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1.发明授权公开(公告)号：US07301421B2
公开(公告)日：2007-11-27
申请号：US11169160
申请日：2005-06-28
申请人： Yuuko Yokota , Masayuki Funami , Takanori Ikuta , Wataru Koga , Yoshifumi Yamagata , Motoki Ito , Kiyohiro Iioka
发明人： Yuuko Yokota , Masayuki Funami , Takanori Ikuta , Wataru Koga , Yoshifumi Yamagata , Motoki Ito , Kiyohiro Iioka
CPC分类号： H03H9/02921 , H01L2224/97 , H01L2924/16195 , H03H3/08 , H03H9/02874 , H03H9/0576 , H03H9/059 , H03H9/1085 , H03H9/72 , H03H9/725
摘要： A conductor layer 10 is provided so as to prevent pyroelectric destruction occurring in the steps of manufacturing a surface acoustic wave element 1 on the other surface opposite to an IDT electrode formation surface of a piezoelectric substrate 2. At this time, the conductor layer 10 is formed, except for a region 5a opposed to an input electrode section 5 in a filter region 9 and/or a region 6a opposed to an output electrode section 6. This allows a coupling amount between the input electrode section 5 and the output electrode section 6 due to a parasitic capacitance formed between the input electrode section 5 and the output electrode section 6 in the filter region 9 to be reduced, thereby allowing the out-of-band attenuation characteristics of a surface acoustic wave device to be improved.
摘要翻译： 在与压电基板2的IDT电极形成面相反的另一面上制造表面声波元件1的步骤中，设置导体层10，以防止发生热电破坏。 此时，除了与输出电极部6相对的过滤器区域9和/或区域6a中的与输入电极部5相对的区域5a之外，还形成导体层10。 这允许由于在滤波器区域9中形成的输入电极部分5和输出电极部分6之间形成的寄生电容而使输入电极部分5与输出电极部分6之间的耦合量减小，从而允许 提高声表面波器件的带衰减特性。
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2.发明申请Surface acoustic wave resonator, surface acoustic wave filter and surface acoustic wave duplexer, and communications equipment 失效表面声波谐振器，表面声波滤波器和表面声波双工器，以及通讯设备公开(公告)号：US20060214748A1
公开(公告)日：2006-09-28
申请号：US11392484
申请日：2006-03-28
申请人： Masayuki Funami , Yuuko Yokota , Kiyohiro Iioka
发明人： Masayuki Funami , Yuuko Yokota , Kiyohiro Iioka
IPC分类号： H03H9/64
CPC分类号： H03H9/725 , H03H9/02771 , H03H9/0576 , H03H9/643
摘要： Disclosed is a surface acoustic wave resonator which comprises, on a piezoelectric substrate 19, an IDT electrode 1 including bus bar electrodes 12a, reflector electrodes 2 disposed to be adjacent to both sides of the IDT electrode 1 in a main propagation direction F of surface acoustic waves at the IDT electrode 1, and auxiliary reflector electrodes 3 that are disposed at four positions external to the reflector electrodes 2 on virtual straight lines extending from the bus bar electrodes 12a of the IDT electrode 1 in an inclined manner so that the periodic direction G of periodically arranged electrodes 14b is oriented toward the IDT electrode 1.
摘要翻译： 公开了一种表面声波谐振器，其在压电基板19上包括IDT电极1，其包括汇流条电极12a，反射器电极2，该反射器电极2设置成与IDT电极1的主表面的主传播方向F相邻 IDT电极1的声波和辅助反射器电极3设置在反射器电极2的外部的四个位置处，以从IDT电极1的汇流条电极12a倾斜的方式延伸的虚拟直线上，使得周期性 周向布置的电极14b的方向G朝向IDT电极1。
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3.发明授权公开(公告)号：US07307369B2
公开(公告)日：2007-12-11
申请号：US11212504
申请日：2005-08-26
IPC分类号： H01L41/04
CPC分类号： H03H9/1085 , H01L2224/16225 , H01L2924/16195 , H03H3/08 , H03H9/02622 , H03H9/02874 , H03H9/059 , H03H9/1092 , H03H9/6483 , H03H9/725
摘要： An IDT electrode 3, and an input electrode section 5 and an output electrode section 6 each connecting with the IDT electrode 3 are formed in a filter region on one main surface of a piezoelectric substrate 2, and a semiconductor layer 22 is formed on the other main surface opposite to the one main surface of the piezoelectric substrate 2. The semiconductor layer 22 makes it possible to prevent pyroelectric destruction in the device manufacturing process as well as to prevent out-of-band attenuation characteristics from being degraded.
