公开(公告)号：US5872380A

公开(公告)日：1999-02-16

申请号：US517189

申请日：1995-08-21

申请人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valerity B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

发明人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valerity B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

IPC分类号： G06F17/50 ,  G11C5/02 ,  G11C5/06 ,  H01L23/522 ,  H01L23/528 ,  H01L27/02 ,  H01L27/092 ,  H01L27/108 ,  H01L27/11 ,  H01L27/118 ,  H01L29/06 ,  H03K19/0944 ,  H03K19/0948 ,  H01L27/10

CPC分类号： G06F17/5072 ,  G06F17/5077 ,  G11C5/025 ,  G11C5/063 ,  H01L23/5222 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/0922 ,  H01L27/108 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/11807 ,  H03K19/09441 ,  H03K19/0948 ,  H01L29/0657 ,  H01L2924/0002

摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arrangement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.

摘要翻译： 披露了几个发明。 公开了一种使用六角形电池的电池结构。 该体系结构不限于六角形细胞。 单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。 公开了多向非正交三层金属布线。 该架构可以与三向路由组合以用于特别有利的设计。 在三向布线布置中，用于互连集成电路的微电子单元的端子的电导体优选地在彼此成角度地移位60度的三个方向上延伸。 沿三个方向延伸的导体优选地以三个不同的层形成。 公开了一种使半导体器件中的导线长度最小化的方法。 公开了一种使半导体器件中的金属间电容最小化的方法。 公开了一种称为“三元器件”的新型器件。 公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。 公开了三角形运算放大器和三极管。 公开了三角形读出放大器。 公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。 公开了一种可编程可变驱动晶体管。 公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

公开(公告)号：US5742086A

公开(公告)日：1998-04-21

申请号：US517153

申请日：1995-08-21

申请人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriy B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

发明人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriy B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

IPC分类号： G06F17/50 ,  G11C5/02 ,  G11C5/06 ,  H01L23/522 ,  H01L23/528 ,  H01L27/02 ,  H01L27/092 ,  H01L27/108 ,  H01L27/11 ,  H01L27/118 ,  H01L29/06 ,  H03K19/0944 ,  H03K19/0948 ,  H01L29/78 ,  H01L29/41

CPC分类号： G06F17/5072 ,  G06F17/5077 ,  G11C5/025 ,  G11C5/063 ,  H01L23/5222 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/0922 ,  H01L27/108 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/11807 ,  H03K19/09441 ,  H03K19/0948 ,  H01L29/0657 ,  H01L2924/0002

摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arraingement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.

摘要翻译： 披露了几个发明。 公开了一种使用六角形电池的电池结构。 该体系结构不限于六角形细胞。 单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。 公开了多向非正交三层金属布线。 该架构可以与三向路由组合以用于特别有利的设计。 在三向布线布置中，集成电路的微电子单元的互连端的电导体优选地在三个方向上相互延伸60°。 沿三个方向延伸的导体优选地以三个不同的层形成。 公开了一种使半导体器件中的导线长度最小化的方法。 公开了一种使半导体器件中的金属间电容最小化的方法。 公开了一种称为“三元器件”的新型器件。 公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。 公开了三角形运算放大器和三极管。 公开了三角形读出放大器。 公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。 公开了一种可编程可变驱动晶体管。 公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

公开(公告)号：US5889329A

公开(公告)日：1999-03-30

申请号：US517339

申请日：1995-08-21

申请人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriv B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

发明人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriv B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

IPC分类号： G06F17/50 ,  G11C5/02 ,  G11C5/06 ,  H01L23/522 ,  H01L23/528 ,  H01L27/02 ,  H01L27/092 ,  H01L27/108 ,  H01L27/11 ,  H01L27/118 ,  H01L29/06 ,  H03K19/0944 ,  H03K19/0948 ,  H01L23/535

CPC分类号： G06F17/5072 ,  G06F17/5077 ,  G11C5/025 ,  G11C5/063 ,  H01L23/5222 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/0922 ,  H01L27/108 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/11807 ,  H03K19/09441 ,  H03K19/0948 ,  H01L29/0657 ,  H01L2924/0002

摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arraingement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.

