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    Semiconductor device, semiconductor laser, their manufacturing methods and etching methods
    4.
    发明申请
    Semiconductor device, semiconductor laser, their manufacturing methods and etching methods 审中-公开
    半导体器件，半导体激光器，其制造方法和蚀刻方法

    公开(公告)号：US20050194634A1

    公开(公告)日：2005-09-08

    申请号：US11121952

    申请日：2005-05-05

    申请人： Masayuki Ishikawa ,  Shin-Ya Nunoue

    发明人： Masayuki Ishikawa ,  Shin-Ya Nunoue

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/32 ,  H01S5/22 ,  H01S5/223 ,  H01S5/24 ,  H01S5/323 ,  H01S5/343 ,  H01L29/792

    CPC分类号： B82Y20/00 ,  H01S5/2206 ,  H01S5/222 ,  H01S5/2232 ,  H01S5/34333

    摘要： To provide a semiconductor device, such as semiconductor laser, having no need of complicated process, ensuring a high yield and mass-productivity necessary for cost reduction, and exhibiting excellent initial characteristics and reliability, nitride semiconductor layers containing a plurality of group III elements are formed on a base body surface having recess (opening) such that the nitride semiconductor layer varies in at least one of composition ratio of the group III elements, band gap energy, refractive index, electrical conductivity and specific resistance within the layer in response to the recess of the base body. In addition, by heating the structure in an atmosphere containing hydrogen and using a layer containing Al as an etching stop layer, controllability and production yield can be improved without influences from fluctuation in etching depth, or the like. Further, etching and re-growth can be conducted consecutively to provide an inexpensive process.

    摘要翻译： 为了提供不需要复杂工艺的诸如半导体激光器的半导体器件，确保成本降低所需的高产率和批量生产率，并且显示出优异的初始特性和可靠性，包含多个III族元素的氮化物半导体层是 形成在具有凹部（开口）的基体表面上，使得氮化物半导体层响应于第III族元素的组成比，带隙能量，折射率，电导率和电阻率中的至少一种而变化 基体凹陷。 此外，通过在包含氢的气氛中加热结构并使用含有Al作为蚀刻停止层的层，可以提高可控性和生产率，而不受蚀刻深度的波动等的影响。 此外，可以连续进行蚀刻和再生长以提供廉价的工艺。

    Optical device, surface emitting type device and method for manufacturing the same
    5.
    发明授权
    Optical device, surface emitting type device and method for manufacturing the same 失效
    光学元件，表面发射型器件及其制造方法

    公开(公告)号：US07306961B2

    公开(公告)日：2007-12-11

    申请号：US11409045

    申请日：2006-04-24

    申请人： Shin-Ya Nunoue ,  Masayuki Ishikawa

    发明人： Shin-Ya Nunoue ,  Masayuki Ishikawa

    IPC分类号： H01L21/00

    CPC分类号： H01L33/105 ,  B82Y20/00 ,  G02B6/4214 ,  H01L33/46 ,  H01L33/465 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/1835 ,  H01S5/18361 ,  H01S5/18363 ,  H01S5/209 ,  H01S5/34333 ,  H01S2304/04

    摘要： The present invention provides an optical device and a surface emitting type device which have high efficiency and a stable operation and are manufactured at high manufacturing yield. The optical device and the surface emitting type device are characterized in that they have a distributed Bragg reflector (DBR) including a plurality of semiconductor layers made of a nitride semiconductor with substantially same gaps therbetween. Further, the optical device and the surface emitting type device are characterized in that they have a distributed Bragg reflector (DBR) in which a plurality of semiconductor layers made of nitride semiconductor and a plurality of organic layers made of organic material are alternately laminated.

    摘要翻译： 本发明提供了具有高效率和稳定操作并以高制造成品率制造的光学装置和表面发射型装置。 光学器件和表面发射型器件的特征在于它们具有分布式布拉格反射器（DBR），其包括由氮化物半导体制成的多个半导体层，其间具有大致相同的间隙。 此外，光学器件和表面发射型器件的特征在于它们具有分布式布拉格反射器（DBR），其中由氮化物半导体制成的多个半导体层和由有机材料制成的多个有机层交替层叠。

    Semiconductor device, semiconductor laser, their manufacturing methods and etching methods
    6.
    发明授权
    Semiconductor device, semiconductor laser, their manufacturing methods and etching methods 失效

    公开(公告)号：US07026182B2

    公开(公告)日：2006-04-11

    申请号：US10816929

    申请日：2004-04-05

    申请人： Masayuki Ishikawa ,  Shin-Ya Nunoue

    发明人： Masayuki Ishikawa ,  Shin-Ya Nunoue

    IPC分类号： H01L21/00 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/2206 ,  H01S5/222 ,  H01S5/2232 ,  H01S5/34333

    摘要： To provide a semiconductor device, such as semiconductor laser, having no need of complicated process, ensuring a high yield and mass-productivity necessary for cost reduction, and exhibiting excellent initial characteristics and reliability, nitride semiconductor layers containing a plurality of group III elements are formed on a base body surface having recess (opening) such that the nitride semiconductor layer varies in at least one of composition ratio of the group III elements, band gap energy, refractive index, electrical conductivity and specific resistance within the layer in response to the recess of the base body. In addition, by heating the structure in an atmosphere containing hydrogen and using a layer containing Al as an etching stop layer, controllability and production yield can be improved without influences from fluctuation in etching depth, or the like. Further, etching and re-growth can be conducted consecutively to provide an inexpensive process.

    Semiconductor device, semiconductor laser, their manufacturing methods and etching methods
    7.
    发明授权
    Semiconductor device, semiconductor laser, their manufacturing methods and etching methods 有权
    半导体器件，半导体激光器，其制造方法和蚀刻方法

    公开(公告)号：US06741623B2

    公开(公告)日：2004-05-25

    申请号：US09893610

    申请日：2001-06-29

    申请人： Masayuki Ishikawa ,  Shin-Ya Nunoue

    发明人： Masayuki Ishikawa ,  Shin-Ya Nunoue

    IPC分类号： H01L3300

    CPC分类号： B82Y20/00 ,  H01S5/2206 ,  H01S5/222 ,  H01S5/2232 ,  H01S5/34333

    摘要： To provide a semiconductor device, such as semiconductor laser, having no need of complicated process, ensuring a high yield and mass-productivity necessary for cost reduction, and exhibiting excellent initial characteristics and reliability, nitride semiconductor layers containing a plurality of group III elements are formed on a base body surface having recess (opening) such that the nitride semiconductor layer varies in at least one of composition ratio of the group III elements, band gap energy, refractive index, electrical conductivity and specific resistance within the layer in response to the recess of the base body. In addition, by heating the structure in an atmosphere containing hydrogen and using a layer containing Al as an etching stop layer, controllability and production yield can be improved without influences from fluctuation in etching depth, or the like. Further, etching and re-growth can be conducted consecutively to provide an inexpensive process.

    摘要翻译： 为了提供不需要复杂工艺的诸如半导体激光器的半导体器件，确保成本降低所需的高产率和批量生产率，并且显示出优异的初始特性和可靠性，包含多个III族元素的氮化物半导体层是 形成在具有凹部（开口）的基体表面上，使得氮化物半导体层响应于第III族元素的组成比，带隙能量，折射率，电导率和电阻率中的至少一种而变化 基体凹陷。 此外，通过在包含氢的气氛中加热结构并使用含有Al作为蚀刻停止层的层，可以提高可控性和生产率，而不受蚀刻深度的波动等的影响。 此外，可以连续进行蚀刻和再生长以提供廉价的工艺。