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公开(公告)号：US06674258B2
公开(公告)日：2004-01-06
申请号：US10175059
申请日：2002-06-20
IPC分类号： G05B1128
CPC分类号： H02P6/10 , H02M7/5395 , H02M2001/0009 , H02P6/085 , H02P6/28
摘要： A motor driver having output circuits each including upper and lower side switching elements connected in series. The motor driver includes: a current detection resistance connected in series with the output circuits in common; a phase switch circuit for turning ON a switching element on one side of one of the output circuits for a time period corresponding to a predetermined electrical angle and switching switching elements on the other side of a plurality of output circuits among the remaining ones of the output circuits; and an ON-period control section for generating a signal for controlling the switching operation so that each of periods obtained by dividing the time period includes a first period in which a plurality of switching elements are turned ON and a second period in which one of the switching elements turned ON in the first period is kept ON.
摘要翻译： 具有各自包括串联连接的上侧开关元件和下侧开关元件的输出电路的电机驱动器。 电机驱动器包括：与输出电路串联连接的电流检测电阻; 一个相位切换电路，用于在输出电路中的一个输出电路的一侧上接通一个对应于预定电角度的时间段的开关元件，并且在剩余的输出电路中的多个输出电路的另一侧上切换开关元件 电路; 以及导通周期控制部分，用于产生用于控制切换操作的信号，使得通过划分时间段获得的每个周期包括多个开关元件导通的第一周期和第二周期，其中， 在第一周期中接通的开关元件保持ON。
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公开(公告)号：US06873126B2
公开(公告)日：2005-03-29
申请号：US10608157
申请日：2003-06-30
CPC分类号： H02P6/14 , H02P6/28 , H02P2209/07
摘要： A motor drive method for a motor driver having output circuits each including upper and lower side switching elements connected in series, and a current detection resistance connected in series with the output circuits in common. The motor drive method includes the steps of: turning ON a switching element on one side of one of the output circuits for a time period corresponding to a predetermined electrical angle; and repeatedly switching switching elements on the other side of a plurality of output circuits among the remaining ones of the output circuits. In the switching step, each of a plurality of periods obtained by dividing the time period corresponding to the predetermined electrical angle includes a first period in which one of the switching elements to be switched is turned ON and a second period in which another one of the switching elements is turned ON.
摘要翻译： 一种用于具有输出电路的电机驱动器的电机驱动方法，每个输出电路各自包括串联连接的上下开关元件和与输出电路串联连接的电流检测电阻。 电动机驱动方法包括以下步骤：在一个输出电路的一侧上接通开关元件一段对应于预定电角度的时间段; 并且在其余输出电路中的多个输出电路的另一侧反复切换开关元件。 在切换步骤中，通过划分对应于预定电角度的时间段而获得的多个周期中的每个周期包括第一周期，其中要切换的开关元件中的一个被接通，以及第二周期，其中， 开关元件接通。
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公开(公告)号：US20050134533A1
公开(公告)日：2005-06-23
申请号：US10991243
申请日：2004-11-17
申请人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
发明人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
IPC分类号： G09G3/20 , G09G3/291 , G09G3/294 , G09G3/296 , H01L21/822 , H01L21/8238 , H01L27/04 , H01L27/06 , H01L27/092 , H03K17/687 , G09G3/28
CPC分类号： G09G3/296 , G09G3/282 , G09G3/294 , G09G2300/0408 , G09G2310/0289 , G09G2330/04
摘要： The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.
摘要翻译： 双极晶体管电路的集电极，发射极和基极分别连接到高侧电源端子，电平移位晶体管的漏极和浮动电源端子。 当高边输出晶体管导通时，浮动电源端子处于高电位电源端子的电位。 高侧电源端子通过恒定电压处于高于浮动电源端子的电位的电位。 开启电平移位晶体管时，其漏极电位降低到浮动电源端子的电位以下; 基极电流流过双极晶体管电路，电平移位晶体管的漏极电压钳位在浮动电源端子的电位附近; 双极晶体管电路导通，其集电极电流提供电平移位晶体管的漏极电流。
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公开(公告)号：US07969429B2
公开(公告)日：2011-06-28
申请号：US11941240
申请日：2007-11-16
申请人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
发明人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
IPC分类号： H01L29/739 , H01L31/00 , H03F3/16 , G09G3/28 , G09G5/00 , G06F3/038 , H01L27/10 , H01L29/73 , H03F3/04 , G09G3/20
CPC分类号： G09G3/296 , G09G3/282 , G09G3/294 , G09G2300/0408 , G09G2310/0289 , G09G2330/04
摘要： The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.
