公开(公告)号：US20130220406A1

公开(公告)日：2013-08-29

申请号：US13406087

申请日：2012-02-27

Applicant: Stephen DAY ,  James Andrew Robert DIMMOCK ,  Matthias KAUER

Inventor： Stephen DAY ,  James Andrew Robert DIMMOCK ,  Matthias KAUER

IPC: H01L31/0352 ,  H01L31/18 ,  B82Y99/00

CPC classification number: H01L31/035281 ,  B82Y30/00 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

Abstract: A non-close-packed vertical junction photovoltaic device includes a substrate, a two-dimensional array of elongate nanostructures extending substantially perpendicularly from a surface of the substrate, and a thin film solar cell disposed over the nanostructures such that the thin film solar cell substantially conforms to the topography of the nanostructures. An average separation of nearest neighbor solar cell coated nanostructures is greater than zero and less than a vacuum wavelength of light corresponding to a band gap of absorption. The thin film solar cell may include an active region that conforms to the elongate nanostructures, a first electrode that conforms to a surface of the active region, and a second electrode. A separation of opposing outer surfaces of the first electrode extending along adjacent elongate nanostructures is greater than zero and less than the vacuum wavelength of the light corresponding to the band gap of the active region.

Abstract translation: 非紧密堆积的垂直结光伏器件包括衬底，从衬底的表面基本上垂直延伸的细长纳米结构的二维阵列，以及设置在纳米结构上的薄膜太阳能电池，使得薄膜太阳能电池基本上 符合纳米结构的形貌。 最近相邻的太阳能电池涂覆的纳米结构的平均分离大于零并且小于对应于吸收带隙的光的真空波长。 薄膜太阳能电池可以包括符合细长纳米结构的有源区，符合有源区的表面的第一电极和第二电极。 沿着相邻的细长纳米结构延伸的第一电极的相对的外表面的分离大于零并且小于对应于有源区的带隙的光的真空波长。

公开(公告)号：US20070108452A1

公开(公告)日：2007-05-17

申请号：US11558972

申请日：2006-11-13

Applicant: Matthias KAUER

Inventor： Matthias KAUER

IPC: H01L33/00

CPC classification number: H01L33/0095 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02664 ,  H01L33/105 ,  H01L33/145 ,  H01L33/305 ,  H01L33/465 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/2226 ,  H01S5/32341

Abstract: A method of growing a semiconductor layer structure comprises growing a first semiconductor layer and incorporating hydrogen into the first semiconductor layer. One or more further semiconductor layers are then grown over the first semiconductor layer to form a semiconductor layer structure. A selected portion of the first semiconductor layer is then annealed so as to change the electrical resistance of the selected portion of the first semiconductor layer. The electrical resistance of the one or more further semiconductor layers that have been grown over the first semiconductor layer is not significantly changed by the annealing step. The invention may be used, for example, to create a current aperture in a semiconductor layer within a semiconductor layer structure.

Abstract translation: 生长半导体层结构的方法包括生长第一半导体层并将氢掺入第一半导体层。 然后在第一半导体层上生长一个或多个其它半导体层以形成半导体层结构。 然后对第一半导体层的选定部分进行退火，以改变第一半导体层的选定部分的电阻。 通过退火步骤，已经在第一半导体层上生长的一个或多个其它半导体层的电阻没有显着变化。 本发明可以用于例如在半导体层结构内的半导体层中形成电流孔。