公开(公告)号：US10403492B1

公开(公告)日：2019-09-03

申请号：US16216006

申请日：2018-12-11

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu ,  Haochen Li ,  Ting Xie ,  Qi Zhang

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/285

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, organic radicals (e.g., methyl CH3 radicals) can be generated by exciting and/or dissociating hydrogen and/or inert gas (e.g., Ar, He, etc) molecules in a remote plasma source and a subsequent reaction with organic molecule (alkanes and alkenes). The organic radicals (e.g., methyl CH3 radicals) can be exposed to the silicon and/or silicon germanium surfaces. After exposure to the organic radicals, the silicon and/or silicon germanium surfaces can be stable in air for a time period (e.g., days) with reduced surface oxidation such that the silicon and/or silicon germanium surfaces can be effectively protected from oxidation. As such, native surface oxide removal process before subsequent process steps can be eliminated.

公开(公告)号：US10964528B2

公开(公告)日：2021-03-30

申请号：US16522193

申请日：2019-07-25

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu ,  Haochen Li ,  Ting Xie ,  Qi Zhang

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/67

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, organic radicals (e.g., methyl CH3 radicals) can be generated by exciting and/or dissociating hydrogen and/or inert gas (e.g., Ar, He, etc) molecules in a remote plasma source and a subsequent reaction with organic molecule (alkanes and alkenes). The organic radicals (e.g., methyl CH3 radicals) can be exposed to the silicon and/or silicon germanium surfaces. After exposure to the organic radicals, the silicon and/or silicon germanium surfaces can be stable in air for a time period (e.g., days) with reduced surface oxidation such that the silicon and/or silicon germanium surfaces can be effectively protected from oxidation. As such, native surface oxide removal process before subsequent process steps can be eliminated.

公开(公告)号：US20210082724A1

公开(公告)日：2021-03-18

申请号：US17024851

申请日：2020-09-18

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Ting Xie ,  Hua Chung ,  Haochen Li ,  Xinliang Lu ,  Shawming Ma ,  Haichun Yang ,  Michael X. Yang

IPC: H01L21/67 ,  H01L21/30 ,  H01L21/321 ,  H01L21/223

Abstract: Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.

公开(公告)号：US11791181B2

公开(公告)日：2023-10-17

申请号：US17024851

申请日：2020-09-18

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Ting Xie ,  Hua Chung ,  Haochen Li ,  Xinliang Lu ,  Shawming Ma ,  Haichun Yang ,  Michael X. Yang

IPC: H01L21/67 ,  H01L21/223 ,  H01L21/321 ,  H01L21/30

CPC classification number: H01L21/67213 ,  H01L21/2236 ,  H01L21/3003 ,  H01L21/321

Abstract: Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.

公开(公告)号：US20200185216A1

公开(公告)日：2020-06-11

申请号：US16522193

申请日：2019-07-25

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu ,  Haochen Li ,  Ting Xie ,  Qi Zhang

IPC: H01L21/02 ,  H01L21/285 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3213

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, organic radicals (e.g., methyl CH3 radicals) can be generated by exciting and/or dissociating hydrogen and/or inert gas (e.g., Ar, He, etc) molecules in a remote plasma source and a subsequent reaction with organic molecule (alkanes and alkenes). The organic radicals (e.g., methyl CH3 radicals) can be exposed to the silicon and/or silicon germanium surfaces. After exposure to the organic radicals, the silicon and/or silicon germanium surfaces can be stable in air for a time period (e.g., days) with reduced surface oxidation such that the silicon and/or silicon germanium surfaces can be effectively protected from oxidation. As such, native surface oxide removal process before subsequent process steps can be eliminated.

公开(公告)号：US20210343506A1

公开(公告)日：2021-11-04

申请号：US17245803

申请日：2021-04-30

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Haochen Li ,  Shuang Meng ,  Qiqun Zhang ,  Dave Kohl ,  Shawming Ma ,  Haichun Yang ,  Hua Chung ,  Ryan M. Pakulski ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: Apparatus and methods for processing a workpiece using a plasma are provided. In one example implementation, an apparatus can include a processing chamber. The apparatus can include a plasma chamber comprising a dielectric tube defining a sidewall. The apparatus can include an inductively coupled plasma source. The inductively coupled plasma source can include an RF generator configured to energize an induction coil disposed about the dielectric tube. The apparatus can include a separation grid separating the processing chamber from the plasma chamber. The apparatus can include a controller configured to operate the inductively coupled plasma source in a pulsed mode. During the pulsed mode the RF generator is configured to apply a plurality of pulses of RF power to the induction coil. A frequency of pulses can be in a range of about 1 kHz to about 100 kHz.