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1.发明申请Apparatus and Method for Providing Resist Alignment Marks in a Double Patterning Lithographic Process 审中-公开在双重图案化平版印刷工艺中提供抗蚀剂对准标记的装置和方法公开(公告)号：US20130017378A1
公开(公告)日：2013-01-17
申请号：US13617616
申请日：2012-09-14
申请人： Maya Angelova Doytcheva , Mircea Dusa , Richard Johannes Franciscus Van Haren , Harry Sewell , Robertus Wilhelmus Van Der Heijden
发明人： Maya Angelova Doytcheva , Mircea Dusa , Richard Johannes Franciscus Van Haren , Harry Sewell , Robertus Wilhelmus Van Der Heijden
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/40 , G03F7/70466 , G03F9/7065 , G03F9/708 , G03F9/7084 , Y10T428/24802 , Y10T428/24851
摘要： A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.
摘要翻译： 描述了在双重图案化工艺期间对准衬底的方法。 在基板上形成包含至少一个对准标记的第一抗蚀剂层。 在第一抗蚀剂层显影之后，在第一抗蚀剂层上沉积第二抗蚀剂层，留下平坦的顶表面（即，没有形貌）。 通过适当地烘烤第二抗蚀剂层，在第二抗蚀剂层中形成与第一抗蚀剂层中的对准标记几乎没有或没有偏移误差的对称对准标记。 可以通过适当调整第一和第二抗蚀剂层的相应厚度，涂覆工艺参数和烘焙工艺参数来增强形成在第二抗蚀剂中的对准标记的对称性。
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2.发明授权Apparatus and method for providing resist alignment marks in a double patterning lithographic process 失效在双重图案化光刻工艺中提供抗蚀剂对准标记的装置和方法公开(公告)号：US08329366B2
公开(公告)日：2012-12-11
申请号：US12768128
申请日：2010-04-27
申请人： Maya Angelova Doytcheva , Mircea Dusa , Richard Johannes Franciscus Van Haren , Harry Sewell , Robertus Wilhelmus Van Der Heijden
发明人： Maya Angelova Doytcheva , Mircea Dusa , Richard Johannes Franciscus Van Haren , Harry Sewell , Robertus Wilhelmus Van Der Heijden
IPC分类号： G03F9/00
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/40 , G03F7/70466 , G03F9/7065 , G03F9/708 , G03F9/7084 , Y10T428/24802 , Y10T428/24851
摘要： A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.
摘要翻译： 描述了在双重图案化工艺期间对准衬底的方法。 在基板上形成包含至少一个对准标记的第一抗蚀剂层。 在第一抗蚀剂层显影之后，在第一抗蚀剂层上沉积第二抗蚀剂层，留下平坦的顶表面（即，没有形貌）。 通过适当地烘烤第二抗蚀剂层，在第二抗蚀剂层中形成与第一抗蚀剂层中的对准标记几乎没有或没有偏移误差的对称对准标记。 可以通过适当调整第一和第二抗蚀剂层的相应厚度，涂覆工艺参数和烘焙工艺参数来增强形成在第二抗蚀剂中的对准标记的对称性。
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公开(公告)号：US20100301458A1
公开(公告)日：2010-12-02
申请号：US12725026
申请日：2010-03-16
申请人： Harry Sewell , Mircea Dusa , Richard Johannes Franciscus Van Haren , Manfred Gawein Tenner , Maya Angelova Doytcheva
发明人： Harry Sewell , Mircea Dusa , Richard Johannes Franciscus Van Haren , Manfred Gawein Tenner , Maya Angelova Doytcheva
IPC分类号： H01L23/544 , H01L21/027 , G03B27/42
CPC分类号： G03F9/7046 , G03F7/0035 , G03F7/105 , G03F7/70466 , G03F9/7076 , H01L21/0273 , H01L21/32139
摘要： A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The day may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).
摘要翻译： 提供光刻制造半导体器件的系统和方法以及涉及具有添加到第一或第二光刻图案上的染料的光刻双重图案化工艺的制品。 该染料用于检测第一光刻图案的位置，并将第二光刻图案直接对准。 这一天可以是在指定波长或给定波长带处的荧光，发光，吸收或反射。 波长可对应于对准光束的波长。 染料允许检测第一光刻图案，即使当其涂覆有辐射敏感层（例如抗蚀剂）时。
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公开(公告)号：US08625096B2
公开(公告)日：2014-01-07
申请号：US12730906
申请日：2010-03-24
申请人： Harry Sewell , Mircea Dusa , Richard Johannes Franciscus Van Haren , Manfred Gawein Tenner , Maya Angelova Doytcheva
发明人： Harry Sewell , Mircea Dusa , Richard Johannes Franciscus Van Haren , Manfred Gawein Tenner , Maya Angelova Doytcheva
CPC分类号： G03F9/7084 , G03F9/7076 , G03F9/708
摘要： A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.
