Method of manufacturing a transfer mask and method of manufacturing a semiconductor device
    1.
    发明授权
    Method of manufacturing a transfer mask and method of manufacturing a semiconductor device 有权
    制造转印掩模的方法和制造半导体器件的方法

    公开(公告)号:US08609304B2

    公开(公告)日:2013-12-17

    申请号:US13436132

    申请日:2012-03-30

    IPC分类号: G03F1/50

    CPC分类号: G03F1/84 G03F1/70 G03F1/72

    摘要: An internal defect or the like of a transfer mask is detected using transmitted light quantity distribution data of an inspection apparatus. Using a die-to-die comparison inspection method, inspection light is irradiated to a first region of a thin film to obtain a first transmitted light quantity distribution, the inspection light is also irradiated to a second region of the thin film to obtain a second transmitted light quantity distribution, a predetermined-range difference distribution is produced by plotting coordinates at which difference light quantity values calculated from a comparison between the first transmitted light quantity distribution and the second transmitted light quantity distribution are each not less than a first threshold value and less than a second threshold value, and a selection is made of a transfer mask in which a region with high density of plotting is not detected in the predetermined-range difference distribution.

    摘要翻译: 使用检查装置的透射光量分布数据检测转印掩模的内部缺陷等。 使用管芯间的比较检查方法,将检查光照射到薄膜的第一区域以获得第一透射光量分布,也将检查光照射到薄膜的第二区域,以获得第二透射光 通过绘制从第一透射光量分布和第二透射光量分布之间的比较计算出的差光量值分别不小于第一阈值的坐标,并产生预定范围的差分布, 小于第二阈值,并且选择在预定范围差分布中未检测到具有高密度绘图密度的区域的转印掩模。

    Photomask Blank, Photomask, and Pattern Transfer Method Using Photomask
    2.
    发明申请
    Photomask Blank, Photomask, and Pattern Transfer Method Using Photomask 审中-公开
    光掩模空白,光掩模和使用光掩模的图案传输方法

    公开(公告)号:US20120034553A1

    公开(公告)日:2012-02-09

    申请号:US13272988

    申请日:2011-10-13

    摘要: A low reflective photomask blank suitable for shortened exposure wavelengths is disclosed. A photomask blank (1) having a single-layer or multilayer light-shielding film (3) arranged on a translucent substrate (2) and mainly containing a metal is characterized by comprising an antireflective film (6), which at least contains silicon and oxygen and/or nitrogen, on the light-shielding film (3).

    摘要翻译: 公开了适合于缩短曝光波长的低反射光掩模坯料。 具有设置在半透明基板(2)上并主要包含金属的单层或多层遮光膜(3)的光掩模坯料(1)的特征在于包括至少含有硅的抗反射膜(6) 氧和/或氮,在遮光膜(3)上。

    Manufacturing method and apparatus of phase shift mask blank
    3.
    发明授权
    Manufacturing method and apparatus of phase shift mask blank 有权
    相移掩模空白的制造方法和装置

    公开(公告)号:US08012314B2

    公开(公告)日:2011-09-06

    申请号:US11688680

    申请日:2007-03-20

    IPC分类号: C23C14/34

    摘要: There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.

    摘要翻译: 公开了一种相移掩模坯料的制造方法,其中可以尽可能地减少坯料之间的相位角和透射率的分散,并且产率令人满意。 在相移掩模空白的制造方法中,使用溅射法在透明基板上连续地形成薄膜的工艺包括:依次对多个基板进行一系列将透明基板供应到溅射室 在溅射室中形成用于形成图案的薄膜,并且从其上形成的膜从溅射室排出透明基板; 基本上以一定间隔供给和排出透明基板; 并且在多个坯料中将成膜时间设定为恒定。

    Manufacturing method and apparatus of phase shift mask blank
    4.
    发明授权
    Manufacturing method and apparatus of phase shift mask blank 有权
    相移掩模空白的制造方法和装置

    公开(公告)号:US07282121B2

    公开(公告)日:2007-10-16

    申请号:US10821508

    申请日:2004-04-09

    IPC分类号: C23C14/34

    摘要: There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.

