摘要:
The clock generator of this invention includes: an input shutoff control circuit for receiving a base clock and a reference clock and outputting a first signal and a second signal in response to a reset signal, a phase comparator for outputting a phase difference signal indicating a phase difference between the first signal and the second signal; a voltage control oscillator for outputting a frequency variable clock in correspondence with the phase difference signal; and a voltage fixing control circuit for controlling a voltage of the phase difference signal in response to the reset signal, wherein, when the reset signal is in a first level, the input shutoff control circuit: outputs the base clock to the phase comparator as the first signal and outputs the reference clock to the phase comparator as the second signal, and the voltage fixing control circuit holds the voltage of the phase difference signal, and when the reset signal is in a second level different from the first level, the input shutoff control circuit outputs two signals to the phase comparator as the first signal and the second signal, the phase difference between the two signals being substantially zero, and the voltage fixing control circuit fixing the voltage of the phase difference signal to a predetermined voltage at which the voltage control oscillator does not oscillate.
摘要:
A semiconductor integrated circuit has a first substrate of a first polarity to which a first substrate potential is given, a second substrate of the first polarity to which a second substrate potential different from the first substrate potential is given, and a third substrate of a second polarity different from the first polarity. The first substrate is insulated from a power source or ground to which a source of a MOSFET formed on the substrate is connected. The third substrate is disposed between the first and second substrates in adjacent relation to the first and second substrates. A circuit element is formed on the third substrate.
摘要:
Logic circuit information in which flip-flops of a semiconductor integrated circuit subjected to designing and a logic circuit between flip-flops are defined is input. The logic circuit information is analyzed to detect a logic circuit sandwiched by two flip-flops. The number of logic stages of the detected logic circuit is counted. It is determined, according to the counted number of logic stages, to which substrate potential a cell used for the logic circuit is to be connected.
摘要:
In an electronic device according to the present invention, a source of the first signal-wire drive transistor is connected to a first power supply, a drain of the first signal-wire drive transistor is connected to a signal wire, and a control circuit controls a gate voltage so that a current flowing in the signal wire is amplified toward a voltage to which a potential of the signal wire transits during the potential transition in the signal wire and further controls the gate voltage so that a voltage value obtained after the potential transition in the signal wire is retained after the potential transition in the signal wire.
摘要:
In a dynamic flip-flop circuit with a data selection function, for example, when data having an H value has been selected using a selection signal S0, a first node N1 is L and a second node N2 of a second dynamic circuit 1B is H, so that an output signal Q has an H level. In this case, when none of a plurality of pieces of data D0 to D2 is selected using selection signals S0 to S2, the first node N1 is H, so that the electric charge of the second node N2 is discharged and the output signal Q erroneously has an L level. However, in this case, an output node N3 is H and a fourth node N4 is L, so that an n-type transistor Tr6 of the second dynamic circuit 1B is turned OFF, thereby preventing the second node N2 from being discharged. Therefore, a normal operation is performed while securing a satisfactorily high-speed operation even when none of the pieces of data is selected. This circuit is used in a predetermined circuit, such as, for example, a forwarding path of a data path, a crossbar bus switch, or an input portion of a reconfigurable processing unit.
摘要:
A semiconductor integrated circuit has a first substrate of a first polarity to which a first substrate potential is given, a second substrate of the first polarity to which a second substrate potential different from the first substrate potential is given, and a third substrate of a second polarity different from the first polarity. The first substrate is insulated from a power source or ground to which a source of a MOSFET formed on the substrate is connected. The third substrate is disposed between the first and second substrates in adjacent relation to the first and second substrates. A circuit element is formed on the third substrate.
摘要:
It is an object of the present invention to provide a semiconductor integrated circuit having a chip layout that reduces line length to achieve faster processing. A cache comprises a TAG memory module and a cache data memory module. The cache data memory module is divided into first and second cache data memory modules which are disposed on both sides of the TAG memory module, and input/output circuits of a data TLB are opposed to the input/output circuit of the TAG memory module and the input/output circuits of the first and second cache data memory modules across a bus area to reduce the line length to achieve faster processing.
摘要:
In a semiconductor integrated circuit of the present invention, the main circuit 2 includes MOS transistors in which the source and the substrate are separated from each other. The substrate potential control circuit 1 controls the substrate potential of the MOS transistors of the main circuit 2 so that the actual saturation current value of the MOS transistors of the main circuit 2 is equal to the target saturation current value Ids under the operating power supply voltage Vdd of the main circuit 2. Therefore, it is possible to suppress variations in the operation speed even if the operating power supply voltage of the semiconductor integrated circuit is reduced.
摘要:
In a dynamic flip-flop circuit with a data selection function, for example, when data having an H value is selected using a selection signal, a first node N1 is L, a second node N2 of a second dynamic circuit is H, so that an output signal has an H level. In this case, when none of a plurality of pieces of data is selected using a selection signal, the first node N1 is H, so that the electric charge of the second node N2 is discharged and the output signal erroneously has an L level. However, in this case, an output node N3 is H and a fourth node N4 is L, so that an n-type transistor of the second dynamic circuit is turned OFF, thereby preventing the second node N2 from being discharged. Therefore, a normal operation is performed while securing a satisfactorily high-speed operation even when none of the pieces of data is selected.
摘要:
A semiconductor integrated circuit device according to the present invention includes: a sample circuit in which through current to be monitored flows during switching between transistors; a non-overlap circuit for outputting an output signal for the switching in the sample circuit; a current detector for detecting the through current flowing during the switching; and a current comparator in which a reference current value with respect to the through current has been set and which compares a current value detected by the current detector with the reference current value and outputs a result of the comparison to the non-overlap circuit.