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公开(公告)号:US12174616B2
公开(公告)日:2024-12-24
申请号:US18313655
申请日:2023-05-08
Inventor: Michael X. Yang , Markus Lieberer , Joseph Cibere
IPC: G05B19/4155 , H01L21/67
Abstract: A control system operable to train a control tuner to generate temperature setpoint tracking improvements for a thermal processing system is provided. In one example implementation, temperature setpoint tracking improvements are achieved by generating system controller parameter adjustments based on a difference between a simulated workpiece temperature estimate and an actual workpiece temperature estimate. For example, a system model can generate a simulated workpiece temperature estimate simulating an actual workpiece temperature estimate, and based on the difference between the simulated and actual workpiece temperature estimates, generate clone controller parameter adjustments. The clone controller parameter adjustments can be used to generate system controller parameter adjustments, which can improve temperature setpoint tracking for the thermal processing system.
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公开(公告)号:US20170194133A1
公开(公告)日:2017-07-06
申请号:US15380221
申请日:2016-12-15
Applicant: Mattson Technology, Inc.
Inventor: Markus Lieberer , Christian Seifert , Rolf Bremensdorfer
IPC: H01J61/073 , H01L21/268 , H05H1/48 , H05B3/00 , H05B3/03 , H01L21/67 , H01J61/52
CPC classification number: H01J61/0732 , H01J61/28 , H01J61/526 , H01L21/268 , H01L21/67115 , H01L21/6719 , H05B3/0047 , H05B3/03 , H05H1/48 , H05H2001/488
Abstract: Electrode tips for arc lamps for use in, for instance, a millisecond anneal system are provided. In one example implementation, an electrode for an arc lamp can have an electrode tip. The surface of the electrode tip can have one or more grooves to reduce the transportation of molten material across the surface of the electrode tip. The electrode can include an interface between the electrode tip and a heat sink. The interface can have a shape designed to have a desired lateral temperature distribution across the surface of the electrode tip.
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公开(公告)号:US20250093852A1
公开(公告)日:2025-03-20
申请号:US18959024
申请日:2024-11-25
Inventor: Michael X. Yang , Markus Lieberer , Joseph Cibere
IPC: G05B19/4155 , H01L21/67
Abstract: A control system operable to train a control tuner to generate temperature setpoint tracking improvements for a thermal processing system is provided. In one example implementation, temperature setpoint tracking improvements are achieved by generating system controller parameter adjustments based on a difference between a simulated workpiece temperature estimate and an actual workpiece temperature estimate. For example, a system model can generate a simulated workpiece temperature estimate simulating an actual workpiece temperature estimate, and based on the difference between the simulated and actual workpiece temperature estimates, generate clone controller parameter adjustments. The clone controller parameter adjustments can be used to generate system controller parameter adjustments, which can improve temperature setpoint tracking for the thermal processing system.
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公开(公告)号:US12027427B2
公开(公告)日:2024-07-02
申请号:US16936468
申请日:2020-07-23
Inventor: Markus Lieberer , Christian Pfahler , Markus Hagedorn , Michael vanAbbema , Alexandr Cosceev
IPC: H01L21/67 , H01L21/324 , H01L21/66 , H01L21/687
CPC classification number: H01L22/20 , H01L21/324 , H01L21/67115 , H01L21/6719 , H01L21/67248 , H01L21/68757
Abstract: Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; and applying a preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate. In one example implementation, a preheat process can include obtaining one or more temperature measurements from a temperature sensor having a field of view of a wafer support plate in a millisecond anneal system; and applying a pulsed preheat recipe to heat the wafer support plate in the millisecond anneal system based at least in part on the one or more temperature measurements.
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公开(公告)号:US20230230887A1
公开(公告)日:2023-07-20
申请号:US18185970
申请日:2023-03-17
Inventor: Michael Storek , Rolf Bremensdorfer , Markus Lieberer , Michael Yang
CPC classification number: H01L22/12 , G01J5/042 , H01L22/34 , H01L21/67115
Abstract: A thermal processing system for performing thermal processing can include a workpiece support plate configured to support a workpiece and heat source(s) configured to heat the workpiece. The thermal processing system can include window(s) having transparent region(s) that are transparent to electromagnetic radiation within a measurement wavelength range and opaque region(s) that are opaque to electromagnetic radiation within a portion of the measurement wavelength range. A temperature measurement system can include a plurality of infrared emitters configured to emit infrared radiation and a plurality of infrared sensors configured to measure infrared radiation within the measurement wavelength range where the transparent region(s) are at least partially within a field of view the infrared sensors. A controller can be configured to perform operations including obtaining transmittance and reflectance measurements associated with the workpiece and determining, based on the measurements, a temperature of the workpiece less than about 600° C.
