公开(公告)号：US5884835A

公开(公告)日：1999-03-23

申请号：US686538

申请日：1996-07-26

申请人： Ryoichi Kajiwara ,  Toshiyuki Takahashi ,  Kazuya Takahashi ,  Masahiro Koizumi ,  Hiroshi Watanabe ,  Yukiharu Akiyama

发明人： Ryoichi Kajiwara ,  Toshiyuki Takahashi ,  Kazuya Takahashi ,  Masahiro Koizumi ,  Hiroshi Watanabe ,  Yukiharu Akiyama

IPC分类号： H01L21/607 ,  B23K20/00 ,  H01L21/60

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/78301 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/78 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20753

摘要： In a case of ultrasonic bonding of a bonding wire to a metal pad provided on a semiconductor substrate, the vibration amplitude of a tip end of the bonding tool is set to be smaller than the film thickness of the metal pad, and the vibration frequency of the bonding tool is set to be higher than 70 kHz. According physical damage, such as cracks produced in a portion beneath the metal pad, can be prevented.

摘要翻译： 在将接合线超声波接合到设置在半导体基板上的金属焊盘的情况下，将接合工具的前端的振动振幅设定为小于金属焊盘的膜厚，振动频率 接合工具设定为高于70kHz。 可以防止物理损坏，例如在金属垫下面的部分产生的裂纹。

公开(公告)号：US08207612B2

公开(公告)日：2012-06-26

申请号：US12682383

申请日：2008-09-19

申请人： Katsuyuki Torii ,  Arata Shiomi

发明人： Katsuyuki Torii ,  Arata Shiomi

IPC分类号： H01L23/48

CPC分类号： H01L29/7802 ,  H01L23/49562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L29/0696 ,  H01L29/41741 ,  H01L29/7397 ,  H01L29/7813 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/3754 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20752 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/00012

摘要： The present invention provides a semiconductor device and manufacturing method of the semiconductor device which can prevent breaks in an interlayer insulation film (12) and electrode (13) that arise with bonding while maintaining bonding strength. A semiconductor element (1) mounted on a semiconductor device including an interlayer insulation film (12) which has an aperture part (123) having an opening shape which is defined by an extension part (121) which covers the gate electrode (116) and extends in the first direction, a connection part (122), the extension part (121) and the connection part (122) which connects at fixed intervals in the first direction a pair of extension parts (121) which are adjacent to the second direction, and which exposes a main surface of a base region (112) and a main surface of an emitter region (113). Also, a second width dimension (122W) in the first direction below the connection part (122) is larger than a first width dimension (122W) in the second direction of the emitter region (113) below the extension part (121) of the interlayer insulation film (12).

摘要翻译： 本发明提供了半导体器件的半导体器件和制造方法，其可以防止在保持接合强度的同时通过接合产生的层间绝缘膜（12）和电极（13）的断裂。 一种半导体元件（1），其安装在包括层间绝缘膜（12）的半导体器件（12）上，所述层间绝缘膜具有开口形状，所述开口部分由覆盖所述栅极电极（116）的延伸部分（121） 在第一方向上延伸的连接部分（122），延伸部分（121）和连接部分（122），其在第一方向上以固定间隔连接一对延伸部分（121），其邻近第二方向 并且暴露出基极区域（112）和发射极区域（113）的主表面的主表面。 此外，在连接部分（122）下方的第一方向上的第二宽度尺寸（122W）大于第一宽度尺寸（122W），在第一宽度尺寸（122W）的第二宽度方向上的发射极区域（113）的第二方向 层间绝缘膜（12）。

公开(公告)号：US20040142551A1

公开(公告)日：2004-07-22

申请号：US10408119

申请日：2003-04-08

申请人： Hitachi, Ltd.

发明人： Yasuyuki Nakajima ,  Toshiaki Morita ,  Tomoo Matsuzawa ,  Seiichi Tomoi ,  Naoki Watanabe

IPC分类号： H01L021/44

CPC分类号： H01L24/05 ,  H01L23/53223 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/49175 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/05042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20106 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20752 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/00012

摘要： Provided is a semiconductor device comprising a first metal film formed above a semiconductor chip, a ball portion formed over said first metal film and made of a second metal, and an alloy layer of said first metal and said second metal which alloy layer is formed between said first metal film and said ball portion, wherein said alloy layer reaches the bottom of said first metal film, and said ball portion is covered with a resin; and a manufacturing method thereof. The present invention makes it possible to improve adhesion between the bonding pad portion and ball portion of a bonding wire over an interconnect, thereby improving the reliability of the semiconductor device.

