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公开(公告)号：US07785977B2
公开(公告)日：2010-08-31
申请号：US12690480
申请日：2010-01-20
IPC分类号： H01L21/02
摘要： A thin film capacitor including a substrate, a capacitor portion having an upper conductor, a lower conductor, and a dielectric thin film, and a resin protective layer for protecting the capacitor portion. A barrier layer is interposed between the capacitor portion and the resin protective layer. The barrier layer includes a crystalline dielectric barrier layer formed in contact with the capacitor portion and having the same composition system as the dielectric thin film, and an amorphous inorganic barrier layer formed on the surface of the crystalline dielectric barrier layer and composed of silicon nitride having non-conductivity. The inorganic barrier layer prevents deterioration in the properties of the dielectric thin film by blocking diffusion of the constituent elements of the inorganic barrier layer toward the capacitor portion.
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公开(公告)号：US20100118468A1
公开(公告)日：2010-05-13
申请号：US12690480
申请日：2010-01-20
摘要： A thin film capacitor including a substrate, a capacitor portion having an upper conductor, a lower conductor, and a dielectric thin film, and a resin protective layer for protecting the capacitor portion. A barrier layer is interposed between the capacitor portion and the resin protective layer. The barrier layer includes a crystalline dielectric barrier layer formed in contact with the capacitor portion and having the same composition system as the dielectric thin film, and an amorphous inorganic barrier layer formed on the surface of the crystalline dielectric barrier layer and composed of silicon nitride having non-conductivity. The inorganic barrier layer prevents deterioration in the properties of the dielectric thin film by blocking diffusion of the constituent elements of the inorganic barrier layer toward the capacitor portion.
摘要翻译： 包括基板，具有上导体的电容器部分，下导体和电介质薄膜的薄膜电容器和用于保护电容器部分的树脂保护层。 在电容器部分和树脂保护层之间插入阻挡层。 阻挡层包括形成为与电容器部分接触并且具有与电介质薄膜相同的组成系统的结晶介质阻挡层，以及形成在结晶介质阻挡层的表面上并由氮化硅构成的无定形无机阻挡层， 非导电性。 无机阻挡层通过阻止无机阻挡层的构成元件朝向电容器部分的扩散来防止电介质薄膜的性质的劣化。
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公开(公告)号：US07675139B2
公开(公告)日：2010-03-09
申请号：US11865873
申请日：2007-10-02
IPC分类号： H01L29/92
摘要： A thin film capacitor including a substrate, a capacitor portion having an upper conductor, a lower conductor, and a dielectric thin film, and a resin protective layer for protecting the capacitor portion. A barrier layer is interposed between the capacitor portion and the resin protective layer. The barrier layer includes a crystalline dielectric barrier layer formed in contact with the capacitor portion and having the same composition system as the dielectric thin film, and an amorphous inorganic barrier layer formed on the surface of the crystalline dielectric barrier layer and composed of silicon nitride having non-conductivity. The inorganic barrier layer prevents deterioration in the properties of the dielectric thin film by blocking diffusion of the constituent elements of the inorganic barrier layer toward the capacitor portion.
摘要翻译： 包括基板，具有上导体的电容器部分，下导体和电介质薄膜的薄膜电容器和用于保护电容器部分的树脂保护层。 在电容器部分和树脂保护层之间插入阻挡层。 阻挡层包括形成为与电容器部分接触并且具有与电介质薄膜相同的组成系统的结晶介质阻挡层，以及形成在结晶介质阻挡层的表面上并由氮化硅构成的无定形无机阻挡层， 非导电性。 无机阻挡层通过阻止无机阻挡层的构成元件朝向电容器部分的扩散来防止电介质薄膜的性质的劣化。
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公开(公告)号：US20080164563A1
公开(公告)日：2008-07-10
申请号：US11865873
申请日：2007-10-02
摘要： A thin film capacitor including a substrate, a capacitor portion having an upper conductor, a lower conductor, and a dielectric thin film, and a resin protective layer for protecting the capacitor portion. A barrier layer is interposed between the capacitor portion and the resin protective layer. The barrier layer includes a crystalline dielectric barrier layer formed in contact with the capacitor portion and having the same composition system as the dielectric thin film, and an amorphous inorganic barrier layer formed on the surface of the crystalline dielectric barrier layer and composed of silicon nitride having non-conductivity. The inorganic barrier layer prevents deterioration in the properties of the dielectric thin film by blocking diffusion of the constituent elements of the inorganic barrier layer toward the capacitor portion.
