公开(公告)号：US5311039A

公开(公告)日：1994-05-10

申请号：US689222

申请日：1991-04-22

申请人： Masakazu Kimura ,  Toshihiko Kondo

发明人： Masakazu Kimura ,  Toshihiko Kondo

IPC分类号： H01L23/525 ,  H01L29/04

CPC分类号： H01L27/1021 ,  H01L23/5252 ,  H01L2924/0002 ,  Y10S257/91

摘要： An antifuse memory cell having a P.sup.+ polysilicon doping in a region directly under an intrinsic silicon programming layer. The P.sup.+ polysilicon region is surrounded by an N.sup.- polysilicon doped region, and the two regions are sandwiched between layers of silicon dioxide insulation. The interface between the two regions is a P-N junction, in fact, a diode. The diode does not suffer from a diffusion current that increases with increasing levels of N.sup.- doping, therefore the N.sup.- polysilicon can be heavily doped to yield a very conductive bit line interconnect for a memory matrix. The interconnect line widths can be very narrow, and further microminiaturization is aided thereby. The top metalization is aluminum and serves as a word line interconnect in the memory matrix.

摘要翻译： 具有在本征硅编程层之下的区域中具有P +多晶硅掺杂的反熔丝存储单元。 P +多晶硅区域被N多晶硅掺杂区域包围，并且两个区域夹在二氧化硅绝缘层之间。 两个区域之间的界面是P-N结，实际上是一个二极管。 二极管不会受到随着N-掺杂水平的增加而增加的扩散电流的损害，因此，可以对多晶硅进行重掺杂以产生用于存储器矩阵的非常导电的位线互连。 互连线宽度可以非常窄，从而辅助其进一步微小化。 顶部金属化是铝，并且用作存储器矩阵中的字线互连。

公开(公告)号：US5250846A

公开(公告)日：1993-10-05

申请号：US742808

申请日：1991-08-09

申请人： Toshihiko Kondo

发明人： Toshihiko Kondo

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L29/78 ,  H01L23/00

CPC分类号： H01L23/53271 ,  H01L23/5226 ,  H01L2924/0002

摘要： A semiconductor device having multi-layered leads having a first lead portion including a polycrystalline silicon layer and a titanium silicide layer, and a second lead portion formed over the first lead portion and made up of a polycrystalline silicon layer. An intermediate insulating layer is provided between the first and second lead portions. The intermediate insulation layer and the underlying titanium silicide layer are provided with contact holes aligned with each other so as to allow the polycrystalline silicon of the second lead portion to be in direct contact with the polycrystalline silicon layer of the first lead portion without interposing therebetween the titanium silicide layer at the contact hole portion.

摘要翻译： 一种具有多层引线的半导体器件，具有包括多晶硅层和硅化钛层的第一引线部分和形成在第一引线部分上并由多晶硅层构成的第二引线部分。 中间绝缘层设置在第一和第二引线部分之间。 中间绝缘层和下面的钛硅化物层设置有彼此对准的接触孔，以便允许第二引线部分的多晶硅与第一引线部分的多晶硅层直接接触，而不插入其间 接触孔部分处的硅化钛层。

公开(公告)号：US20090122013A1

公开(公告)日：2009-05-14

申请号：US12092091

申请日：2005-10-31

申请人： Toshihiko Kondo

发明人： Toshihiko Kondo

IPC分类号： G06F3/02

CPC分类号： G06F3/0224 ,  G06F3/0202 ,  G06F3/0489 ,  G09B13/02 ,  G09F3/00

摘要： A label having an identifier 41L is applied to the upper left corner of the key top of each character key in a left hand region of a keyboard device. A label having an identifier 41R is applied to the upper right corner of the key top of each character key in a right hand region. The identifier 41L is a mark of a reversed L shape and the identifier 41R is a mark of a mirror image pattern of the identifier 41L. Further, different colors are applied to the identifiers 41L and 41R depending on regions for individual fingers. As a consequence, the identifiers 41L and 41R have a function to visually display information representing which hand is to be used to press a key and information representing which finger is to be used to press the key. The keyboard device enables a user to naturally understand the arrangement of the keys and the use of the fingers.