摘要翻译： 提供一种半导体器件，包括形成在半导体芯片上的第一金属膜，形成在所述第一金属膜上并由第二金属制成的球形部分，以及所述第一金属和所述第二金属的合金层， 所述第一金属膜和所述球部分，其中所述合金层到达所述第一金属膜的底部，并且所述球部分被树脂覆盖; 及其制造方法。 本发明使得可以提高接合焊盘部分和接合线的球形部分之间的互连上的粘附性，从而提高半导体器件的可靠性。

公开(公告)号：US20100264546A1

公开(公告)日：2010-10-21

申请号：US12682383

申请日：2008-09-19

申请人： Katsuyuki Torii ,  Arata Shiomi

发明人： Katsuyuki Torii ,  Arata Shiomi

IPC分类号： H01L23/49 ,  H01L21/60

CPC分类号： H01L29/7802 ,  H01L23/49562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L29/0696 ,  H01L29/41741 ,  H01L29/7397 ,  H01L29/7813 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/3754 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20752 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/00012

摘要： The present invention provides a semiconductor device and manufacturing method of the semiconductor device which can prevent breaks in an interlayer insulation film (12) and electrode (13) that arise with bonding while maintaining bonding strength. A semiconductor element (1) mounted on a semiconductor device including an interlayer insulation film (12) which has an aperture part (123) having an opening shape which is defined by an extension part (121) which covers the gate electrode (116) and extends in the first direction, a connection part (122), the extension part (121) and the connection part (122) which connects at fixed intervals in the first direction a pair of extension parts (121) which are adjacent to the second direction, and which exposes a main surface of a base region (112) and a main surface of an emitter region (113). Also, a second width dimension (122W) in the first direction below the connection part (122) is larger than a first width dimension (122W) in the second direction of the emitter region (113) below the extension part (121) of the interlayer insulation film (12).

摘要翻译： 本发明提供了半导体器件的半导体器件和制造方法，其可以防止在保持接合强度的同时通过接合产生的层间绝缘膜（12）和电极（13）的断裂。 一种半导体元件（1），其安装在包括层间绝缘膜（12）的半导体器件（12）上，所述层间绝缘膜具有开口形状，所述开口部分由覆盖所述栅极电极（116）的延伸部分（121） 在第一方向上延伸的连接部分（122），延伸部分（121）和连接部分（122），其在第一方向上以固定间隔连接一对延伸部分（121），其邻近第二方向 并且暴露出基极区域（112）和发射极区域（113）的主表面的主表面。 此外，在连接部分（122）下方的第一方向上的第二宽度尺寸（122W）大于第一宽度尺寸（122W），在第一宽度尺寸（122W）的第二宽度方向上的发射极区域（113）的第二方向 层间绝缘膜（12）。

公开(公告)号：US06902101B2

公开(公告)日：2005-06-07

申请号：US10294614

申请日：2002-11-15

申请人： Satoshi Horie ,  Takahiro Yonezawa ,  Hiroyuki Kiyomura ,  Tetsuya Tokunaga ,  Tatsuo Sasaoka

发明人： Satoshi Horie ,  Takahiro Yonezawa ,  Hiroyuki Kiyomura ,  Tetsuya Tokunaga ,  Tatsuo Sasaoka

IPC分类号： B23K20/00 ,  H01L21/60 ,  H01L21/607 ,  B23K31/00 ,  B23K31/02 ,  B23K37/00

CPC分类号： B23K20/007 ,  H01L24/11 ,  H01L24/12 ,  H01L24/45 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85205 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20309 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/20752

摘要： In a bump bonding technique for forming a bump on an IC, including forming a ball at the tip of a gold wire protruding from a capillary, and providing a metal-to-metal joint by applying ultrasonic vibration from a ultrasonic head through the capillary while pressing the ball against a pad portion on the IC, the metal-to-metal joint is provided by applying the ultrasonic vibration at a frequency in a range of 130 to 320 kHz, more preferably in a range of 170 to 270 kHz, and most preferably at a frequency of 230±10 kHz at room temperatures and atmospheric pressure. Consequently, a bump is formed on an IC having a low heat resistance temperature in a satisfactory joint condition, and a bump is formed with good positional accuracy without giving the influence of heat to the surroundings.

