EXHAUST SYSTEM FOR A VEHICLE
    3.
    发明申请
    EXHAUST SYSTEM FOR A VEHICLE 审中-公开
    汽车排气系统

    公开(公告)号:US20150361842A1

    公开(公告)日:2015-12-17

    申请号:US14301707

    申请日:2014-06-11

    IPC分类号: F01N3/035 F01N3/20

    摘要: An exhaust system for a vehicle includes a passageway, a selective catalytic reduction system, a diesel particulate filter, a urea injection system, and a hydrolysis catalyst. The passageway is operable to direct a flow of exhaust gas emitted from an engine of the vehicle. The selective catalytic reduction system and the diesel particulate filter are positioned along the passageway spaced from one another. The urea injection system includes an injection port positioned along the passageway upstream of the selective catalytic reduction system. The urea injection system is operable to inject urea into the passageway. The hydrolysis catalyst coats at least a portion of the diesel particulate filter. Urea injected into the passageway through the injection port decomposes into ammonia and carbon dioxide upon contact with the hydrolysis catalyst. Thus, the decomposition of the urea is not dependent on mixing the urea with the exhaust gases.

    摘要翻译: 用于车辆的排气系统包括通道,选择性催化还原系统,柴油微粒过滤器,尿素喷射系统和水解催化剂。 通道可操作以引导从车辆的发动机排出的废气流。 选择性催化还原系统和柴油颗粒过滤器沿着彼此间隔开的通道定位。 尿素喷射系统包括沿着选择性催化还原系统上游的通道定位的注射口。 尿素注射系统可操作以将尿素注入通道。 水解催化剂涂覆至少一部分柴油颗粒过滤器。 通过注入口注入通道的尿素在与水解催化剂接触时分解成氨和二氧化碳。 因此,尿素的分解不依赖于将尿素与废气混合。

    Semiconductor device containing a semiconducting crystalline nanoporous
material
    4.
    发明授权
    Semiconductor device containing a semiconducting crystalline nanoporous material 失效
    含有半导体结晶纳米多孔材料的半导体器件

    公开(公告)号:US5594263A

    公开(公告)日:1997-01-14

    申请号:US468892

    申请日:1995-06-06

    摘要: This invention relates to a semiconductor device comprising at least one p-n junction. The junction is formed from a "p" semiconductor contacting an "n" semiconductor. Said device characterized in that at least one of said "p" or "n" semiconductor is a nanoporous crystalline semiconducting material. These nanoporous materials have an intracrystalline nanopore system whose pores are crystallographically regular and have an average pore diameter of about 2.5 to about 30 .ANG.. Additionally, they have a band gap of greater than 0 to about 5 eV which band gap can be modified by removing a portion of the templating agent from the pore system of the materials. The materials which have these properties include, metal polychalcogenide compounds, metal sulfides and selenides, metal oxides, and metal oxysulfides. These materials can be used in a large variety of semiconducting devices such as light emitting diodes, bipolar transistors, etc. A process for preparing these nanoporous materials is also presented.

    摘要翻译: 本发明涉及包括至少一个p-n结的半导体器件。 接点由接触“n”半导体的“p”半导体形成。 所述器件的特征在于,所述“p”或“n”半导体中的至少一个是纳米多孔结晶半导体材料。 这些纳米多孔材料具有晶体内纳米孔系统,其孔隙是晶体学上规则的,平均孔径约为2.5至约30埃。 此外,它们具有大于0至约5eV的带隙,通过从材料的孔系统中除去一部分模板剂可以改变该带隙。 具有这些性质的材料包括金属多金属化合物,金属硫化物和硒化物,金属氧化物和金属氧硫化物。 这些材料可以用于各种各样的半导体器件,例如发光二极管,双极晶体管等。还提出了制备这些纳米多孔材料的方法。