯度镧，由高纯度镧组成的溅射靶和含有高纯度镧作为主要成分的金属栅膜的制备方法

    公开(公告)号：US09234257B2

    公开(公告)日：2016-01-12

    申请号：US13883126

    申请日：2011-11-14

    申请人： Masahiro Takahata ,  Takeshi Gohara

    发明人： Masahiro Takahata ,  Takeshi Gohara

    IPC分类号： H01L21/20 ,  H01L21/36 ,  C22B9/02 ,  C22B5/04 ,  C22B9/22 ,  C22B59/00 ,  C22C28/00 ,  C23C14/16 ,  C23C14/34 ,  C22B9/05 ,  C23C14/14 ,  H01L29/51

    CPC分类号： C22B9/02 ,  C22B5/04 ,  C22B9/05 ,  C22B9/221 ,  C22B59/00 ,  C22C28/00 ,  C23C14/14 ,  C23C14/165 ,  C23C14/3414 ,  H01L29/517

    摘要： A method for producing high-purity lanthanum having a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, wherein lanthanum having a purity of 4N or more is produced by reducing, with distilled calcium, a lanthanum fluoride starting material that has a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, and the obtained lanthanum is subjected to electron beam melting to remove volatile substances. The method for producing high-purity lanthanum, in which Al, Fe, and Cu are respectively contained in the amount of 10 wtppm or less. The method for producing high-purity lanthanum, in which total content of gas components is 1000 wtppm or less. The present invention aims to provide a technique capable of efficiently and stably providing high-purity lanthanum, a sputtering target composed of high-purity lanthanum, and a thin film for metal gate that contains high-purity lanthanum as a main component.

    摘要翻译： 除了镧和气体成分以外，除纯度为4N以上的稀土元素以外，还可以制造纯度为4N以上的高纯度镧的方法，其中纯度为4N以上的镧是用蒸馏钙还原氟化镧原料， 除了镧和气体成分以外，除了稀土元素以外，还含有4N以上的纯度，将所得的镧进行电子束熔融以除去挥发性物质。 Al，Fe和Cu分别含有10重量ppm以下的高纯度镧的制造方法。 其中气体组分的总含量为1000重量ppm以下的高纯度镧的制造方法。 本发明旨在提供一种能够高效稳定地提供高纯度镧，由高纯度镧构成的溅射靶和含有高纯度镧作为主要成分的金属栅薄膜的技术。

    Production Method for High-Purity Lanthanum, High-Purity Lanthanum, Sputtering Target Composed of High-Purity Lanthanum, and Metal Gate Film Containing High-Purity Lanthanum as Main Component
    2.
    发明申请
    Production Method for High-Purity Lanthanum, High-Purity Lanthanum, Sputtering Target Composed of High-Purity Lanthanum, and Metal Gate Film Containing High-Purity Lanthanum as Main Component 有权
    高纯度镧，高纯度镧，高纯度镧组成的溅射靶和含有高纯度镧作为主要成分的金属栅膜的制备方法

    公开(公告)号：US20130241010A1

    公开(公告)日：2013-09-19

    申请号：US13883126

    申请日：2011-11-14

    申请人： Masahiro Takahata ,  Takeshi Gohara

    发明人： Masahiro Takahata ,  Takeshi Gohara

    IPC分类号： C22B9/02 ,  H01L29/51 ,  C23C14/14 ,  C22B9/05 ,  C22C28/00

    CPC分类号： C22B9/02 ,  C22B5/04 ,  C22B9/05 ,  C22B9/221 ,  C22B59/00 ,  C22C28/00 ,  C23C14/14 ,  C23C14/165 ,  C23C14/3414 ,  H01L29/517

    摘要： A method for producing high-purity lanthanum having a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, wherein lanthanum having a purity of 4N or more is produced by reducing, with distilled calcium, a lanthanum fluoride starting material that has a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, and the obtained lanthanum is subjected to electron beam melting to remove volatile substances. The method for producing high-purity lanthanum, in which Al, Fe, and Cu are respectively contained in the amount of 10 wtppm or less. The method for producing high-purity lanthanum, in which total content of gas components is 1000 wtppm or less. The present invention aims to provide a technique capable of efficiently and stably providing high-purity lanthanum, a sputtering target composed of high-purity lanthanum, and a thin film for metal gate that contains high-purity lanthanum as a main component.

    摘要翻译： 除了镧和气体成分以外，除纯度为4N以上的稀土元素以外，还可以制造纯度为4N以上的高纯度镧的方法，其中纯度为4N以上的镧是用蒸馏钙还原氟化镧原料， 除了镧和气体成分以外，除了稀土元素以外，还含有4N以上的纯度，将所得的镧进行电子束熔融以除去挥发性物质。 Al，Fe和Cu分别含有10重量ppm以下的高纯度镧的制造方法。 其中气体组分的总含量为1000重量ppm以下的高纯度镧的制造方法。 本发明旨在提供一种能够高效稳定地提供高纯度镧，由高纯度镧构成的溅射靶和含有高纯度镧作为主要成分的金属栅薄膜的技术。