摘要翻译： 包括基板，具有上导体的电容器部分，下导体和电介质薄膜的薄膜电容器和用于保护电容器部分的树脂保护层。 在电容器部分和树脂保护层之间插入阻挡层。 阻挡层包括形成为与电容器部分接触并且具有与电介质薄膜相同的组成系统的结晶介质阻挡层，以及形成在结晶介质阻挡层的表面上并由氮化硅构成的无定形无机阻挡层， 非导电性。 无机阻挡层通过阻止无机阻挡层的构成元件朝向电容器部分的扩散来防止电介质薄膜的性质的劣化。
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公开(公告)号：US20080145996A1
公开(公告)日：2008-06-19
申请号：US11954696
申请日：2007-12-12
IPC分类号： H01L21/02
CPC分类号： H01L28/40 , H01G4/33 , H01L21/0273 , H01L21/31144 , H01L21/31691 , H01L21/32139
摘要： A method for manufacturing a dielectric thin film capacitor without causing cracks in a protective layer which covers a capacitor portion is provided. The method for manufacturing the dielectric thin film capacitor includes a step of forming a tapered resist pattern on a capacitor structure and a dry etching step so as to taper the end portion of the capacitor. Furthermore, a heating treatment is conducted after tapering.
摘要翻译： 提供一种用于制造电介质薄膜电容器而不会在覆盖电容器部分的保护层中产生裂纹的方法。 制造电介质薄膜电容器的方法包括在电容器结构上形成锥形抗蚀剂图案和干蚀刻步骤以使电容器的端部逐渐变细的步骤。 此外，在锥形化之后进行加热处理。
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公开(公告)号：US07898792B2
公开(公告)日：2011-03-01
申请号：US12103234
申请日：2008-04-15
申请人： Yutaka Takeshima , Masanobu Nomura , Takeshi Inao
发明人： Yutaka Takeshima , Masanobu Nomura , Takeshi Inao
CPC分类号： H01G4/228 , H01G4/232 , H01G4/33 , H01L23/5223 , H01L24/11 , H01L27/016 , H01L28/40 , H01L2224/05001 , H01L2224/05008 , H01L2224/05027 , H01L2224/05567 , H01L2224/05655 , H01L2924/00014 , H01L2924/12044 , H01L2924/14 , H01L2924/15787 , H01L2924/3011 , H01L2924/00 , H01L2224/05099
摘要： A thin-film capacitor and a method for making the thin-film capacitor having a structure that can prevent vertical stress acting on outer connecting terminals, such as bumps, from concentrating on electrode layers, and capable of easily increasing the equivalent series resistance to a desired value. The thin-film capacitor includes a substrate, a capacitor unit disposed above the substrate and composed of at least one dielectric thin film and two electrode layers, a protective layer covering at least part of the capacitor unit, a lead conductor electrically connected to one of the electrode layers of the capacitor unit, and a bump disposed above the lead conductor. The lead conductor includes a connecting part disposed in an opening in the protective layer and electrically connected to one of the electrode layers of the capacitor unit, and a wiring part extending over the protective layer. The bump is disposed above the wiring part.