摘要翻译： 在压电基板2的一个主表面上的过滤器区域中形成有与IDT电极3连接的IDT电极3，输入电极部5和输出电极部6，并且在另一个主表面上形成半导体层22 主表面与压电基片2的一个主表面相对。 半导体层22使得可以防止器件制造工艺中的热释电破坏以及防止带外衰减特性的劣化。
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4.发明授权Surface acoustic wave resonator, surface acoustic wave filter and surface acoustic wave duplexer, and communications equipment 失效表面声波谐振器，表面声波滤波器和表面声波双工器，以及通讯设备公开(公告)号：US07453335B2
公开(公告)日：2008-11-18
申请号：US11392484
申请日：2006-03-28
申请人： Masayuki Funami , Yuuko Yokota , Kiyohiro Iioka
发明人： Masayuki Funami , Yuuko Yokota , Kiyohiro Iioka
CPC分类号： H03H9/725 , H03H9/02771 , H03H9/0576 , H03H9/643
摘要： Disclosed is a surface acoustic wave resonator which comprises, on a piezoelectric substrate 19, an IDT electrode 1 including bus bar electrodes 12a, reflector electrodes 2 disposed to be adjacent to both sides of the IDT electrode 1 in a main propagation direction F of surface acoustic waves at the IDT electrode 1, and auxiliary reflector electrodes 3 that are disposed at four positions external to the reflector electrodes 2 on virtual straight lines extending from the bus bar electrodes 12a of the IDT electrode 1 in an inclined manner so that the periodic direction G of periodically arranged electrodes 14b is oriented toward the IDT electrode 1.
摘要翻译： 公开了一种表面声波谐振器，其在压电基板19上包括IDT电极1，其包括汇流条电极12a，反射器电极2，该反射器电极2设置成与IDT电极1的两侧在主表面的主传播方向F相邻 IDT电极1的声波和辅助反射器电极3设置在反射器电极2的外部的四个位置处，以从IDT电极1的汇流条电极12a倾斜的方式延伸的虚拟直线上，使得周期性 周向布置的电极14b的方向G朝向IDT电极1。
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5.发明申请公开(公告)号：US20060043822A1
公开(公告)日：2006-03-02
申请号：US11212504
申请日：2005-08-26
IPC分类号： H03H9/25
CPC分类号： H03H9/1085 , H01L2224/16225 , H01L2924/16195 , H03H3/08 , H03H9/02622 , H03H9/02874 , H03H9/059 , H03H9/1092 , H03H9/6483 , H03H9/725
摘要： An IDT electrode 3, and an input electrode section 5 and an output electrode section 6 each connecting with the IDT electrode 3 are formed in a filter region on one main surface of a piezoelectric substrate 2, and a semiconductor layer 22 is formed on the other main surface opposite to the one main surface of the piezoelectric substrate 2. The semiconductor layer 22 makes it possible to prevent pyroelectric destruction in the device manufacturing process as well as to prevent out-of-band attenuation characteristics from being degraded.
