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公开(公告)号：US20020125303A1
公开(公告)日：2002-09-12
申请号：US10094773
申请日：2002-03-11
IPC分类号： B23K037/04 , B23K031/02
CPC分类号： H01L24/85 , B23K20/004 , B23K2101/40 , H01L24/45 , H01L24/78 , H01L2224/45144 , H01L2224/78301 , H01L2224/85 , H01L2224/85205 , H01L2924/00014 , H01L2924/01013 , H01L2924/01033 , H01L2924/01039 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , Y10T156/12 , H01L2224/48 , H01L2924/00
摘要： A carrier tool having a protective ring with a sheet extended over an underside of the ring is used, a semiconductor wafer is made to adhere to the sheet, the semiconductor wafer, being surrounded by the protective ring, is carried from a container device to a bonding stage. Bonding is performed on the bonding stage, and the wafer is carried out to another container device, consequently damage of the wafer is avoided.
摘要翻译： 使用具有在环的下侧延伸的片材的保护环的载体工具，使半导体晶片粘附到片材上，由保护环包围的半导体晶片从容器装置被携带到 粘结阶段。 在接合台上进行接合，并且将晶片执行到另一容器装置，从而避免了晶片的损坏。
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公开(公告)号：US20030096451A1
公开(公告)日：2003-05-22
申请号：US10267668
申请日：2002-10-10
IPC分类号： H01L021/44
CPC分类号： H01L24/81 , H01L21/6836 , H01L24/11 , H01L24/75 , H01L2221/68327 , H01L2224/1134 , H01L2224/13099 , H01L2224/13144 , H01L2224/45144 , H01L2224/75 , H01L2224/81801 , H01L2924/01004 , H01L2924/01033 , H01L2924/01039 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A bare chip mounting method includes: a dicing step for dividing a semiconductor wafer into individual IC chips while the semiconductor wafer is being attached to a carrier; a washing step for washing the diced semiconductor wafer; a bump-bonding for carrying the washed semiconductor wafer to an assembly process while the semiconductor wafer is being attached to the carrier so as to form a bump on an electrode pad of the wafer; and a mounting step for mounting each of the IC chips, on which the bump is formed, onto a circuit formation body.
摘要翻译： 裸芯片安装方法包括：切割步骤，用于在将半导体晶片附着到载体上的同时将半导体晶片分成单独的IC芯片; 用于洗涤切割的半导体晶片的洗涤步骤; 用于在将半导体晶片附着到载体上时将用于将洗涤的半导体晶片携带到组装过程的凸块接合，以在晶片的电极焊盘上形成凸块; 以及安装步骤，用于将形成有凸块的每个IC芯片安装到电路形成体上。
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公开(公告)号：US20030094481A1
公开(公告)日：2003-05-22
申请号：US10294614
申请日：2002-11-15
IPC分类号： B23K037/00 , B23K031/00 , B23K031/02
CPC分类号： B23K20/007 , H01L24/11 , H01L24/12 , H01L24/45 , H01L2224/05568 , H01L2224/05571 , H01L2224/05573 , H01L2224/05624 , H01L2224/1134 , H01L2224/13144 , H01L2224/45015 , H01L2224/45144 , H01L2224/78301 , H01L2224/85045 , H01L2224/85205 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01039 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/20306 , H01L2924/20307 , H01L2924/20308 , H01L2924/20309 , H01L2224/13099 , H01L2924/00 , H01L2224/48 , H01L2924/20752
摘要： In a bump bonding technique for forming a bump on an IC, including forming a ball at the tip of a gold wire protruding from a capillary, and providing a metal-to-metal joint by applying ultrasonic vibration from a ultrasonic head through the capillary while pressing the ball against a pad portion on the IC, the metal-to-metal joint is provided by applying the ultrasonic vibration at a frequency in a range of 130 to 320 kHz, more preferably in a range of 170 to 270 kHz, and most preferably at a frequency of 230null10 kHz at room temperatures and atmospheric pressure. Consequently, a bump is formed on an IC having a low heat resistance temperature in a satisfactory joint condition, and a bump is formed with good positional accuracy without giving the influence of heat to the surroundings.
摘要翻译： 在用于在IC上形成凸块的凸块接合技术中，包括在从毛细管突出的金线的尖端处形成球，并且通过从超声波头通过毛细管施加超声波振动来提供金属对金属接头，同时 将球压在IC上的焊盘部分上，通过以130至320kHz的范围内，更优选在170至270kHz的范围内施加超声波振动来提供金属对金属接头，并且大多数 优选在室温和大气压下以230±10kHz的频率进行。 因此，在良好的接合状态下，在具有低耐热温度的IC上形成凸块，并且在没有给周围环境造成热的影响的情况下形成具有良好位置精度的凸块。
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