摘要翻译： 薄膜电容器和薄膜电容器的制造方法，其具有能够防止作用在外部连接端子（例如凸块）的垂直应力集中在电极层上的结构，并且能够容易地将等效的串联电阻提高到 所需值。 薄膜电容器包括基板，设置在基板上方并由至少一个电介质薄膜和两个电极层构成的电容器单元，覆盖电容器单元的至少一部分的保护层，电连接到 电容器单元的电极层和设置在引线导体上方的凸块。 引线导体包括设置在保护层的开口中并与电容器单元的电极层中的一个电连接的连接部分和在保护层上延伸的布线部分。 凸块设置在布线部分上方。
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公开(公告)号：US20080186654A1
公开(公告)日：2008-08-07
申请号：US12103234
申请日：2008-04-15
申请人： Yutaka Takeshima , Masanobu Nomura , Takeshi Inao
发明人： Yutaka Takeshima , Masanobu Nomura , Takeshi Inao
IPC分类号： H01G4/33
CPC分类号： H01G4/228 , H01G4/232 , H01G4/33 , H01L23/5223 , H01L24/11 , H01L27/016 , H01L28/40 , H01L2224/05001 , H01L2224/05008 , H01L2224/05027 , H01L2224/05567 , H01L2224/05655 , H01L2924/00014 , H01L2924/12044 , H01L2924/14 , H01L2924/15787 , H01L2924/3011 , H01L2924/00 , H01L2224/05099
摘要： A thin-film capacitor and a method for making the thin-film capacitor having a structure that can prevent vertical stress acting on outer connecting terminals, such as bumps, from concentrating on electrode layers, and capable of easily increasing the equivalent series resistance to a desired value. The thin-film capacitor includes a substrate, a capacitor unit disposed above the substrate and composed of at least one dielectric thin film and two electrode layers, a protective layer covering at least part of the capacitor unit, a lead conductor electrically connected to one of the electrode layers of the capacitor unit, and a bump disposed above the lead conductor. The lead conductor includes a connecting part disposed in an opening in the protective layer and electrically connected to one of the electrode layers of the capacitor unit, and a wiring part extending over the protective layer. The bump is disposed above the wiring part.
摘要翻译： 薄膜电容器和薄膜电容器的制造方法，其具有能够防止作用在外部连接端子（例如凸块）的垂直应力集中在电极层上的结构，并且能够容易地将等效的串联电阻提高到 所需值。 薄膜电容器包括基板，设置在基板上方并由至少一个电介质薄膜和两个电极层构成的电容器单元，覆盖电容器单元的至少一部分的保护层，电连接到 电容器单元的电极层和设置在引线导体上方的凸块。 引线导体包括设置在保护层的开口中并与电容器单元的电极层中的一个电连接的连接部分和在保护层上延伸的布线部分。 凸块设置在布线部分上方。
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8.发明授权Thin-film capacitor having a connecting part of a lead conductor disposed within an opening in a protective layer 有权薄膜电容器具有设置在保护层的开口内的引线导体的连接部分公开(公告)号：US08390982B2
公开(公告)日：2013-03-05
申请号：US13009395
申请日：2011-01-19
申请人： Yutaka Takeshima , Masanobu Nomura , Takeshi Inao
发明人： Yutaka Takeshima , Masanobu Nomura , Takeshi Inao
CPC分类号： H01G4/228 , H01G4/232 , H01G4/33 , H01L23/5223 , H01L24/11 , H01L27/016 , H01L28/40 , H01L2224/05001 , H01L2224/05008 , H01L2224/05027 , H01L2224/05567 , H01L2224/05655 , H01L2924/00014 , H01L2924/12044 , H01L2924/14 , H01L2924/15787 , H01L2924/3011 , H01L2924/00 , H01L2224/05099
摘要： A thin-film capacitor and a method for making the thin-film capacitor having a structure that can prevent vertical stress acting on outer connecting terminals, such as bumps, from concentrating on electrode layers, and capable of easily increasing the equivalent series resistance to a desired value. The thin-film capacitor includes a substrate, a capacitor unit disposed above the substrate and composed of at least one dielectric thin film and two electrode layers, a protective layer covering at least part of the capacitor unit, a lead conductor electrically connected to one of the electrode layers of the capacitor unit, and a bump disposed above the lead conductor. The lead conductor includes a connecting part disposed in an opening in the protective layer and electrically connected to one of the electrode layers of the capacitor unit, and a wiring part extending over the protective layer. The bump is disposed above the wiring part.