摘要翻译： 具有标识符41L的标签被施加到键盘装置的左手区域中的每个字符键的键顶部的左上角。 具有标识符41R的标签被应用于右手区域中每个字符键的键顶的右上角。 标识符41L是反转的L形的标记，标识符41R是标识符41L的镜像图案的标记。 此外，取决于各个手指的区域，不同的颜色被应用于标识符41L和41R。 结果，标识符41L和41R具有在视觉上显示表示要使用哪个手来按下键的信息的功能和表示使用哪个手指按下该键的信息。 键盘装置使用户能够自然地理解键的布置和手指的使用。

公开(公告)号：US5191402A

公开(公告)日：1993-03-02

申请号：US531672

申请日：1990-06-01

申请人： Toshihiko Kondo ,  Kazuo Tanaka ,  Hirofumi Yasuda

发明人： Toshihiko Kondo ,  Kazuo Tanaka ,  Hirofumi Yasuda

IPC分类号： G11C17/12 ,  H01L21/768 ,  H01L23/532 ,  H01L27/112 ,  H01L29/423

CPC分类号： H01L29/4232 ,  G11C17/12 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76897 ,  H01L23/53223 ,  H01L23/53271 ,  H01L27/112 ,  H01L2924/0002

摘要： A semiconductor device includes a substrate, first insulating film carried on the substrate, first wiring layer carried on the first insulating film and an interlayer insulating film overlying the first wiring layer and first insulating film. The interlayer insulating film has a top portion overlying the first wiring layer and a pair of sidewall portions. The sidewall portions of the interlayer insulating film overlie the first insulating film and the sides of the first wiring layer. The sidewall portions have progressively increasing width in progressing towards the substrate. The device also includes a second wiring layer which extends from overlying part of the top portion of the interlayer insulating film to and in contact with an exposed portion of the substrate adjacent to the first insulating film.

摘要翻译： 半导体器件包括：衬底，承载在衬底上的第一绝缘膜，承载在第一绝缘膜上的第一布线层和覆盖第一布线层和第一绝缘膜的层间绝缘膜。 层间绝缘膜具有覆盖第一布线层的顶部和一对侧壁部分。 层间绝缘膜的侧壁部分覆盖第一绝缘膜和第一布线层的侧面。 侧壁部分朝着衬底进行逐渐增加的宽度。 该器件还包括第二布线层，其从层间绝缘膜的顶部的覆盖部分延伸到邻近第一绝缘膜的基板的暴露部分并与之接触。

公开(公告)号：US06843645B2

公开(公告)日：2005-01-18

申请号：US10333024

申请日：2001-06-05

申请人： Keiichi Terada ,  Toshihiko Kondo ,  Yasumasa Kurihara ,  Koichi Kato ,  Takahiro Kinoshita

发明人： Keiichi Terada ,  Toshihiko Kondo ,  Yasumasa Kurihara ,  Koichi Kato ,  Takahiro Kinoshita

IPC分类号： F04D13/02 ,  F04D29/42 ,  F04B39/10 ,  F04B1/04 ,  F04B19/00

CPC分类号： F04D29/20 ,  F04D13/027 ,  F04D29/426

摘要： A magnet pump includes a synthetic resin casing, divided into a front casing and a rear casing and configured to internally form an impeller housing chamber and a magnet can housing chamber contiguous thereto, having an inlet and an outlet for a target fluid to be transferred. The casing forms an eddy chamber at a position for dividing the front casing and the rear casing along the outer rim of the impeller housing chamber to surround the outer rim of the impeller. The eddy chamber has overhangs formed at an entry of the eddy chamber hanging over from both sides in the rotational-axis direction of the impeller.

摘要翻译： 磁力泵包括合成树脂壳体，分为前壳体和后壳体，并且构造成内部形成与其相邻的叶轮容纳室和磁体容纳室，具有用于要传送的目标流体的入口和出口。 壳体在用于将前壳体和后壳体沿着叶轮容纳室的外缘分隔以围绕叶轮的外缘的位置处形成涡流室。 涡流室具有在涡轮的入口处形成的突出部，涡旋室的两侧在叶轮的旋转轴线方向上悬挂着。

公开(公告)号：US06555670B1

公开(公告)日：2003-04-29

申请号：US09965599

申请日：2001-09-26

申请人： Akira Aizawa ,  Akiko Kawakami ,  Toshihiko Kondo

发明人： Akira Aizawa ,  Akiko Kawakami ,  Toshihiko Kondo

IPC分类号： C07H2104

CPC分类号： C07K14/47 ,  A61K38/00

摘要： The invention provides a gene specifically expressed in haploid cells of the testis. The gene is located on the X-chromosome of a mammal, is specifically expressed in haploid cells of the testis, has a base sequence which can hybridize, under stringent conditions, with DNA including a base sequence in SEQ ID NO: 1, and encodes a protein including an amino acid sequence having a homology of at least 25% with an amino acid sequence encoded by the drosophila gcl gene.

