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    Down-converted light source with uniform wavelength emission
    5.
    发明授权
    Down-converted light source with uniform wavelength emission 有权
    具有均匀波长发射的下变频光源

    公开(公告)号：US08338838B2

    公开(公告)日：2012-12-25

    申请号：US12810052

    申请日：2008-12-09

    申请人： Xiaoguang Sun ,  Michael A. Haase ,  Thomas J. Miller ,  Terry L. Smith ,  Tommie W. Kelley ,  Catherine A. Leatherdale

    发明人： Xiaoguang Sun ,  Michael A. Haase ,  Thomas J. Miller ,  Terry L. Smith ,  Tommie W. Kelley ,  Catherine A. Leatherdale

    IPC分类号： H01L33/00

    CPC分类号： H01L27/156 ,  H01L33/0079 ,  H01L33/505

    摘要： An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.

    摘要翻译： 光源的布置附着到半导体波长转换器。 每个光源以相应的峰值波长发光，并且光源的布置的特征在于峰值波长的第一范围。 半导体波长转换器的特征在于通过光源的排列泵浦时的第二峰值波长范围。 峰值波长的第二范围比峰值波长的第一范围窄。 半导体波长转换器的特征在于具有比光源的最长峰值波长长的波长的吸收边。 波长转换器还可以用于减小来自扩展光源的输出中的波长变化。

    Cadmium-free Re-Emitting Semiconductor Construction
    6.
    发明申请
    Cadmium-free Re-Emitting Semiconductor Construction 失效
    无镉重发半导体结构

    公开(公告)号：US20120097921A1

    公开(公告)日：2012-04-26

    申请号：US13379858

    申请日：2010-06-25

    申请人： Terry L. Smith ,  Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

    发明人： Terry L. Smith ,  Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

    IPC分类号： H01L33/04

    CPC分类号： H01L33/08 ,  H01L33/26 ,  H01L33/502

    摘要： Disclosed re-emitting semiconductor constructions (RSCs) may provide full-color RGB or white-light emitting devices that are free of cadmium. Some embodiments may include a potential well that comprises a III-V semiconductor and that converts light of a first photon energy to light of a smaller photon energy, and a window that comprises a II-VI semiconductor having a band gap energy greater than the first photon energy. Some embodiments may include a potential well that converts light having a first photon energy to light having a smaller photon energy and that comprises a II-VI semiconductor that is substantially Cd-free. Some embodiments may include a potential well that comprises a first III-V semiconductor and that converts light having a first photon energy to light having a smaller photon energy, and a window that comprises a second III-V semiconductor and that has a band gap energy greater than the first photon energy.

    摘要翻译： 公开的再发射半导体结构（RSC）可以提供不含镉的全色RGB或白光发射器件。 一些实施例可以包括包含III-V半导体并且将第一光子能量的光转换成较小光子能量的光的势阱，以及包括具有大于第一光子能级的带隙能量的II-VI半导体的窗口 光子能量。 一些实施例可以包括将具有第一光子能量的光转换成具有较小光子能量的光并且包括基本上不含Cd的II-VI半导体的势阱。 一些实施例可以包括包括第一III-V半导体并且将具有第一光子能量的光转换成具有较小光子能量的光的势阱，以及包括第二III-V半导体并且具有带隙能量 大于第一光子能量。

    RE-EMITTING SEMICONDUCTOR CARRIER DEVICES FOR USE WITH LEDS AND METHODS OF MANUFACTURE
    9.
    发明申请
    RE-EMITTING SEMICONDUCTOR CARRIER DEVICES FOR USE WITH LEDS AND METHODS OF MANUFACTURE 有权
    重新发射用于LED的半导体载体装置及其制造方法

    公开(公告)号：US20120097983A1

    公开(公告)日：2012-04-26

    申请号：US13264487

    申请日：2010-05-03

    申请人： Terry L. Smith ,  Catherine A. Leatherdale ,  Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun ,  Zhaohui Yang ,  Todd A. Ballen ,  Amy S. Barnes

    发明人： Terry L. Smith ,  Catherine A. Leatherdale ,  Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun ,  Zhaohui Yang ,  Todd A. Ballen ,  Amy S. Barnes

    IPC分类号： H01L33/60 ,  H01L33/48

    CPC分类号： H01L31/055 ,  H01L33/0079 ,  H01L33/502 ,  H01L2224/48463 ,  H01L2933/0041 ,  H05B33/10 ,  Y02E10/52

    摘要： Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength λ1 to visible light at a second wavelength λ2, the active region including at least a first potential well. The attaching step is carried out such that the stack is disposed between the substrate and the carrier window, which is transparent to the second wavelength λ2. The carrier window may also have a lateral dimension greater than that of the stack. The removal step is carried out so as to provide an RSC carrier device that includes the carrier window and the stack.

    摘要翻译： 公开了与LED一起使用的重新发射半导体结构（RSCs）以及相关的器件，系统和方法。 一种制造方法包括提供半导体衬底，在衬底的第一侧上形成半导体层堆叠，将载体窗口附接到堆叠，以及在附接步骤之后移除衬底。 所述堆叠包括适于将第一波长λ1的光转换成第二波长λ2的可见光的有源区，所述有源区至少包括第一势阱。 执行安装步骤使得堆叠被布置在对第二波长λ2透明的基板和载体窗口之间。 载体窗口也可以具有大于堆叠的横向尺寸的横向尺寸。 执行去除步骤以提供包括载体窗口和堆叠的RSC载体装置。