摘要翻译： 薄膜电容器和薄膜电容器的制造方法，其具有能够防止作用在外部连接端子（例如凸块）的垂直应力集中在电极层上的结构，并且能够容易地将等效的串联电阻提高到 所需值。 薄膜电容器包括基板，设置在基板上方并由至少一个电介质薄膜和两个电极层构成的电容器单元，覆盖电容器单元的至少一部分的保护层，电连接到 电容器单元的电极层和设置在引线导体上方的凸块。 引线导体包括设置在保护层的开口中并与电容器单元的电极层中的一个电连接的连接部分和在保护层上延伸的布线部分。 凸块设置在布线部分上方。
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公开(公告)号：US08343361B2
公开(公告)日：2013-01-01
申请号：US12813774
申请日：2010-06-11
申请人： Yutaka Takeshima , Masanobu Nomura
发明人： Yutaka Takeshima , Masanobu Nomura
CPC分类号： H01G4/33 , H01G4/228 , H01G4/306 , H01L27/016 , H01L28/91
摘要： A method for producing a thin film laminated capacitor that makes it possible to reduce the number of operations for etching its electrode layers and its dielectric layers. On a substrate, a capacitor part is formed wherein n electrode layers and (n−1) dielectric layers are alternately laminated onto each other, wherein n is 4 or more. The capacitor part is etched from the same side k times. In any ith etching operation, through holes are formed in an amount corresponding to respective ai layers of the electrode layers and the dielectric layers. At least one of ai's is set to 2 or more, and k is made smaller than n−1, thereby making it possible to make the 2nd to nth layers of the electrode layers from the etching starting side exposed at the bottom surfaces of the through holes.
摘要翻译： 一种制造薄膜层压电容器的方法，其可以减少用于蚀刻其电极层及其电介质层的操作次数。 在基板上，形成电容器部，其中n个电极层和（n-1）个介电层交替层叠在一起，其中n为4以上。 电容器部分从同一侧刻蚀k次。 在任何第i蚀刻操作中，以对应于电极层和电介质层的各个层的量形成通孔。 将ai中的至少一个设定为2以上，并使k小于n-1，由此可以使从蚀刻开始侧的第2〜第n层在通孔的底面露出 孔。
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公开(公告)号：US20110110016A1
公开(公告)日：2011-05-12
申请号：US13009395
申请日：2011-01-19
申请人： Yutaka Takeshima , Masanobu Nomura , Takeshi Inao
发明人： Yutaka Takeshima , Masanobu Nomura , Takeshi Inao
IPC分类号： H01G4/06
CPC分类号： H01G4/228 , H01G4/232 , H01G4/33 , H01L23/5223 , H01L24/11 , H01L27/016 , H01L28/40 , H01L2224/05001 , H01L2224/05008 , H01L2224/05027 , H01L2224/05567 , H01L2224/05655 , H01L2924/00014 , H01L2924/12044 , H01L2924/14 , H01L2924/15787 , H01L2924/3011 , H01L2924/00 , H01L2224/05099
摘要： A thin-film capacitor and a method for making the thin-film capacitor having a structure that can prevent vertical stress acting on outer connecting terminals, such as bumps, from concentrating on electrode layers, and capable of easily increasing the equivalent series resistance to a desired value. The thin-film capacitor includes a substrate, a capacitor unit disposed above the substrate and composed of at least one dielectric thin film and two electrode layers, a protective layer covering at least part of the capacitor unit, a lead conductor electrically connected to one of the electrode layers of the capacitor unit, and a bump disposed above the lead conductor. The lead conductor includes a connecting part disposed in an opening in the protective layer and electrically connected to one of the electrode layers of the capacitor unit, and a wiring part extending over the protective layer. The bump is disposed above the wiring part.
摘要翻译： 薄膜电容器和薄膜电容器的制造方法，其具有能够防止作用在外部连接端子（例如凸块）的垂直应力集中在电极层上的结构，并且能够容易地将等效的串联电阻提高到 所需值。 薄膜电容器包括基板，设置在基板上方并由至少一个电介质薄膜和两个电极层构成的电容器单元，覆盖电容器单元的至少一部分的保护层，电连接到 电容器单元的电极层和设置在引线导体上方的凸块。 引线导体包括设置在保护层的开口中并与电容器单元的电极层中的一个电连接的连接部分和在保护层上延伸的布线部分。 凸块设置在布线部分上方。
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