摘要翻译： 本发明提供了在睾丸的单倍体细胞中特异表达的基因。 该基因位于哺乳动物的X染色体上，在睾丸的单倍体细胞中特异性表达，具有可在严格条件下与包含SEQ ID NO：1中的碱基序列的DNA杂交的碱基序列，并编码 包括与果蝇gcl基因编码的氨基酸序列具有至少25％的同源性的氨基酸序列的蛋白质。

公开(公告)号：US5322815A

公开(公告)日：1994-06-21

申请号：US83473

申请日：1993-06-30

申请人： Toshihiko Kondo

发明人： Toshihiko Kondo

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L29/78 ,  H01L21/283

CPC分类号： H01L23/53271 ,  H01L23/5226 ,  H01L2924/0002

摘要： A semiconductor device having multi-layered leads having a first lead portion including a polycrystalline silicon layer and a titanium silicide layer, and a second lead portion formed over the first lead portion and made up of a polycrystalline silicon layer. An intermediate insulating layer is provided between the first and second lead portions. The intermediate insulation layer and the underlying titanium silicide layer are provided with contact holes aligned with each other so as to allow the polycrystalline silicon of the second lead portion to be in direct contact with the polycrystalline silicon layer of the first lead portion without interposing therebetween the titanium silicide layer at the contact hole portion.

摘要翻译： 一种具有多层引线的半导体器件，具有包括多晶硅层和硅化钛层的第一引线部分和形成在第一引线部分上并由多晶硅层构成的第二引线部分。 中间绝缘层设置在第一和第二引线部分之间。 中间绝缘层和下面的钛硅化物层设置有彼此对准的接触孔，以便允许第二引线部分的多晶硅与第一引线部分的多晶硅层直接接触，而不插入其间 接触孔部分处的硅化钛层。

公开(公告)号：US4524562A

公开(公告)日：1985-06-25

申请号：US368445

申请日：1982-04-14

申请人： Yoshio Yagi ,  Toshihiko Kondo ,  Norio Matsubara ,  Shoichiro Miyazaki ,  Hajime Kashiyama ,  Makoto Shibata

发明人： Yoshio Yagi ,  Toshihiko Kondo ,  Norio Matsubara ,  Shoichiro Miyazaki ,  Hajime Kashiyama ,  Makoto Shibata

IPC分类号： B65B11/56 ,  B65B25/14 ,  B65B7/14 ,  B65B11/54 ,  B65B25/24

CPC分类号： B65B25/148

摘要： A method and apparatus for making a cylindrical package in which a cylindrically shaped coil of a long steel strip having a peripheral surface, two end surfaces and a hollow cylindrical center is completely wrapped with a wrapping sheet material so as to have neatly folded closures on both end surfaces with a ring member inserted into the cylindrical hollow center of the coil. At first the wrapping sheet is wrapped around the coil so as to project from either end of the coil by a length l greater than the thickness t between the outermost layer and the innermost layer of the coil. The projecting portions are folded onto the end surfaces by pusher plates with pleat forming rods provided therebetween to form crease lines. The pleated portions of the sheet are flattened onto the folded sheet by the sliding action of pusher plates, and then a ring member is fitted into the cylindrical hollow center of the coil at either end with the edges of the folded sheet pressed underneath so that the wrapping is completed without use of an adhesive.