摘要翻译： 双极晶体管电路的集电极，发射极和基极分别连接到高侧电源端子，电平移位晶体管的漏极和浮动电源端子。 当高边输出晶体管导通时，浮动电源端子处于高电位电源端子的电位。 高侧电源端子通过恒定电压处于高于浮动电源端子的电位的电位。 开启电平移位晶体管时，其漏极电位降低到浮动电源端子的电位以下; 基极电流流过双极晶体管电路，电平移位晶体管的漏极电压钳位在浮动电源端子的电位附近; 双极晶体管电路导通，其集电极电流提供电平移位晶体管的漏极电流。
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公开(公告)号：US07358968B2
公开(公告)日：2008-04-15
申请号：US10991243
申请日：2004-11-17
申请人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
发明人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
IPC分类号： H01L29/739 , H01L31/00 , H03F3/16 , G09G3/28 , G09G5/00 , G06F3/038 , H01L27/10 , H01L29/73 , H03F3/04 , G09G3/20
CPC分类号： G09G3/296 , G09G3/282 , G09G3/294 , G09G2300/0408 , G09G2310/0289 , G09G2330/04
摘要： The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.
摘要翻译： 双极晶体管电路的集电极，发射极和基极分别连接到高侧电源端子，电平移位晶体管的漏极和浮动电源端子。 当高边输出晶体管导通时，浮动电源端子处于高电位电源端子的电位。 高侧电源端子通过恒定电压处于高于浮动电源端子的电位的电位。 开启电平移位晶体管时，其漏极电位降低到浮动电源端子的电位以下; 基极电流流过双极晶体管电路，电平移位晶体管的漏极电压钳位在浮动电源端子的电位附近; 双极晶体管电路导通，其集电极电流提供电平移位晶体管的漏极电流。
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公开(公告)号：US20080068368A1
公开(公告)日：2008-03-20
申请号：US11941240
申请日：2007-11-16
申请人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
发明人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
CPC分类号： G09G3/296 , G09G3/282 , G09G3/294 , G09G2300/0408 , G09G2310/0289 , G09G2330/04
摘要： The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.
摘要翻译： 双极晶体管电路的集电极，发射极和基极分别连接到高侧电源端子，电平移位晶体管的漏极和浮动电源端子。 当高边输出晶体管导通时，浮动电源端子处于高电位电源端子的电位。 高侧电源端子通过恒定电压处于高于浮动电源端子的电位的电位。 开启电平移位晶体管时，其漏极电位降低到浮动电源端子的电位以下; 基极电流流过双极晶体管电路，电平移位晶体管的漏极电压钳位在浮动电源端子的电位附近; 双极晶体管电路导通，其集电极电流提供电平移位晶体管的漏极电流。
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公开(公告)号：US07129779B2
公开(公告)日：2006-10-31
申请号：US11048732
申请日：2005-02-03
申请人： Masashi Inao , Hiroki Matsunaga
发明人： Masashi Inao , Hiroki Matsunaga
IPC分类号： H03F1/00
CPC分类号： H01L29/73 , G05F3/30 , H01L27/0635 , H01L29/0619 , H01L29/0692
摘要： A band gap circuit using NPN transistors (10, 12) having collectors connected to a power source voltage is employed, and transistor active regions of the NPN transistors (10, 12) and semiconductor elements constituting other signal processing circuits are integrated in the same floating block (19) with high voltage resistance. As a result, a reference voltage circuit used in the signal processing circuit can be integrated in a compact manner.
摘要翻译： 使用具有连接到电源电压的集电极的NPN晶体管（10,12）的带隙电路，并且构成其他信号处理电路的NPN晶体管（10,12）和半导体元件的晶体管有源区域被集成在相同的浮置 块（19）具有高耐压性。 结果，可以以紧凑的方式集成在信号处理电路中使用的参考电压电路。
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公开(公告)号：US20050189603A1
公开(公告)日：2005-09-01
申请号：US11048732
申请日：2005-02-03
申请人： Masashi Inao , Hiroki Matsunaga
发明人： Masashi Inao , Hiroki Matsunaga
IPC分类号： H01L21/331 , G05F3/30 , G09F9/313 , H01J17/49 , H01L21/822 , H01L21/8222 , H01L21/8234 , H01L21/8248 , H01L21/8249 , H01L23/58 , H01L27/04 , H01L27/06 , H01L29/06 , H01L29/73 , H01L29/732
CPC分类号： H01L29/73 , G05F3/30 , H01L27/0635 , H01L29/0619 , H01L29/0692
摘要： A band gap circuit using NPN transistors (10, 12) having collectors connected to a power source voltage is employed, and transistor active regions of the NPN transistors (10, 12) and semiconductor elements constituting other signal processing circuits are integrated in the same floating block (19) with high voltage resistance. As a result, a reference voltage circuit used in the signal processing circuit can be integrated in a compact manner.
摘要翻译： 使用具有连接到电源电压的集电极的NPN晶体管（10,12）的带隙电路，并且构成其他信号处理电路的NPN晶体管（10,12）和半导体元件的晶体管有源区域被集成在相同的浮置 块（19）具有高耐压性。 结果，可以以紧凑的方式集成在信号处理电路中使用的参考电压电路。
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