公开(公告)号：US20070037292A1

公开(公告)日：2007-02-15

申请号：US11585137

申请日：2006-10-24

申请人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

发明人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

IPC分类号： G01N1/00

CPC分类号： G01N1/32 ,  H01L21/67201 ,  H01L21/67742 ,  H01L21/67751 ,  Y10T436/25

摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g. plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

摘要翻译： 公开了用于处理样品的装置以及使用该装置的方法。 该设备包括用于处理样品（例如等离子体蚀刻设备）的处理设备（a），（b）用于除去由样品处理形成的残余腐蚀性化合物，（c）用于湿法处理样品，（d） 处理样品。 可以进行多个样品的湿法处理。 湿式处理装置可以包括多个湿加工站。 样品可以通过多个湿处理站串联通过，或者可以通过湿处理站并行通过。

公开(公告)号：US06989228B2

公开(公告)日：2006-01-24

申请号：US09917912

申请日：2001-07-31

申请人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

发明人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

IPC分类号： H01L21/461

CPC分类号： H01L21/67069 ,  H01L21/02071 ,  H01L21/31138 ,  H01L21/67028 ,  H01L21/67173 ,  H01L21/67745 ,  Y10S438/963 ,  Y10T436/11 ,  Y10T436/25 ,  Y10T436/2575

摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

公开(公告)号：US06656846B2

公开(公告)日：2003-12-02

申请号：US09847406

申请日：2001-05-03

申请人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

发明人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

IPC分类号： H01L213065

CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01J37/185 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67751

摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

公开(公告)号：US5868854A

公开(公告)日：1999-02-09

申请号：US987171

申请日：1992-12-08

申请人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

发明人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

IPC分类号： C23F4/00 ,  H01J37/18 ,  H01L21/00 ,  H01L21/3213 ,  H01L21/461 ,  H01L21/677 ,  B08B6/00 ,  H01L21/302

CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01J37/185 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67751

摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

公开(公告)号：US06537417B2

公开(公告)日：2003-03-25

申请号：US09985308

申请日：2001-11-02

申请人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

发明人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

IPC分类号： H01L213065

CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01J37/185 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67751

摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

公开(公告)号：US6036816A

公开(公告)日：2000-03-14

申请号：US470442

申请日：1995-06-06

申请人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

发明人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

IPC分类号： C23F4/00 ,  H01J37/18 ,  H01L21/00 ,  H01L21/3213 ,  H01L21/461 ,  H01L21/677 ,  H01L21/306

CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01J37/185 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67751

摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

摘要翻译： 公开了用于处理样品的装置以及使用该装置的方法。 该设备包括用于处理样品（例如，等离子体蚀刻设备）的处理设备（a），（b）用于除去由样品处理形成的残余腐蚀性化合物，（c）用于湿法处理样品和（d）干燥 处理样品。 可以进行多个样品的湿法处理。 湿式处理装置可以包括多个湿加工站。 样品可以通过多个湿处理站串联通过，或者可以通过湿处理站并行通过。

公开(公告)号：US06537415B2

公开(公告)日：2003-03-25

申请号：US09942707

申请日：2001-08-31

申请人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

发明人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

IPC分类号： H01L213065

CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01J37/185 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67751

摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

公开(公告)号：US06254721B1

公开(公告)日：2001-07-03

申请号：US09504083

申请日：2000-02-15

申请人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

发明人： Masayuki Kojima ,  Yoshimi Torii ,  Michimasa Hunabashi ,  Kazuyuki Suko ,  Takashi Yamada ,  Keizo Kuroiwa ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

IPC分类号： H01L21306

CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01J37/185 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67751

摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

摘要翻译： 公开了用于处理样品的装置以及使用该装置的方法。 该设备包括用于处理样品（例如，等离子体蚀刻设备）的处理设备（a），（b）用于除去由样品处理形成的残余腐蚀性化合物，（c）用于湿法处理样品和（d）干燥 处理样品。 可以进行多个样品的湿法处理。 湿式处理装置可以包括多个湿加工站。 样品可以通过多个湿处理站串联通过，或者可以通过湿处理站并行通过。

公开(公告)号：US6077788A

公开(公告)日：2000-06-20

申请号：US469998

申请日：1995-06-06

申请人： Yoshinao Kawasaki ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Kazuo Nojiri ,  Yoshimi Torii

发明人： Yoshinao Kawasaki ,  Hironobu Kawahara ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Kazuo Nojiri ,  Yoshimi Torii

IPC分类号： C23F4/00 ,  H01L21/00 ,  H01L21/677 ,  H01L21/302 ,  C23F1/02

CPC分类号： H01L21/67161 ,  C23F4/00 ,  H01L21/67028 ,  H01L21/67745 ,  H01L21/67751

摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus, the samples being selectively etched through use of a resist mask), (b) for removing (ashing) the resist mask, (c) for wet-processing of the samples and (d) for dry-processing the samples. Samples are passed sequentially from a supply cassette (containing a plurality of samples) to the plasma etching apparatus, through the other apparatus and to a discharge cassette (which can hold a plurality of the samples). At least two of the samples can be processed simultaneously in a path from (and including), the plasma etching apparatus to (and including) the wet-processing structure.

摘要翻译： 公开了用于处理样品的装置以及使用该装置的方法。 该装置包括用于处理样品的处理装置（例如，等离子体蚀刻装置，通过使用抗蚀剂掩模选择性地蚀刻样品），（b）去除（灰化）抗蚀剂掩模，（c） 处理样品和（d）干燥处理样品。 样品从供应盒（含有多个样品）顺序地通过另一个装置和放电盒（可以容纳多个样品）通过等离子体蚀刻装置。 至少两个样品可以在等离子体蚀刻装置（并且包括）湿法处理结构的路径中（并且包括）的同时进行处理。

公开(公告)号：US5952245A

公开(公告)日：1999-09-14

申请号：US721584

申请日：1996-09-25

申请人： Yoshimi Torii ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

发明人： Yoshimi Torii ,  Kazuo Nojiri ,  Yoshinao Kawasaki ,  Yoshiaki Sato ,  Ryooji Fukuyama ,  Hironobu Kawahara

IPC分类号： C23F4/00 ,  H01J37/18 ,  H01L21/00 ,  H01L21/3213 ,  H01L21/461 ,  H01L21/677

CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01J37/185 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67751

摘要： Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

摘要翻译： 公开了用于处理样品的装置以及使用该装置的方法。 该设备包括用于处理样品（例如，等离子体蚀刻设备）的处理设备（a），（b）用于除去由样品处理形成的残余腐蚀性化合物，（c）用于湿法处理样品和（d）干燥 处理样品。 可以进行多个样品的湿法处理。 湿式处理装置可以包括多个湿加工站。 样品可以通过多个湿处理站串联通过，或者可以通过湿处理站并行通过。