-
公开(公告)号：US09970126B2
公开(公告)日：2018-05-15
申请号：US14770194
申请日：2014-02-20
发明人： Richard J. Molnar
IPC分类号： C30B23/02 , C30B25/18 , C30B29/40 , H01L31/0304 , C30B7/10 , C30B9/04 , C30B25/20 , C30B29/36 , H01L21/02
CPC分类号： C30B23/025 , C30B7/105 , C30B9/04 , C30B25/183 , C30B25/20 , C30B29/36 , C30B29/40 , C30B29/406 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L31/03044 , Y02E10/544
摘要： Herein is provided a growth structure for forming a free-standing layer of crystalline material having at least one crystallographic symmetry. The growth structure includes a host substrate and a separation layer disposed on the host substrate for growth of a layer of the crystalline material thereon. The separation layer has a separation layer thickness, and is mechanically weaker than the host substrate and the crystalline material. An array of apertures is in the separation layer, each aperture extending through the separation layer thickness.
-
公开(公告)号：US20160002822A1
公开(公告)日：2016-01-07
申请号：US14770194
申请日：2014-02-20
发明人： Richard J. Molnar
CPC分类号： C30B23/025 , C30B7/105 , C30B9/04 , C30B25/183 , C30B25/20 , C30B29/36 , C30B29/40 , C30B29/406 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L31/03044 , Y02E10/544
摘要： Herein is provided a growth structure for forming a free-standing layer of crystalline material having at least one crystallographic symmetry. The growth structure includes a host substrate and a separation layer disposed on the host substrate for growth of a layer of the crystalline material thereon. The separation layer has a separation layer thickness, and is mechanically weaker than the host substrate and the crystalline material. An array of apertures is in the separation layer, each aperture extending through the separation layer thickness.
摘要翻译： 本发明提供一种用于形成具有至少一种结晶对称性的结晶材料的独立层的生长结构。 生长结构包括主体衬底和设置在主体衬底上用于在其上生长结晶材料层的分离层。 分离层具有分离层厚度，并且比主体衬底和结晶材料机械地弱。 孔的阵列位于分离层中，每个孔延伸穿过分离层的厚度。
-
搜索结果
2 条记录 (耗时 0.014 秒)