摘要翻译： 披露了几个发明。 公开了一种使用六角形电池的电池结构。 该体系结构不限于六角形细胞。 单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。 公开了多向非正交三层金属布线。 该架构可以与三向路由组合以用于特别有利的设计。 在三向布线布置中，集成电路的微电子单元的互连端的电导体优选地在三个方向上相互延伸60°。 沿三个方向延伸的导体优选地以三个不同的层形成。 公开了一种使半导体器件中的导线长度最小化的方法。 公开了一种使半导体器件中的金属间电容最小化的方法。 公开了一种称为“三元器件”的新型器件。 公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。 公开了三角形运算放大器和三极管。 公开了三角形读出放大器。 公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。 公开了一种可编程可变驱动晶体管。 公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

公开(公告)号：US5864165A

公开(公告)日：1999-01-26

申请号：US517451

申请日：1995-08-21

申请人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriy B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

发明人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriy B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

IPC分类号： G06F17/50 ,  G11C5/02 ,  G11C5/06 ,  H01L23/522 ,  H01L23/528 ,  H01L27/02 ,  H01L27/092 ,  H01L27/108 ,  H01L27/11 ,  H01L27/118 ,  H01L29/06 ,  H03K19/0944 ,  H03K19/0948 ,  H01L29/772

CPC分类号： G06F17/5072 ,  G06F17/5077 ,  G11C5/025 ,  G11C5/063 ,  H01L23/5222 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/0922 ,  H01L27/108 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/11807 ,  H03K19/09441 ,  H03K19/0948 ,  H01L29/0657 ,  H01L2924/0002

摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arrangement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.

摘要翻译： 披露了几个发明。 公开了一种使用六角形电池的电池结构。 该体系结构不限于六角形细胞。 单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。 公开了多向非正交三层金属布线。 该架构可以与三向路由组合以用于特别有利的设计。 在三向布线布置中，用于互连集成电路的微电子单元的端子的电导体优选地在彼此成角度地移位60度的三个方向上延伸。 沿三个方向延伸的导体优选地以三个不同的层形成。 公开了一种使半导体器件中的导线长度最小化的方法。 公开了一种使半导体器件中的金属间电容最小化的方法。 公开了一种称为“三元器件”的新型器件。 公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。 公开了三角形运算放大器和三极管。 公开了三角形读出放大器。 公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。 公开了一种可编程可变驱动晶体管。 公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

公开(公告)号：US5973376A

公开(公告)日：1999-10-26

申请号：US517406

申请日：1995-08-21

申请人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriy B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

发明人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriy B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

IPC分类号： G06F17/50 ,  G11C5/02 ,  G11C5/06 ,  H01L23/522 ,  H01L23/528 ,  H01L27/02 ,  H01L27/092 ,  H01L27/108 ,  H01L27/11 ,  H01L27/118 ,  H01L29/06 ,  H03K19/0944 ,  H03K19/0948 ,  H01L31/352 ,  H01L23/52 ,  H01L29/78

CPC分类号： G06F17/5072 ,  G06F17/5077 ,  G11C5/025 ,  G11C5/063 ,  H01L23/5222 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/0922 ,  H01L27/108 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/11807 ,  H03K19/09441 ,  H03K19/0948 ,  H01L29/0657 ,  H01L2924/0002

摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arraingement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.

摘要翻译： 披露了几个发明。 公开了一种使用六角形电池的电池结构。 该体系结构不限于六角形细胞。 单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。 公开了多向非正交三层金属布线。 该架构可以与三向路由组合以用于特别有利的设计。 在三向布线布置中，集成电路的微电子单元的互连端的电导体优选地在三个方向上相互延伸60°。 沿三个方向延伸的导体优选地以三个不同的层形成。 公开了一种使半导体器件中的导线长度最小化的方法。 公开了一种使半导体器件中的金属间电容最小化的方法。 公开了一种称为“三元器件”的新型器件。 公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。 公开了三角形运算放大器和三极管。 公开了三角形读出放大器。 公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。 公开了一种可编程可变驱动晶体管。 公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

公开(公告)号：US5822214A

公开(公告)日：1998-10-13

申请号：US517171

申请日：1995-08-21

申请人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriv B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

发明人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriv B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

IPC分类号： G06F17/50 ,  G11C5/02 ,  G11C5/06 ,  H01L23/522 ,  H01L23/528 ,  H01L27/02 ,  H01L27/092 ,  H01L27/108 ,  H01L27/11 ,  H01L27/118 ,  H01L29/06 ,  H03K19/0944 ,  H03K19/0948 ,  G06F15/60

CPC分类号： G06F17/5072 ,  G06F17/5077 ,  G11C5/025 ,  G11C5/063 ,  H01L23/5222 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/0922 ,  H01L27/108 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/11807 ,  H03K19/09441 ,  H03K19/0948 ,  H01L29/0657 ,  H01L2924/0002

摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arrangement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.