摘要翻译： 在压电基板2的一个主表面上的过滤器区域中形成有与IDT电极3连接的IDT电极3，输入电极部5和输出电极部6，并且在另一个主表面上形成半导体层22 主表面与压电基片2的一个主表面相对。 半导体层22使得可以防止器件制造工艺中的热释电破坏以及防止带外衰减特性的劣化。
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6.发明申请公开(公告)号：US20050285699A1
公开(公告)日：2005-12-29
申请号：US11169160
申请日：2005-06-28
申请人： Yuuko Yokota , Masayuki Funami , Takanori Ikuta , Wataru Koga , Yoshifumi Yamagata , Motoki Ito , Kiyohiro Iioka
发明人： Yuuko Yokota , Masayuki Funami , Takanori Ikuta , Wataru Koga , Yoshifumi Yamagata , Motoki Ito , Kiyohiro Iioka
CPC分类号： H03H9/02921 , H01L2224/97 , H01L2924/16195 , H03H3/08 , H03H9/02874 , H03H9/0576 , H03H9/059 , H03H9/1085 , H03H9/72 , H03H9/725
摘要： A conductor layer 10 is provided so as to prevent pyroelectric destruction occurring in the steps of manufacturing a surface acoustic wave element 1 on the other surface opposite to an IDT electrode formation surface of a piezoelectric substrate 2. At this time, the conductor layer 10 is formed, except for a region 5a opposed to an input electrode section 5 in a filter region 9 and/or a region 6a opposed to an output electrode section 6. This allows a coupling amount between the input electrode section 5 and the output electrode section 6 due to a parasitic capacitance formed between the input electrode section 5 and the output electrode section 6 in the filter region 9 to be reduced, thereby allowing the out-of-band attenuation characteristics of a surface acoustic wave device to be improved.
摘要翻译： 在与压电基板2的IDT电极形成面相反的另一面上制造表面声波元件1的步骤中，设置导体层10，以防止发生热电破坏。 此时，除了与输出电极部6相对的过滤器区域9和/或区域6a中的与输入电极部5相对的区域5a之外，还形成导体层10。 这允许由于在滤波器区域9中形成的输入电极部分5和输出电极部分6之间形成的寄生电容而使输入电极部分5与输出电极部分6之间的耦合量减小，从而允许 提高声表面波器件的带衰减特性。
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7.发明授权公开(公告)号：US07389570B2
公开(公告)日：2008-06-24
申请号：US11169141
申请日：2005-06-27
申请人： Yuuko Yokota , Motoki Ito , Kiyohiro Iioka , Wataru Koga , Shigehiko Nagamine
发明人： Yuuko Yokota , Motoki Ito , Kiyohiro Iioka , Wataru Koga , Shigehiko Nagamine
IPC分类号： H03H3/08
CPC分类号： H03H9/02913 , H03H3/08 , H03H9/0576 , H03H9/72 , H03H9/725 , Y10T29/42 , Y10T29/49005 , Y10T29/4908 , Y10T29/4913 , Y10T29/49146 , Y10T29/49155
摘要： After electrode patterning on an electrode forming surface of a piezoelectric substrate 2 (FIG. 1(b)), a conductor layer is formed on an electrode non-forming surface of the piezoelectric substrate 2 (FIG. 1(c)). After forming the conductor layer, the conductor layer formed on the other surface is removed (FIG. 1(f)) after at least one step (FIG. 1(e)), and thereafter, dicing for separation into elements and mounting on a mounting substrate are carried out. By removing all the conductor layer on the other surface of the piezoelectric substrate, the out-of-passband attenuation and isolation performance can be significantly improved.
摘要翻译： 在压电基板2的电极形成表面上的电极图案化之后（图1（b）），在压电基板2的非电极形成表面上形成导体层（图1（c））。 在形成导体层之后，在至少一个步骤（图1（e））之后，除去形成在另一个表面上的导体层（图1（f）），然后，分离成元件并安装在导体层上 执行安装基板。 通过去除压电基板的另一表面上的所有导体层，可以显着地提高通带衰减和隔离性能。
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8.发明申请公开(公告)号：US20060022768A1
公开(公告)日：2006-02-02
申请号：US11190515
申请日：2005-07-27
申请人： Yuuko Yokota , Yoshifumi Yamagata , Kiyohiro Iioka
发明人： Yuuko Yokota , Yoshifumi Yamagata , Kiyohiro Iioka
CPC分类号： H03H9/1085 , H01L2224/16225 , H03H9/02574 , H03H9/02614 , H03H9/02952 , H03H9/02984 , H03H9/0576 , H03H9/059 , H03H9/1092 , H03H9/72 , H03H9/725
摘要： A second substrate 21 composed of a material having a lower dielectric constant than that of a piezoelectric substrate 2 having a transmission-side filter region 12 and a receiving-side filter region 13 formed therein is joined to the other main surface of the piezoelectric substrate 2, and a conductor layer 22 is formed throughout the other main surface of the second substrate 21. The effective dielectric constant of the substrate is reduced, thereby making it possible to reduce a parasitic capacitance formed between an input electrode section 5 in the transmission-side filter region 12 and an output electrode section 6 in the receiving-side filter region 13 and to improve isolation characteristics.
