公开(公告)号：US08008622B2

公开(公告)日：2011-08-30

申请号：US12630346

申请日：2009-12-03

Applicant: Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

Inventor： Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

IPC: H01J37/26

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31762 ,  H01J2237/31769

Abstract: High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.

Abstract translation: 通过使用小剂量的电子束进行高对比度曝光，以高精度在晶片上形成图案，进行高精度检查。 在图案形成中，执行邻近效应校正处理。 此外，基于使用电子束的曝光特性的逆特性的滤波结果来执行电子束的曝光。 此外，在图案检查中，基于滤波结果照射电子束，以获得形成的图案的边缘的周边区域。

公开(公告)号：US07692166B2

公开(公告)日：2010-04-06

申请号：US11762182

申请日：2007-06-13

Applicant: Masato Muraki ,  Haruo Yoda

Inventor： Masato Muraki ,  Haruo Yoda

IPC: H01J37/304 ,  H01L21/027

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J2237/043 ,  H01J2237/24507 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: An exposure apparatus which draws a pattern on a substrate with a charged particle beam is disclosed. The exposure apparatus includes a detector which detects a charged particle beam, a deflector which deflects the charged particle beam to scan the substrate or the detector with the charged particle beam, and a controller which controls the deflector to scan each of a plurality of scanning ranges on the detector with the charged particle beam, and calculates, on the basis of the charged particle beam amount detected by the detector upon scanning the plurality of scanning ranges, the intensity distribution of the charged particle beam which strikes the detector.

Abstract translation: 公开了一种在具有带电粒子束的基板上绘制图案的曝光装置。 曝光装置包括检测带电粒子束的检测器，使带电粒子束偏转以利用带电粒子束扫描基板或检测器的偏转器，以及控制偏转器扫描多个扫描范围中的每一个的控制器 在具有带电粒子束的检测器上，并且基于扫描多个扫描范围时由检测器检测到的带电粒子束量计算撞击检测器的带电粒子束的强度分布。

公开(公告)号：US06946665B2

公开(公告)日：2005-09-20

申请号：US10909300

申请日：2004-08-03

Applicant: Masato Muraki ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Haruo Yoda ,  Norio Saitou

Inventor： Masato Muraki ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Haruo Yoda ,  Norio Saitou

IPC: G03F7/20 ,  H01J37/04 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J3/07 ,  H01J3/14

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/317

Abstract: A charged particle beam exposure apparatus which exposes a substrate using a plurality of charged particle beams includes a first measurement member for making the plurality of charged particle beams come incident and measuring a total current value of the charged particle beams. A second measurement member makes the plurality of charged particle beams come incident and multiplies electrons of each of the incident charged particle beams, thereby measuring a relative value of a current of each of the charged particle beams.

Abstract translation: 使用多个带电粒子束曝光基板的带电粒子束曝光装置包括用于使多个带电粒子束入射的第一测量部件，并测量带电粒子束的总电流值。 第二测量构件使多个带电粒子束入射并乘以每个入射带电粒子束的电子，从而测量每个带电粒子束的电流的相对值。

公开(公告)号：US20100078555A1

公开(公告)日：2010-04-01

申请号：US12630346

申请日：2009-12-03

Applicant: Ryo FUJITA ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

Inventor： Ryo FUJITA ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

IPC: G01N23/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31762 ,  H01J2237/31769

Abstract: High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.

Abstract translation: 通过使用小剂量的电子束进行高对比度曝光，以高精度在晶片上形成图案，进行高精度检查。 在图案形成中，执行邻近效应校正处理。 此外，基于使用电子束的曝光特性的逆特性的滤波结果来执行电子束的曝光。 此外，在图案检查中，基于滤波结果照射电子束，以获得形成的图案的边缘的周边区域。

公开(公告)号：US20080067403A1

公开(公告)日：2008-03-20

申请号：US11762182

申请日：2007-06-13

Applicant: Masato Muraki ,  Haruo Yoda

Inventor： Masato Muraki ,  Haruo Yoda

IPC: H01J3/14

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J2237/043 ,  H01J2237/24507 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: An exposure apparatus which draws a pattern on a substrate with a charged particle beam is disclosed. The exposure apparatus includes a detector which detects a charged particle beam, a deflector which deflects the charged particle beam to scan the substrate or the detector with the charged particle beam, and a controller which controls the deflector to scan each of a plurality of scanning ranges on the detector with the charged particle beam, and calculates, on the basis of the charged particle beam amount detected by the detector upon scanning the plurality of scanning ranges, the intensity distribution of the charged particle beam which strikes the detector.