    HIGH-PURITY LANTHANUM, METHOD FOR PRODUCING SAME, SPUTTERING TARGET COMPRISING HIGH-PURITY LANTHANUM, AND METAL GATE FILM COMPRISING HIGH-PURITY LANTHANUM AS MAIN COMPONENT
    4.
    发明申请
    HIGH-PURITY LANTHANUM, METHOD FOR PRODUCING SAME, SPUTTERING TARGET COMPRISING HIGH-PURITY LANTHANUM, AND METAL GATE FILM COMPRISING HIGH-PURITY LANTHANUM AS MAIN COMPONENT 审中-公开
    高纯度土耳其，其生产方法，包含高纯度土耳其的溅射目标和包含高纯度LANHANUM作为主要成分的金属盖膜

    公开(公告)号：US20140199203A1

    公开(公告)日：2014-07-17

    申请号：US14238209

    申请日：2012-09-04

    申请人： Masahiro Takahata ,  Kazuyuki Satoh ,  Takeshi Gohara ,  Satoyasu Narita

    发明人： Masahiro Takahata ,  Kazuyuki Satoh ,  Takeshi Gohara ,  Satoyasu Narita

    IPC分类号： C22C28/00 ,  C23C14/34 ,  C22B59/00

    CPC分类号： C23C14/3407 ,  C22B9/228 ,  C22B59/00 ,  C22C28/00 ,  C23C14/165 ,  C23C14/3414 ,  C25C3/34 ,  C25C7/005

    摘要： A high-purity lanthanum, characterized by having a purity of 5N or more excluding rare earth elements and gas components, and α-ray count number of 0.001 cph/cm2 or less. A method for producing the high-purity lanthanum characterized by obtaining lanthanum crystal by subjecting a crude lanthanum metal raw material having a purity of 4N or less excluding the gas component to molten salt electrolysis at a bath temperature of 450 to 700° C., subjecting the lanthanum crystal to de-salting treatment, and removing volatile substances by performing electron beam melting, wherein the high-purity lanthanum has a purity of 5N or more excluding rare earth elements and gas components, and α-ray count number of 0.001 cph/cm2 or less. The object of the present invention is providing a technique capable of efficiently and stably providing a high-purity lanthanum with low α-ray, a sputtering target made from the high-purity lanthanum, and a metal gate thin film having the high-purity lanthanum as the main component.

    摘要翻译： 除了稀土元素和气体成分以外，其纯度为5N以上的高纯度镧，α射线计数为0.001cph / cm 2以下。 一种高纯度镧的制造方法，其特征在于，在450〜700℃的浴温下，将纯度为4N以下的粗品镧金属原料除去气体成分进行熔融盐电解，得到镧结晶， 镧晶体进行脱盐处理，通过进行电子束熔融除去挥发性物质，其中除了稀土元素和气体成分之外，高纯度镧的纯度为5N以上，α射线计数为0.001cph / cm2以下。 本发明的目的是提供一种能够高效稳定地提供具有低α射线的高纯度镧，由高纯度镧制成的溅射靶和具有高纯度镧的金属栅极薄膜 作为主要组成部分。

    Method for Producing High-Purity Lanthanum, High-Purity Lanthanum, Sputtering Target Formed from High-Purity Lanthanum, and Metal Gate Film Having Highy-Purity Lanthanum as Main Component
    5.
    发明申请
    Method for Producing High-Purity Lanthanum, High-Purity Lanthanum, Sputtering Target Formed from High-Purity Lanthanum, and Metal Gate Film Having Highy-Purity Lanthanum as Main Component 有权
    高纯度镧，高纯镧，高纯镧形成的溅射靶和高纯镧作为主要成分的金属栅薄膜的制备方法

    公开(公告)号：US20130313659A1

    公开(公告)日：2013-11-28

    申请号：US13980072

    申请日：2012-01-17

    申请人： Masahiro Takahata ,  Kazuyuki Satoh ,  Satoyasu Narita ,  Takeshi Gohara

    发明人： Masahiro Takahata ,  Kazuyuki Satoh ,  Satoyasu Narita ,  Takeshi Gohara

    IPC分类号： H01L29/51 ,  C25C3/34

    CPC分类号： C25C3/34 ,  C22B9/22 ,  C22B59/00 ,  C22C28/00 ,  C23C14/3414 ,  H01L21/28079 ,  H01L29/517

    摘要： The present invention addresses the problem of providing a technique capable of efficiently and stably providing a method for producing high-purity lanthanum, the method characterized in that: a crude lanthanum oxide starting material having a purity of 2N-5N, excluding gas components, is used; the material is subjected to molten salt electrolysis at a bath temperature of 450-700° C. to produce lanthanum crystals; the lanthanum crystals are subsequently desalted: and electron beam melting is then performed to remove volatile substances. The present invention also addresses the problem of providing a technique capable of efficiently and stably providing high-purity lanthanum, high-purity lanthanum itself, a sputtering target formed from high-purity material lanthanum; and a thin film for metal gates that has high purity lanthanum as the main component.

