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公开(公告)号：US20100044802A1
公开(公告)日：2010-02-25
申请号：US12495070
申请日：2009-06-30
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L21/763 , H01L21/76224 , H01L29/7846
摘要： Provided are a semiconductor device making it possible to form an element region having a dimension close to a designed dimension, restrain a phenomenon similar to gate-induced drain leakage, and further restrain compressive stress to be applied to the element region by oxidation of a conductive film; and a method for manufacturing the semiconductor device. Trenches are made in a main surface of a semiconductor substrate. By oxidizing the wall surface of each of the trenches, a first oxide film is formed on the wall surface. An embedded conductive film is formed to be embedded into the trench. The embedded conductive film is oxidized in an atmosphere containing an active oxidizing species, thereby forming a second oxide film. A third oxide film is formed on the second oxide film by CVD or coating method.
摘要翻译： 提供一种半导体器件，其可以形成具有接近设计尺寸的尺寸的元件区域，抑制类似于栅极引起的漏极泄漏的现象，并且进一步抑制通过导电的氧化对元件区域施加的压缩应力 电影; 以及半导体装置的制造方法。 沟槽在半导体基板的主表面上制成。 通过氧化每个沟槽的壁表面，在壁表面上形成第一氧化膜。 嵌入的导电膜被形成为嵌入到沟槽中。 嵌入的导电膜在含有活性氧化物质的气氛中被氧化，从而形成第二氧化膜。 通过CVD或涂布法在第二氧化物膜上形成第三氧化物膜。
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公开(公告)号：US08592284B2
公开(公告)日：2013-11-26
申请号：US12495070
申请日：2009-06-30
IPC分类号： H01L21/76
CPC分类号： H01L21/763 , H01L21/76224 , H01L29/7846
摘要： Provided are a semiconductor device making it possible to form an element region having a dimension close to a designed dimension, restrain a phenomenon similar to gate-induced drain leakage, and further restrain compressive stress to be applied to the element region by oxidation of a conductive film; and a method for manufacturing the semiconductor device. Trenches are made in a main surface of a semiconductor substrate. By oxidizing the wall surface of each of the trenches, a first oxide film is formed on the wall surface. An embedded conductive film is formed to be embedded into the trench. The embedded conductive film is oxidized in an atmosphere containing an active oxidizing species, thereby forming a second oxide film. A third oxide film is formed on the second oxide film by CVD or coating method.
摘要翻译： 提供一种半导体器件，其可以形成具有接近设计尺寸的尺寸的元件区域，抑制类似于栅极引起的漏极泄漏的现象，并且进一步抑制通过导电的氧化对元件区域施加的压缩应力 电影; 以及半导体装置的制造方法。 沟槽在半导体基板的主表面上制成。 通过氧化每个沟槽的壁表面，在壁表面上形成第一氧化膜。 嵌入的导电膜被形成为嵌入到沟槽中。 嵌入的导电膜在含有活性氧化物质的气氛中被氧化，从而形成第二氧化物膜。 通过CVD或涂布法在第二氧化物膜上形成第三氧化物膜。
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公开(公告)号：US08043918B2
公开(公告)日：2011-10-25
申请号：US12840430
申请日：2010-07-21
IPC分类号： H01L21/336
CPC分类号： H01L21/823475 , H01L21/743 , H01L21/76229 , H01L21/763 , H01L21/823481 , H01L21/823871 , H01L21/823878 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： To manufacture in high productivity a semiconductor device capable of securely achieving element isolation by a trench-type element isolation and capable of effectively preventing potentials of adjacent elements from affecting other nodes, a method of manufacturing the semiconductor device includes: a step of forming a first layer on a substrate; a step of forming a trench by etching the first layer and the substrate; a step of thermally oxidizing an inner wall of the trench; a step of depositing a first conductive film having a film thickness equal to or larger than one half of the trench width of the trench on the substrate including the trench; a step of removing a first conductive film from the first layer by a CMP method and keeping the first conductive film left in only the trench; a step of anisotropically etching the first conductive film within the trench to adjust the height of the conductive film to become lower than the height of the surface of the substrate; a step of depositing an insulating film on the first conductive film by the CVD method to embed the upper part of the first conductive film within the trench; a step of flattening the insulating film by the CMP method; and a step of removing the first layer.