    摘要翻译: 公开了一种相移掩模坯料的制造方法,其中可以尽可能地减少坯料之间的相位角和透射率的分散,并且产率令人满意。 在相移掩模空白的制造方法中,使用溅射法在透明基板上连续地形成薄膜的工艺包括:依次对多个基板进行一系列将透明基板供应到溅射室 在溅射室中形成用于形成图案的薄膜,并且从其上形成的膜从溅射室排出透明基板; 基本上以一定间隔供给和排出透明基板; 并且在多个坯料中将成膜时间设定为恒定。

    Phase shift mask and phase shift mask blank
    5.
    发明授权
    Phase shift mask and phase shift mask blank 失效
    相移掩模和相移掩模空白

    公开(公告)号:US06335124B1

    公开(公告)日:2002-01-01

    申请号:US09212855

    申请日:1998-12-17

    IPC分类号: G03F900

    摘要: The method of manufacturing a halftone phase shift mask blank enables the accurate and easy control over the composition of an MSi semitransparent film that makes it easy to obtain an MSi semitransparent film having a desired specific component, the formation of film with ease at a good reproducibility and the reduction of defects in the layer. A novel process for the production of a halftone type phase shift mask blank adapted for the preparation of a phase shift mask having a semitransparent film formed on a transparent substrate, said semitransparent film being capable of making the phase of light transmitted directly by said semitransparent film different from that of light transmitted by said transparent substrate by a predetermined amount and reducing the intensity of light, characterized in that said semitransparent film is formed using a sputtering target comprising at least one element selected from the group consisting of metal elements and transition metal elements, silicon and at least one compound selected from the group consisting of oxide, nitride and oxinitride of these elements.

    摘要翻译: 制造半色调相移掩模毛坯的方法能够准确和容易地控制MSi半透明膜的组成,使得容易获得具有所需特定成分的MSi半透明膜,以良好的再现性容易地形成膜 并减少层中的缺陷。 一种用于生产适用于制备在透明基底上形成半透明膜的相移掩模的半色调型相移掩模板的新方法,所述半透明膜能够使由所述半透射膜直接传输的光的相位 与由所述透明基板透射的光预定量的光不同,并且降低光的强度,其特征在于,所述半透明膜使用包括选自金属元素和过渡金属元素中的至少一种元素的溅射靶形成 硅和选自这些元素的氧化物,氮化物和氮氧化物的至少一种化合物。

    Photomask blank, photomask, and methods of manufacturing the same
    6.
    发明授权
    Photomask blank, photomask, and methods of manufacturing the same 有权
    光掩模坯料,光掩模及其制造方法

    公开(公告)号:US08021806B2

    公开(公告)日:2011-09-20

    申请号:US12493641

    申请日:2009-06-29

    IPC分类号: G03F1/00

    摘要: A photomask blank for manufacturing a phase shift mask having a light-transmitting substrate provided with a phase shift part adapted to give a predetermined phase difference to transmitted exposure light. An etching mask film serving as an etching mask when forming a phase shift part is provided on the front surface side, where the phase shift part is to be formed, of the substrate. A light-shielding film serving to shield exposure light is provided on the back surface side (opposite-side surface) of the substrate.

