Patent search cpc:"H01L2924/20306" Page 1

1.

发明申请
SYSTEMS AND METHODS FOR BONDING SEMICONDUCTOR ELEMENTS 有权

公开(公告)号：US20170186627A1

公开(公告)日：2017-06-29

申请号：US15456767

申请日：2017-03-13

Applicant: Kulicke and Soffa Industries, Inc.

Inventor： Robert N. Chylak , Dominick A. DeAngelis , Horst Clauberg

IPC: H01L21/449 , H01L21/762 , H01L25/00 , H01L25/065 , H01L23/00

CPC classification number: H01L21/449 , H01L21/76251 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/48 , H01L24/75 , H01L24/81 , H01L25/03 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2021/60195 , H01L2224/1134 , H01L2224/1145 , H01L2224/11462 , H01L2224/13082 , H01L2224/131 , H01L2224/13109 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13187 , H01L2224/136 , H01L2224/13687 , H01L2224/16148 , H01L2224/16225 , H01L2224/16238 , H01L2224/48091 , H01L2224/48225 , H01L2224/75251 , H01L2224/75252 , H01L2224/75301 , H01L2224/75343 , H01L2224/75348 , H01L2224/75349 , H01L2224/75744 , H01L2224/75745 , H01L2224/759 , H01L2224/81121 , H01L2224/81193 , H01L2224/81201 , H01L2224/81203 , H01L2224/81205 , H01L2224/81207 , H01L2224/81355 , H01L2224/81409 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81801 , H01L2224/81895 , H01L2224/81906 , H01L2224/94 , H01L2225/06513 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01047 , H01L2924/01049 , H01L2924/01079 , H01L2924/01082 , H01L2924/181 , H01L2924/19107 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20301 , H01L2924/20302 , H01L2924/20303 , H01L2924/20304 , H01L2924/20305 , H01L2924/20306 , H01L2924/20307 , H01L2924/01029 , H01L2924/01014 , H01L2924/00012 , H01L2924/014 , H01L2224/8121 , H01L2924/00 , H01L2224/45099 , H01L2224/81 , H01L2924/04941 , H01L2924/04953 , H01L2924/0503 , H01L2924/01013 , H01L2924/0504 , H01L2924/0105 , H01L2924/0502 , H01L2924/0103 , H01L2924/0494 , H01L2924/0104 , H01L2924/0495 , H01L2924/01023 , H01L2924/0496 , H01L2924/01024 , H01L2924/05 , H01L2924/01028 , H01L2924/0543 , H01L2924/0544 , H01L2924/0542 , H01L2924/0534 , H01L2924/0535 , H01L2924/0536 , H01L2924/054 , H01L2924/0463 , H01L2924/0464 , H01L2924/0462 , H01L2924/0454 , H01L2924/0455 , H01L2924/0456 , H01L2924/046 , H01L2924/01105

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures. A bonding surface of at least one of the first conductive structures and the second conductive structures includes a frangible coating.

2.

发明申请
SYSTEMS AND METHODS FOR BONDING SEMICONDUCTOR ELEMENTS 有权

公开(公告)号：US20150097285A1

公开(公告)日：2015-04-09

申请号：US14505609

申请日：2014-10-03

Applicant: Kulicke and Soffa Industries, Inc.

Inventor： Robert N. Chylak , Dominick A. DeAngelis

IPC: H01L23/00

CPC classification number: H01L24/81 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/48 , H01L24/75 , H01L25/03 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/1134 , H01L2224/1145 , H01L2224/11462 , H01L2224/13082 , H01L2224/131 , H01L2224/13109 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13624 , H01L2224/16148 , H01L2224/16225 , H01L2224/16238 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/75251 , H01L2224/75252 , H01L2224/75301 , H01L2224/75343 , H01L2224/75348 , H01L2224/75349 , H01L2224/75744 , H01L2224/75745 , H01L2224/759 , H01L2224/8112 , H01L2224/81121 , H01L2224/81193 , H01L2224/81201 , H01L2224/81203 , H01L2224/81205 , H01L2224/81207 , H01L2224/81409 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/818 , H01L2224/81801 , H01L2224/81895 , H01L2224/81906 , H01L2225/06513 , H01L2225/1023 , H01L2225/1058 , H01L2924/01047 , H01L2924/01049 , H01L2924/01079 , H01L2924/01082 , H01L2924/15311 , H01L2924/181 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20301 , H01L2924/20302 , H01L2924/20303 , H01L2924/20304 , H01L2924/20305 , H01L2924/20306 , H01L2924/20307 , H01L2924/00014 , H01L2924/01029 , H01L2924/01014 , H01L2924/00012 , H01L2924/014 , H01L2224/8121 , H01L2924/00

