公开(公告)号：US08399048B2

公开(公告)日：2013-03-19

申请号：US12195295

申请日：2008-08-20

申请人： Mi Hee Jeong ,  Hyo Young Lee

发明人： Mi Hee Jeong ,  Hyo Young Lee

IPC分类号： B05D5/12 ,  B05D3/02 ,  B05D3/12

CPC分类号： G03F7/0002 ,  B01J23/007 ,  B01J23/80 ,  B01J37/0215 ,  B01J37/03 ,  B82Y10/00 ,  B82Y40/00

摘要： Provided is a method of patterning a catalyst using nano imprint lithography. The method includes slurrying a catalyst, preparing a stamp for forming a catalyst pattern, forming the catalyst pattern by coating a substrate with the catalyst slurry, imprinting the stamp on the catalyst slurry and performing patterning simultaneously with calcination through nano imprint lithography, and drying the patterned catalyst. As the catalyst pattern is formed through the nano imprint lithography, a surface area of the catalyst increases and it is easy to pattern the catalyst according to the shape of the stamp.

摘要翻译： 提供了使用纳米压印光刻图案化催化剂的方法。 该方法包括使催化剂浆化，制备用于形成催化剂图案的印模，通过用催化剂浆料涂布基材形成催化剂图案，将印模印在催化剂浆料上，并通过纳米压印光刻法同时进行煅烧，并干燥 图案化催化剂。 当通过纳米压印光刻法形成催化剂图案时，催化剂的表面积增加，并且容易根据印模的形状图案化催化剂。

公开(公告)号：US07811934B2

公开(公告)日：2010-10-12

申请号：US12045769

申请日：2008-03-11

申请人： Mi Hee Jeong ,  Hyo Young Lee ,  Nak Jin Choi ,  Kang Ho Park

发明人： Mi Hee Jeong ,  Hyo Young Lee ,  Nak Jin Choi ,  Kang Ho Park

IPC分类号： H01L21/033 ,  H01L21/311

CPC分类号： H01L21/31144 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0331 ,  H01L51/0022 ,  Y10S977/889

摘要： Provided are a method of manufacturing nanoelectrode lines. The method includes the steps of: sequentially forming an insulating layer, a first photoresist layer, and a drop-shaped second photoresist on a substrate; disposing an imprint mold having a plurality of molding patterns over the second photoresist; applying pressure to the mold to allow the second photoresist to flow into the mold patterns; irradiating ultraviolet (UV) light onto the mold to cure the second photoresist; removing the mold from the cured second photoresist and patterning the second photoresist; patterning the first photoresist layer using the patterned second photoresist as a mask; patterning the insulating layer; and forming a metal layer between the patterned insulating layers. In this method, metal electrode lines are formed between insulating layers using an imprint lithography process, so that nanoelectronic devices can be freed from crosstalk between the metal electrode lines.

摘要翻译： 提供一种制造纳米电极线的方法。 该方法包括以下步骤：在衬底上依次形成绝缘层，第一光致抗蚀剂层和滴形第二光致抗蚀剂; 在所述第二光致抗蚀剂上设置具有多个模制图案的压印模具; 向模具施加压力以允许第二光致抗蚀剂流入模具图案; 将UV（UV）光照射到模具上以固化第二光致抗蚀剂; 从固化的第二光致抗蚀剂移除模具并图案化第二光致抗蚀剂; 使用图案化的第二光致抗蚀剂作为掩模来图案化第一光致抗蚀剂层; 图案化绝缘层; 以及在图案化的绝缘层之间形成金属层。 在该方法中，使用压印光刻工艺在绝缘层之间形成金属电极线，使得纳米电子器件可以免除金属电极线之间的串扰。

公开(公告)号：US20090023288A1

公开(公告)日：2009-01-22

申请号：US12045769

申请日：2008-03-11

申请人： Mi Hee Jeong ,  Hyo Young Lee ,  Nak Jin Choi ,  Kang Ho Park

发明人： Mi Hee Jeong ,  Hyo Young Lee ,  Nak Jin Choi ,  Kang Ho Park

IPC分类号： H01L21/768

CPC分类号： H01L21/31144 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0331 ,  H01L51/0022 ,  Y10S977/889

摘要： Provided are a method of manufacturing nanoelectrode lines. The method includes the steps of: sequentially forming an insulating layer, a first photoresist layer, and a drop-shaped second photoresist on a substrate; disposing an imprint mold having a plurality of molding patterns over the second photoresist; applying pressure to the mold to allow the second photoresist to flow into the mold patterns; irradiating ultraviolet (UV) light onto the mold to cure the second photoresist; removing the mold from the cured second photoresist and patterning the second photoresist; patterning the first photoresist layer using the patterned second photoresist as a mask; patterning the insulating layer; and forming a metal layer between the patterned insulating layers. In this method, metal electrode lines are formed between insulating layers using an imprint lithography process, so that nanoelectronic devices can be freed from crosstalk between the metal electrode lines.

摘要翻译： 提供一种制造纳米电极线的方法。 该方法包括以下步骤：在衬底上依次形成绝缘层，第一光致抗蚀剂层和滴形第二光致抗蚀剂; 在所述第二光致抗蚀剂上设置具有多个模制图案的压印模具; 向模具施加压力以允许第二光致抗蚀剂流入模具图案; 将UV（UV）光照射到模具上以固化第二光致抗蚀剂; 从固化的第二光致抗蚀剂移除模具并图案化第二光致抗蚀剂; 使用图案化的第二光致抗蚀剂作为掩模来图案化第一光致抗蚀剂层; 图案化绝缘层; 以及在图案化的绝缘层之间形成金属层。 在该方法中，使用压印光刻工艺在绝缘层之间形成金属电极线，使得纳米电子器件可以免除金属电极线之间的串扰。