摘要翻译： 为了以高生产率制造能够通过沟槽型元件隔离可靠地实现元件隔离并且能够有效地防止相邻元件的电位影响其他节点的半导体器件，制造半导体器件的方法包括：形成第一 层; 通过蚀刻第一层和衬底形成沟槽的步骤; 热氧化沟槽内壁的步骤; 在包括沟槽的衬底上沉积膜厚度等于或大于沟槽的沟槽宽度的一半的第一导电膜的步骤; 通过CMP方法从第一层除去第一导电膜并保持第一导电膜仅留在沟槽中的步骤; 在沟槽内各向异性蚀刻第一导电膜的步骤，以调节导电膜的高度，使其低于衬底表面的高度; 通过CVD法在第一导电膜上沉积绝缘膜以将第一导电膜的上部嵌入沟槽内的步骤; 通过CMP方法使绝缘膜平坦化的步骤; 以及去除第一层的步骤。
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公开(公告)号：US07791163B2
公开(公告)日：2010-09-07
申请号：US11577878
申请日：2005-10-18
IPC分类号： H01L29/768
CPC分类号： H01L21/823475 , H01L21/743 , H01L21/76229 , H01L21/763 , H01L21/823481 , H01L21/823871 , H01L21/823878 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： In the process of manufacturing a semiconductor device, a first layer is formed on a substrate, and the first layer and the substrate are etched to form a trench. The inner wall of the trench is thermally oxidized. On the substrate, including inside the trench, is deposited a first conductive film having a thickness equal to or larger than one half of the width of the trench. The first conductive film on the first layer is removed by chemical mechanical polishing such that the first conductive film remains in only the trench. The height of the first conductive film in the trench is adjusted to be lower than a surface of the substrate by anisotropically etching the first conductive film. An insulating film is deposited on the substrate by chemical vapor deposition to cover an upper surface of the first conductive film in the trench. The insulating film is flattened by chemical mechanical polishing, and the first layer is removed.
摘要翻译： 在制造半导体器件的过程中，在衬底上形成第一层，并且蚀刻第一层和衬底以形成沟槽。 沟槽的内壁被热氧化。 在包括沟槽内部的衬底上沉积厚度等于或大于沟槽宽度的一半的第一导电膜。 通过化学机械抛光去除第一层上的第一导电膜，使得第一导电膜仅保留在沟槽中。 通过各向异性蚀刻第一导电膜，将沟槽中的第一导电膜的高度调节为低于衬底的表面。 通过化学气相沉积在衬底上沉积绝缘膜以覆盖沟槽中的第一导电膜的上表面。 绝缘膜通过化学机械抛光而变平，第一层被去除。
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公开(公告)号：US20070241373A1
公开(公告)日：2007-10-18
申请号：US11577878
申请日：2005-10-18
IPC分类号： H01L29/768 , H01L21/76 , H01L29/00
CPC分类号： H01L21/823475 , H01L21/743 , H01L21/76229 , H01L21/763 , H01L21/823481 , H01L21/823871 , H01L21/823878 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： In the process of manufacturing a semiconductor device, a first layer is formed on a substrate, and the first layer and the substrate are etched to form a trench. The inner wall of the trench is thermally oxidized. On the substrate, including inside the trench, is deposited a first conductive film having a thickness equal to or larger than one half of the width of the trench. The first conductive film on the first layer is removed by chemical mechanical polishing such that the first conductive film remains in only the trench. The height of the first conductive film in the trench is adjusted to be lower than a surface of the substrate by anisotropically etching the first conductive film. An insulating film is deposited on the substrate by chemical vapor deposition to cover an upper surface of the first conductive film in the trench. The insulating film is flattened by chemical mechanical polishing, and the first layer is removed.
摘要翻译： 在制造半导体器件的过程中，在衬底上形成第一层，并且蚀刻第一层和衬底以形成沟槽。 沟槽的内壁被热氧化。 在包括沟槽内部的衬底上沉积厚度等于或大于沟槽宽度的一半的第一导电膜。 通过化学机械抛光去除第一层上的第一导电膜，使得第一导电膜仅保留在沟槽中。 通过各向异性蚀刻第一导电膜，将沟槽中的第一导电膜的高度调节为低于衬底的表面。 通过化学气相沉积在衬底上沉积绝缘膜以覆盖沟槽中的第一导电膜的上表面。 绝缘膜通过化学机械抛光而变平，第一层被去除。
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6.发明授权Semiconductor device with element isolation using impurity-doped insulator and oxynitride film 失效使用杂质掺杂绝缘体和氧氮化物膜的元件隔离的半导体器件公开(公告)号：US06744113B2
公开(公告)日：2004-06-01
申请号：US10377829
申请日：2003-03-04
IPC分类号： H01L2900
CPC分类号： H01L21/76224 , H01L21/823481
摘要： In a trench (2), an oxynitride film (31ON1) and a silicon oxide film (31O1) are positioned between a doped silicon oxide film (31D) and a substrate (1), and a silicon oxide film (31O2) is positioned closer to the entrance of the trench (2) than the doped silicon oxide film (31D). The oxynitride film (31ON1) is formed by a nitridation process utilizing the silicon oxide film (31O1). The vicinity of the entrance of the trench (2) is occupied by the silicon oxide films (31O1, 31O2) and the oxynitride film (31ON1).
