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公开(公告)号：US4869995A
公开(公告)日：1989-09-26
申请号：US200121
申请日：1988-05-27
IPC分类号： G03F7/039
CPC分类号： G03F7/039
摘要： A positive type photosensitive resinous composition which is specifically useful in a photoresist for printed circuit board, integrated circuit board and the like and in a lithographic plate is provided.The resinous composition is characterized by comprising a resin having in its side chains or at the end portions of main chain at least one iminosulfonate group of the formula: ##STR1## in which R.sub.1 and R.sub.2 each is selected from hydrogen atom, an alkyl, an acyl, a phenyl, a naphthyl, an anthryl and a benzyl group, or R.sub.1 and R.sub.2 may, taken together, form an alicyclic ring, the iminosulfonate content being 1.5.times.10.sup.-4 to 2.5.times.10.sup.-3 equivalent/g and the resin being free from glycidyl group or the like which may cause polymerization in the presence of sulfonic acid.
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公开(公告)号：US5213946A
公开(公告)日：1993-05-25
申请号：US716977
申请日：1991-06-18
IPC分类号： G03F7/039 , H01L21/027 , H01L21/30
CPC分类号： G03F7/039 , Y10S430/106
摘要： A novel positive type photosensitive resinous composition comprising a base resin having in at least one side chain or at an end portion of its main chain, an iminosulfonate group of the formula: ##STR1## in which R.sub.1 and R.sub.2 are the same or different groups and each represents hydrogen atom, alkyl, acyl, phenyl, naphthyl, anthryl or benzyl group and R.sub.1 and R.sub.2, taken together with the carbon atom, may be an alicyclic ring, the composition further comprising a group containing an acid-decomposable bond, the content of said iminosulfonate group being 1.times.10.sup.-5 to 3.times.10.sup.-3 equivalent/g of the base resin. The present composition, when irradiated with radiation with 200 to 400 nm wavelength, can generate strong sulfonic acid groups, and is specifically useful as a photoresist for a circuit board, integrated circuit and the like.
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3.发明授权Method for forming resist pattern by irradiating a resist coating on a substrate, contacting the resist with organic solvent vapor and removing the irradiated portion 失效通过在基板上照射抗蚀剂涂层来形成抗蚀剂图案的方法，使抗蚀剂与有机溶剂蒸气接触并除去照射部分
公开(公告)号：US5683857A
公开(公告)日：1997-11-04
申请号：US686921
申请日：1996-08-01
CPC分类号： G03F7/38 , G03F7/0758
摘要： A method for forming a resist pattern which comprises irradiating an active light ray to a resist obtained by coating a photosensitive resin composition containing a compound capable of generating an acid due to irradiation of the active light ray and a silyloxy compound in a binder resin on a substrate through a pattern mask to decompose the silyloxy compound due to the acid generated at the irradiation region to form a silanol compound, and after removing the silanol compound, removing a film at the photosensitive region due to an oxygen plasma, a removal of said silanol compound being conducted by bringing the film after irradiation of the active light ray into contact with volatile organic solvent vapor having a boiling photosensitive composition.
摘要翻译： 一种抗蚀剂图案的形成方法，其特征在于，将活性光线照射到通过在粘合剂树脂中涂布含有能够通过活性光线照射产生酸的化合物和硅氧烷化合物的感光性树脂组合物而得到的抗蚀剂 底物通过图案掩模，由于在照射区域产生的酸而分解甲硅烷氧基化合物以形成硅烷醇化合物，并且在除去硅烷醇化合物之后，由于氧等离子体而在感光区域除去膜，除去所述硅烷醇 通过使活性光线照射之后的膜与具有沸点感光组合物的挥发性有机溶剂蒸气接触来进行化合物。
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公开(公告)号：US5278029A
公开(公告)日：1994-01-11
申请号：US888901
申请日：1992-05-26
IPC分类号： G03F7/029 , G03F7/26 , G03F7/36 , G03F7/38 , H01L21/027 , H01L21/302 , H01L21/3065
CPC分类号： G03F7/265
摘要： A method for forming a resist pattern comprising applying onto a base plate a resinous composition comprising a compound capable of generating an acid when irradiated with actinic rays to obtain a photosensitive layer, exposing the thus formed layer through a pattern mask to actinic rays, applying onto the whole surface of the layer an alkoxysilane gas and subjecting the thus treated layer to dry etching to remove unexposed area of said layer. By the adoption of the present method, a very fine resist pattern which is useful for the preparation of semiconductor element, magnetic bubble memory element and the like, can be easily and economically prepared.
摘要翻译： 一种形成抗蚀剂图案的方法，包括在基板上施加包含能够在用光化射线照射时能够产生酸的化合物的树脂组合物，以获得感光层，将由此形成的层通过图案掩模暴露于光化射线，施加到 该层的整个表面是烷氧基硅烷气体，并对这样处理的层进行干蚀刻以去除所述层的未曝光区域。 通过采用本方法，可以容易且经济地制备可用于制备半导体元件，磁性气泡存储元件等的非常精细的抗蚀剂图案。
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公开(公告)号：US06511786B2
公开(公告)日：2003-01-28
申请号：US09924093
申请日：2001-08-08
IPC分类号： G03F7004
CPC分类号： G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/108
摘要： A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom; and R7 is a protecting group released by an acid.
