摘要:
A solid-state imaging apparatus includes: a plurality of pixels generating pixel signals; color filters above the photoelectric conversion elements; a row selecting unit for selecting a plurality of rows of the pixels; a signal line receiving the pixel signal from the pixels of the row selected by the row selecting unit; a plurality of capacitors for accumulating the pixel signal outputted to the signal line; and a plurality of selecting switches connected between the signal line and the plurality of capacitors. During a first adding operation, the row selecting unit adds pixel signals accumulated in a part of the capacitors on the signal line. And, during a second adding operation, the row selecting unit adds pixel signals accumulated in other part of the capacitors with the pixel signals from the pixels of a row different from the row of which pixel signals are added in the first adding operation.
摘要:
It is intended to obtain a high quality image which is not affected by the fluctuation of dark outputs, and pixels having a specifically large dark output, called defects, and has no lateral line etc. A solid-state image pickup apparatus including: an aperture pixel region which accumulates and outputs the electric charges generated depending on incident light; a light shielded optical black region; a black reference pixel region in which no impurity region for accumulating electric charges is formed; and level shifting means which shifts the reference level of the output signals of the black reference pixel region with respect to the reference levels of the output signals of the aperture pixel region and the optical black region, is provided.
摘要:
The output voltages of dark pixels and optical black (OB) pixels are different between a row including a pixel which receives strong light and another row. An image formed upon receiving a strong light spot suffers whitish bands on the right and left of the spot. To solve this problem, this invention provides an image pickup apparatus including a pixel containing a photodiode which converts a photo-signal into a signal charge and accumulates the signal charge and an amplifier transistor which amplifies the signal charge accumulated in the photodiode, and a control element adapted to limit the output of the amplifier transistor so as to prevent the output from falling to below a predetermined voltage.
摘要:
There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor.
摘要:
The present invention is mainly aimed at obtaining excellent sensor output free from periodic fixed pattern noise even if the pieces of holding capacity are converted into blocks, and the specific solution unit is described below. The signal readout unit includes: a line memory; first switches each connected to a holding capacity; a first common signal line comprising eight switches connected together; and second switches for connecting the first common signal line to the second common signal line. The control unit controls opening/closing of both switches. Between the electrode of the second switch and the second common signal line, there is provided outgoing wiring. From the control unit, control wiring a1. . . , b1. . . is connected to the first switch. To each wiring a1. . . , b1. . . , a pair of a positive signal and an anti-signal in which the logical level has been reversed with respect to each other is supplied respectively. Each wiring a1. . . , b1. . . is arranged so as to be line-symmetric with respect to the outgoing wiring.
摘要:
There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor.
摘要:
A photoelectric conversion device formed on a single semiconductor substrate, including: a plurality of photoelectric conversion elements; a read-out circuit including a switch for reading out analog signals from the photoelectric conversion elements; a buffer circuit for driving the switch; and a logic circuit for processing digital signals. A first semiconductor area to which a ground level for the buffer circuit is supplied and a second semiconductor area to which a ground level for the logic circuit is supplied are electrically separated from each other.
摘要:
There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor.
摘要:
A solid-state imaging apparatus includes: a plurality of pixels generating pixel signals; color filters above the photoelectric conversion elements; a row selecting unit for selecting a plurality of rows of the pixels; a signal line receiving the pixel signal from the pixels of the row selected by the row selecting unit; a plurality of capacitors for accumulating the pixel signal outputted to the signal line; and a plurality of selecting switches connected between the signal line and the plurality of capacitors. During a first adding operation, the row selecting unit adds pixel signals accumulated in a part of the capacitors on the signal line. And, during a second adding operation, the row selecting unit adds pixel signals accumulated in other part of the capacitors with the pixel signals from the pixels of a row different from the row of which pixel signals are added in the first adding operation.
摘要:
A photoelectric conversion device having a substrate, a light reception area formed on a surface of the substrate, the light reception area having at least one unit pixel, an insulating layer formed on the substrate including the light reception area, and a light shielding group made of a plurality of light shieldings and formed through the insulating layer along a direction perpendicular to the substrate, the light shielding group surrounding the light reception area.