摘要翻译： 使用双重图案化工艺来对准半导体晶片。 沉积具有第一光学特性的第一抗蚀层，并形成至少一个对准标记。 开发出第一抗蚀剂层。 具有第二光学特性的第二抗蚀剂层沉积在第一抗蚀剂层上。 第一和第二抗蚀剂层和对准标记的组合具有使得入射到对准标记上的预定波长的辐射产生作为第一和第二光学特性的函数的第一或更高阶衍射。
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5.发明授权Improving alignment target contrast in a lithographic double patterning process 失效改善光刻双重图案化过程中的对准目标对比度公开(公告)号：US08709908B2
公开(公告)日：2014-04-29
申请号：US12725026
申请日：2010-03-16
申请人： Harry Sewell , Mircea Dusa , Richard Johannes Franciscus Van Haren , Manfred Gawein Tenner , Maya Angelova Doytcheva
发明人： Harry Sewell , Mircea Dusa , Richard Johannes Franciscus Van Haren , Manfred Gawein Tenner , Maya Angelova Doytcheva
IPC分类号： H01L21/76
CPC分类号： G03F9/7046 , G03F7/0035 , G03F7/105 , G03F7/70466 , G03F9/7076 , H01L21/0273 , H01L21/32139
摘要： A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).
摘要翻译： 提供光刻制造半导体器件的系统和方法以及涉及具有添加到第一或第二光刻图案上的染料的光刻双重图案化工艺的制品。 该染料用于检测第一光刻图案的位置，并将第二光刻图案直接对准。 染料可以是在指定波长或给定波长带处的荧光，发光，吸收或反射。 波长可对应于对准光束的波长。 染料允许检测第一光刻图案，即使当其涂覆有辐射敏感层（例如抗蚀剂）时。
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公开(公告)号：US20110075238A1
公开(公告)日：2011-03-31
申请号：US12730906
申请日：2010-03-24
申请人： Harry SEWELL , Mircea Dusa , Richard Johannes Franciscus Van Haren , Manfred Gawein Tenner , Maya Angelova Doytcheva
发明人： Harry SEWELL , Mircea Dusa , Richard Johannes Franciscus Van Haren , Manfred Gawein Tenner , Maya Angelova Doytcheva
CPC分类号： G03F9/7084 , G03F9/7076 , G03F9/708
摘要： A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.
摘要翻译： 使用双重图案化工艺来对准半导体晶片。 沉积具有第一光学特性的第一抗蚀层，并形成至少一个对准标记。 开发出第一抗蚀剂层。 具有第二光学特性的第二抗蚀剂层沉积在第一抗蚀剂层上。 第一和第二抗蚀剂层和对准标记的组合具有使得入射到对准标记上的预定波长的辐射产生作为第一和第二光学特性的函数的第一或更高阶衍射。
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公开(公告)号：US20130070226A1
公开(公告)日：2013-03-21
申请号：US13678343
申请日：2012-11-15
申请人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
发明人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
CPC分类号： G03F9/7065 , G03F7/20 , G03F9/7076 , G03F9/708 , G03F9/7084 , Y10T428/24909
摘要： The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.
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公开(公告)号：US08319967B2
公开(公告)日：2012-11-27
申请号：US12328167
申请日：2008-12-04
申请人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
发明人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
CPC分类号： G03F9/7065 , G03F7/20 , G03F9/7076 , G03F9/708 , G03F9/7084 , Y10T428/24909
摘要： The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.
摘要翻译： 本发明涉及一种用于基板的光学取向并在其上提供的标记结构。 标记结构具有第一水平的第一反射表面和第二水平的第二反射表面。 第一级和第二级之间的间隔确定相位深度条件。 标记结构还具有另外的结构。 布置该附加结构以在标记结构的制造期间改变分离。 本发明还涉及形成这种标记结构的方法。
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公开(公告)号：US20090147232A1
公开(公告)日：2009-06-11
申请号：US12328167
申请日：2008-12-04
申请人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
发明人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
CPC分类号： G03F9/7065 , G03F7/20 , G03F9/7076 , G03F9/708 , G03F9/7084 , Y10T428/24909
摘要： The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.
摘要翻译： 本发明涉及一种用于基板的光学取向并在其上提供的标记结构。 标记结构具有第一水平的第一反射表面和第二水平的第二反射表面。 第一级和第二级之间的间隔确定相位深度条件。 标记结构还具有另外的结构。 布置该附加结构以在标记结构的制造期间改变分离。 本发明还涉及形成这种标记结构的方法。
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公开(公告)号：US06600260B2
公开(公告)日：2003-07-29
申请号：US10131945
申请日：2002-04-25
IPC分类号： C09K1100
CPC分类号： C09K11/7773 , C09K11/7772 , H01J61/44
摘要： A gas discharge lamp fitted with a gas discharge vessel filled with a gas filling is suitable for a gas discharge which emits VUV radiation, with a luminophore coating containing a down conversion luminophore and with means for igniting and maintaining a gas discharge in which the down conversion luminophore has in a host lattice a pair of activators of the a first lanthanoid ion and a second lanthanoid ion and a sensitizer selected from the group of the copper (I) ion, silver (I) ion, gold (I) ion, zinc (II) ion, gallium (III) ion, indium (III) ion, thallium (III) ion, germanium (IV) ion, tin (IV) ion and lead (IV) ion, is environmentally friendly and has a high lamp efficiency &eegr;lamp. The invention also concerns a down conversion luminophore which in a host lattice has a pair of activators of a first lanthanoid ion and a second lanthanoid ion and a sensitizer selected from the group of the copper (I) ion, silver (I) ion, gold (I) ion, zinc (II) ion, gallium (III) ion, indium (III) ion, thallium (III) ion, germanium (IV) ion, tin (IV) ion and lead (IV) ion.
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