摘要翻译： 在用于在IC上形成凸块的凸块接合技术中，包括在从毛细管突出的金线的尖端处形成球，并且通过从超声波头通过毛细管施加超声波振动来提供金属对金属接头，同时 将球压在IC上的焊盘部分上，通过以130至320kHz的范围内，更优选在170至270kHz的范围内施加超声波振动来提供金属对金属接头，并且大多数 优选在室温和大气压下以230±10kHz的频率进行。 因此，在良好的接合状态下，在具有低耐热温度的IC上形成凸块，并且在没有给周围环境造成热的影响的情况下形成具有良好位置精度的凸块。

公开(公告)号：US20030094481A1

公开(公告)日：2003-05-22

申请号：US10294614

申请日：2002-11-15

申请人： Matsushita Electric Industrial Co., Ltd.

发明人： Satoshi Horie ,  Takahiro Yonezawa ,  Hiroyuki Kiyomura ,  Tetsuya Tokunaga ,  Tatsuo Sasaoka

IPC分类号： B23K037/00 ,  B23K031/00 ,  B23K031/02

CPC分类号： B23K20/007 ,  H01L24/11 ,  H01L24/12 ,  H01L24/45 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85205 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20309 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/20752

摘要： In a bump bonding technique for forming a bump on an IC, including forming a ball at the tip of a gold wire protruding from a capillary, and providing a metal-to-metal joint by applying ultrasonic vibration from a ultrasonic head through the capillary while pressing the ball against a pad portion on the IC, the metal-to-metal joint is provided by applying the ultrasonic vibration at a frequency in a range of 130 to 320 kHz, more preferably in a range of 170 to 270 kHz, and most preferably at a frequency of 230null10 kHz at room temperatures and atmospheric pressure. Consequently, a bump is formed on an IC having a low heat resistance temperature in a satisfactory joint condition, and a bump is formed with good positional accuracy without giving the influence of heat to the surroundings.

摘要翻译： 在用于在IC上形成凸块的凸块接合技术中，包括在从毛细管突出的金线的尖端处形成球，并且通过从超声波头通过毛细管施加超声波振动来提供金属对金属接头，同时 将球压在IC上的焊盘部分上，通过以130至320kHz的范围内，更优选在170至270kHz的范围内施加超声波振动来提供金属对金属接头，并且大多数 优选在室温和大气压下以230±10kHz的频率进行。 因此，在良好的接合状态下，在具有低耐热温度的IC上形成凸块，并且在没有给周围环境造成热的影响的情况下形成具有良好位置精度的凸块。

公开(公告)号：US08767351B1

公开(公告)日：2014-07-01

申请号：US13755175

申请日：2013-01-31

申请人： Seagate Technology LLC

发明人： Leping Li ,  Saravuth Keo ,  Kara L. Maytag ,  Pramit P. Parikh ,  Jeff R. O'Konski ,  Mark A. Herendeen ,  Joel W. Hoehn ,  Roger L. Hipwell ,  Joe J. Schobel ,  John L. Ibele ,  Ralph Marquart ,  Edward Knutson

IPC分类号： G11B5/48

CPC分类号： G11B5/102 ,  G11B5/3169 ,  G11B5/3173 ,  G11B5/4826 ,  G11B2005/0021 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48644 ,  H01L2224/85012 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2924/12042 ,  H01L2924/20751 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20309 ,  H01L2924/20752 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： The presently disclosed technology describes systems and methods for attaining a ball bond using less than 1 thousandth of an inch diameter gold wire using ultrasonic bonding energy and without heating an underlying bonding pad. The ball bond allows the use of particularly small bonding pads that are particularly close to adjacent microelectronic structures that limit the use of other bonding techniques that have shallow take-off angles.