摘要翻译： 在沟槽（2）中，氧氮化物膜（31ON1）和氧化硅膜（3101）位于掺杂氧化硅膜（31D）和衬底（1）之间，氧化硅膜（310）位于更靠近 到沟槽（2）的入口比掺杂的氧化硅膜（31D）。 氧氮化物膜（31ON1）通过利用氧化硅膜（3101）的氮化工艺形成。 沟槽（2）的入口附近被氧化硅膜（3101,3102）和氮氧化物膜（31ON1）所占据。
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7.发明授权Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate 失效制造半导体器件的方法包括在衬底上形成绝缘膜和外延半导体的步骤公开(公告)号：US06737315B2
公开(公告)日：2004-05-18
申请号：US10212249
申请日：2002-08-06
IPC分类号： H01L218242
CPC分类号： H01L21/762 , H01L21/823481 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A substrate surface (10S) is thermally oxidized to form an oxide film. The oxide film is patterned so that the substrate surface (10S) in an active region is exposed. An oxide film (20) is thereby provided. An exposed substrate surface (10S) is thermally oxidized, to form a thermal oxide film. This thermal oxide film is thereafter removed at least in an element forming region. A silicon film (41) is epitaxially grown on the exposed substrate surface (10S). Thereafter the silicon film (41) is polished by CMP to an extent that an upper surface of the silicon film after polishing is not more than an upper surface of the oxide film (20) in height. Next, the surface of the silicon film is thermally oxidized to form a thermal oxide film. After ion implantation of various types, this thermal oxide film is removed.
摘要翻译： 将基板表面（10S）热氧化以形成氧化膜。 图案化氧化膜，使得有源区域中的衬底表面（10S）暴露。 由此提供氧化膜（20）。 暴露的衬底表面（10S）被热氧化，以形成热氧化膜。 此后，至少在元件形成区域中除去该热氧化膜。 在暴露的基板表面（10S）上外延生长硅膜（41）。 此后，通过CMP对硅膜（41）进行抛光，使抛光后的硅膜的上表面的高度不超过氧化膜（20）的上表面。 接着，将硅膜的表面热氧化，形成热氧化膜。 在各种类型的离子注入之后，去除该热氧化膜。
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公开(公告)号：US06707099B2
公开(公告)日：2004-03-16
申请号：US10218444
申请日：2002-08-15
IPC分类号： H01L29792
CPC分类号： H01L29/66651 , H01L21/28123 , H01L29/1033
摘要： A semiconductor device less susceptible to inverse narrow channel effect and its manufacturing method are provided. A silicon nitride film (13) is adopted as element isolation regions; the silicon nitride film (13) has a smaller etch rate than a sacrificial silicon oxide film (7) which serves as a sacrificial layer during ion implantation (8). This prevents formation of recesses in the silicon nitride film (13) during the removal of the sacrificial silicon oxide film (7), which weakens the strength of the electric fields at the gate edges. Weakening the strength of the electric fields at the gate edges suppresses the inverse narrow channel effect, so that the MOS transistor offers a characteristic closer to a characteristic in which the threshold voltage keeps a constant value independently of the channel width. Thus an MOS transistor having a good characteristic can be manufactured.