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

3.

发明授权
Method to improve the reliability of thermosonic gold to aluminum wire bonds 失效
Title translation: 提高热金黄金对铝线接头的可靠性的方法

公开(公告)号：US06593222B2

公开(公告)日：2003-07-15

申请号：US09949112

申请日：2001-09-07

Applicant: Richard C. Smoak

Inventor： Richard C. Smoak

IPC: H01L2144

CPC classification number: H01L24/05 , H01L24/03 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/04042 , H01L2224/05073 , H01L2224/05093 , H01L2224/05096 , H01L2224/05124 , H01L2224/05166 , H01L2224/05187 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/45014 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48724 , H01L2224/48739 , H01L2224/8501 , H01L2224/85205 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01016 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/14 , H01L2924/20303 , H01L2924/20304 , H01L2924/20305 , H01L2924/20306 , H01L2924/30105 , H01L2924/04953 , H01L2224/78 , H01L2924/00 , H01L2224/48744 , H01L2924/00015

Abstract: A method for manufacturing an integrated circuit improves the reliability of thermosonic bonds formed to attach a gold bond wire to an aluminum interconnect pad by reducing corrosion of the aluminum pad regions. In the method, a gold or silver plating is applied to the aluminum bond pads to prevent corrosion of the aluminum pad surface. Prior to applying the plating, corrosive contaminants are removed from the aluminum pad regions using an argon sputter etch. Annealing is used to remove damage from the argon sputtering, and further serves to alloy the resultant aluminum to gold or aluminum to silver interface. The aluminum pad layer is made very thin, or less than approximately 8000 Å to limit Kirkendall voiding when gold wires are bonded to the pad using a thermosonic bonding process.

Abstract translation: 集成电路的制造方法提高了通过减少铝焊盘区域的腐蚀而形成的将金键连接到铝互连焊盘上的热声键的可靠性。在该方法中，将金或银电镀施加到铝接合焊盘以防止铝焊盘表面的腐蚀。在施加电镀之前，使用氩溅射蚀刻从铝焊盘区域去除腐蚀性污染物。使用退火来去除氩溅射中的损伤，并进一步用于将所得的铝与金或铝合金化成银界面。当使用热键粘合工艺将金线结合到垫上时，铝垫层被制成非常薄，或小于约8000以限制柯肯德尔空洞。

4.

发明授权
Ultrasonic bonding method and ultrasonic bonding apparatus 失效
Title translation: 超声波接合法和超声波接合装置

公开(公告)号：US5884835A

公开(公告)日：1999-03-23

申请号：US686538

申请日：1996-07-26

Applicant: Ryoichi Kajiwara , Toshiyuki Takahashi , Kazuya Takahashi , Masahiro Koizumi , Hiroshi Watanabe , Yukiharu Akiyama

Inventor： Ryoichi Kajiwara , Toshiyuki Takahashi , Kazuya Takahashi , Masahiro Koizumi , Hiroshi Watanabe , Yukiharu Akiyama

IPC: H01L21/607 , B23K20/00 , H01L21/60

CPC classification number: H01L24/85 , B23K20/007 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05624 , H01L2224/45015 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/78301 , H01L2224/85099 , H01L2224/85205 , H01L24/45 , H01L24/78 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/01079 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/20303 , H01L2924/20304 , H01L2924/20305 , H01L2924/20306 , H01L2924/20307 , H01L2924/20308 , H01L2924/20753

Abstract: In a case of ultrasonic bonding of a bonding wire to a metal pad provided on a semiconductor substrate, the vibration amplitude of a tip end of the bonding tool is set to be smaller than the film thickness of the metal pad, and the vibration frequency of the bonding tool is set to be higher than 70 kHz. According physical damage, such as cracks produced in a portion beneath the metal pad, can be prevented.