摘要翻译： 目前公开的技术描述了使用超过千分之一英寸直径的金线使用超声波接合能量并且不加热下面的焊盘来获得球接合的系统和方法。 球接合允许使用特别接近相邻微电子结构的特别小的接合焊盘，其限制了具有浅起飞角的其它接合技术的使用。

公开(公告)号：US07015127B2

公开(公告)日：2006-03-21

申请号：US10408119

申请日：2003-04-08

申请人： Yasuyuki Nakajima ,  Toshiaki Morita ,  Tomoo Matsuzawa ,  Seiichi Tomoi ,  Naoki Kawanabe

发明人： Yasuyuki Nakajima ,  Toshiaki Morita ,  Tomoo Matsuzawa ,  Seiichi Tomoi ,  Naoki Kawanabe

IPC分类号： H01L21/44

CPC分类号： H01L24/05 ,  H01L23/53223 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/49175 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/05042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20106 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20752 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/00012

摘要： Provided is a semiconductor device comprising a first metal film formed above a semiconductor chip, a ball portion formed over said first metal film and made of a second metal, and an alloy layer of said first metal and said second metal which alloy layer is formed between said first metal film and said ball portion, wherein said alloy layer reaches the bottom of said first metal film, and said ball portion is covered with a resin; and a manufacturing method thereof. The present invention makes it possible to improve adhesion between the bonding pad portion and ball portion of a bonding wire over an interconnect, thereby improving the reliability of the semiconductor device.

公开(公告)号：US06620720B1

公开(公告)日：2003-09-16

申请号：US09546037

申请日：2000-04-10

申请人： Ralph Salvatore Moyer ,  Vivian Wanda Ryan

发明人： Ralph Salvatore Moyer ,  Vivian Wanda Ryan

IPC分类号： H01L2144

CPC分类号： H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/0347 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05655 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/4554 ,  H01L2224/45572 ,  H01L2224/45573 ,  H01L2224/45655 ,  H01L2224/45666 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48655 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48755 ,  H01L2924/0001 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/20302 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2224/45644 ,  H01L2924/01004 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/01006

摘要： The specification describes a process for forming a barrier layer on copper metallization in semiconductor integrated circuits. The barrier layer is effective for both wire bond and solder bump interconnections. The barrier layer is Ti/Ni formed on the copper. Aluminum bond pads are formed on the barrier layer for wire bond interconnections and copper bond pads are formed on the barrier layer for solder bump interconnections.

摘要翻译： 该说明书描述了在半导体集成电路中在铜金属化上形成阻挡层的工艺。 阻挡层对于引线键合和焊料凸块互连都是有效的。 阻挡层是在铜上形成的Ti / Ni。 铝焊盘形成在阻焊层上用于引线接合互连，并且在阻焊层上形成铜焊盘用于焊料凸块互连。

公开(公告)号：US20030168740A1

公开(公告)日：2003-09-11

申请号：US10369766

申请日：2003-02-21

发明人： Yasuyuki Nakajima ,  Toshiaki Morita ,  Tomoo Matsuzawa ,  Seiichi Tomoi ,  Naoki Kawanabe

IPC分类号： H01L023/48 ,  H01L023/52 ,  H01L029/40

CPC分类号： H01L24/05 ,  H01L23/53223 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/49175 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/05042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20106 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20752 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/00012

摘要： Provided is a semiconductor device comprising a first metal film formed above a semiconductor chip, a ball portion formed over said first metal film and made of a second metal, and an alloy layer of said first metal and said second metal which alloy layer is formed between said first metal film and said ball portion, wherein said alloy layer reaches the bottom of said first metal film, and said ball portion is covered with a resin; and a manufacturing method thereof. The present invention makes it possible to improve adhesion between the bonding pad portion and ball portion of a bonding wire over an interconnect, thereby improving the reliability of the semiconductor device.

摘要翻译： 提供一种半导体器件，包括形成在半导体芯片上的第一金属膜，形成在所述第一金属膜上并由第二金属制成的球形部分，以及所述第一金属和所述第二金属的合金层， 所述第一金属膜和所述球部分，其中所述合金层到达所述第一金属膜的底部，并且所述球部分被树脂覆盖; 及其制造方法。 本发明使得可以提高接合焊盘部分和接合线的球形部分之间的互连上的粘附性，从而提高半导体器件的可靠性。