    摘要翻译: 一种用于制造相移掩模的光掩模坯料,其具有设置有相移部分的透光衬底,该相移部件适于对透射的曝光光产生预定的相位差。 在形成相移部分时用作蚀刻掩模的蚀刻掩模膜设置在衬底的形成相移部分的正面上。 用于屏蔽曝光光的遮光膜设置在基板的背面侧(相对侧面)。

    Halftone type phase shift mask blank and phase shift mask thereof
    7.
    发明授权
    Halftone type phase shift mask blank and phase shift mask thereof 有权
    半色调型相移掩模空白及其相移掩模

    公开(公告)号:US07592106B2

    公开(公告)日:2009-09-22

    申请号:US11562217

    申请日:2006-11-21

    IPC分类号: G03F1/00 G03C5/00

    CPC分类号: G03F1/32 G03F1/84

    摘要: A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.

    摘要翻译: 一种半透明型相移掩模坯料,在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差,其中该移相膜由多层膜形成 提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜,并且以使膜的折射率成为上层的方式调节上层的厚度 层比作为下层的膜小,并且移相膜的检查光的表面反射率最大化并近似为最大。

    HALFTONE TYPE PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK THEREOF
    8.
    发明申请
    HALFTONE TYPE PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK THEREOF 有权
    HALFTONE类型相移屏蔽区和相位移屏蔽

    公开(公告)号:US20070092808A1

    公开(公告)日:2007-04-26

    申请号:US11562217

    申请日:2006-11-21

    IPC分类号: G03C5/00 G03F1/00

    CPC分类号: G03F1/32 G03F1/84

    摘要: A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.

    摘要翻译: 一种半透明型相移掩模坯料,在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差,其中该移相膜由多层膜形成 提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜,并且以使膜的折射率成为上层的方式调节上层的厚度 层比作为下层的膜小,并且移相膜的检查光的表面反射率最大化并近似为最大。

    Manufacturing method and apparatus of phase shift mask blank
    9.
    发明授权
    Manufacturing method and apparatus of phase shift mask blank 有权
    相移掩模空白的制造方法和装置

    公开(公告)号:US06783634B2

    公开(公告)日:2004-08-31

    申请号:US09952445

    申请日:2001-09-12

    IPC分类号: C23C1434

    摘要: There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.

    摘要翻译: 公开了一种相移掩模坯料的制造方法,其中可以尽可能地减少坯料之间的相位角和透射率的分散,并且产率令人满意。 在相移掩模空白的制造方法中,使用溅射法在透明基板上连续地形成薄膜的工艺包括:依次对多个基板进行一系列将透明基板供应到溅射室 在溅射室中形成用于形成图案的薄膜,并且从其上形成的膜从溅射室排出透明基板; 基本上以一定间隔供给和排出透明基板; 并且在多个坯料中将成膜时间设定为恒定。

    Phase shift mask and phase shift mask blank
    10.
    发明授权
    Phase shift mask and phase shift mask blank 失效
    相移掩模和相移掩模空白

    公开(公告)号:US6087047A

    公开(公告)日:2000-07-11

    申请号:US153027

    申请日:1998-09-15

    CPC分类号: G03F1/32

    摘要: In a half-tone type phase shift mask blank in which a semi-transparent film is formed on a transparent substrate, and the semi-transparent film serves to shift phase of a first optical light beam which transmits the semi-transparent film for a second optical light beam which directly transmits the transparent substrate and further, serves to reduce strength of the first optical light beam, the semi-transparent film includes silicon and nickel, and at least one selected from the group consisting of nitrogen, oxygen and hydrogen, and the relationship between the silicon and the nickel is specified by a formula in which a rate of [atom % of the nickel in the film] for [atom % of the nickel in the film+atom % of the silicon in the film] falls within the range between 0.15 and 0.5.

    摘要翻译: 在透明基板上形成半透明膜的半色调型相移掩模坯料中,半透明膜用于将透过半透明膜的第一光束的相位偏移一秒 直接透过透明基板的光束,进一步降低第一光束的强度,半透明膜包括硅和镍,以及选自氮,氧和氢的至少一种,以及 硅和镍之间的关系由以下公式确定:其中[膜中的镍原子%的原子%的原子%与膜中的硅的原子%的比率]落入其中 范围在0.15和0.5之间。