摘要:
An image processing apparatus includes a read unit and a first correction unit. The read unit reads a document and generates multilevel image data from the document. The first correction unit corrects the multilevel image data contained in a first range predetermined as a color indicating a fluorescent color so as to move the multilevel image data contained in the first range to an outside of a print color range when at least a part of the multilevel image data is contained in the first range.
摘要:
An image processing apparatus includes: a noise position information obtaining unit that obtains noise position information regarding positions of noise in an image read by a reading unit that optically reads a surface of a medium, an image generating unit that generates a noise eliminated image that is obtained by eliminating a noise from the image, a pattern information obtaining unit that obtains pattern information indicating a pattern appearing on the surface of the medium from the noise eliminated image, and a pattern information registering unit that registers the pattern information obtained from areas set on the basis of the noise position information in the noise eliminated image.
摘要:
A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.
摘要:
A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.
摘要:
A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.
摘要:
An image processing apparatus includes an acceptance unit that accepts an image of an original from an image reader having a conveying unit that conveys an original in sequence along a conveying path passing through a read position and an image read unit that reads the image of the original at the read position at read speed responsive to conveying speed of the original; an acquisition unit that acquires information concerning a stable read range in which the read speed in the conveying direction in the original becomes a stable state from storage in which the information is previously stored; and a registration unit that extracts feature information concerning a microscopic pattern that a surface of the original has from a registration area in the image of the original accepted by the acceptance unit and registers the feature information in association with position information concerning a position of the registration area.
摘要:
A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.