摘要翻译： 本发明的图案形成材料包含含有由化学式1表示的第一单元和由化学式2表示的第二单元的聚合物和酸产生剂：其中R1和R2相同或不同并选自 烷基，氯原子和含有氯原子的烷基; R3，R4，R5和R6是氢原子或氟原子，其中至少一个是氟原子; 而R7是由酸释放的保护基。
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公开(公告)号：US06261736B1
公开(公告)日：2001-07-17
申请号：US09416049
申请日：1999-10-12
IPC分类号： G03C173
CPC分类号： G03F7/2022 , G03F7/0045 , G03F7/039 , G03F7/265 , G03F7/38 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/12 , Y10S430/124 , Y10S522/904
摘要： The pattern forming material of the present invention includes a polymer having a group which generates an acid when the polymer is irradiated with an energy beam or heated and a compound which generates a base when the compound is irradiated with an energy beam. The polymer is a binary polymer or a polymer of a higher degree obtained by polymerizing another group with a compound represented by the following general formula: where R1 indicates a hydrogen atom or an alkyl group, and R2 and R3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group, or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group.
摘要翻译： 本发明的图案形成材料包括具有当聚合物被能量束照射或加热时产生酸的基团的聚合物和当化合物被能量束照射时产生碱的化合物。 聚合物是通过使另一个基团与下列通式表示的化合物聚合得到的较高程度的二元聚合物或聚合物：其中R1表示氢原子或烷基，R2和R3独立地表示氢原子， 烷基，苯基或烯基，或者一起表示环状烷基，环状烯基，具有苯基的环状烷基或具有苯基的环状链烯基。
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公开(公告)号：US5928840A
公开(公告)日：1999-07-27
申请号：US743604
申请日：1996-11-04
CPC分类号： G03F7/039 , C08F8/30 , G03F7/0045 , G03F7/38
摘要： A patterning material includes a polymer represented by a general formula: ##STR1## wherein R.sub.1 indicates a hydrogen atom or an alkyl group; R.sub.2 indicates a hydrophobic protecting group which is easily desorbed through a function of an acid; R.sub.3 indicates a hydrogen atom or an alkyl group; R.sub.4 and R.sub.5 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group, or together indicate a cyclic alkyl group, a cyclic alkenyl group or a cyclic alkyl or alkenyl group having a phenyl group; x satisfies a relationship of 0
摘要翻译： 图案形成材料包括由通式表示的聚合物：其中R1表示氢原子或烷基; R2表示通过酸的功能容易解吸的疏水性保护基; R3表示氢原子或烷基; R4和R5独立地表示氢原子，烷基，苯基或烯基，或者一起表示环状烷基，环状烯基或具有苯基的环状烷基或烯基; x满足0
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公开(公告)号：US06576398B2
公开(公告)日：2003-06-10
申请号：US09799068
申请日：2001-03-06
IPC分类号： G03C173
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/115 , Y10S430/146
摘要： In the pattern formation method of this invention, a resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator, wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; and R3 is a protecting group released by an acid. Then, the resist film is irradiated with exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.
摘要翻译： 在本发明的图案形成方法中，通过在基板上涂布含有由化学式1表示的第一单元和由化学式2表示的第二单元的聚合物的图案形成材料形成抗蚀剂膜， 发电机，其中R1和R2相同或不同，选自烷基，氯原子和包括氯原子的烷基; R3是由酸释放的保护基。 然后，用曝光的1nm至30nm波长或110nm至180nm波段的曝光光照射抗蚀剂膜，以进行图案曝光，并且在图案曝光后通过显影抗蚀剂膜形成抗蚀剂图案。
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公开(公告)号：US06376154B2
公开(公告)日：2002-04-23
申请号：US09835441
申请日：2001-04-17
IPC分类号： G03F736
CPC分类号： G03F7/265 , G03F7/0045 , G03F7/039
摘要： A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: wherein R1 indicates a hydrogen atom or an alkyl group; R2 and R3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0
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公开(公告)号：US06753132B2
公开(公告)日：2004-06-22
申请号：US10034366
申请日：2002-01-03
IPC分类号： G03F700
CPC分类号： G03F7/0392 , G03F7/0046 , Y10S430/108 , Y10S430/168
摘要： A resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: Chemical Formula 1: Chemical Formula 2: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom; R3 is a protecting group released by an acid; and m is an integer of 0 through 5. Subsequently, the resist film is irradiated with exposing light of a wavelength shorter than a 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.
摘要翻译： 通过在基板上涂布含有由化学式1表示的第一单元和化学式2表示的第二单元的聚合物的图案形成材料和酸产生剂，形成抗蚀剂膜：化学式1：化学式2 其中R1和R2相同或不同，选自烷基，氯原子和含氟原子的烷基; R3是由酸释放的保护基; m为0〜5的整数。接着，对曝光后的光的波长短于180nm的曝光光照射抗蚀剂膜，通过在图案曝光后使抗蚀剂膜显影而形成抗蚀剂图案。
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