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公开(公告)号：US20130070226A1
公开(公告)日：2013-03-21
申请号：US13678343
申请日：2012-11-15
申请人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
发明人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
CPC分类号： G03F9/7065 , G03F7/20 , G03F9/7076 , G03F9/708 , G03F9/7084 , Y10T428/24909
摘要： The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.
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公开(公告)号：US08319967B2
公开(公告)日：2012-11-27
申请号：US12328167
申请日：2008-12-04
申请人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
发明人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
CPC分类号： G03F9/7065 , G03F7/20 , G03F9/7076 , G03F9/708 , G03F9/7084 , Y10T428/24909
摘要： The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.
摘要翻译： 本发明涉及一种用于基板的光学取向并在其上提供的标记结构。 标记结构具有第一水平的第一反射表面和第二水平的第二反射表面。 第一级和第二级之间的间隔确定相位深度条件。 标记结构还具有另外的结构。 布置该附加结构以在标记结构的制造期间改变分离。 本发明还涉及形成这种标记结构的方法。
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公开(公告)号：US20090147232A1
公开(公告)日：2009-06-11
申请号：US12328167
申请日：2008-12-04
申请人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
发明人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
CPC分类号： G03F9/7065 , G03F7/20 , G03F9/7076 , G03F9/708 , G03F9/7084 , Y10T428/24909
摘要： The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.
摘要翻译： 本发明涉及一种用于基板的光学取向并在其上提供的标记结构。 标记结构具有第一水平的第一反射表面和第二水平的第二反射表面。 第一级和第二级之间的间隔确定相位深度条件。 标记结构还具有另外的结构。 布置该附加结构以在标记结构的制造期间改变分离。 本发明还涉及形成这种标记结构的方法。
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公开(公告)号：US08203692B2
公开(公告)日：2012-06-19
申请号：US12482770
申请日：2009-06-11
CPC分类号： G03B27/54 , G03F9/7076 , H01L23/544 , H01L2223/54466 , H01L2924/0002 , H01L2924/00
摘要： An alignment mark on a substrate includes a periodic structure of a plurality of first elements and a plurality of second elements. The elements are arranged in an alternating repetitive sequence in a first direction. An overall pitch of the periodic structure is equal to a sum of a width of the first element and a width of the second element in the first direction. Each first element has a first periodic sub-structure with a first sub-pitch and each second element has a second periodic sub-structure with second sub-pitch. An optical property of the first element for interaction with a beam of radiation having a wavelength λ is different from the optical property of the second element. The overall pitch is larger than the wavelength λ, and each of the first and the second sub-pitch is smaller than the wavelength.
摘要翻译： 衬底上的对准标记包括多个第一元件和多个第二元件的周期性结构。 元件沿第一方向以交替的重复序列排列。 周期性结构的整体间距等于第一元件的宽度和第二元件在第一方向上的宽度之和。 每个第一元件具有具有第一子间距的第一周期性子结构，并且每个第二元件具有具有第二子间距的第二周期性子结构。 用于与具有波长λ的辐射束相互作用的第一元件的光学性质不同于第二元件的光学性质。 总间距大于波长λ，第一和第二子间距都小于波长。
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公开(公告)号：US08072615B2
公开(公告)日：2011-12-06
申请号：US12332953
申请日：2008-12-11
CPC分类号： G03F9/7076
摘要： The position of a product is measured using an alignment mark on the product. Radiation is transmitted towards the alignment mark and diffracted by a pattern in the alignment mark. Position information is determined from phase relations of the diffracted radiation. The alignment mark comprises a set of mutually parallel conductor tracks from which the diffracted radiation is collected, the pattern being defined by a pattern of variation of the pitch between successive tracks as a function of position along the surface of the product. Thus, for example the pattern comprises alternating first and second areas wherein the pitch has a first and second value, respectively. Because the tracks in the different parts of the pattern, such as the first and second areas, are parallel to each other improved measurements are possible.
