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公开(公告)号：US20240332266A1
公开(公告)日：2024-10-03
申请号：US18405195
申请日：2024-01-05
申请人： MEDIATEK INC.
发明人： Che-Hung KUO , Ta-Jen YU , Chi-Hung HUANG
IPC分类号： H01L25/10 , H01L25/065
CPC分类号： H01L25/105 , H01L25/0657 , H01L2225/0651 , H01L2225/06562 , H01L2225/06586 , H01L2225/1035 , H01L2225/1058
摘要： A semiconductor device is provided. The semiconductor device includes a bottom package and a top package. The top package is mounted on the bottom package. At least one portion of the top package protrudes from a sidewall of the bottom package. The semiconductor device further includes a passive device mounted on a protruding region of the portion of the top package.
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公开(公告)号：US20230260977A1
公开(公告)日：2023-08-17
申请号：US17962185
申请日：2022-10-07
申请人： MediaTek Inc.
IPC分类号： H01L25/16 , H01L23/00 , H01L23/48 , H01L23/498 , H01L49/02
CPC分类号： H01L25/162 , H01L24/08 , H01L24/16 , H01L24/32 , H01L25/165 , H01L24/73 , H01L24/80 , H01L23/481 , H01L23/49816 , H01L23/49838 , H01L28/75 , H01L28/90 , H01L2924/1434 , H01L2924/1431 , H01L2924/19041 , H01L2924/19011 , H01L2224/16235 , H01L2224/32225 , H01L2224/73204 , H01L2224/08235 , H01L2224/08265 , H01L2224/80895 , H01L2224/80896
摘要： Various embodiments of a 3DIC die package, including trench capacitors integrated with IC dies, are disclosed. A 3DIC die package includes a first IC die and a second IC die disposed on the first IC die. The first IC die includes a substrate having a first surface and a second surface opposite to the first surface, a first active device disposed on the first surface of the substrate, and a passive device disposed on the second surface of the substrate. The passive device includes a plurality of trenches disposed in the substrate and through the second surface of the substrate, first and second conductive layers disposed in the plurality of trenches and on the second surface of the substrate, and a first dielectric layer disposed between the first and second conductive layers. The second IC die includes a second active device.
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