摘要:
A temperature sensor (100) includes a heat-sensitive element (21) having a thermistor sintered-body (22), an insulating support (31), an insulation sheath (41) and a housing tube (11). The insulating support (31) is in contact with the rear end of the heat-sensitive element (21) and the insulation sheath (41) is in contact with the rear end of the insulating support (31). The housing tube (11) accommodates the heat-sensitive element (21), the insulating support (31) and the insulation sheath (41). The housing tube (11) includes a sheath accommodation portion (14) which accommodates the insulation sheath (41) and a distal accommodation portion (13). The distal accommodation portion (13) is located toward the distal end of the housing tube (11) with respect to the sheath accommodation portion (14), is smaller in outside diameter than the sheath accommodation portion (14), and accommodates at least half of the insulating support (31) as measured from the axially distal end of the insulating support (31).
摘要:
A semiconductor device includes a first pMISFET region having an Si channel, a second pMISFET region having an Si channel and an nMISFET region having an Si channel. First SiGe layers which apply first compression strain to the Si channel are embedded and formed in the first pMISFET region to sandwich the Si channel thereof and second SiGe layers which apply second compression strain different from the first compression strain to the Si channel are embedded and formed in the second pMISFET region to sandwich the Si channel thereof.
摘要:
In the simulation method of the present invention; one parameter is first selected from a plurality of parameters that relate to input/output characteristics. Next, regarding setting lines provided in a file for setting necessary choices from among a plurality of choices for a selected parameter, it is determined to either set choices by means of comment symbols that cause non-execution of the relevant lines, or set choices by means of identification codes, which are identifiers common to chips in which the same choice are to be set. When choices are to be set by means of comment symbols, the comment symbols of the setting lines of the necessary choices among the plurality of choices are deleted to make these setting lines effective. Alternatively, when choices are to be set by means of identification codes, the identification codes included in setting lines are rewritten to information for setting to the necessary choices. Finally, the simulation is executed.
摘要:
An ink jet recording apparatus includes: a head body provided with a nozzle and a pressure chamber; an actuator including a piezoelectric element and an electrode for applying a voltage across the piezoelectric element; and a driving circuit for supplying a driving signal to the electrode of the actuator. The driving circuit always supplies an auxiliary pulse signal in every printing cycle. When ink is to be discharged, the driving circuit supplies, after the auxiliary pulse signal is supplied, an ink discharge pulse signal for driving the actuator so that the ink is discharged and so that an ink meniscus vibration in the nozzle is resonant with that caused by the auxiliary pulse signal.
摘要:
A process for producing synthetic quartz glass using a burner composed of a plurality of concentric nozzles involves the steps of feeding a silica-forming raw material gas and a fluorine compound gas to a reaction zone from a center nozzle, feeding oxygen gas from a second nozzle outside the center nozzle, and feeding oxygen gas and/or hydrogen gas from a third nozzle. The silica-forming raw material gas is hydrolyzed to form fine particles of silica, which particles are deposited on a rotatable substrate so as to form a porous silica matrix, which is then fused to give the quartz glass. The flow rate of the oxygen gas fed from the second nozzle and the flow rate of the raw material gas are controlled so as to provide a 1.1- to 3.5-fold stoichiometric excess of oxygen. The excess oxygen suppresses Si—Si bond formation in the quartz glass, enabling the production of synthetic quartz glass having a high transmittance in the vacuum ultraviolet region.
摘要:
In order to provide a miniaturized ink jet head having a piezoelectric actuator 21 by which ink in a pressure chamber 3 is emitted and to improve its productivity and reliability, a vibration plate 22 is made up of two layers having different Young's moduli, i.e., a layer 27 having a smaller Young's modulus and a layer 28 having a greater Young's modulus. Further, the Young's modulus of each of the layers 27 and 28 is set at values ranging from 50 GPa to 350 GPa and the total thickness of the vibration plate 22 is set at values ranging from 1 &mgr;m to 7 &mgr;m.
摘要:
In order to provide a miniaturized ink jet head having a piezoelectric actuator 21 by which ink in a pressure chamber 3 is emitted and to improve its productivity and reliability, a vibration plate 22 is made up of two layers having different Young's moduli, i.e., a layer 27 having a smaller Young's modulus and a layer 28 having a greater Young's modulus. Further, the Young's modulus of each of the layers 27 and 28 is set at values ranging from 50 GPa to 350 GPa and the total thickness of the vibration plate 22 is set at values ranging from 1 &mgr;m to 7 &mgr;m.
摘要:
A power transmission belt having a center belt with a length, an inside surface, and an outside surface. Upper and lower blocks are provided and each has a leading face, a trailing face, and laterally oppositely facing pulley-engaging side surfaces. The upper and lower blocks are connected to each other to maintain the upper block, lower block and center belt together in an operative relationship without penetrating the center belt. At least one of the pulley-engaging side surfaces on at least one of the upper and lower blocks is uninterrupted between the leading and trailing faces on the one of the upper and lower blocks so that the at least one side surface can engage a cooperating pulley surface along an uninterrupted line between the leading and trailing faces of the at least one side surface.
摘要:
The fine-line pattern forming method is to form a pattern by transferring the pattern formed on the blanket of which surface is covered with an elastic material mainly composed of silicone resin, on a substrate on which a tack layer is formed. As an example thereof, the forming method of cathode-ray tube anode comprises a step of filling the groove of an intaglio with a graphite ink, a step of transferring the graphite ink in the groove of the intaglio on a blanket of which surface is covered with an elastic material mainly composed of silicone resin, a step of forming a tack layer on a substrate, a step of transferring and printing the pattern transferred on the blanket onto the substrate, a step of filling the groove of the intaglio with a phosphor ink, a step of transferring the ink in the groove of the intaglio on the blanket of which surface is covered with an elastic material mainly composed of silicone resin, a step of forming a tack layer on the substrate, a step of transferring and printing the pattern transferred on the blanket on the substrate on which the graphite pattern has been formed, a step of transferring an aluminum thin film possessing multiple pores as a metal-backed layer so as to cover a black matrix and a phosphor layer, and a step of firing the substrate covered with the aluminum thin film. The graphite ink comprises graphite powder, vehicle containing depolymerization type organic binder, and organic acid metal salt. The phosphor ink comprises phosphor powder and vehicle containing polymerization type organic binder.
摘要:
A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film.