摘要翻译： 一种用于制造圆柱形包装的方法和装置，其中具有圆周表面，两个端面和中空圆柱形中心的长钢带的圆柱形线圈用包装片材完全包裹，以便在两者上具有整齐地折叠的封闭 端面，其中环构件插入到线圈的圆柱形中空中心。 首先，将包装片缠绕在线圈上，从而从线圈的任一端突出长度l大于线圈的最外层和最内层之间的厚度t。 突出部分通过设置在其间的褶形成形杆的推动板折叠在端面上，以形成折痕线。 片材的褶皱部分通过推动板的滑动作用而被压平在折叠的片材上，然后在任一端将环形部件装配到线圈的圆柱形中空中心，并将折叠片材的边缘压在下面，使得 在不使用粘合剂的情况下完成包装。

公开(公告)号：US08384676B2

公开(公告)日：2013-02-26

申请号：US12092091

申请日：2005-10-31

申请人： Toshihiko Kondo

发明人： Toshihiko Kondo

IPC分类号： G06F3/02 ,  G09G5/00

CPC分类号： G06F3/0224 ,  G06F3/0202 ,  G06F3/0489 ,  G09B13/02 ,  G09F3/00

摘要： A label having an identifier 41L is applied to the upper left corner of the key top of each character key in a left hand region of a keyboard device. A label having an identifier 41R is applied to the upper right corner of the key top of each character key in a right hand region. The identifier 41L is a mark of a reversed L shape and the identifier 41R is a mark of a mirror image pattern of the identifier 41L. Further, different colors are applied to the identifiers 41L and 41R depending on regions for individual fingers. As a consequence, the identifiers 41L and 41R have a function to visually display information representing which hand is to be used to press a key and information representing which finger is to be used to press the key. The keyboard device enables a user to naturally understand the arrangement of the keys and the use of the fingers.

摘要翻译： 具有标识符41L的标签被施加到键盘装置的左手区域中的每个字符键的键顶部的左上角。 具有标识符41R的标签被应用于右手区域中每个字符键的键顶的右上角。 标识符41L是反转的L形的标记，标识符41R是标识符41L的镜像图案的标记。 此外，取决于各个手指的区域，不同的颜色被应用于标识符41L和41R。 结果，标识符41L和41R具有在视觉上显示表示要使用哪个手来按下键的信息的功能和表示使用哪个手指按下该键的信息。 键盘装置使用户能够自然地理解键的布置和手指的使用。

公开(公告)号：US06730428B1

公开(公告)日：2004-05-04

申请号：US09936992

申请日：2001-12-27

申请人： Toshihiko Kondo ,  Hideki Sugiyama

发明人： Toshihiko Kondo ,  Hideki Sugiyama

IPC分类号： H01M1050

CPC分类号： H01M10/4242 ,  H01M10/06 ,  H01M10/44 ,  H01M10/54 ,  Y02E60/126 ,  Y02W30/84

摘要： The lead sulfate (PbSO4) deposited on the surface of the positive electrode 18 or negative electrode 20 is reduced owing to the flow of the pulsating direct current from the positive electrode 18 toward the negative electrode 20 in the sullation removing step 34, while at the same time the positive electrode 18 of the lead-acid storage battery 10 is activated through the electrochemical doping in which the carbon suspension obtained by the electrolytic oxidation of the carbon positive electrode is used as at least a part of the battery electrolyte of the lead-acid storage battery 10 in the electrode activating step 40. Therefore, it is possible to select, as recyclable batteries, a wider range of used lead-acid storage batteries, so that even an used lead-acid storage battery which has a battery electrolyte whose specific gravity is considerably lowered and which accordingly appears to suffer from the sulfation can be recovered to have substantially the same capacity as that of a new lead-acid storage battery. Thus, the invention permits a wider range of the used lead-acid storage batteries to be recycled.

摘要翻译： 沉积在正电极18或负电极20的表面上的硫酸铅（PbSO 4）由于在反作用去除步骤34中脉动直流从正电极18向负电极20的流动而减少，而在 铅酸蓄电池10的正极18同时通过电化学掺杂活化，其中通过碳正电极的电解氧化得到的碳悬浮用作铅 - 蓄电池10的电极电解质的至少一部分， 因此，可以选择更广泛的使用过的铅酸蓄电池作为可回收电池，使得即使使用具有电池电解质的二次铅蓄电池 比重显着降低，因此看起来会受到硫酸化的影响可以恢复到具有与新的l相同的容量 酸蓄电池。 因此，本发明允许更广泛使用的铅酸蓄电池被再循环。