Abstract translation: 在将接合线超声波接合到设置在半导体基板上的金属焊盘的情况下，将接合工具的前端的振动振幅设定为小于金属焊盘的膜厚，振动频率接合工具设定为高于70kHz。可以防止物理损坏，例如在金属垫下面的部分产生的裂纹。

5.

发明授权
Systems and methods for bonding semiconductor elements 有权

公开(公告)号：US09905530B2

公开(公告)日：2018-02-27

申请号：US15449466

申请日：2017-03-03

Applicant: Kulicke and Soffa Industries, Inc.

Inventor： Robert N. Chylak , Dominick A. DeAngelis

IPC: H01L23/00 , H01L25/00 , H01L25/10 , H01L25/065

CPC classification number: H01L24/81 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/48 , H01L24/75 , H01L25/03 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/1134 , H01L2224/1145 , H01L2224/11462 , H01L2224/13082 , H01L2224/131 , H01L2224/13109 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13624 , H01L2224/16148 , H01L2224/16225 , H01L2224/16238 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/75251 , H01L2224/75252 , H01L2224/75301 , H01L2224/75343 , H01L2224/75348 , H01L2224/75349 , H01L2224/75744 , H01L2224/75745 , H01L2224/759 , H01L2224/8112 , H01L2224/81121 , H01L2224/81193 , H01L2224/81201 , H01L2224/81203 , H01L2224/81205 , H01L2224/81207 , H01L2224/81409 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/818 , H01L2224/81801 , H01L2224/81895 , H01L2224/81906 , H01L2225/06513 , H01L2225/1023 , H01L2225/1058 , H01L2924/01047 , H01L2924/01049 , H01L2924/01079 , H01L2924/01082 , H01L2924/15311 , H01L2924/181 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20301 , H01L2924/20302 , H01L2924/20303 , H01L2924/20304 , H01L2924/20305 , H01L2924/20306 , H01L2924/20307 , H01L2924/00014 , H01L2924/01029 , H01L2924/01014 , H01L2924/00012 , H01L2924/014 , H01L2224/8121 , H01L2924/00

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

6.

发明申请
SYSTEMS AND METHODS FOR BONDING SEMICONDUCTOR ELEMENTS 有权

公开(公告)号：US20160254252A1

公开(公告)日：2016-09-01

申请号：US15147015

申请日：2016-05-05

Applicant: Kulicke and Soffa Industries, Inc.

Inventor： Robert N. Chylak , Dominick A. DeAngelis

IPC: H01L25/065 , H01L23/00

CPC classification number: H01L24/81 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/48 , H01L24/75 , H01L25/03 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/1134 , H01L2224/1145 , H01L2224/11462 , H01L2224/13082 , H01L2224/131 , H01L2224/13109 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13624 , H01L2224/16148 , H01L2224/16225 , H01L2224/16238 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/75251 , H01L2224/75252 , H01L2224/75301 , H01L2224/75343 , H01L2224/75348 , H01L2224/75349 , H01L2224/75744 , H01L2224/75745 , H01L2224/759 , H01L2224/8112 , H01L2224/81121 , H01L2224/81193 , H01L2224/81201 , H01L2224/81203 , H01L2224/81205 , H01L2224/81207 , H01L2224/81409 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/818 , H01L2224/81801 , H01L2224/81895 , H01L2224/81906 , H01L2225/06513 , H01L2225/1023 , H01L2225/1058 , H01L2924/01047 , H01L2924/01049 , H01L2924/01079 , H01L2924/01082 , H01L2924/15311 , H01L2924/181 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20301 , H01L2924/20302 , H01L2924/20303 , H01L2924/20304 , H01L2924/20305 , H01L2924/20306 , H01L2924/20307 , H01L2924/00014 , H01L2924/01029 , H01L2924/01014 , H01L2924/00012 , H01L2924/014 , H01L2224/8121 , H01L2924/00

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

7.