摘要翻译： 使用产品上的对准标记测量产品的位置。 辐射被朝向对准标记传送并被对准标记中的图案衍射。 位置信息由衍射辐射的相位关系确定。 对准标记包括一组相互平行的导体轨道，衍射辐射从该轨迹收集起来，该图案是通过沿着产品表面的位置的函数的连续迹线之间的间距的变化模式来限定的。 因此，例如，图案包括交替的第一和第二区域，其中间距分别具有第一和第二值。 因为图案的不同部分中的轨迹（例如第一和第二区域）彼此平行，所以改进的测量是可能的。
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公开(公告)号：US20090310113A1
公开(公告)日：2009-12-17
申请号：US12482770
申请日：2009-06-11
IPC分类号： G03B27/54 , H01L23/544
CPC分类号： G03B27/54 , G03F9/7076 , H01L23/544 , H01L2223/54466 , H01L2924/0002 , H01L2924/00
摘要： An alignment mark on a substrate includes a periodic structure of a plurality of first elements and a plurality of second elements. The elements are arranged in an alternating repetitive sequence in a first direction. An overall pitch of the periodic structure is equal to a sum of a width of the first element and a width of the second element in the first direction. Each first element has a first periodic sub-structure with a first sub-pitch and each second element has a second periodic sub-structure with second sub-pitch. An optical property of the first element for interaction with a beam of radiation having a wavelength λ is different from the optical property of the second element. The overall pitch is larger than the wavelength λ, and each of the first and the second sub-pitch is smaller than the wavelength.
摘要翻译： 衬底上的对准标记包括多个第一元件和多个第二元件的周期性结构。 元件沿第一方向以交替的重复序列排列。 周期性结构的整体间距等于第一元件的宽度和第二元件在第一方向上的宽度之和。 每个第一元件具有具有第一子间距的第一周期性子结构，并且每个第二元件具有具有第二子间距的第二周期性子结构。 用于与具有波长λ的辐射束相互作用的第一元件的光学性质不同于第二元件的光学性质。 总间距大于波长λ，第一和第二子间距都小于波长。
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公开(公告)号：US20090153861A1
公开(公告)日：2009-06-18
申请号：US12332953
申请日：2008-12-11
IPC分类号： G01B11/00
CPC分类号： G03F9/7076
摘要： The position of a product is measured using an alignment mark on the product. Radiation is transmitted towards the alignment mark and diffracted by a pattern in the alignment mark. Position information is determined from phase relations of the diffracted radiation. The alignment mark comprises a set of mutually parallel conductor tracks from which the diffracted radiation is collected, the pattern being defined by a pattern of variation of the pitch between successive tracks as a function of position along the surface of the product. Thus, for example the pattern comprises alternating first and second areas wherein the pitch has a first and second value, respectively. Because the tracks in the different parts of the pattern, such as the first and second areas, are parallel to each other improved measurements are possible.
摘要翻译： 使用产品上的对准标记测量产品的位置。 辐射被朝向对准标记传送并被对准标记中的图案衍射。 位置信息由衍射辐射的相位关系确定。 对准标记包括一组相互平行的导体轨道，衍射辐射从该轨迹收集起来，该图案是通过沿着产品表面的位置的函数的连续迹线之间的间距的变化模式来限定的。 因此，例如，图案包括交替的第一和第二区域，其中间距分别具有第一和第二值。 因为图案的不同部分中的轨迹（例如第一和第二区域）彼此平行，所以改进的测量是可能的。
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8.发明授权Marker for alignment of non-transparent gate layer, method for manufacturing such a marker, and use of such a marker in a lithographic apparatus 失效用于非透明栅极层对准的标记，用于制造这种标记的方法，以及在光刻设备中使用这种标记公开(公告)号：US07271073B2
公开(公告)日：2007-09-18
申请号：US10879707
申请日：2004-06-30
CPC分类号： H01L23/544 , G03F9/7076 , G03F9/708 , G03F9/7084 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A method for manufacturing a marker structure including line elements and trench elements arranged in a repetitive order includes filling the trench elements with silicon dioxide and leveling the marker structure. A sacrificial oxide layer is grown on the semiconductor surface, and a first subset of the line elements is exposed to an ion implantation beam including a dopant species to dope and change an etching rate of the first subset. The substrate is annealed to activate the dopant species, and the semiconductor surface is etched to remove the sacrificial oxide layer and to level the first subset to a first level and to create a topology such that the first subset has a first level differing from a second level of a surface portion of the marker structure different from the first subset.