摘要翻译： 提供了一种不易反向窄通道效应的半导体器件及其制造方法。 采用氮化硅膜（13）作为元件隔离区域; 氮化硅膜（13）具有比在离子注入期间用作牺牲层的牺牲氧化硅膜（7）更小的蚀刻速率（8）。 这样可以防止在去除牺牲氧化硅膜（7）期间在氮化硅膜（13）中形成凹陷，这削弱了栅极边缘处的电场强度。 削弱栅极边缘处的电场强度抑制了反向窄通道效应，使得MOS晶体管具有更接近阈值电压独立于沟道宽度保持恒定值的特性。 因此，可以制造具有良好特性的MOS晶体管。
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公开(公告)号：US06498077B2
公开(公告)日：2002-12-24
申请号：US09816519
申请日：2001-03-26
申请人： Shuuichi Ueno , Katsuyuki Horita , Takashi Kuroi
发明人： Shuuichi Ueno , Katsuyuki Horita , Takashi Kuroi
IPC分类号： H01L21425
CPC分类号： H01L29/1083 , H01L21/26586 , H01L27/10808 , H01L27/10829 , H01L27/10841 , H01L27/10873 , H01L29/1045 , H01L29/105 , H01L29/66537 , H01L29/66545 , H01L29/7836
摘要： Provided are a semiconductor device having a MOS transistor of a structure capable of obtaining a good characteristic particularly about assurance of resistance to punch-through and leak current reduction, as well as a method of manufacturing the same. That is, in addition to the usual MOS transistor structure, a channel dope region (1) is disposed at a predetermined depth so as to extend substantially the entire surface of a flat surface in a P well region (22) including a channel region. In the channel dope region (1), it is set so that the maximum value of the P type impurity concentration (MAX of P) ranges from 1×1018 to 1×1019, and the maximum value of the N type impurity concentration (MAX of N) of a source/drain region (31 (32)) is not less than 10% and not more than 100%. Note that the surface proximate region of the P well region (22) is to be beyond the object.
摘要翻译： 本发明提供一种半导体器件及其制造方法，该半导体器件具有能够获得特别是耐穿孔和漏电流降低的保证的良好特性的结构的MOS晶体管。 也就是说，除了通常的MOS晶体管结构之外，通道掺杂区域（1）以预定深度设置，以便在包括沟道区域的P阱区域（22）中的基本上平坦表面的整个表面上延伸。 在通道掺杂区域（1）中，将P型杂质浓度（P的最大值）的最大值设定为1×1018〜1×1019，N型杂质浓度的最大值（N的最大值）为 源极/漏极区域（31（32））不小于10％且不大于100％。 注意，P阱区域（22）的表面邻近区域将超出对象。
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公开(公告)号：US06399985B2
公开(公告)日：2002-06-04
申请号：US09750759
申请日：2001-01-02
IPC分类号： H01L2976
CPC分类号： H01L21/823481 , H01L21/26586 , H01L21/76229 , H01L21/76235 , H01L27/0207 , H01L29/41758
摘要： Provided are a semiconductor device that can obtain more output current without increasing the occupied area of a MOS transistor, and a method for manufacturing the same. MOS transistors (M11, M12) are electrically isolated by a trench isolation oxide film (21). The MOS transistor (M11) has a groove portion (GP) in which the width of the top is 20 nm to 80 nm and the depth is 50 nm to 150 nm. The groove portion (GP) is disposed at the boundary part between a trench isolation insulating film (22) and an active region (AR1) so as to surround the active region (AR1). A gate electrode (31A) is not only disposed above the active region (AR1) but also buried in the groove (GP) with a gate oxide film (30) interposed therebetween. Similarly, in the MOS transistor (M12), a groove portion (GP) is disposed at the boundary part between the trench isolation insulating film (21) and an active region (AR2) so as to surround the active region (AR2), and a gate electrode (32A) is also buried in the groove (GP) with the gate oxide film (30) interposed therebetween.
摘要翻译： 提供一种可以在不增加MOS晶体管的占用面积的情况下获得更多的输出电流的半导体器件及其制造方法。 MOS晶体管（M11，M12）通过沟槽隔离氧化膜（21）电隔离。 MOS晶体管（M11）具有其顶部宽度为20nm〜80nm，深度为50nm〜150nm的槽部（GP）。 沟槽部分（GP）设置在沟道隔离绝缘膜（22）和有源区域（AR1）之间的边界部分，以围绕有源区域（AR1）。 栅电极（31A）不仅设置在有源区（AR1）的上方，而且还以栅介质膜（30）插入槽（GP）中。 类似地，在MOS晶体管（M12）中，沟槽部分（GP）设置在沟道隔离绝缘膜（21）和有源区域（AR2）之间的边界部分以包围有源区域（AR2），并且 栅极电极（32A）也被埋置在沟槽（GP）中，栅氧化膜（30）插入其间。
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