Abstract translation: 公开了一种在具有带电粒子束的基板上绘制图案的曝光装置。 曝光装置包括检测带电粒子束的检测器，使带电粒子束偏转以利用带电粒子束扫描基板或检测器的偏转器，以及控制偏转器扫描多个扫描范围中的每一个的控制器 在具有带电粒子束的检测器上，并且基于扫描多个扫描范围时由检测器检测到的带电粒子束量计算撞击检测器的带电粒子束的强度分布。

公开(公告)号：US07049610B2

公开(公告)日：2006-05-23

申请号：US10885665

申请日：2004-07-08

Applicant: Masato Muraki ,  Haruo Yoda

Inventor： Masato Muraki ,  Haruo Yoda

IPC: H01J37/305

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/0435 ,  H01J2237/083 ,  H01J2237/30477

Abstract: In a charged particle beam exposure method of applying/not applying charged particle beams to expose a substrate by deflecting the charged particle beams to move the charged particle beams on a blanking aperture stop, the size of the charged particle beams on the blanking aperture stop is made larger than the size of the blanking aperture stop.

Abstract translation: 在通过使带电粒子束偏转以使带电粒子束移动到消隐孔径光阑上而施加/不施加带电粒子束以暴露衬底的带电粒子束曝光方法中，消隐孔径光阑上的带电粒子束的尺寸为 制成大于冲孔孔径的尺寸。

公开(公告)号：US20100078556A1

公开(公告)日：2010-04-01

申请号：US12630378

申请日：2009-12-03

Applicant: Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

Inventor： Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

IPC: G01N23/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31762 ,  H01J2237/31769

Abstract: High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.

Abstract translation: 通过使用小剂量的电子束进行高对比度曝光，以高精度在晶片上形成图案，进行高精度检查。 在图案形成中，执行邻近效应校正处理。 此外，基于使用电子束的曝光特性的逆特性的滤波结果来执行电子束的曝光。 此外，在图案检查中，基于滤波结果照射电子束，以获得形成的图案的边缘的周边区域。

公开(公告)号：US07635851B2

公开(公告)日：2009-12-22

申请号：US11519872

申请日：2006-09-13

Applicant: Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

Inventor： Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

IPC: H01J37/08

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31762 ,  H01J2237/31769

Abstract: High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.

Abstract translation: 通过使用小剂量的电子束进行高对比度曝光，以高精度在晶片上形成图案，进行高精度检查。 在图案形成中，执行邻近效应校正处理。 此外，基于使用电子束的曝光特性的逆特性的滤波结果来执行电子束的曝光。 此外，在图案检查中，基于滤波结果照射电子束，以获得形成的图案的边缘的周边区域。

公开(公告)号：US08692218B2

公开(公告)日：2014-04-08

申请号：US11762180

申请日：2007-06-13

Applicant: Masato Muraki ,  Haruo Yoda

Inventor： Masato Muraki ,  Haruo Yoda

IPC: G01B15/00

CPC classification number: H01J37/304 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/043 ,  H01J2237/24507 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: An exposure apparatus which draws a pattern on a substrate with a charged particle beam is disclosed. The exposure apparatus includes a blanker which controls, in accordance with a dose pattern including a plurality of pulses, whether to allow a charged particle beam to strike the substrate, and a controller which executes calibration for correcting the dose pattern to obtain a pattern having the target line width.

Abstract translation: 公开了一种在具有带电粒子束的基板上绘制图案的曝光装置。 曝光装置包括：消除器，其根据包括多个脉冲的剂量图案来控制是否允许带电粒子束撞击衬底;以及控制器，其执行用于校正剂量图案的校准，以获得具有 目标线宽。

公开(公告)号：US20070057200A1

公开(公告)日：2007-03-15

申请号：US11519872

申请日：2006-09-13

Applicant: Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

Inventor： Ryo Fujita ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

IPC: G21G5/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31762 ,  H01J2237/31769

Abstract: High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.

Abstract translation: 通过使用小剂量的电子束进行高对比度曝光，以高精度在晶片上形成图案，进行高精度检查。 在图案形成中，执行邻近效应校正处理。 此外，基于使用电子束的曝光特性的逆特性的滤波结果来执行电子束的曝光。 此外，在图案检查中，基于滤波结果照射电子束，以获得形成的图案的边缘的周边区域。