摘要翻译： 由具有比具有形成在其中的透射侧滤光区12和接收侧滤光区13的压电基片2的介电常数低的材料构成的第二基片21与压电基片2的另一个主表面 并且在第二基板21的整个另一个主表面上形成导体层22。 降低了衬底的有效介电常数，从而可以减小发送侧滤波器区域12中的输入电极部分5和接收侧滤波器区域13中的输出电极部分6之间形成的寄生电容，并且 提高隔离特性。
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9.发明申请公开(公告)号：US20050285475A1
公开(公告)日：2005-12-29
申请号：US11169141
申请日：2005-06-27
申请人： Yuuko Yokota , Motoki Ito , Kiyohiro Iioka , Wataru Koga , Shigehiko Nagamine
发明人： Yuuko Yokota , Motoki Ito , Kiyohiro Iioka , Wataru Koga , Shigehiko Nagamine
CPC分类号： H03H9/02913 , H03H3/08 , H03H9/0576 , H03H9/72 , H03H9/725 , Y10T29/42 , Y10T29/49005 , Y10T29/4908 , Y10T29/4913 , Y10T29/49146 , Y10T29/49155
摘要： After electrode patterning on an electrode forming surface of a piezoelectric substrate 2 (FIG. 1(b)), a conductor layer is formed on an electrode non-forming surface of the piezoelectric substrate 2 (FIG. 1(c)). After forming the conductor layer, the conductor layer formed on the other surface is removed (FIG. 1(f)) after at least one step (FIG. 1(e)), and thereafter, dicing for separation into elements and mounting on a mounting substrate are carried out. By removing all the conductor layer on the other surface of the piezoelectric substrate, the out-of-passband attenuation and isolation performance can be significantly improved.
摘要翻译： 在压电基板2的电极形成表面上的电极图案化之后（图1（b）），在压电基板2的非电极形成表面上形成导体层（图1（c））。 在形成导体层之后，在至少一个步骤（图1（e））之后，除去形成在另一个表面上的导体层（图1（f）），然后，分离成元件并安装在导体层上 执行安装基板。 通过去除压电基板的另一表面上的所有导体层，可以显着地提高通带衰减和隔离性能。
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10.发明授权公开(公告)号：US07609129B2
公开(公告)日：2009-10-27
申请号：US11190515
申请日：2005-07-27
申请人： Yuuko Yokota , Yoshifumi Yamagata , Kiyohiro Iioka
发明人： Yuuko Yokota , Yoshifumi Yamagata , Kiyohiro Iioka
CPC分类号： H03H9/1085 , H01L2224/16225 , H03H9/02574 , H03H9/02614 , H03H9/02952 , H03H9/02984 , H03H9/0576 , H03H9/059 , H03H9/1092 , H03H9/72 , H03H9/725
摘要： A second substrate 21 composed of a material having a lower dielectric constant than that of a piezoelectric substrate 2 having a transmission-side filter region 12 and a receiving-side filter region 13 formed therein is joined to the other main surface of the piezoelectric substrate 2, and a conductor layer 22 is formed throughout the other main surface of the second substrate 21. The effective dielectric constant of the substrate is reduced, thereby making it possible to reduce a parasitic capacitance formed between an input electrode section 5 in the transmission-side filter region 12 and an output electrode section 6 in the receiving-side filter region 13 and to improve isolation characteristics.
摘要翻译： 由具有比具有形成在其中的透射侧滤光区12和接收侧滤光区13的压电基片2的介电常数低的材料构成的第二基片21与压电基片2的另一个主表面 并且在第二基板21的另一个主表面上形成导体层22.基板的有效介电常数降低，从而可以减小在发送侧的输入电极部5之间形成的寄生电容 滤波器区域12和输出电极部分6，并提高隔离特性。
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