摘要翻译： 披露了几个发明。 公开了一种使用六角形电池的电池结构。 该体系结构不限于六角形细胞。 单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。 公开了多向非正交三层金属布线。 该架构可以与三向路由组合以用于特别有利的设计。 在三向布线布置中，用于互连集成电路的微电子单元的端子的电导体优选地在三个方向上彼此成角度地移位60度。 沿三个方向延伸的导体优选地形成为三个不同的层。 公开了一种使半导体器件中的导线长度最小化的方法。 公开了一种使半导体器件中的金属间电容最小化的方法。 公开了一种称为“三元器件”的新型器件。 公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。 公开了三角形运算放大器和三极管。 公开了三角形读出放大器。 公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。 公开了一种可编程可变驱动晶体管。 公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

公开(公告)号：US5801422A

公开(公告)日：1998-09-01

申请号：US517266

申请日：1995-08-21

申请人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriy B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

发明人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriy B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

IPC分类号： G06F17/50 ,  G11C5/02 ,  G11C5/06 ,  H01L23/522 ,  H01L23/528 ,  H01L27/02 ,  H01L27/092 ,  H01L27/108 ,  H01L27/11 ,  H01L27/118 ,  H01L29/06 ,  H03K19/0944 ,  H03K19/0948 ,  H01L29/78

CPC分类号： G06F17/5072 ,  G06F17/5077 ,  G11C5/025 ,  G11C5/063 ,  H01L23/5222 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/0922 ,  H01L27/108 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/11807 ,  H03K19/09441 ,  H03K19/0948 ,  H01L29/0657 ,  H01L2924/0002

摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arraingement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.

摘要翻译： 披露了几个发明。 公开了一种使用六角形电池的电池结构。 该体系结构不限于六角形细胞。 单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。 公开了多向非正交三层金属布线。 该架构可以与三向路由组合以用于特别有利的设计。 在三向布线布置中，集成电路的微电子单元的互连端的电导体优选地在三个方向上相互延伸60°。 沿三个方向延伸的导体优选地以三个不同的层形成。 公开了一种使半导体器件中的导线长度最小化的方法。 公开了一种使半导体器件中的金属间电容最小化的方法。 公开了一种称为“三元器件”的新型器件。 公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。 公开了三角形运算放大器和三极管。 公开了三角形读出放大器。 公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。 公开了一种可编程可变驱动晶体管。 公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

公开(公告)号：US5631581A

公开(公告)日：1997-05-20

申请号：US567952

申请日：1995-12-06

申请人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriy B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

发明人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriy B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

IPC分类号： H01L27/02 ,  H01L27/118 ,  H03K19/08 ,  H03K17/093

CPC分类号： H01L27/11803 ,  H01L27/0207 ,  H03K19/08

摘要： A microelectronic integrated circuit includes a semiconductor substrate, and a plurality of microelectronic devices formed on the substrate. Each device has a periphery defined by a triangle, and includes an active area formed within the periphery. First and second terminals are formed in the active area adjacent to two vertices of the triangle respectively, and first to third gates are formed between the first and second terminals. The gates have contacts formed outside the active area adjacent to a side of the triangle between the two vertices. The power supply connections to the first and second terminals, the conductivity type (NMOS or PMOS), and the addition of a pull-up or a pull-down resistor are selected for each device to provide a desired AND, NAND, OR or NOR function. A third terminal can be formed between two of the gates and used as an output terminal to provide an AND/OR logic function. The devices are interconnected using three direction routing based on hexagonal geometry.