摘要翻译： 用于制造包括以重复排列的线元件和沟槽元件的标记结构的方法包括用二氧化硅填充沟槽元件并调平标记结构。 在半导体表面上生长牺牲氧化物层，并且将线元件的第一子集暴露于包括掺杂剂物质的离子注入束以掺杂并改变第一子集的蚀刻速率。 将衬底退火以激活掺杂剂物质，并且蚀刻半导体表面以去除牺牲氧化物层，并将第一子集级别化为第一级并且创建拓扑，使得第一子集具有与第二子集不同的第一级 不同于第一子集的标记结构的表面部分的水平。
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9.发明授权Marker for alignment of non-transparent gate layer, method for manufacturing such a marker, and use of such a marker in a lithographic apparatus 失效用于非透明栅极层对准的标记，用于制造这种标记的方法，以及在光刻设备中使用这种标记公开(公告)号：US07453161B2
公开(公告)日：2008-11-18
申请号：US11889517
申请日：2007-08-14
IPC分类号： H01L23/544
CPC分类号： H01L23/544 , G03F9/7076 , G03F9/708 , G03F9/7084 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A method for manufacturing a marker structure including line elements and trench elements arranged in a repetitive order includes filling the trench elements with silicon dioxide and leveling the marker structure. A sacrificial oxide layer is grown on the semiconductor surface, and a first subset of the line elements is exposed to an ion implantation beam including a dopant species to dope and change an etching rate of the first subset. The substrate is annealed to activate the dopant species, and the semiconductor surface is etched to remove the sacrificial oxide layer and to level the first subset to a first level and to create a topology such that the first subset has a first level differing from a second level of a surface portion of the marker structure different from the first subset.
摘要翻译： 用于制造包括以重复排列的线元件和沟槽元件的标记结构的方法包括用二氧化硅填充沟槽元件并调平标记结构。 在半导体表面上生长牺牲氧化物层，并且将线元件的第一子集暴露于包括掺杂剂物质的离子注入束以掺杂并改变第一子集的蚀刻速率。 将衬底退火以激活掺杂剂物质，并且蚀刻半导体表面以去除牺牲氧化物层，并将第一子集级别化为第一级并且创建拓扑，使得第一子集具有与第二子集不同的第一级 不同于第一子集的标记结构的表面部分的水平。
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公开(公告)号：US08243259B2
公开(公告)日：2012-08-14
申请号：US12486458
申请日：2009-06-17
CPC分类号： G03B27/52 , G03F7/70341 , G03F7/707 , G03F7/7085
摘要： A substrate stage for an immersion type lithographic apparatus is arranged to project a patterned radiation beam from a patterning device onto a substrate, the substrate stage being constructed to hold the substrate and including at least a sensor for sensing the patterned radiation beam, the sensor including an at least partially transmissive layer having a front side facing the incoming radiation beam and a back side opposite the front side, wherein the back side is provided with at least a sensor mark to be subjected to the radiation beam transmitted through the layer.
摘要翻译： 用于浸入式光刻设备的衬底台被布置成将来自图案形成装置的图案化辐射束投影到衬底上，衬底台被构造成保持衬底并且至少包括用于感测图案化辐射束的传感器，传感器包括 至少部分透射层，其具有面向所述入射辐射束的前侧和与所述前侧相对的后侧，其中，所述后侧设置有至少一个传感器标记，所述传感器标记经受穿过所述层的辐射束。
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