发明申请
SEMICONDUCTOR DEVICE STRUCTURES AND METHODS FOR COPPER BOND PADS 审中-公开
Title translation: 铜焊盘的半导体器件结构和方法

公开(公告)号：US20140061910A1

公开(公告)日：2014-03-06

申请号：US13601746

申请日：2012-08-31

Applicant: CHU-CHUNG LEE , VIKAS R. SHETH

Inventor： CHU-CHUNG LEE , VIKAS R. SHETH

IPC: H01L21/768 , H01L23/49

CPC classification number: H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/02166 , H01L2224/04042 , H01L2224/05647 , H01L2224/45144 , H01L2224/45147 , H01L2224/48463 , H01L2224/48647 , H01L2224/48847 , H01L2224/85031 , H01L2224/85039 , H01L2224/85205 , H01L2224/85375 , H01L2924/12042 , H01L2924/20306 , H01L2924/00 , H01L2924/00014

Abstract: A method of making a semiconductor device can comprise forming a copper bond pad on an integrated circuit device; forming a first passivation layer on the integrated circuit device and the copper bond pad; forming a second passivation layer on the first passivation layer; forming a mask over the first and second passivation layers around the copper bond pad; etching the second passivation layer over the copper bond pad; and cleaning the first passivation layer over the copper bond pad. At least a portion of the first passivation layer remains over the copper bond pad after the etching the second passivation layer. A thickness of the first passivation layer over the copper bond pad is selected to protect the copper bond pad from oxidation and to allow wire bonding to the copper bond pad through the first passivation layer.

Abstract translation: 制造半导体器件的方法可以包括在集成电路器件上形成铜焊盘; 在集成电路器件和铜接合焊盘上形成第一钝化层; 在所述第一钝化层上形成第二钝化层; 在铜接合焊盘周围的第一钝化层和第二钝化层上形成掩模; 在铜焊盘上蚀刻第二钝化层; 以及在所述铜接合焊盘上清洁所述第一钝化层。在蚀刻第二钝化层之后，第一钝化层的至少一部分保留在铜接合焊盘上。选择铜接合焊盘上的第一钝化层的厚度以保护铜结合焊盘免于氧化，并允许通过第一钝化层引线键合至铜键合焊盘。

8.

发明申请
Room temperature gold wire bonding 审中-公开
Title translation: 室温金线接合

公开(公告)号：US20030006267A1

公开(公告)日：2003-01-09

申请号：US09882135

申请日：2001-06-14

Inventor： Kim H. Chen , Soojin Choi , Chun Yee Chan , Johnny Monis Nigos

IPC: B23K001/06 , B23K020/10 , B23K031/02

CPC classification number: H01L24/85 , B23K20/004 , H01L24/45 , H01L24/48 , H01L24/78 , H01L2224/05644 , H01L2224/45015 , H01L2224/45144 , H01L2224/48463 , H01L2224/48644 , H01L2224/78301 , H01L2224/85099 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/14 , H01L2924/20102 , H01L2924/20305 , H01L2924/20306 , H01L2924/00014 , H01L2924/00 , H01L2924/20753 , H01L2924/00015

Abstract: The present invention is a method for bonding gold wire to gold bond pads at temperatures lower than 125 degrees Celsius, and more particularly at room temperature, defined to be 25 degrees Celsius. By applying compressive force and ultrasonic energy, an intermetallic bond can be formed between a gold wire and a gold bond pad without elevating the temperature. Furthermore, the present invention uses ultrasonic energy with frequencies low enough to be in the range of commercially available wire bonders.

Abstract translation: 本发明是一种在低于125摄氏度，更特别是在室温下将金线接合到金键焊盘的方法，定义为25摄氏度。通过施加压力和超声能量，可以在金线和金键垫之间形成金属间键，而不升高温度。此外，本发明使用频率足够低的超声波能量在市售的焊线机的范围内。