摘要翻译： 微电子集成电路包括半导体衬底和形成在衬底上的多个微电子器件。 每个装置具有由三角形限定的周边，并且包括形成在周边内的有效区域。 第一和第二端子分别形成在与三角形的两个顶点相邻的有源区域中，并且在第一和第二端子之间形成第一至第三栅极。 门形成在与两个顶点之间的三角形的一侧相邻的有源区域的外侧。 为每个器件选择与第一和第二端子的电源连接，导电类型（NMOS或PMOS）以及上拉或下拉电阻的添加，以提供所需的AND，NAND，或或NOR 功能。 可以在两个栅极之间形成第三端子，并且用作输出端子以提供与/或逻辑功能。 这些设备使用基于六边形几何的三向路由进行互连。

公开(公告)号：US06312980B1

公开(公告)日：2001-11-06

申请号：US09092827

申请日：1998-06-05

申请人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriv B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

发明人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriv B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

IPC分类号： H01L2182

CPC分类号： H01L27/108 ,  G06F17/5072 ,  G06F17/5077 ,  G11C5/025 ,  G11C5/063 ,  H01L23/528 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/11807 ,  H01L29/0657 ,  H01L2924/0002 ,  Y10S438/965 ,  H01L2924/00

摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arraingement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60°. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a “tri-ister” is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.

摘要翻译： 披露了几个发明。 公开了一种使用六角形电池的电池结构。 该体系结构不限于六角形细胞。 单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。 公开了多向非正交三层金属布线。 该架构可以与三向路由组合以用于特别有利的设计。 在三向布线布线中，用于集成电路的微电子单元的互连端子的电导体优选地在彼此成角度地移位60°的三个方向上延伸。 沿三个方向延伸的导体优选地以三个不同的层形成。 公开了一种使半导体器件中的导线长度最小化的方法。 公开了一种使半导体器件中的金属间电容最小化的方法。 公开了一种称为“三元器件”的新型器件。 公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。 公开了三角形运算放大器和三极管。 公开了三角形读出放大器。 公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。 公开了一种可编程可变驱动晶体管。 公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

公开(公告)号：US5654563A

公开(公告)日：1997-08-05

申请号：US567894

申请日：1995-12-06

申请人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriy B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

发明人： Michael D. Rostoker ,  James S. Koford ,  Ranko Scepanovic ,  Edwin R. Jones ,  Gobi R. Padmanahben ,  Ashok K. Kapoor ,  Valeriy B. Kudryavtsev ,  Alexander E. Andreev ,  Stanislav V. Aleshin ,  Alexander S. Podkolzin

IPC分类号： H01L23/528 ,  H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L25/00 ,  H01L29/772

CPC分类号： H01L29/0692 ,  H01L23/528 ,  H01L27/088 ,  H01L29/7831 ,  H01L2924/0002

摘要： A microelectronic integrated circuit includes a semiconductor substrate, and a plurality of microelectronic devices formed on the substrate. Each device has a periphery defined by a triangle, and includes an active area formed within the periphery, a central terminal formed in a central portion of the active area, and interconnected first to third terminals formed in the active area adjacent to vertices of the triangle respectively. First to third gates are formed between the first to third terminals respectively and the central terminal, and have contacts formed outside the active area adjacent to the sides of the triangle. The power supply connections to the central terminal and the first to third terminals, the conductivity type (NMOS or PMOS), and the addition of a pull-up or a pull-down resistor is selected for each device to provide a desired OR, NOR, AND or NAND function. One or two of the first to third terminals, rather than the central terminal, can be used for output to provide an AND/OR logic function. The devices are interconnected using three direction routing based on hexagonal geometry.

摘要翻译： 微电子集成电路包括半导体衬底和形成在衬底上的多个微电子器件。 每个装置具有由三角形限定的周边，并且包括形成在周边内的有效区域，形成在有源区域的中心部分中的中心端子，以及形成在与三角形顶点相邻的有源区域中的互连的第一至第三端子 分别。 第一至第三栅极分别形成在第一至第三端子和中心端子之间，并且具有形成在与三角形的侧面相邻的有源区域外部的触点。 为每个器件选择与中心端子和第一至第三端子的电源连接，导电类型（NMOS或PMOS）以及上拉或下拉电阻的添加，以提供所需的OR，NOR ，AND或NAND功能。 第一至第三终端中的一个或两个，而不是中心终端，可用于输出以提供与/或逻辑功能。 这些设备使用基于六边形几何的三向路由进行互连。