    摘要翻译： 本发明解决提供能够高效稳定地提供高纯度镧的方法的技术的问题，其特征在于：除气体组分外，纯度为2N-5N的粗镧氧化物原料是 用过的; 在450-700℃的浴温下对该材料进行熔盐电解以产生镧晶; 随后将镧晶体脱盐：然后进行电子束熔化以除去挥发性物质。 本发明还涉及提供能够高效稳定地提供高纯度镧，高纯度镧本身，由高纯度材料镧形成的溅射靶的技术的问题， 以高纯度镧为主要成分的金属浇口薄膜。

    Quinolonecarboxylic acid derivatives or salts thereof
    6.
    发明授权
    Quinolonecarboxylic acid derivatives or salts thereof 有权
    喹诺酮羧酸衍生物或其盐

    公开(公告)号：US6025370A

    公开(公告)日：2000-02-15

    申请号：US125016

    申请日：1998-08-10

    申请人： Yozo Todo ,  Kazuya Hayashi ,  Masahiro Takahata ,  Yasuo Watanabe ,  Hirokazu Narita

    发明人： Yozo Todo ,  Kazuya Hayashi ,  Masahiro Takahata ,  Yasuo Watanabe ,  Hirokazu Narita

    IPC分类号： C07D401/04 ,  C07F5/02 ,  A61K31/475 ,  C07D209/30 ,  C07D215/233

    CPC分类号： C07D401/04 ,  C07F5/025

    摘要： The present invention relates to a quinolone-carboxylic acid derivative represented by the general formula [1], or its salt: ##STR1## Of the compounds of the present invention, preferable are compounds in which R.sup.2 represents a substituted or unsubstituted cycloalkyl group; R.sup.3 represents at least one member selected from the group consisting of a hydrogen atom, a halogen atom, a substituted or unsubstituted lower alkyl or lower alkoxy group, and a protected or unprotected hydroxyl or amino group; R.sup.4 represents a hydrogen atom or a substituted or unsubstituted lower alkyl group; each of R.sup.5 and R.sup.6 represents a hydrogen atom; and A represents C--Y in which Y represents a halogen atom, a lower alkyl or lower alkoxy group which may be substituted by one or more halogen atoms, or a protected or unprotected hydroxyl group.

    摘要翻译： PCT No.PCT / JP97 / 00317 Sec。 371日期：1998年8月10日 102（e）1998年8月10日PCT PCT 1997年2月7日提交PCT公布。 第WO97 / 29102号PCT公告 日期：1997年8月14日本发明涉及由通式[1]表示的喹诺酮 - 羧酸衍生物或其盐：本发明化合物优选为其中R2表示取代或未取代的环烷基的化合物 ; R3表示选自氢原子，卤素原子，取代或未取代的低级烷基或低级烷氧基中的至少一种，被保护或未被保护的羟基或氨基; R4表示氢原子或取代或未取代的低级烷基; R5和R6各自表示氢原子; 并且A表示其中Y表示卤素原子，可被一个或多个卤素原子取代的低级烷基或低级烷氧基或被保护或未被保护的羟基的C-Y。

    Solid detergent composition based on N-acyl sodium salt
    10.
    发明授权
    Solid detergent composition based on N-acyl sodium salt 失效
    基于N-酰基钠盐的固体洗涤剂组合物

    公开(公告)号：US5326493A

    公开(公告)日：1994-07-05

    申请号：US985256

    申请日：1992-12-03

    申请人： Masahiro Takahata ,  Toshio Nozaki ,  Koichi Yoshimura

    发明人： Masahiro Takahata ,  Toshio Nozaki ,  Koichi Yoshimura

    IPC分类号： A61K8/00 ,  A61K8/34 ,  A61K8/36 ,  A61K8/44 ,  A61Q5/02 ,  A61Q19/10 ,  C11D1/10 ,  C11D3/20 ,  C11D10/02 ,  C11D10/04 ,  C11D17/00 ,  C11D17/02 ,  C11D3/33

    CPC分类号： C11D3/0094 ,  C11D1/10 ,  C11D10/042 ,  C11D3/2013

    摘要： A solid detergent composition is disclosed, which comprises the following components (A) and (B):(A) an N-acyl compound represented by the following formula (1)R.sup.1 CONH(CH.sub.2).sub.2 COONa (1) wherein R.sup.1 CO represents a straight chain acyl group having 10 to 16 carbon atoms; and(B) one or more compounds selected from higher fatty acids and higher alcohols. This solid detergent composition is low-irritative and excellent in foaming properties and foam texture, gives no squeaky feel during and after rinsing and imparts a smooth feel to skin. It is highly suitable, in particular, for cleansing the skin.

    摘要翻译： 公开了一种固体洗涤剂组合物，其包含以下组分（A）和（B）：（A）由下式（1）表示的N-酰基化合物：R1CONH（CH2）2COONa（1）其中R1CO表示直链 具有10至16个碳原子的酰基; 和（B）一种或多种选自高级脂肪酸和高级醇的化合物。 该固体洗涤剂组合物具有低刺激性和发泡性和泡沫质地优异，在漂洗期间和之后不产生吱吱声，并赋予皮肤光滑的感觉。 特别适用于清洁皮肤。