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公开(公告)号:US20200350217A1
公开(公告)日:2020-11-05
申请号:US16936468
申请日:2020-07-23
Inventor: Markus Lieberer , Christian Pfahler , Markus Hagedorn , Michael vanAbbema , Alexandr Cosceev
IPC: H01L21/66 , H01L21/67 , H01L21/324 , H01L21/687
Abstract: Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; and applying a preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate. In one example implementation, a preheat process can include obtaining one or more temperature measurements from a temperature sensor having a field of view of a wafer support plate in a millisecond anneal system; and applying a pulsed preheat recipe to heat the wafer support plate in the millisecond anneal system based at least in part on the one or more temperature measurements.
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公开(公告)号:US20240304502A1
公开(公告)日:2024-09-12
申请号:US18667611
申请日:2024-05-17
Inventor: Markus Lieberer , Christian Pfahler , Markus Hagedorn , Michael vanAbbema , Alexandr Cosceev
IPC: H01L21/66 , H01L21/324 , H01L21/67 , H01L21/687
CPC classification number: H01L22/20 , H01L21/324 , H01L21/67115 , H01L21/6719 , H01L21/67248 , H01L21/68757
Abstract: Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; and applying a preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate. In one example implementation, a preheat process can include obtaining one or more temperature measurements from a temperature sensor having a field of view of a wafer support plate in a millisecond anneal system; and applying a pulsed preheat recipe to heat the wafer support plate in the millisecond anneal system based at least in part on the one or more temperature measurements.
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公开(公告)号:US11610824B2
公开(公告)日:2023-03-21
申请号:US17183992
申请日:2021-02-24
Inventor: Michael Storek , Rolf Bremensdorfer , Markus Lieberer , Michael Yang
Abstract: A thermal processing system for performing thermal processing can include a workpiece support plate configured to support a workpiece and heat source(s) configured to heat the workpiece. The thermal processing system can include window(s) having transparent region(s) that are transparent to electromagnetic radiation within a measurement wavelength range and opaque region(s) that are opaque to electromagnetic radiation within a portion of the measurement wavelength range. A temperature measurement system can include a plurality of infrared emitters configured to emit infrared radiation and a plurality of infrared sensors configured to measure infrared radiation within the measurement wavelength range where the transparent region(s) are at least partially within a field of view the infrared sensors. A controller can be configured to perform operations including obtaining transmittance and reflectance measurements associated with the workpiece and determining, based on the measurements, a temperature of the workpiece less than about 600° C.
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公开(公告)号:US20210132592A1
公开(公告)日:2021-05-06
申请号:US17084228
申请日:2020-10-29
Inventor: Michael X. Yang , Markus Lieberer , Joseph Cibere
IPC: G05B19/4155 , H01L21/67
Abstract: A control system operable to train a control tuner to generate temperature setpoint tracking improvements for a thermal processing system is provided. In one example implementation, temperature setpoint tracking improvements are achieved by generating system controller parameter adjustments based on a difference between a simulated workpiece temperature estimate and an actual workpiece temperature estimate. For example, a system model can generate a simulated workpiece temperature estimate simulating an actual workpiece temperature estimate, and based on the difference between the simulated and actual workpiece temperature estimates, generate clone controller parameter adjustments. The clone controller parameter adjustments can be used to generate system controller parameter adjustments, which can improve temperature setpoint tracking for the thermal processing system.
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公开(公告)号:US10727140B2
公开(公告)日:2020-07-28
申请号:US15377121
申请日:2016-12-13
Inventor: Markus Lieberer , Christian Pfahler , Markus Hagedorn , Michael vanAbbema , Alexandr Cosceev
IPC: H01L21/66 , H01L21/67 , H01L21/324 , H01L21/687
Abstract: Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; and applying a preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate. In one example implementation, a preheat process can include obtaining one or more temperature measurements from a temperature sensor having a field of view of a wafer support plate in a millisecond anneal system; and applying a pulsed preheat recipe to heat the wafer support plate in the millisecond anneal system based at least in part on the one or more temperature measurements.
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